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1. 发明申请

US20130293524A1 THIN FILM TRANSISTOR ARRAY PANEL AND DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译：薄膜晶体管阵列和包括其的显示器件
公开(公告)号：US20130293524A1
公开(公告)日：2013-11-07
申请号：US13597940
申请日：2012-08-29
申请人： Joon Yong PARK , Chang Oh JEONG , Byeong Beom KIM , Hong Long NING , Hyung Jun KIM , Sang Won SHIN
发明人： Joon Yong PARK , Chang Oh JEONG , Byeong Beom KIM , Hong Long NING , Hyung Jun KIM , Sang Won SHIN
IPC分类号： G06F3/038
CPC分类号： H01L27/124 , G02F1/13458 , G02F2202/16 , H01L29/458
摘要： Exemplary embodiments of the present invention relate to a panel and a display device including the same, the panel including a substrate, a signal line arranged on the substrate, the signal line configured to transmit a driving signal, an insulating layer arranged on the signal line, and a pixel electrode and a contact assistant arranged on the insulating layer. The contact assistant is electrically connected to a portion of the signal line, the contact assistant includes indium zinc oxide doped with a metal oxide not including indium or zinc, and the metal oxide has a smaller Gibbs free energy than zinc oxide.
摘要翻译：本发明的示例性实施例涉及面板和包括该面板的显示装置，面板包括基板，布置在基板上的信号线，被配置为传输驱动信号的信号线，布置在信号线上的绝缘层以及布置在绝缘层上的像素电极和接触助剂。接触辅助件电连接到信号线的一部分，接触助剂包括掺杂有不包括铟或锌的金属氧化物的氧化铟锌，并且金属氧化物具有比氧化锌更小的吉布斯自由能。

2. 发明申请

US20100097523A1 DISPLAY APPARATUS AND CONTROL METHOD THEREOF 审中-公开
标题翻译：显示装置及其控制方法
公开(公告)号：US20100097523A1
公开(公告)日：2010-04-22
申请号：US12485966
申请日：2009-06-17
申请人： Sang-won SHIN
发明人： Sang-won SHIN
IPC分类号： H04N11/00
CPC分类号： H04N5/445 , H04N5/278 , H04N7/0885 , H04N21/4355 , H04N21/4394 , H04N21/4858 , H04N21/4884
摘要： Disclosed are a display apparatus and a control method thereof, which are capable of adjusting a characteristic of a caption depending on volume of sound. The display apparatus includes: a sound processing unit which processes sound; a caption processing unit which processes a caption; a display unit which displays the caption processed in the caption processing unit; and a controller which controls the caption processing unit to adjust a characteristic of the caption in correspondence to the volume of sound.
摘要翻译：公开了一种显示装置及其控制方法，其能够根据声音的音量来调整字幕的特性。显示装置包括：处理声音的声音处理单元; 字幕处理单元，处理标题; 显示单元，其显示在字幕处理单元中处理的字幕; 以及控制器，其控制字幕处理单元，以根据声音音量调整字幕的特性。

3. 发明授权

US06246166B1 Electrode of electron gun for cathode ray tube 失效
标题翻译：阴极射线管电子枪用电极
公开(公告)号：US06246166B1
公开(公告)日：2001-06-12
申请号：US09336700
申请日：1999-06-21
申请人： Min-cheol Bae , Sang-won Shin
发明人： Min-cheol Bae , Sang-won Shin
IPC分类号： H01J2946
CPC分类号： H01J29/02
摘要： An electrode of an electron gun for a cathode ray tube with an improved structure so as to enhance the flatness of the electrode. The electrode includes an electron beam passing plane on which one or more electron beam passing holes are formed, an upper sloping portion of a truncated cone shape, slantingly extending downward and outward from the peripheral edges of the electron beam passing plane, and a vertically extending portion of a cylindrical shape, extending downward from the lower portion of the upper sloping portion and extending substantially perpendicular to the electron beam passing plane.
摘要翻译：一种用于阴极射线管的电子枪的电极，其具有改进的结构，以便提高电极的平坦度。电极包括形成有一个或多个电子束通过孔的电子束通过平面，从电子束通过平面的周边向下且向外倾斜地延伸的截锥形的上倾斜部分，以及垂直延伸的从上部倾斜部分的下部向下延伸并基本上垂直于电子束通过平面延伸的圆柱形部分。

