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1. 发明授权

US4545848A HCT Crystal growth method 失效
标题翻译： HCT晶体生长法
公开(公告)号：US4545848A
公开(公告)日：1985-10-08
申请号：US439800
申请日：1982-11-08
申请人： Sandor L. Lehoczky , Frank R. Szofran
发明人： Sandor L. Lehoczky , Frank R. Szofran
IPC分类号： C30B11/00 , C30B21/02
CPC分类号： C30B11/00 , C30B29/48
摘要： A method of preparing pseudobinary mercury, cadmium, telluride (HCT) crystals by controlled crystal growth in a fused silica ampule uses a modified Bridgman-Stockbarger method. In this method, the alloy is cast into one end of the ampule, inverted, heated to a temperature between the liquidus and solidus temperatures of the alloy and directionally solidified in a two zone furnace. The parameters of the solidification treatment are controlled according to the formulaT.sub.U.sup.4 -T.sub.I.sup.4 =T.sub.I.sup.4 -T.sub.L.sup.4,where T.sub.U =the temperature of the furnace upper zone, T.sub.L =the temperature of the furnace lower zone, and T.sub.I =the solidus temperature of the crystal composition. The rate of transfer of the crystal through the furnace and the size of the zone barrier are also controlled. The modified method imparts homogeneity to the crystal composition, both axially of the crystal and radially. The crystals produced by the method have superior properties and a much higher yield.
摘要翻译：通过熔融二氧化硅安瓿中受控晶体生长制备假二元汞，镉，碲化物（HCT）晶体的方法使用改进的Bridgman-Stockbarger方法。在该方法中，将合金铸造到安瓿的一端，倒置，加热到合金的液相线和固相线温度之间的温度，并在两区域炉中定向凝固。凝固处理的参数根据公式TU4-TI4 = TI4-TL4进行控制，其中TU =炉上部区域的温度，TL =炉下部区域的温度，TI =晶体的固相线温度组成。晶体通过炉的转移速率和区域阻挡层的尺寸也受到控制。该改性方法在晶体的轴向和径向上均匀地赋予晶体组成。该方法生产的晶体具有优异的性能和更高的收率。

2. 发明授权

US5173087A Crystal growth in a microgravity environment 失效
标题翻译：晶体生长在微重力环境中
公开(公告)号：US5173087A
公开(公告)日：1992-12-22
申请号：US717447
申请日：1991-06-19
申请人： Roger L. Kroes , Donald A. Reiss , Sandor L. Lehoczky
发明人： Roger L. Kroes , Donald A. Reiss , Sandor L. Lehoczky
IPC分类号： C30B30/08
CPC分类号： C30B30/08 , Y10S117/901
摘要： Gravitational phenomena, including convection, sedimentation, and interactions of materials with their containers all affect the crystal growth process. If they are not taken into consideration they can have adverse effects on the quantity and quality of crystals produced. As a practical matter, convection and sedimentation can be completely eliminated only under conditions of low gravity attained during orbital flight. There is, then, an advantage to effecting crystallization in space. But in the absence of of convection in a microgravity environment cooling proceeds by thermal diffusion from the walls to the center of the solution chamber. This renders control of nucleation difficult. Accordingly there is a need for a new and improved nucleation process in space. Herein crystals are nucleated by creating a small localized region of high relative supersaturation in a host solution at a lower degree of supersaturation.
摘要翻译：重力现象，包括对流，沉积和材料与其容器的相互作用都会影响晶体生长过程。如果不考虑它们，可能会对生产的晶体的数量和质量产生不利影响。实际上，只有在轨道飞行中达到的重力低的条件下才能完全消除对流和沉降。那么在空间中实现结晶是有利的。但是，在微重力环境中没有对流的情况下，通过从壁到溶液室的中心的热扩散来进行冷却。这使得成核的控制变得困难。因此，需要在空间中新的和改进的成核过程。本文通过在较低的过饱和度下在宿主溶液中产生高相对过饱和度的小的局部区域来形成晶体。

3. 发明授权

US4863553A Method of preparing radially homogenous mercury cadmium telluride crystals 失效
标题翻译：制备径向均匀的汞碲化镉晶体的方法
公开(公告)号：US4863553A
公开(公告)日：1989-09-05
申请号：US811309
申请日：1985-12-17
申请人： Sandor L. Lehoczky , Frank R. Szofran
发明人： Sandor L. Lehoczky , Frank R. Szofran
IPC分类号： C30B11/00
CPC分类号： C30B11/003 , C30B11/00 , C30B29/48
摘要： Hg.sub.1-x Cd.sub.x Te is prepared in an improved directional solidification method in which a precast alloy sample containing predetermined amounts of Hg, Cd and Te is disposed in a sealed ampule (12) and a furnace (10) providing two controlled temperature zones (16, 18) is translated upward past the ampule so as to provide melting and resolidification. The present improvement is directed to maintaining the zones at temperatures determined in accordance with a prescribed formula providing a thermal barrier (32) between the zones with a maximum thickness and translating the furnace past the zones at a rate less than 0.31 .mu.m/sec.
摘要翻译：在改进的定向凝固方法中制备Hg1-xCdxTe，其中将含有预定量的Hg，Cd和Te的预制合金样品设置在密封的安瓿（12）和提供两个受控温度区（16,18）的炉（10））向上翻过安瓿，以提供熔化和再凝固。本改进旨在将区域保持在根据规定的公式确定的温度下，在具有最大厚度的区域之间提供热障（32），并且以小于0.31μm/ sec的速率平移炉子经过区域。

