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1. 发明授权

US07172916B2 Method and apparatus for vacuum-mounting a micro electro mechanical system on a substrate 失效
标题翻译：将微机电系统真空安装在基板上的方法和装置
公开(公告)号：US07172916B2
公开(公告)日：2007-02-06
申请号：US10701552
申请日：2003-11-06
申请人： Kyu-dong Jung , Chan-Bong Jun , Hyung Choi , Seok-jin Kang , Seog-woo Hong , Seok-whan Chung , Moon-chul Lee , Eun-sung Lee
发明人： Kyu-dong Jung , Chan-Bong Jun , Hyung Choi , Seok-jin Kang , Seog-woo Hong , Seok-whan Chung , Moon-chul Lee , Eun-sung Lee
IPC分类号： H01L21/00
CPC分类号： B81C1/00285
摘要： A method and apparatus for vacuum-mounting at least one micro electro mechanical system (MEMS) on a substrate includes a gas injecting section for injecting an inert gas into a vacuum chamber; a substrate aligning section for aligning a semiconductor substrate and a cover, the cover having a cavity formed therein and a getter attached to an interior surface of the cavity; a bonding section for bonding the semiconductor substrate and the cover together; and a controlling section for controlling the substrate aligning section to align the semiconductor and the cover, for controlling the gas injecting section to inject the inert gas into the vacuum chamber, and for controlling the bonding section to bond the semiconductor substrate and the cover together after the inert gas is injected.
摘要翻译：用于真空安装至少一个微机电系统（MEMS）在基板上的方法和装置包括用于将惰性气体注入真空室的气体注入部分; 用于对准半导体衬底和盖的衬底对准部分，所述盖具有形成在其中的空腔和附着到腔的内表面的吸气剂; 用于将半导体衬底和盖结合在一起的接合部分; 以及控制部分，用于控制衬底对准部分以对准半导体和盖子，用于控制气体注入部分以将惰性气体注入真空室中，并且用于控制接合部分将半导体衬底和盖子结合在一起，之后注入惰性气体。

2. 发明申请

US20120133450A1 METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD 有权
标题翻译：使用相同方法制造的多阶段衬底蚀刻和TERAHERTZ振荡器的方法
公开(公告)号：US20120133450A1
公开(公告)日：2012-05-31
申请号：US13306146
申请日：2011-11-29
申请人： Chan Wook BAIK , Jong Seok KIM , Seong Chan JUN , Sun Il KIM , Jong Min KIM , Chan Bong JUN , Sang Hun LEE
发明人： Chan Wook BAIK , Jong Seok KIM , Seong Chan JUN , Sun Il KIM , Jong Min KIM , Chan Bong JUN , Sang Hun LEE
IPC分类号： H03B5/30 , H01L21/762
CPC分类号： H01P11/003 , Y10T428/24802
摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.
摘要翻译：提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上，与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层基板和第二基板。

3. 发明申请

US20080144173A1 MULTI-DISPLAY APPARATUS AND METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：多显示装置及其制造方法
公开(公告)号：US20080144173A1
公开(公告)日：2008-06-19
申请号：US11832921
申请日：2007-08-02
申请人： Ki-deok Bae , Jun-seong Kim , Euk-che Hwang , Chan-bong Jun
发明人： Ki-deok Bae , Jun-seong Kim , Euk-che Hwang , Chan-bong Jun
IPC分类号： G03B21/56
CPC分类号： G03B21/56
摘要： A multi-display apparatus includes a plurality of panels connected to each other and displaying an image, wherein the plurality of panels comprise a top emission type display apparatus and a bottom emission type display apparatus, and the top emission type display apparatus and the bottom emission type display apparatus are connected to each other such that the top emission type display apparatus and the bottom emission type display apparatus emit light in a same direction, and the top emission type display apparatus and the bottom emission type display apparatus are arranged with a step difference therebetween such that pixel boundaries of adjacent side boundary surfaces of the top emission type display apparatus and of the bottom emission type display apparatus overlap each other.
摘要翻译：多显示装置包括彼此连接并显示图像的多个面板，其中多个面板包括顶部发射型显示装置和底部发射型显示装置，并且顶部发射型显示装置和底部发射上述发光型显示装置和底部发光型显示装置以相同的方向发光，顶部发光型显示装置和底部发光型显示装置以阶差形式配置使得顶部发射型显示装置和底部发射型显示装置的相邻侧边界面的像素边界彼此重叠。

