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1. 发明授权

US08952876B2 Display substrate and method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08952876B2
公开(公告)日：2015-02-10
申请号：US12900846
申请日：2010-10-08
申请人： Hyung-Jun Kim , Sung-Haeng Cho , Yong-Mo Choi
发明人： Hyung-Jun Kim , Sung-Haeng Cho , Yong-Mo Choi
IPC分类号： G09G3/36 , G11C19/28 , G02F1/1362 , G11C19/18
CPC分类号： G11C19/28 , G02F1/1362 , G02F2202/104 , G11C19/184
摘要： A display substrate includes a base substrate, a first insulating layer formed on a base substrate, a pixel including a pixel electrode having the first insulating layer, and a circuit including a circuit transistor disposed on a peripheral area to drive the pixel. The pixel includes a first channel formed on the base substrate having the first insulating layer formed thereon. The first channel includes a poly-silicon layer, a first source electrode and a first drain electrode formed on the first channel that are spaced apart from each other, and a first gate electrode formed on the first source electrode and the first drain electrode corresponding to the first channel which is formed of the transparent conductive material. The poly-silicon layer is formed at a front channel portion of the first channel proximal to the first gate electrode through the first gate electrode.
摘要翻译：显示基板包括基底基板，形成在基底基板上的第一绝缘层，包括具有第一绝缘层的像素电极的像素，以及包括设置在外围区域上以驱动像素的电路晶体管的电路。像素包括形成在其上形成有第一绝缘层的基底基板上的第一通道。第一通道包括形成在第一通道上彼此间隔开的多晶硅层，第一源电极和第一漏极，以及形成在第一源电极和第一漏电极上的第一栅电极，由透明导电材料形成的第一通道。多晶硅层通过第一栅电极形成在靠近第一栅电极的第一通道的前通道部分处。

2. 发明授权

US08558240B2 Thin film transistor display panel having a gate wire with different thicknesses and manufacturing method thereof 有权
标题翻译：具有不同厚度的栅极线的薄膜晶体管显示面板及其制造方法
公开(公告)号：US08558240B2
公开(公告)日：2013-10-15
申请号：US13010656
申请日：2011-01-20
申请人： Hyung-Jun Kim , Chang-Oh Jeong , Jae-Hong Kim
发明人： Hyung-Jun Kim , Chang-Oh Jeong , Jae-Hong Kim
IPC分类号： H01L27/14
CPC分类号： H01L29/6675 , G02F1/136213 , G02F1/136286 , G02F2001/13629 , H01L27/124 , H01L29/42384
摘要： A thin film transistor display panel includes a substrate, a gate wire on the substrate and including a gate line and a gate electrode; a gate insulating layer on the gate wire; a semiconductor layer on the gate insulating layer; a data wire including a source electrode on the semiconductor layer, a drain electrode opposing the source electrode with respect to the gate electrode, and a data line; a passivation layer on the data wire having a contact hole exposing the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the contact hole. The gate wire has a first region and second region where the gate line and the gate electrode are positioned, respectively. The thickness of the gate wire in the first region is greater than the thickness of the gate wire in the second region.
摘要翻译：薄膜晶体管显示面板包括衬底，衬底上的栅极线，并且包括栅极线和栅电极; 栅极线上的栅极绝缘层; 栅极绝缘层上的半导体层; 数据线，包括半导体层上的源电极，与源电极相对于栅电极相对的漏电极和数据线; 数据线上的钝化层具有暴露漏电极的接触孔; 以及钝化层上的像素电极，并通过接触孔与漏电极连接。栅极线分别具有栅极线和栅电极所在的第一区域和第二区域。第一区域中的栅极线的厚度大于第二区域中的栅极线的厚度。

