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1. 发明授权

US07936003B2 Semiconductor device having transistor with vertical gate electrode and method of fabricating the same 失效
标题翻译：具有具有垂直栅电极的晶体管的半导体器件及其制造方法
公开(公告)号：US07936003B2
公开(公告)日：2011-05-03
申请号：US11344560
申请日：2006-01-31
申请人： Sang-Woo Kang , Jeong-Uk Han , Yong-Tae Kim , Seung-Beom Yoon
发明人： Sang-Woo Kang , Jeong-Uk Han , Yong-Tae Kim , Seung-Beom Yoon
IPC分类号： H01L29/788
CPC分类号： H01L29/785 , H01L27/105 , H01L27/115 , H01L27/228 , H01L27/2436 , H01L29/7881 , H01L29/792
摘要： A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern.
摘要翻译：半导体器件包括具有垂直栅电极的晶体管。在晶体管结构中，半导体图案具有面向横向的第一和第二侧以及纵向方向上的第三和第四侧。栅极图案被布置成与半导体图案的第一和第二侧相邻。杂质图案直接接触半导体图案的第三面和第四面。栅极绝缘图案插入在栅极图案和半导体图案之间。

2. 发明授权

US07723188B2 Non-volatile memory devices and methods of forming the same 失效
标题翻译：非易失性存储器件及其形成方法
公开(公告)号：US07723188B2
公开(公告)日：2010-05-25
申请号：US12274166
申请日：2008-11-19
申请人： Seong-Gyun Kim , Ji-Hoon Park , Sang-Woo Kang , Sung-Woo Park
发明人： Seong-Gyun Kim , Ji-Hoon Park , Sang-Woo Kang , Sung-Woo Park
IPC分类号： H01L21/336
CPC分类号： H01L21/28273 , H01L27/11524 , H01L29/42324 , H01L29/66825 , H01L29/7881
摘要： A non-volatile memory device includes an upwardly protruding fin disposed on a substrate and a control gate electrode crossing the fin. A floating gate is interposed between the control gate electrode and the fin and includes a first storage gate and a second storage gate. The first storage gate is disposed on a sidewall of the fin, and the second storage gate is disposed on a top surface of the fin and is connected to the first storage gate. A first insulation layer is interposed between the first storage gate and the sidewall of the fin, and a second insulation layer is interposed between the second storage gate and the top surface of the fin. The second insulation layer is thinner than the first insulation layer. A blocking insulation pattern is interposed between the control gate electrode and the floating gate.
摘要翻译：非易失性存储器件包括设置在衬底上的向上突出的翅片和跨过鳍片的控制栅电极。浮栅位于控制栅极和鳍之间，并包括第一存储栅和第二存储栅。第一存储门设置在翅片的侧壁上，第二存储栅极设置在鳍的顶表面上，并连接到第一存储门。第一绝缘层插入在第一存储栅极和鳍片的侧壁之间，第二绝缘层插入在第二存储栅极和鳍的顶表面之间。第二绝缘层比第一绝缘层薄。在控制栅电极和浮栅之间插入阻挡绝缘图案。

3. 发明授权

US07462904B2 Non-volatile memory devices and methods of forming the same 失效
标题翻译：非易失性存储器件及其形成方法
公开(公告)号：US07462904B2
公开(公告)日：2008-12-09
申请号：US11246454
申请日：2005-10-07
申请人： Seong-Gyun Kim , Ji-Hoon Park , Sang-Woo Kang , Sung-Woo Park
发明人： Seong-Gyun Kim , Ji-Hoon Park , Sang-Woo Kang , Sung-Woo Park
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , H01L27/11524 , H01L29/42324 , H01L29/66825 , H01L29/7881
摘要： A non-volatile memory device includes an upwardly protruding fin disposed on a substrate and a control gate electrode crossing the fin. A floating gate is interposed between the control gate electrode and the fin and includes a first storage gate and a second storage gate. The first storage gate is disposed on a sidewall of the fin, and the second storage gate is disposed on a top surface of the fin and is connected to the first storage gate. A first insulation layer is interposed between the first storage gate and the sidewall of the fin, and a second insulation layer is interposed between the second storage gate and the top surface of the fin. The second insulation layer is thinner than the first insulation layer. A blocking insulation pattern is interposed between the control gate electrode and the floating gate.
摘要翻译：非易失性存储器件包括设置在衬底上的向上突出的翅片和跨过鳍片的控制栅电极。浮栅位于控制栅极和鳍之间，并包括第一存储栅和第二存储栅。第一存储门设置在翅片的侧壁上，第二存储栅极设置在鳍的顶表面上，并连接到第一存储门。第一绝缘层插入在第一存储栅极和鳍片的侧壁之间，第二绝缘层插入在第二存储栅极和鳍的顶表面之间。第二绝缘层比第一绝缘层薄。在控制栅电极和浮栅之间插入阻挡绝缘图案。

