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1. 发明授权

US08664014B2 High productivity combinatorial workflow for photoresist strip applications 失效
标题翻译：用于光刻胶剥离应用的高生产率组合工作流程
公开(公告)号：US08664014B2
公开(公告)日：2014-03-04
申请号：US13298524
申请日：2011-11-17
申请人： Bei Li , Sean Barstow , Anh Duong , Zhendong Hong , Ashley Lacey
发明人： Bei Li , Sean Barstow , Anh Duong , Zhendong Hong , Ashley Lacey
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L22/14 , G03F7/422 , H01L22/20
摘要： Electrical testing of metal oxide semiconductor (MOS) high-k capacitor structures is used to evaluate photoresist strip or cleaning chemicals using a combinatorial workflow. The electrical testing can be able to identify the damages on the high-k dielectrics, permitting a selection of photoresist strip chemicals to optimize the process conditions in the fabrication of semiconductor devices. The high productivity combinatorial technique can provide a compatibility evaluation of photoresist strip chemicals with high-k devices.
摘要翻译：金属氧化物半导体（MOS）高k电容器结构的电气测试用于使用组合工作流程来评估光致抗蚀剂条或清洁化学品。电气测试能够识别高k电介质上的损伤，允许选择光致抗蚀剂胶带化学品来优化半导体器件制造过程中的工艺条件。高生产率组合技术可以提供具有高k器件的光致抗蚀剂剥离化学品的兼容性评估。

2. 发明申请

US20130122671A1 PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS 有权
标题翻译：去除NiPtSi应用的Ni和Pt残留物的工艺
公开(公告)号：US20130122671A1
公开(公告)日：2013-05-16
申请号：US13296444
申请日：2011-11-15
申请人： Anh Duong , Sean Barstow , Clemens Fitz , John Foster , Olov Karlsson , Bei Li , James Mavrinac
发明人： Anh Duong , Sean Barstow , Clemens Fitz , John Foster , Olov Karlsson , Bei Li , James Mavrinac
IPC分类号： H01L21/336 , H01L21/28
CPC分类号： H01L21/02068 , H01L21/28052 , H01L21/28518 , H01L29/665
摘要： The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Embodiments of the invention provide a multi-step cleaning process, comprising exposing the substrate to a nitric acid solution after a first anneal, followed by an aqua regia solution after a second anneal. The substrate can be optionally exposed to a hydrochloric acid solution afterward to completely remove any remaining platinum residues.
摘要翻译：本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。本发明的实施方案提供了一种多步骤清洗方法，包括在第一次退火之后将基底暴露于硝酸溶液，然后在第二次退火之后暴露于王水溶液中。可以将底物任选地暴露于盐酸溶液中以完全除去任何剩余的铂残余物。

3. 发明授权

US08294219B2 Nonvolatile memory element including resistive switching metal oxide layers 有权
标题翻译：非易失性存储元件包括电阻式开关金属氧化物层
公开(公告)号：US08294219B2
公开(公告)日：2012-10-23
申请号：US12179538
申请日：2008-07-24
申请人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
发明人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
IPC分类号： H01L21/02
CPC分类号： H01L45/1608 , H01L27/2418 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641
摘要： Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.
摘要翻译：提供了基于电阻式开关存储元件层的非易失性存储元件。非易失性存储元件可以具有电阻性开关金属氧化物层。电阻式开关金属氧化物层可以具有一层或多层氧化物。电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。可以形成层以增强非易失性存储元件的热稳定性。用于非易失性存储元件的电极可以包含导电层和缓冲层。

4. 发明授权

US08877550B2 Methods for forming resistive switching memory elements by heating deposited layers 有权
标题翻译：通过加热沉积层形成电阻式开关存储元件的方法
公开(公告)号：US08877550B2
公开(公告)日：2014-11-04
申请号：US13371220
申请日：2012-02-10
申请人： Pragati Kumar , Sean Barstow , Sunil Shanker , Tony Chiang
发明人： Pragati Kumar , Sean Barstow , Sunil Shanker , Tony Chiang
IPC分类号： H01L45/00 , H01L27/04 , H01L27/24
CPC分类号： H01L45/1633 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing layer. Oxygen from the decomposing oxide layer may form a metal oxide with metal from the metal-containing layer. The resulting metal oxide may exhibit resistive switching for the resistive switching memory elements.
摘要翻译：提供电阻式开关非易失性存储元件。可以使用快速热退火技术来加热含金属层和用于存储元件的氧化物层。在加热期间，氧化物层可能分解并与含金属层反应。来自分解氧化物层的氧可以从含金属的层与金属形成金属氧化物。所得到的金属氧化物可以表现出用于电阻式开关存储元件的电阻式开关。

