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1. 发明授权

US08558195B2 Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process 有权
标题翻译：使用改进的伪同时多离子注入工艺制造的半导体结构
公开(公告)号：US08558195B2
公开(公告)日：2013-10-15
申请号：US12950416
申请日：2010-11-19
申请人： Sarko Cherekdjian
发明人： Sarko Cherekdjian
IPC分类号： A61N5/00
CPC分类号： H01J37/3007 , H01J37/3171 , H01J2237/0825 , H01J2237/20 , H01L21/76254
摘要： Methods and apparatus provide for: a source simultaneously producing first plasma, which includes a first species of ions, and second plasma, which includes a second, differing, species of ions; an accelerator system including an analyzer magnet, which cooperate to simultaneously: (i) accelerate the first and second plasma along an initial axis, (ii) alter a trajectory of the first species of ions from the first plasma, thereby producing at least one first ion beam along a first axis, which is transverse to the initial axis, and (iii) alter a trajectory of the second species of ions from the second plasma, thereby producing at least one second ion beam along a second axis, which is transverse to the initial axis and the first axis; and a beam processing system operating to simultaneously direct the first and second ion beams toward a semiconductor wafer such that the first and second species of ions bombard an implantation surface of the semiconductor wafer to create an exfoliation layer therein.
摘要翻译：方法和装置提供：源同时产生包括第一种离子的第一等离子体，以及第二等离子体，其包括第二种不同的离子种类; 包括分析器磁体的加速器系统，其同时协作：（i）沿着初始轴加速第一和第二等离子体，（ii）改变来自第一等离子体的第一种离子的轨迹，由此产生至少一个第一沿着与初始轴线横向的第一轴线的离子束，以及（iii）改变来自第二等离子体的第二种离子的轨迹，从而沿着第二轴线产生至少一个第二离子束，该第二离子束横向于初始轴和第一轴; 以及光束处理系统，其操作以同时将第一和第二离子束朝向半导体晶片引导，使得第一和第二种离子轰击半导体晶片的注入表面以在其中产生剥离层。

2. 发明授权

US07816225B2 Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation 有权
标题翻译：使用定向剥离制造绝缘体上半导体结构的方法和装置
公开(公告)号：US07816225B2
公开(公告)日：2010-10-19
申请号：US12290362
申请日：2008-10-30
申请人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
发明人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
IPC分类号： H01L21/00
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X-and Y-axial directions.
摘要翻译：方法和装置提供用于形成绝缘体上半导体（SOI）结构，包括使施主半导体晶片的注入表面进行离子注入步骤，以在限定施主半导体晶片的剥离层的横截面中产生弱化片 ; 以及在所述离子注入步骤之前，期间或之后对所述施主半导体晶片进行空间变化步骤，使得所述弱化切片的至少一个参数在所述弱化切片中在X轴和Y轴中的至少一个中在空间上变化方向。

3. 发明授权

US08652952B2 Semiconductor structure made using improved multiple ion implantation process 失效
标题翻译：使用改进的多离子注入工艺制造的半导体结构
公开(公告)号：US08652952B2
公开(公告)日：2014-02-18
申请号：US13471932
申请日：2012-05-15
申请人： Sarko Cherekdjian
发明人： Sarko Cherekdjian
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01J37/32366 , C23C14/48 , C23C14/54 , C23C14/56 , H01J37/08 , H01J37/317 , H01J37/3171 , H01J37/32412 , H01J2237/024 , H01J2237/0827 , H01J2237/31701 , H01L21/2236 , H01L21/76254
摘要： Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.
摘要翻译：方法和装置提供：第一等离子体源，其中所述等离子体包括第一种离子; 第二等离子体源，其中所述等离子体包括第二种离子; 从第一和第二来源选择等离子体; 并且将第一种离子或第二种离子加速到半导体晶片。

4. 发明申请

US20120129324A1 SEMICONDUCTOR STRUCTURE MADE USING IMPROVED MULTIPLE ION IMPLANTATION PROCESS 有权
标题翻译：使用改进的多个离子植入工艺制备半导体结构
公开(公告)号：US20120129324A1
公开(公告)日：2012-05-24
申请号：US12950376
申请日：2010-11-19
申请人： Sarko Cherekdjian
发明人： Sarko Cherekdjian
IPC分类号： H01L21/26 , C23C16/448
CPC分类号： H01J37/32366 , C23C14/48 , C23C14/54 , C23C14/56 , H01J37/08 , H01J37/317 , H01J37/3171 , H01J37/32412 , H01J2237/024 , H01J2237/0827 , H01J2237/31701 , H01L21/2236 , H01L21/76254
摘要： Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.
摘要翻译：方法和装置提供：第一等离子体源，其中所述等离子体包括第一种离子; 第二等离子体源，其中所述等离子体包括第二种离子; 从第一和第二来源选择等离子体; 并且将第一种离子或第二种离子加速到半导体晶片。

5. 发明申请

US20110207306A1 SEMICONDUCTOR STRUCTURE MADE USING IMPROVED ION IMPLANTATION PROCESS 审中-公开
标题翻译：使用改进的离子植入工艺制备半导体结构
公开(公告)号：US20110207306A1
公开(公告)日：2011-08-25
申请号：US12709833
申请日：2010-02-22
申请人： Sarko Cherekdjian , Yuko Fujimoto , Richard Orr Maschmeyer , Takeshi Matsumoto
发明人： Sarko Cherekdjian , Yuko Fujimoto , Richard Orr Maschmeyer , Takeshi Matsumoto
IPC分类号： H01L21/265
CPC分类号： H01L21/76254
摘要： Methods and apparatus for producing a semiconductor structure include: subjecting an implantation surface of a semiconductor wafer to an ion implantation process to create an exfoliation layer therein, wherein the ion implantation process includes simultaneously implanting two different species of ions into the implantation surface of the semiconductor wafer.
摘要翻译：用于制造半导体结构的方法和装置包括：使半导体晶片的注入表面进行离子注入工艺以在其中产生剥离层，其中离子注入工艺包括同时将两种不同种类的离子注入到半导体的注入表面中晶圆。