3. 发明授权

US08304816B2 Image sensor capable of increasing photosensitivity 有权
标题翻译：能够增加感光度的图像传感器
公开(公告)号：US08304816B2
公开(公告)日：2012-11-06
申请号：US13216874
申请日：2011-08-24
申请人： Myoung-Shik Kim , Hyung-Jun Kim
发明人： Myoung-Shik Kim , Hyung-Jun Kim
IPC分类号： H01L31/0376
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14689 , H01L27/14692
摘要： An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the substrate, a photodiode formed in the amorphous silicon layer, and a transfer gate formed over the substrate adjacent to the photodiode and transferring photoelectrons received from the photodiode.
摘要翻译：提供了能够克服光敏感性降低的图像传感器，其由使用单晶硅衬底而提供，并且提供了制造它们的方法。图像传感器包括单晶硅衬底，在衬底内形成的非晶硅层，形成在非晶硅层中的光电二极管，以及形成在与光电二极管相邻的衬底上的传输栅极，并传送从光电二极管接收的光电子。

4. 发明申请

US20120133873A1 LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：液晶显示器及其制造方法
公开(公告)号：US20120133873A1
公开(公告)日：2012-05-31
申请号：US13193488
申请日：2011-07-28
申请人： Ji-Young PARK , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
发明人： Ji-Young PARK , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
IPC分类号： G02F1/1333 , H01L33/16
CPC分类号： H01L27/1288 , G02F1/1362 , G02F2001/136231 , H01L29/41733
摘要： A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.
摘要翻译：制造液晶显示器的方法包括：在第一基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层的整个表面上依次形成半导体层，非晶硅层和数据金属层; 对准半导体层和数据金属层的边缘; 在栅绝缘层和数据金属层上形成透明导电层; 通过图案化透明导电层形成第一像素电极和第二像素电极; 以及使用所述第一像素电极和所述第二像素电极作为掩模，通过蚀刻所述数据金属层和所述非晶硅层来形成包括源电极，漏电极和欧姆接触层的数据线，并且使所述半导体在源电极和漏电极。

5. 发明授权

US08183570B2 Thin film transistor array panel 有权
标题翻译：薄膜晶体管阵列面板
公开(公告)号：US08183570B2
公开(公告)日：2012-05-22
申请号：US12946953
申请日：2010-11-16
申请人： Dong-Gyu Kim , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
发明人： Dong-Gyu Kim , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
IPC分类号： H01L29/04
CPC分类号： G02F1/136213 , H01L27/1255
摘要： A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.
摘要翻译：一种薄膜晶体管阵列面板，其中形成中间存储电极和与薄膜晶体管的漏极重叠从而形成存储电容的存储电极。因此，可以形成足够的存储电容，而不会降低液晶显示器的开口率和透光率。此外，可以通过连接到栅极金属层的连接构件充分形成电容。

6. 发明申请

US20110284937A1 SPIN TRANSISTOR USING N-TYPE AND P-TYPE DOUBLE CARRIER SUPPLY LAYER STRUCTURE 有权
标题翻译：使用N型和P型双载波供电层结构的旋转晶体管
公开(公告)号：US20110284937A1
公开(公告)日：2011-11-24
申请号：US12858702
申请日：2010-08-18
申请人： Hyung Jun KIM , Jin Dong Song , Hyun Cheol Koo , Kyung Ho Kim , Suk Hee Han
发明人： Hyung Jun KIM , Jin Dong Song , Hyun Cheol Koo , Kyung Ho Kim , Suk Hee Han
IPC分类号： H01L29/82
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1675 , G11C11/18 , Y10S257/902
摘要： A spin transistor that includes: a semiconductor substrate including an upper cladding layer and a lower cladding layer, and a channel layer interposed between the upper and lower cladding layers; a ferromagnetic source and a ferromagnetic drain formed on the semiconductor substrate and spaced from each other in a length direction of the channel layer; and a gate electrode formed on the semiconductor substrate between the source and the drain and having applied a gate voltage thereto to control a spin precession of an electron passing through the channel layer, wherein the semiconductor substrate includes a first carrier supply layer of a first conductivity type disposed below the lower cladding layer and supplying carriers to the channel layer, and a second carrier supply layer of a second conductivity type opposite to the first conductivity type formed on the upper cladding layer and supplying the carriers to the channel layer.
摘要翻译：一种自旋晶体管，包括：包括上包层和下包层的半导体衬底，以及介于上包层和下包层之间的沟道层; 形成在所述半导体基板上并且在所述沟道层的长度方向上彼此间隔开的铁磁源和铁磁性漏极; 以及形成在所述源极和漏极之间的所述半导体衬底上并且施加了栅极电压以用于控制通过所述沟道层的电子的自旋进动的栅电极，其中所述半导体衬底包括具有第一导电性的第一载流子供应层类型，其设置在所述下包层下方并且将沟道层供给到所述沟道层;以及第二导电类型的第二载流子供应层，其形成在所述上包层上并且将所述载流子提供给所述沟道层。