4. 发明申请

US20080111462A1 ORGANIC ELECTRO-LUMINESCENT DISPLAY AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：有机电致发光显示器及其制造方法
公开(公告)号：US20080111462A1
公开(公告)日：2008-05-15
申请号：US11780106
申请日：2007-07-19
申请人： Ki-deok BAE , Chan-bong JUN , Chang-seung LEE , Hong-shik SHIM
发明人： Ki-deok BAE , Chan-bong JUN , Chang-seung LEE , Hong-shik SHIM
IPC分类号： H01J1/62 , H01J9/02 , H01L51/54 , H01L51/56
CPC分类号： H01L27/3283
摘要： An organic electro-luminescent display (“OELD”) and a method of manufacturing the OELD include: a substrate; a plurality of anodes substantially parallel with one another in a first direction and disposed on the substrate; a plurality of cathodes disposed substantially parallel with one another in a second direction orthogonal to the first direction; organic electro-luminescent parts disposed at intersections between the anodes and the cathodes; a plurality of cathode separators each disposed between the cathodes; and gaps separating lower edges of the cathode separators facing the cathodes from the substrate.
摘要翻译：有机电致发光显示器（“OELD”）和制造OELD的方法包括：基板; 多个阳极，在第一方向上彼此基本平行并且设置在所述基板上; 在与第一方向正交的第二方向上彼此大致平行地设置的多个阴极; 设置在阳极和阴极之间的交叉处的有机电致发光部件; 多个阴极分离器，各自设置在阴极之间; 以及将阴极隔板的面向阴极的下边缘与基板分开的间隙。

5. 发明授权

US07084073B2 Method of forming a via hole through a glass wafer 有权
标题翻译：通过玻璃晶片形成通孔的方法
公开(公告)号：US07084073B2
公开(公告)日：2006-08-01
申请号：US10681217
申请日：2003-10-09
申请人： Moon-chul Lee , Hyung Choi , Kyu-dong Jung , Mi Jang , Seog-woo Hong , Seok-whan Chung , Chan-bong Jun , Seok-jin Kang
发明人： Moon-chul Lee , Hyung Choi , Kyu-dong Jung , Mi Jang , Seog-woo Hong , Seok-whan Chung , Chan-bong Jun , Seok-jin Kang
IPC分类号： H01L21/302
CPC分类号： B81C1/00087 , H01L21/486 , H01L23/13 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a via hole through a glass wafer includes depositing a material layer on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the glass wafer, forming a via-patterned portion on one side of the material layer, performing a first etching in which the via-patterned portion is etched to form a preliminary via hole, eliminating any remaining patterning material used in the formation of the via-patterned portion, performing a second etching in which the preliminary via hole is etched to form a via hole having a smooth surface and extending through the glass wafer, and eliminating the material layer. The method according to the present invention is able to form a via hole through a glass wafer without allowing formation of an undercut or minute cracks, thereby increasing the yield and reliability of MEMS elements.
摘要翻译：通过玻璃晶片形成通孔的方法包括在玻璃晶片的外表面上沉积材料层，该材料层的选择比率高于玻璃晶片的选择比，在玻璃晶片的一侧上形成通孔图案部分所述材料层进行蚀刻所述通路图案部分以形成预备通孔的第一蚀刻，消除在形成所述通路图案部分中使用的剩余图案材料，进行第二蚀刻，其中所述预通孔被蚀刻以形成具有光滑表面并延伸穿过玻璃晶片的通孔，并且消除材料层。根据本发明的方法能够通过玻璃晶片形成通孔，而不会形成底切或微小的裂缝，从而提高MEMS元件的成品率和可靠性。

6. 发明申请

US20110156836A1 DUPLEXER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：双工器件及其制造方法
公开(公告)号：US20110156836A1
公开(公告)日：2011-06-30
申请号：US12843394
申请日：2010-07-26
申请人： Yeong Gyu LEE , Yong Deuk YE , Je Hong KYOUNG , Chan Bong JUN
发明人： Yeong Gyu LEE , Yong Deuk YE , Je Hong KYOUNG , Chan Bong JUN
IPC分类号： H03H9/72
CPC分类号： H03H9/0566
摘要： There is provided a duplexer device and a method of manufacturing the same. The duplexer device includes a substrate including a duplex circuit; first and second acoustic wave filter chips mounted on the substrate in a flip chip bonding manner and constituting an Rx (receiver) filter and a Tx (transmitter) filter, respectively; and a molding portion covering the first and second acoustic wave filter chips. The first and second acoustic wave filter chips are arranged by flip chip bonding, so there is no need for a separate protective structure so as to protect device functional portions of the chips. Accordingly, a compact product is realized and a manufacturing process is simplified.
摘要翻译：提供一种双工器件及其制造方法。双工器装置包括：包括双工电路的基板; 分别以倒装芯片接合方式安装在基板上的第一和第二声波滤波器芯片，分别构成Rx（接收机）滤波器和Tx（发射机）滤波器; 以及覆盖第一和第二声波滤波器芯片的模制部分。第一和第二声波滤波器芯片通过倒装芯片接合来布置，因此不需要单独的保护结构，以保护芯片的器件功能部分。因此，实现了紧凑的产品并简化了制造过程。