4. 发明授权

US06858251B2 Lanthanum complex and process for the preparation of a BLT layer using same 失效
标题翻译：镧络合物和使用其制备BLT层的方法
公开(公告)号：US06858251B2
公开(公告)日：2005-02-22
申请号：US10143355
申请日：2002-05-09
申请人： Shi-Woo Rhee , Sang-Woo Kang
发明人： Shi-Woo Rhee , Sang-Woo Kang
IPC分类号： C01G29/00 , C07C49/92 , C07C211/65 , C07C217/08 , C07F5/00 , C23C16/40 , H01B3/00 , H01B3/12 , H01L21/316 , C23C16/06 , C23C16/14 , C23C16/22
CPC分类号： C07F5/003 , C23C16/40
摘要： A lanthanum complex of formula (I) having a low evaporation temperature can be used as a useful precursor for MOCVD of a BLT thin layer on semiconductor devices. wherein A is pentamethyldiethylenetriamine(PMDT) or triethoxytriethyleneamine(TETEA).
摘要翻译：具有低蒸发温度的式（I）的镧络合物可用作半导体器件上BLT薄层的MOCVD的有用前体。其中A是五甲基二亚乙基三胺（PMDT）或三乙氧基三亚乙基胺（TETEA）。

5. 发明申请

US20060179088A1 Key input device combined with key display unit and digital appliance having the same 有权
标题翻译：主要输入设备结合键显示单元和具有相同功能的数字设备
公开(公告)号：US20060179088A1
公开(公告)日：2006-08-10
申请号：US11347233
申请日：2006-02-06
申请人： Sang-woo Kang
发明人： Sang-woo Kang
IPC分类号： G06F3/00
CPC分类号： H04M1/7258 , G06F3/0238 , G06F3/04886 , H04M1/72547 , H04M1/72561 , H04M2250/22
摘要： A key input device combined with a key display unit and a digital appliance having the same are disclosed. The key input device includes a key display unit for displaying a character or an image that identifies a key, a touch sensing unit that moves down and up by a pressure applied to this key, and a signal generation unit for generating an electric signal in accordance with the pressure applied to the key, wherein the character or the image displayed on the key display unit can be changed.
摘要翻译：公开了一种与键显示单元和具有该键输入设备的数字设备组合的键输入设备。键输入装置包括用于显示识别键的字符或图像的按键显示单元，通过施加到该键的压力向下和向上移动的触摸感测单元，以及用于产生电信号的信号生成单元其中施加到键的压力，其中可以改变显示在键显示单元上的字符或图像。

6. 发明授权

US06774038B2 Organometal complex and method of depositing a metal silicate thin layer using same 有权
标题翻译：有机复合物及使用其沉积金属硅酸盐薄层的方法
公开(公告)号：US06774038B2
公开(公告)日：2004-08-10
申请号：US10423337
申请日：2003-04-25
申请人： Shi-Woo Rhee , Sang-Woo Kang , Won-Hee Nam
发明人： Shi-Woo Rhee , Sang-Woo Kang , Won-Hee Nam
IPC分类号： H01L2144
CPC分类号： H01L21/02142 , C23C16/40 , C23C16/45553 , H01L21/0228 , H01L21/3141 , H01L21/31608 , H01L21/31641
摘要： The present invention relates to an organometal complex and a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method for preparing a metal silicate thin layer using same. The inventive method can easily prepare the metal silicate thin layer having a desired composition which can be effectively used as a gate insulating layer for various semiconductor devices.
摘要翻译：本发明涉及一种使用其制备金属硅酸盐薄层的有机金属络合物和化学气相沉积（CVD）或原子层沉积（ALD）方法。本发明的方法可以容易地制备具有所需组成的金属硅酸盐薄层，其可以有效地用作各种半导体器件的栅极绝缘层。