7. 发明申请

US20110225529A1 TEXT INPUT METHOD IN PORTABLE DEVICE AND PORTABLE DEVICE SUPPORTING THE SAME 有权
标题翻译：便携式设备中的文本输入方法和支持它的便携式设备
公开(公告)号：US20110225529A1
公开(公告)日：2011-09-15
申请号：US13042696
申请日：2011-03-08
申请人： Se Hwan PARK , Sung Wook PARK , Hyung Jun KIM , Ji Hoon LEE
发明人： Se Hwan PARK , Sung Wook PARK , Hyung Jun KIM , Ji Hoon LEE
IPC分类号： G06F3/048
CPC分类号： G06F9/454 , G06F3/018 , G06F3/0235 , G06F3/0237 , G06F3/0481
摘要： A text input method in a portable device and a portable device supporting the same are provided. The portable device includes, a touch screen including a display unit for displaying a text input area and a text display area including at least one consonant and vowel, and a touch panel provided at an upper side of the display unit for generating a touch event, and a control unit for controlling text displayed according to a touch event generated from the touch screen, in which the control unit detects multi-touch events for at least two key icons output on the text input area, and controls the display of a specific text composed of a combination of the multi-touched key icons based on the detected multi-touch events.
摘要翻译：提供了便携式设备中的文本输入方法和支持它的便携式设备。便携式设备包括：触摸屏，其包括用于显示文本输入区域的显示单元和包括至少一个辅音和元音的文本显示区域;以及设置在所述显示单元的上侧以产生触摸事件的触摸面板，以及控制单元，用于控制根据从触摸屏产生的触摸事件显示的文本，其中控制单元检测在文本输入区域上输出的至少两个键图标的多点触摸事件，并且控制特定文本的显示由基于检测到的多点触摸事件的多点触摸的键图标的组合构成。