7. 发明申请

US20080094455A1 INKJET PRINTHEAD HEATER AND METHOD OF MANUFACTURE 审中-公开
标题翻译： INKJET PRINTHEAD加热器及其制造方法
公开(公告)号：US20080094455A1
公开(公告)日：2008-04-24
申请号：US11742756
申请日：2007-05-01
申请人： Jung-hyun LEE , Sang-jun Choi , Hyung-jin Bae , Chan-bong Jun
发明人： Jung-hyun LEE , Sang-jun Choi , Hyung-jin Bae , Chan-bong Jun
IPC分类号： B41J2/05 , G11B5/127
CPC分类号： B41J2/14129 , B41J2/1603 , B41J2/1642 , B41J2/1646 , B41J2202/03
摘要： An inkjet printhead heater including a plurality of unit heater layers each including a first nitride layer and a second nitride layer stacked on the first nitride layer, and an inkjet printhead including the heater, and a method of manufacturing an inkjet printhead heater including stacking a plurality of unit heater layers, each including a substrate having a first nitride layer and a second nitride layer stacked on the first nitride layer.
摘要翻译：一种喷墨打印头加热器，包括多个单元加热器层，每个单元加热器层包括堆叠在第一氮化物层上的第一氮化物层和第二氮化物层，以及包括该加热器的喷墨打印头，以及制造喷墨打印头加热器的方法，的每个单元加热器层，每个单元加热器层包括具有堆叠在第一氮化物层上的第一氮化物层和第二氮化物层的基板。

8. 发明授权

US07148141B2 Method for manufacturing metal structure having different heights 有权
标题翻译：具有不同高度的金属结构的制造方法
公开(公告)号：US07148141B2
公开(公告)日：2006-12-12
申请号：US11012312
申请日：2004-12-16
申请人： Dong-sik Shim , Chan-bong Jun , Hyung Choi , Hoon Song
发明人： Dong-sik Shim , Chan-bong Jun , Hyung Choi , Hoon Song
IPC分类号： H01L21/44
CPC分类号： H01L21/76885 , H01L21/2885 , H01L24/11 , H01L24/12 , H01L2224/0401 , H01L2224/0603 , H01L2224/13099 , H01L2224/1403 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01033 , H01L2924/01078 , H01L2924/181 , H01L2924/00
摘要： Disclosed is a method for forming a plurality of metal structures having different heights on a semiconductor substrate. The disclosed method for manufacturing a metal structure having different heights includes: forming a plurality of seed layers, to have heights corresponding to the metal structure to be formed, on a semiconductor substrate so that those layers can be electrically separated, performing a plating process using a plating mold, and applying different currents to the respective seed layers so that the plating thickness can be adjusted for each of the seed layers. Accordingly, a plurality of metal structures having different heights can be obtained by a plating mold forming process and a plating process that are performed just once, respectively.
摘要翻译：公开了一种在半导体衬底上形成具有不同高度的多个金属结构体的方法。所公开的制造具有不同高度的金属结构体的方法包括：在半导体衬底上形成多个种子层以具有与要形成的金属结构相对应的高度，使得这些层可以电分离，使用电镀模具，并且向相应的种子层施加不同的电流，使得可以针对每个种子层调整镀层厚度。因此，可以通过分别进行一次的电镀模具成型工序和电镀工序来获得具有不同高度的多个金属结构体。

9. 发明授权

US07119638B2 Film bulk acoustic resonator having an air gap and a method for manufacturing the same 有权
标题翻译：具有气隙的薄膜体声共振器及其制造方法
公开(公告)号：US07119638B2
公开(公告)日：2006-10-10
申请号：US10827348
申请日：2004-04-20
申请人： Chan-bong Jun , O-gweon Seo
发明人： Chan-bong Jun , O-gweon Seo
IPC分类号： H03H9/15 , H03H3/02
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/021 , Y10T29/42
摘要： A film bulk acoustic resonator (FBAR) includes a resistance layer deposited on the upper surface of a semiconductor substrate and having a recess therein, a membrane layer on the upper surfaces of the resistance layer and the recess, thereby forming an air gap between the membrane layer and the semiconductor substrate, and a resonator having a lower electrode, a piezoelectric layer, and an upper electrode deposited on the membrane layer. The resistance layer may include first and second resistance layers, the first resistance layer having the recess therein and the second resistance layer being deposited on the upper surfaces of the recess. Thus, the air gap is formed without etching the semiconductor substrate, enhancing the resonant characteristics of the FBAR. Active and/or passive devices can be formed underneath the air gap to be integrated with the FBAR.
摘要翻译：薄膜体声波谐振器（FBAR）包括沉积在半导体衬底的上表面上并具有凹部的电阻层，电阻层的上表面上的膜层和凹部，从而在膜之间形成气隙层和半导体衬底，以及具有沉积在膜层上的下电极，压电层和上电极的谐振器。电阻层可以包括第一和第二电阻层，第一电阻层具有凹部，第二电阻层沉积在凹部的上表面上。因此，在不蚀刻半导体衬底的情况下形成气隙，增强了FBAR的谐振特性。有源和/或无源器件可以形成在气隙下面以与FBAR集成。

10. 发明授权

US08514027B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08514027B2
公开(公告)日：2013-08-20
申请号：US13306146
申请日：2011-11-29
申请人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
发明人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
IPC分类号： H03B5/30 , B44C1/22
CPC分类号： H01P11/003 , Y10T428/24802
摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.
摘要翻译：提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上，与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层基板和第二基板。

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