7. 发明授权

US6090964A Organocuprous precursors for chemical vapor deposition of a copper film 失效
标题翻译：铜膜化学气相沉积的有机碳前驱体
公开(公告)号：US6090964A
公开(公告)日：2000-07-18
申请号：US233573
申请日：1999-01-19
申请人： Shi-Woo Rhee , Doo-Hwan Cho , Jai-Wook Park , Sang-Woo Kang
发明人： Shi-Woo Rhee , Doo-Hwan Cho , Jai-Wook Park , Sang-Woo Kang
IPC分类号： C07F1/08 , C23C16/18 , H01L21/285
CPC分类号： C23C16/18 , C07F1/08
摘要： A liquid organocuprous compound of formula (I) of the present invention can be conveniently used in a low-temperature CVD process for the production of a contaminant-free copper film having good step-coverage and hole-filling properties: ##STR1## wherein: R.sup.1 represents a C.sub.3-8 cycloalkyl group, andR.sup.2 and R.sup.3 are each independently a perfluorinated C.sub.1-4 alkyl group.
摘要翻译：本发明的式（I）的有机有机化合物可以方便地用于生产具有良好阶梯覆盖和充填孔性能的无污染铜膜的低温CVD工艺中：其中：R1表示 C3-8环烷基，R2和R3各自独立地为全氟化C 1-4烷基。

8. 发明授权

US08404542B2 Semiconductor device having transistor with vertical gate electrode and method of fabricating the same 失效
标题翻译：具有具有垂直栅电极的晶体管的半导体器件及其制造方法
公开(公告)号：US08404542B2
公开(公告)日：2013-03-26
申请号：US13075778
申请日：2011-03-30
申请人： Sang-Woo Kang , Jeong-Uk Han , Yong-Tae Kim , Seung-Beom Yoon
发明人： Sang-Woo Kang , Jeong-Uk Han , Yong-Tae Kim , Seung-Beom Yoon
IPC分类号： H01L21/336
CPC分类号： H01L29/785 , H01L27/105 , H01L27/115 , H01L27/228 , H01L27/2436 , H01L29/7881 , H01L29/792
摘要： A semiconductor device includes transistors with a vertical gate electrode. In a transistor structure, a semiconductor pattern has first and second sides facing in a transverse direction, and third and fourth sides facing in a longitudinal direction. Gate patterns are disposed adjacent to the first and second sides of the semiconductor pattern. Impurity patterns directly contact the third and fourth sides of the semiconductor pattern. A gate insulating pattern is interposed between the gate patterns and the semiconductor pattern.
摘要翻译：半导体器件包括具有垂直栅电极的晶体管。在晶体管结构中，半导体图案具有面向横向的第一和第二侧以及纵向方向上的第三和第四侧。栅极图案被布置成与半导体图案的第一和第二侧相邻。杂质图案直接接触半导体图案的第三面和第四面。栅极绝缘图案插入在栅极图案和半导体图案之间。

9. 发明申请

US20110146775A1 Quantum Dot Photovoltaic Device and Manufacturing Method Thereof 有权
标题翻译：量子点光伏器件及其制造方法
公开(公告)号：US20110146775A1
公开(公告)日：2011-06-23
申请号：US13061297
申请日：2009-08-28
申请人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
发明人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035218 , H01L31/18
摘要： The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.
摘要翻译：本发明提供一种基于半导体的光电器件及其制造方法。基于半导体的光电器件能够吸收宽带波长的光，并且由于具有高的电子 - 空穴对分离效率，因此光电转换效率高。更具体地说，制造光伏器件的方法包括以下步骤：a）在p型或n型半导体衬底上形成薄的半导体量子点膜，其中薄的半导体量子点膜包括介质内的半导体量子点，与半导体衬底掺杂相同类型的杂质; b）通过部分蚀刻形成孔阵列，其中孔阵列穿透薄的半导体量子点膜; c）在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂了杂质的半导体; 以及d）在所述半导体上顺序形成透明导电膜和上电极，其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。

10. 发明授权

US07423557B2 Key input device combined with key display unit and digital appliance having the same 有权
标题翻译：主要输入设备结合键显示单元和具有相同功能的数字设备
公开(公告)号：US07423557B2
公开(公告)日：2008-09-09
申请号：US11347233
申请日：2006-02-06
申请人： Sang-woo Kang
发明人： Sang-woo Kang
IPC分类号： H03M11/00
CPC分类号： H04M1/7258 , G06F3/0238 , G06F3/04886 , H04M1/72547 , H04M1/72561 , H04M2250/22
摘要： A key input device combined with a key display unit and a digital appliance having the same are disclosed. The key input device includes a key display unit for displaying a character or an image that identifies a key, a touch sensing unit that moves down and up by a pressure applied to this key, and a signal generation unit for generating an electric signal in accordance with the pressure applied to the key, wherein the character or the image displayed on the key display unit can be changed.
摘要翻译：公开了一种与键显示单元和具有该键输入设备的数字设备组合的键输入设备。键输入装置包括用于显示识别键的字符或图像的按键显示单元，通过施加到该键的压力向下和向上移动的触摸感测单元，以及用于产生电信号的信号生成单元其中施加到键的压力，其中可以改变显示在键显示单元上的字符或图像。

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