5. 发明授权

US08513117B2 Process to remove Ni and Pt residues for NiPtSi applications 有权
标题翻译：去除NiPtSi应用的Ni和Pt残留物的工艺
公开(公告)号：US08513117B2
公开(公告)日：2013-08-20
申请号：US13296444
申请日：2011-11-15
申请人： Anh Duong , Sean Barstow , Clemens Fitz , John Foster , Olov Karlsson , Bei Li , James Mavrinac
发明人： Anh Duong , Sean Barstow , Clemens Fitz , John Foster , Olov Karlsson , Bei Li , James Mavrinac
IPC分类号： H01L21/44
CPC分类号： H01L21/02068 , H01L21/28052 , H01L21/28518 , H01L29/665
摘要： The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Embodiments of the invention provide a multi-step cleaning process, comprising exposing the substrate to a nitric acid solution after a first anneal, followed by an aqua regia solution after a second anneal. The substrate can be optionally exposed to a hydrochloric acid solution afterward to completely remove any remaining platinum residues.
摘要翻译：本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。本发明的实施方案提供了一种多步骤清洗方法，包括在第一次退火之后将基底暴露于硝酸溶液，然后在第二次退火之后暴露于王水溶液中。可以将底物任选地暴露于盐酸溶液中以完全除去任何剩余的铂残余物。

6. 发明申请

US20130130414A1 HIGH PRODUCTIVITY COMBINATORIAL WORKFLOW FOR PHOTORESIST STRIP APPLICATIONS 失效
标题翻译：高效生产力组合工作流程用于光栅条纹应用
公开(公告)号：US20130130414A1
公开(公告)日：2013-05-23
申请号：US13298524
申请日：2011-11-17
申请人： Bei Li , Sean Barstow , Anh Duong , Zhendong Hong , Ashley Lacey
发明人： Bei Li , Sean Barstow , Anh Duong , Zhendong Hong , Ashley Lacey
IPC分类号： H01L21/66
CPC分类号： H01L22/14 , G03F7/422 , H01L22/20
摘要： Electrical testing of metal oxide semiconductor (MOS) high-k capacitor structures is used to evaluate photoresist strip or cleaning chemicals using a combinatorial workflow. The electrical testing can be able to identify the damages on the high-k dielectrics, permitting a selection of photoresist strip chemicals to optimize the process conditions in the fabrication of semiconductor devices. The high productivity combinatorial technique can provide a compatibility evaluation of photoresist strip chemicals with high-k devices.
摘要翻译：金属氧化物半导体（MOS）高k电容器结构的电气测试用于使用组合工作流程来评估光致抗蚀剂条或清洁化学品。电气测试能够识别高k电介质上的损伤，允许选择光致抗蚀剂胶带化学品来优化半导体器件制造过程中的工艺条件。高生产率组合技术可以提供具有高k器件的光致抗蚀剂剥离化学品的兼容性评估。

7. 发明申请

US20130098393A1 Method for Cleaning Platinum Residues on a Semiconductor Substrate 失效
标题翻译：用于清洁半导体衬底上的铂残留物的方法
公开(公告)号：US20130098393A1
公开(公告)日：2013-04-25
申请号：US13276973
申请日：2011-10-19
申请人： Anh Duong , Sean Barstow , Olov Karlsson , Bei Li , James Mavrinac
发明人： Anh Duong , Sean Barstow , Olov Karlsson , Bei Li , James Mavrinac
IPC分类号： B08B3/08 , H01L21/02
CPC分类号： H01L21/02052 , H01L21/02068 , H01L21/28518 , H01L29/665
摘要： A method for cleaning platinum residues from a surface of a substrate is provided. The method initiates with exposing the surface to a first solution containing a mixture of nitric acid and hydrochloric acid. Then, the surface is exposed to a second solution containing hydrochloric acid.
摘要翻译：提供了从基板的表面清除铂残留物的方法。该方法首先将表面暴露于含有硝酸和盐酸混合物的第一溶液。然后，将表面暴露于含有盐酸的第二溶液。

