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1. 发明授权

US4863553A Method of preparing radially homogenous mercury cadmium telluride crystals 失效
标题翻译：制备径向均匀的汞碲化镉晶体的方法
公开(公告)号：US4863553A
公开(公告)日：1989-09-05
申请号：US811309
申请日：1985-12-17
申请人： Sandor L. Lehoczky , Frank R. Szofran
发明人： Sandor L. Lehoczky , Frank R. Szofran
IPC分类号： C30B11/00
CPC分类号： C30B11/003 , C30B11/00 , C30B29/48
摘要： Hg.sub.1-x Cd.sub.x Te is prepared in an improved directional solidification method in which a precast alloy sample containing predetermined amounts of Hg, Cd and Te is disposed in a sealed ampule (12) and a furnace (10) providing two controlled temperature zones (16, 18) is translated upward past the ampule so as to provide melting and resolidification. The present improvement is directed to maintaining the zones at temperatures determined in accordance with a prescribed formula providing a thermal barrier (32) between the zones with a maximum thickness and translating the furnace past the zones at a rate less than 0.31 .mu.m/sec.
摘要翻译：在改进的定向凝固方法中制备Hg1-xCdxTe，其中将含有预定量的Hg，Cd和Te的预制合金样品设置在密封的安瓿（12）和提供两个受控温度区（16,18）的炉（10））向上翻过安瓿，以提供熔化和再凝固。本改进旨在将区域保持在根据规定的公式确定的温度下，在具有最大厚度的区域之间提供热障（32），并且以小于0.31μm/ sec的速率平移炉子经过区域。

2. 发明授权

US4545848A HCT Crystal growth method 失效
标题翻译： HCT晶体生长法
公开(公告)号：US4545848A
公开(公告)日：1985-10-08
申请号：US439800
申请日：1982-11-08
申请人： Sandor L. Lehoczky , Frank R. Szofran
发明人： Sandor L. Lehoczky , Frank R. Szofran
IPC分类号： C30B11/00 , C30B21/02
CPC分类号： C30B11/00 , C30B29/48
摘要： A method of preparing pseudobinary mercury, cadmium, telluride (HCT) crystals by controlled crystal growth in a fused silica ampule uses a modified Bridgman-Stockbarger method. In this method, the alloy is cast into one end of the ampule, inverted, heated to a temperature between the liquidus and solidus temperatures of the alloy and directionally solidified in a two zone furnace. The parameters of the solidification treatment are controlled according to the formulaT.sub.U.sup.4 -T.sub.I.sup.4 =T.sub.I.sup.4 -T.sub.L.sup.4,where T.sub.U =the temperature of the furnace upper zone, T.sub.L =the temperature of the furnace lower zone, and T.sub.I =the solidus temperature of the crystal composition. The rate of transfer of the crystal through the furnace and the size of the zone barrier are also controlled. The modified method imparts homogeneity to the crystal composition, both axially of the crystal and radially. The crystals produced by the method have superior properties and a much higher yield.
摘要翻译：通过熔融二氧化硅安瓿中受控晶体生长制备假二元汞，镉，碲化物（HCT）晶体的方法使用改进的Bridgman-Stockbarger方法。在该方法中，将合金铸造到安瓿的一端，倒置，加热到合金的液相线和固相线温度之间的温度，并在两区域炉中定向凝固。凝固处理的参数根据公式TU4-TI4 = TI4-TL4进行控制，其中TU =炉上部区域的温度，TL =炉下部区域的温度，TI =晶体的固相线温度组成。晶体通过炉的转移速率和区域阻挡层的尺寸也受到控制。该改性方法在晶体的轴向和径向上均匀地赋予晶体组成。该方法生产的晶体具有优异的性能和更高的收率。

3. 发明授权

US4040929A Oxygen sensor having thin film electrolyte 失效
标题翻译：氧传感器具有薄膜电解质
公开(公告)号：US4040929A
公开(公告)日：1977-08-09
申请号：US613657
申请日：1975-09-15
申请人： Carl F. Bauer , Lawrence B. Welsh , Karl J. Youtsey , Frank R. Szofran
发明人： Carl F. Bauer , Lawrence B. Welsh , Karl J. Youtsey , Frank R. Szofran
IPC分类号： G01N27/407 , G01N27/46 , G01N27/58
CPC分类号： G01N27/4071
摘要： Oxygen sensor incorporating a thin film electrolyte such as yttria stabilized zirconia sputtered onto a substrate produces an electrical signal in response to differences in oxygen partial pressures. The electrical signal changes rapidly enough for useful operation at temperatures which are substantially lower than those required by conventional oxygen sensors having a rigid, self-supporting thimble, tubular, or disc type electrolyte. For example, rapidly responding signals have been generated at temperatures below 200.degree. C whereas state of the art devices such as those used for sensing exhaust gases in automotive vehicles require temperatures higher than about 400.degree. C.
摘要翻译：掺入薄膜电解质的氧传感器，例如溅射到基板上的氧化钇稳定的氧化锆，响应于氧气分压的差异而产生电信号。在基本上低于具有刚性的自支撑套管，管状或盘式电解质的常规氧传感器所需的温度的温度下，电信号对于有用的操作变化足够快。例如，在低于200℃的温度下已经产生快速响应的信号，而诸如用于检测汽车中的废气的那些装置需要高于约400℃的温度。

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