8. 发明申请

US20110110393A1 HEATING FURNACE FOR TESTING MIDDLE AND LONG SPAN STRUCTURES 有权
标题翻译：用于测试中间和长跨度结构的加热炉
公开(公告)号：US20110110393A1
公开(公告)日：2011-05-12
申请号：US12941255
申请日：2010-11-08
申请人： HEUNG YOUL KIM , BONG JAE LEE , HYUNG JUN KIM
发明人： HEUNG YOUL KIM , BONG JAE LEE , HYUNG JUN KIM
IPC分类号： G01N3/18
CPC分类号： G01N3/60 , G01M99/002 , G01N3/08 , G01N2203/0226 , G01N2203/0264 , G01N2203/0282 , G01N2203/0694
摘要： Provided is a heating furnace for testing middle and long span structures including a modular partition structure to adjust an inner volume of the heating furnace, effectively performing a load-coupled heating test of full scale members such as a beam, a short column, a slab, a conjunction frame, and a deck plate.The heating furnace for testing middle and long span structures includes a partition unit formed of a refractory material and partitioning a heating space in a main body to block transfer of heat generated from one space to the other space. A test sample is installed in the heating space of the main body partitioned by the partition unit according to a size of the test sample, and then, heat and a compression force are applied to the test sample to perform a fireproof performance test.The fireproof performance test of structure members having various lengths of 4 m, 6 m and 10 m can be performed, and consumption of various utilities consumed during the test can be optimized. In addition, since the heating furnace can perform an actual material test of full scale structures such as continuous span beams and long span beams, deck plates, or bridge trusses of civil structures, deck plates for ships, and so on, target fireproof performance estimation of various shape conditions can be performed to increase applicability of the test.
摘要翻译：提供了一种用于测试中长跨距结构的加热炉，包括模块化分隔结构以调节加热炉的内部容积，有效地执行诸如梁，短塔，板坯之类的全尺寸构件的负载耦合加热试验，连接框架和甲板板。用于测试中间和长跨度结构的加热炉包括由耐火材料形成并且分隔主体中的加热空间的分隔单元，以阻挡从一个空间产生的热量传递到另一个空间。将测试样品安装在根据测试样本的尺寸由分隔单元分隔的主体的加热空间中，然后对测试样品施加热和压缩力以进行耐火性能测试。可以进行各种长度为4m，6m和10μm的结构件的耐火性能测试，并且可以优化在测试期间消耗的各种实用程序的消耗。另外，由于加热炉可以进行全尺寸结构的实际材料试验，例如连续跨梁和长跨梁，甲板或者民用结构的桥梁桁架，船舶甲板等，目标防火性能估计可以执行各种形状条件以增加测试的适用性。

9. 发明申请

US20110057194A1 THIN FILM TRANSISTOR ARRAY PANEL 有权
标题翻译：薄膜晶体管阵列
公开(公告)号：US20110057194A1
公开(公告)日：2011-03-10
申请号：US12946953
申请日：2010-11-16
申请人： DONG-GYU KIM , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
发明人： DONG-GYU KIM , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
IPC分类号： H01L33/16
CPC分类号： G02F1/136213 , H01L27/1255
摘要： A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and light transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.
摘要翻译：一种薄膜晶体管阵列面板，其中形成中间存储电极和与薄膜晶体管的漏极重叠从而形成存储电容的存储电极。因此，可以形成足够的存储电容，而不会降低液晶显示器的开口率和透光率。此外，可以通过连接到栅极金属层的连接构件充分形成电容。

10. 发明授权

US07817195B2 Apparatus and method for automatic conversion to digital zoom mode 有权
标题翻译：用于自动转换为数码变焦模式的装置和方法
公开(公告)号：US07817195B2
公开(公告)日：2010-10-19
申请号：US11375266
申请日：2006-03-13
申请人： Hyung-Jun Kim
发明人： Hyung-Jun Kim
IPC分类号： H04N5/262 , H04N5/225
CPC分类号： H04N5/232
摘要： An apparatus and method of automatic conversion to a digital zoom mode allow a digital zoom to be executed by automatically converting from a high-resolution mode that does not support a digital zoom to a highest resolution mode supporting the digital zoom when a digital zoom key is pushed. The apparatus includes a key pad having a digital zoom key, a video processing unit for processing video data from the camera unit to determine a resolution and execute a digital zoom function, and a control unit for controlling the video processing unit to convert a resolution mode that does not support the digital zoom function to a highest resolution mode among resolution modes supporting the digital zoom function and execute the digital zoom function when the digital zoom key is pressed in the resolution mode that does not support the digital zoom function.
摘要翻译：自动转换为数字变焦模式的装置和方法允许通过在不支持数字变焦的高分辨率模式下自动转换数字变焦到支持数字变焦的最高分辨率模式，当数字变焦键为推。该装置包括具有数字变焦键的键盘，用于处理来自相机单元的视频数据以确定分辨率并执行数字变焦功能的视频处理单元，以及控制单元，用于控制视频处理单元转换分辨率模式在支持数字变焦功能的分辨率模式中，数字变焦功能不支持数字变焦功能，并且在不支持数码变焦功能的分辨率模式下按数字变焦键时，执行数码变焦功能。

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