8. 发明授权

US08318573B2 Nonvolatile memory elements 有权
标题翻译：非易失性存储元件
公开(公告)号：US08318573B2
公开(公告)日：2012-11-27
申请号：US13337611
申请日：2011-12-27
申请人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
发明人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
IPC分类号： H01L21/02
CPC分类号： H01L45/1608 , H01L27/2418 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641
摘要： Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.
摘要翻译：提供了基于电阻式开关存储元件层的非易失性存储元件。非易失性存储元件可以具有电阻性开关金属氧化物层。电阻式开关金属氧化物层可以具有一层或多层氧化物。电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。可以形成层以增强非易失性存储元件的热稳定性。用于非易失性存储元件的电极可以包含导电层和缓冲层。

9. 发明申请

US20120149164A1 METHODS FOR FORMING RESISTIVE-SWITCHING METAL OXIDES FOR NONVOLATILE MEMORY ELEMENTS 有权
标题翻译：形成非易失性存储元件的电阻式切换金属氧化物的方法
公开(公告)号：US20120149164A1
公开(公告)日：2012-06-14
申请号：US13111230
申请日：2011-05-19
申请人： Pragati Kumar , Sandra G. Malhotra , Sean Barstow , Tony Chiang
发明人： Pragati Kumar , Sandra G. Malhotra , Sean Barstow , Tony Chiang
IPC分类号： H01L21/02
CPC分类号： H01L45/1625 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed from resistive-switching metal oxide layers. Metal oxide layers may be formed using sputter deposition at relatively low sputtering powers, relatively low duty cycles, and relatively high sputtering gas pressures. Dopants may be incorporated into a base oxide layer at an atomic concentration that is less than the solubility limit of the dopant in the base oxide. At least one oxidation state of the metal in the base oxide is preferably different than at least one oxidation sate of the dopant. The ionic radius of the dopant and the ionic radius of the metal may be selected to be close to each other. Annealing and oxidation operations may be performed on the resistive switching metal oxides. Bistable metal oxides with relatively large resistivities and large high-state-to-low state resistivity ratios may be produced.
摘要翻译：提供具有电阻开关金属氧化物的非易失性存储元件。非易失性存储元件可以由电阻式开关金属氧化物层形成。金属氧化物层可以使用相对低的溅射功率，相对低的占空比和较高的溅射气体压力的溅射沉积形成。掺杂剂可以以小于基底氧化物中的掺杂剂的溶解度极限的原子浓度结合到基底氧化物层中。基底氧化物中金属的至少一种氧化态优选不同于掺杂剂的至少一种氧化态。可以选择掺杂剂的离子半径和金属的离子半径彼此接近。可以对电阻式开关金属氧化物进行退火和氧化操作。可以制造具有相对较大的电阻率和大的高 - 低 - 电阻率比的双稳态金属氧化物。

10. 发明申请

US20120142143A1 Methods for Forming Resistive Switching Memory Elements by Heating Deposited Layers 有权
标题翻译：通过加热沉积层形成电阻式开关存储元件的方法
公开(公告)号：US20120142143A1
公开(公告)日：2012-06-07
申请号：US13371220
申请日：2012-02-10
申请人： Pragati Kumar , Sean Barstow , Sunil Shanker , Tony Chiang
发明人： Pragati Kumar , Sean Barstow , Sunil Shanker , Tony Chiang
IPC分类号： H01L47/00
CPC分类号： H01L45/1633 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing layer. Oxygen from the decomposing oxide layer may form a metal oxide with metal from the metal-containing layer. The resulting metal oxide may exhibit resistive switching for the resistive switching memory elements.
摘要翻译：提供电阻式开关非易失性存储元件。可以使用快速热退火技术来加热含金属层和用于存储元件的氧化物层。在加热期间，氧化物层可能分解并与含金属层反应。来自分解氧化物层的氧可以从含金属的层与金属形成金属氧化物。所得到的金属氧化物可以表现出用于电阻式开关存储元件的电阻式开关。

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