4. 发明授权

US09601520B2 Thin film transistor array panel and display device including the same 有权
公开(公告)号：US09601520B2
公开(公告)日：2017-03-21
申请号：US13597940
申请日：2012-08-29
申请人： Joon Yong Park , Chang Oh Jeong , Byeong Beom Kim , Hong Long Ning , Hyung Jun Kim , Sang Won Shin
发明人： Joon Yong Park , Chang Oh Jeong , Byeong Beom Kim , Hong Long Ning , Hyung Jun Kim , Sang Won Shin
IPC分类号： H01L27/12 , H01L29/45 , G02F1/1345
CPC分类号： H01L27/124 , G02F1/13458 , G02F2202/16 , H01L29/458
摘要： Exemplary embodiments of the present invention relate to a panel and a display device including the same, the panel including a substrate, a signal line arranged on the substrate, the signal line configured to transmit a driving signal, an insulating layer arranged on the signal line, and a pixel electrode and a contact assistant arranged on the insulating layer. The contact assistant is electrically connected to a portion of the signal line, the contact assistant includes indium zinc oxide doped with a metal oxide not including indium or zinc, and the metal oxide has a smaller Gibbs free energy than zinc oxide.

5. 发明授权

US09196746B2 Thin film transistor comprising main active layer and sub active layer, and method of manufacturing the same 有权
标题翻译：包括主活性层和次活性层的薄膜晶体管及其制造方法
公开(公告)号：US09196746B2
公开(公告)日：2015-11-24
申请号：US13487409
申请日：2012-06-04
申请人： Hong-Long Ning , Byeong-Beom Kim , Chang-Oh Jeong , Sang-Won Shin , Hyeong-Suk Yoo , Xin-Xing Li , Joon-Yong Park , Hyun-Ju Kang , Su-Kyoung Yang , Kyung-Seop Kim
发明人： Hong-Long Ning , Byeong-Beom Kim , Chang-Oh Jeong , Sang-Won Shin , Hyeong-Suk Yoo , Xin-Xing Li , Joon-Yong Park , Hyun-Ju Kang , Su-Kyoung Yang , Kyung-Seop Kim
IPC分类号： H01L29/10 , H01L29/786
CPC分类号： H01L29/78693 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.
摘要翻译：薄膜晶体管包括在基板上的栅电极，与栅电极电连接并包括暴露的沟道部分的主有源层，与主有源层电连接的源电极，与主有源层电连接的漏电极，源电极并与主有源层电连接，以及与主活性层电连接的子有源层。

6. 发明申请

US20130306466A1 TARGET FOR SPUTTERING AND APPARATUS INCLUDING THE SAME 审中-公开
标题翻译：用于喷射和装置的目标包括它们
公开(公告)号：US20130306466A1
公开(公告)日：2013-11-21
申请号：US13617741
申请日：2012-09-14
申请人： Hong Long NING , Byeong-Beom KIM , Joon Yong PARK , Chang Oh JEONG , Sang Won SHIN , Dong Min LEE , Xun Zhu
发明人： Hong Long NING , Byeong-Beom KIM , Joon Yong PARK , Chang Oh JEONG , Sang Won SHIN , Dong Min LEE , Xun Zhu
IPC分类号： C23C14/08
CPC分类号： C23C14/3407
摘要： A sputtering target includes a plurality of targets and edges of the targets overlap each other.
摘要翻译：溅射靶包括多个靶，靶的边缘彼此重叠。

7. 发明申请

US20120286272A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20120286272A1
公开(公告)日：2012-11-15
申请号：US13487409
申请日：2012-06-04
申请人： Hong-Long NING , Byeong-Beom KIM , Chang-Oh JEONG , Sang-Won SHIN , Hyeong-Suk YOO , Xin-Xing LI , Joon-Yong PARK , Hyun-Ju KANG , Su-Kyoung YANG , Kyung-Seop KIM
发明人： Hong-Long NING , Byeong-Beom KIM , Chang-Oh JEONG , Sang-Won SHIN , Hyeong-Suk YOO , Xin-Xing LI , Joon-Yong PARK , Hyun-Ju KANG , Su-Kyoung YANG , Kyung-Seop KIM
IPC分类号： H01L29/786 , H01L33/08
CPC分类号： H01L29/78693 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.
摘要翻译：薄膜晶体管包括在基板上的栅电极，与栅电极电连接并包括暴露的沟道部分的主有源层，与主有源层电连接的源电极，与主有源层电连接的漏电极，源电极并与主有源层电连接，以及与主活性层电连接的子有源层。

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