6. 发明授权

US08196546B1 Semiconductor structure made using improved multiple ion implantation process 有权
标题翻译：使用改进的多离子注入工艺制造的半导体结构
公开(公告)号：US08196546B1
公开(公告)日：2012-06-12
申请号：US12950376
申请日：2010-11-19
申请人： Sarko Cherekdjian
发明人： Sarko Cherekdjian
IPC分类号： H01L21/00
CPC分类号： H01J37/32366 , C23C14/48 , C23C14/54 , C23C14/56 , H01J37/08 , H01J37/317 , H01J37/3171 , H01J37/32412 , H01J2237/024 , H01J2237/0827 , H01J2237/31701 , H01L21/2236 , H01L21/76254
摘要： Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.
摘要翻译：方法和装置提供：第一等离子体源，其中所述等离子体包括第一种离子; 第二等离子体源，其中所述等离子体包括第二种离子; 从第一和第二来源选择等离子体; 并且将第一种离子或第二种离子加速到半导体晶片。

7. 发明申请

US20120126147A1 SEMICONDUCTOR STRUCTURE MADE USING IMPROVED PSEUDO-SIMULTANEOUS MULTIPLE ION IMPLANTATION PROCESS 有权
标题翻译：使用改进的PSEUDO同时多次离子植入过程的半导体结构
公开(公告)号：US20120126147A1
公开(公告)日：2012-05-24
申请号：US12950416
申请日：2010-11-19
申请人： Sarko Cherekdjian
发明人： Sarko Cherekdjian
IPC分类号： G21K5/10
CPC分类号： H01J37/3007 , H01J37/3171 , H01J2237/0825 , H01J2237/20 , H01L21/76254
摘要： Methods and apparatus provide for: a source simultaneously producing first plasma, which includes a first species of ions, and second plasma, which includes a second, differing, species of ions; an accelerator system including an analyzer magnet, which cooperate to simultaneously: (i) accelerate the first and second plasma along an initial axis, (ii) alter a trajectory of the first species of ions from the first plasma, thereby producing at least one first ion beam along a first axis, which is transverse to the initial axis, and (iii) alter a trajectory of the second species of ions from the second plasma, thereby producing at least one second ion beam along a second axis, which is transverse to the initial axis and the first axis; and a beam processing system operating to simultaneously direct the first and second ion beams toward a semiconductor wafer such that the first and second species of ions bombard an implantation surface of the semiconductor wafer to create an exfoliation layer therein.
摘要翻译：方法和装置提供：源同时产生包括第一种离子的第一等离子体，以及第二等离子体，其包括第二种不同的离子种类; 包括分析器磁体的加速器系统，其同时协作：（i）沿着初始轴加速第一和第二等离子体，（ii）改变来自第一等离子体的第一种离子的轨迹，由此产生至少一个第一沿着与初始轴线横向的第一轴线的离子束，以及（iii）改变来自第二等离子体的第二种离子的轨迹，从而沿着第二轴线产生至少一个第二离子束，该第二离子束横向于初始轴和第一轴; 以及光束处理系统，其操作以同时将第一和第二离子束朝向半导体晶片引导，使得第一和第二种离子轰击半导体晶片的注入表面以在其中产生剥离层。

8. 发明申请

US20120028443A1 METHODS AND APPARATUS FOR PRODUCING SEMICONDUCTOR ON INSULATOR STRUCTURES USING DIRECTED EXFOLIATION 失效
标题翻译：使用方向分解生产绝缘体结构的半导体的方法和装置
公开(公告)号：US20120028443A1
公开(公告)日：2012-02-02
申请号：US13253451
申请日：2011-10-05
申请人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
发明人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
IPC分类号： H01L21/78
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.
摘要翻译：方法和装置提供用于形成绝缘体上半导体（SOI）结构，包括使施主半导体晶片的注入表面进行离子注入步骤，以在限定施主半导体晶片的剥离层的横截面中产生弱化片 ; 以及在所述离子注入步骤之前，期间或之后对所述施主半导体晶片进行空间变化步骤，使得所述弱化切片的至少一个参数在X轴和Y轴中的至少一个中在所述弱化切片之间空间上变化方向。

9. 发明授权

US08058148B2 Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation 有权
公开(公告)号：US08058148B2
公开(公告)日：2011-11-15
申请号：US12779606
申请日：2010-05-13
申请人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
发明人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.

10. 发明申请

US20120231616A1 SEMICONDUCTOR STRUCTURE MADE USING IMPROVED MULTIPLE ION IMPLANTATION PROCESS 失效
公开(公告)号：US20120231616A1
公开(公告)日：2012-09-13
申请号：US13471932
申请日：2012-05-15
申请人： Sarko Cherekdjian
发明人： Sarko Cherekdjian
IPC分类号： H01L21/265
CPC分类号： H01J37/32366 , C23C14/48 , C23C14/54 , C23C14/56 , H01J37/08 , H01J37/317 , H01J37/3171 , H01J37/32412 , H01J2237/024 , H01J2237/0827 , H01J2237/31701 , H01L21/2236 , H01L21/76254
摘要： Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.

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