4. 发明授权

US4740264A Liquid encapsulated float zone process and apparatus 失效
标题翻译：液体封装浮区过程和装置
公开(公告)号：US4740264A
公开(公告)日：1988-04-26
申请号：US924399
申请日：1986-10-29
申请人： Robert J. Naumann , Donald O. Frazier , Sandor L. Lehoczky , Marcus Vlasse , Barbara R. Facemire
发明人： Robert J. Naumann , Donald O. Frazier , Sandor L. Lehoczky , Marcus Vlasse , Barbara R. Facemire
IPC分类号： C30B13/00 , C30B27/00 , C30B30/08 , C30B27/02
CPC分类号： C30B29/40 , C30B13/00 , C30B27/00 , C30B29/42 , C30B29/48 , C30B30/08 , Y10S117/901 , Y10T117/108
摘要： Process and apparatus for growing crystals using float zone techniques. A rod (34) of crystalline materials is disposed in a cylindrical container (36), with a space being left between the rod and container walls. The space is filled with an encapsulant (72), selected to have a slightly lower melting point than the crystalline material. The rod is secured to a container end cap (38) at one end and to a shaft (60) at its other end. A piston (64) slides over the rod and provides pressure to prevent loss of volatile components upon melting of the rod. Prior to melting the rod the container is first heated to melt the encapsulant, with any off-gas from this step being vented to a cavity behind the piston. The piston moves slightly forward owing to volume change upon melting of the encapsulant, and the vent passageway (74) is closed. The container is then moved longitudinally through a heated zone (32) to progressively melt sections of the rod as in conventional float zone processes.
摘要翻译：使用浮法技术生长晶体的工艺和设备。结晶材料的杆（34）设置在圆柱形容器（36）中，空间留在杆和容器壁之间。该空间填充有密封剂（72），其选择为具有比结晶材料稍低的熔点。杆在一端固定到容器端盖（38）并在其另一端固定到轴（60）。活塞（64）在杆上滑动并提供压力以防止棒熔化时挥发性成分的损失。在熔化棒之前，首先将容器加热以使密封剂熔化，从该步骤的任何废气被排放到活塞后面的空腔中。活塞在密封剂熔化时由于体积变化而略微向前移动，并且排气通道（74）关闭。然后将容器纵向移动通过加热区域（32）以逐渐熔化杆的部分，如在常规浮法区域过程中。

5. 发明授权

US4738831A Method and apparatus for growing crystals 失效
标题翻译：生长晶体的方法和装置
公开(公告)号：US4738831A
公开(公告)日：1988-04-19
申请号：US925189
申请日：1986-10-31
申请人： Robert J. Naumann , Sandor L. Lehoczky , Donald O. Frazier
发明人： Robert J. Naumann , Sandor L. Lehoczky , Donald O. Frazier
IPC分类号： C30B11/00 , C30B30/08 , B01D9/00
CPC分类号： C30B30/08 , C30B11/00 , C30B11/002 , C30B29/48 , C30B29/54 , C30B29/60 , Y10S117/902 , Y10T117/1024 , Y10T117/1096
摘要： A crystal growth apparatus (10) having a heated spherical growth container (12) is filled with a crystalline material in solid or liquid form. The crystalline material is heated by resistance heating wire (58) to a predetermined temperature, whereupon the application of heat to the crystalline material is reduced and the accumulated heat is drawn off and dissipated by a seed crystal (76) attached to a rod (70) of heat conductive material, which in turn is attached to a heat dissipating member (72). This results in the formation of a single, defect-free crystal on seed crystal (76), which grows outward in a generally spherical configuration as more heat is removed.
摘要翻译：具有加热的球形生长容器（12）的晶体生长装置（10）用固体或液体形式的结晶材料填充。结晶材料通过电阻加热丝（58）加热到预定温度，由此减少对结晶材料的加热，并且累积的热量被附着在杆（70）上的晶种（76）排出并消散），其又连接到散热构件（72）。这导致在种子晶体（76）上形成单个无缺陷晶体（76），其在更多的热量被去除时以大致球形的构型向外生长。

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