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1. 发明申请

US20070187787A1 PIXEL SENSOR STRUCTURE INCLUDING LIGHT PIPE AND METHOD FOR FABRICATION THEREOF 审中-公开
标题翻译：像素传感器结构包括光管及其制造方法
公开(公告)号：US20070187787A1
公开(公告)日：2007-08-16
申请号：US11276160
申请日：2006-02-16
申请人： Kristin Ackerson , James Adkisson , John Ellis-Monaghan , Jeffrey Gambino , Timothy Hoague , Mark Jaffe , Robert Leidy , Matthew Moon , Richard Passel
发明人： Kristin Ackerson , James Adkisson , John Ellis-Monaghan , Jeffrey Gambino , Timothy Hoague , Mark Jaffe , Robert Leidy , Matthew Moon , Richard Passel
IPC分类号： H01L27/14
CPC分类号： H01L27/14643 , H01L27/14625 , H01L27/14632 , H01L27/14636 , H01L27/14685 , H01L27/14687 , H01L27/14689
摘要： A pixel for an image sensor includes a photosensor located within a substrate. A patterned dielectric layer having an aperture registered with the photosensor is located over the substrate. A lens structure is located over the dielectric layer and also registered with the photosensor. A liner layer is located contiguously upon a top surface of the dielectric layer, and the sidewalls and bottom of the aperture. The liner layer provides for enhanced reflection for off-axis incoming light and enhanced capture thereof by the photosensor. When the aperture does not provide a dielectric layer border for a metallization layer embedded within the dielectric layer, an exposed edge of the metallization layer may be chamfered.
摘要翻译：用于图像传感器的像素包括位于衬底内的光电传感器。具有与光电传感器对准的孔径的图案化电介质层位于衬底上。透镜结构位于电介质层上方并且还与光电传感器配准。衬垫层连续地定位在电介质层的顶表面上，孔的侧壁和底部。衬垫层为离轴入射光提供增强的反射，并且通过光电传感器增强其捕获。当孔径不为嵌入在电介质层内的金属化层提供介电层边界时，金属化层的暴露边缘可以被倒角。

2. 发明申请

US20060138480A1 A CMOS IMAGER WITH CU WIRING AND METHOD OF ELIMINATING HIGH REFLECTIVITY INTERFACES THEREFROM 有权
标题翻译：具有CU接线的CMOS成像器和消除其高反射性接口的方法
公开(公告)号：US20060138480A1
公开(公告)日：2006-06-29
申请号：US10905277
申请日：2004-12-23
申请人： James Adkisson , Jeffrey Gambino , Mark Jaffe , Robert Leidy , Richard Rassel , Anthony Stamper
发明人： James Adkisson , Jeffrey Gambino , Mark Jaffe , Robert Leidy , Richard Rassel , Anthony Stamper
IPC分类号： H01L31/113 , H01L31/0232 , H01L31/00
CPC分类号： H01L27/14636 , H01L21/76819 , H01L21/76834 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14645 , H01L27/14683
摘要： An image sensor and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack to result in a pixel array exhibiting increased light sensitivity. The image sensor includes structures having a minimum thickness of barrier layer metal that traverses the optical path of each pixel in the sensor array or, that have portions of barrier layer metal selectively removed from the optical paths of each pixel, thereby minimizing reflectance. That is, by implementing various block or single mask methodologies, portions of the barrier layer metal are completely removed at locations of the optical path for each pixel in the array. In a further embodiment, the barrier metal layer may be formed atop the Cu metallization by a self-aligned deposition.
摘要翻译：一种图像传感器和制造方法，其中传感器包括铜（Cu）金属化水平，允许结合较薄的层间电介质堆叠以产生呈现增加的光敏度的像素阵列。图像传感器包括具有穿过传感器阵列中的每个像素的光路的阻挡层金属的最小厚度的结构，或者具有从每个像素的光路中选择性地去除的阻挡层金属的部分，从而使反射率最小化。也就是说，通过实现各种块或单掩模方法，在阵列中的每个像素的光路的位置处完全去除了阻挡层金属的部分。在另一个实施例中，阻挡金属层可以通过自对准沉积形成在Cu金属化之上。

3. 发明申请

US20080073742A1 STACKED IMAGE PACKAGE 有权
标题翻译：堆叠图像包
公开(公告)号：US20080073742A1
公开(公告)日：2008-03-27
申请号：US11943277
申请日：2007-11-20
申请人： James Adkisson , Jeffrey Gambino , Mark Jaffe , Robert Leidy , Stephen Luce , Richard Rassell , Edmund Sprogis
发明人： James Adkisson , Jeffrey Gambino , Mark Jaffe , Robert Leidy , Stephen Luce , Richard Rassell , Edmund Sprogis
IPC分类号： H01L31/00 , H01L21/98
CPC分类号： H01L27/14618 , H01L25/0657 , H01L2224/13025 , H01L2224/16145 , H01L2224/16146 , H01L2224/16227 , H01L2224/17181 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/13091 , H01L2924/15151 , H01L2924/00014 , H01L2924/00
摘要： An imaging system for use in a digital camera or cell phone utilizes one chip for logic and one chip for image processing. The chips are interconnected using around-the-edge or through via conductors extending from bond pads on the active surface of the imaging chip to backside metallurgy on the imaging chip. The backside metallurgy of the imaging chip is connected to metallurgy on the active surface of the logic chip using an array of solder bumps in BGA fashion. The interconnection arrangement provides a CSP which matches the space constraints of a cell phone, for example. The arrangement also utilizes minimal wire lengths for reduced noise. Connection of the CSP to a carrier package may be either by conductive through vias or wire bonding. The CSP is such that the imaging chip may readily be mounted across an aperture in the wall of a cell phone, for example, so as to expose the light sensitive pixels on the active surface of said imaging chip to light.
摘要翻译：用于数码相机或手机的成像系统利用一个芯片用于逻辑和一个芯片用于图像处理。这些芯片使用围绕成像芯片的有源表面上的接合焊盘的边缘或通孔导体互连，从而在成像芯片上进行背面冶金。成像芯片的背面冶金采用BGA焊料凸块阵列与逻辑芯片的有源表面上的冶金连接。互连装置提供例如与手机的空间限制相匹配的CSP。该布置还利用最小的线长度来降低噪声。将CSP连接到载体封装可以通过通孔或引线键合导电。 CSP使得成像芯片可以容易地安装在例如手机的壁中的孔之间，以便将所述成像芯片的有效表面上的光敏像素曝光到光。

4. 发明申请

US20070087463A1 PIXEL SENSOR HAVING DOPED ISOLATION STRUCTURE SIDEWALL 有权
标题翻译：具有分离隔离结构的PIXEL传感器
公开(公告)号：US20070087463A1
公开(公告)日：2007-04-19
申请号：US11563531
申请日：2006-11-27
申请人： James Adkisson , Mark Jaffe , Robert Leidy
发明人： James Adkisson , Mark Jaffe , Robert Leidy
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L27/14683
摘要： A novel pixel sensor structure formed on a substrate of a first conductivity type includes a photosensitive device of a second conductivity type and a surface pinning layer of the first conductivity type. A trench isolation structure is formed adjacent to the photosensitive device pinning layer. The trench isolation structure includes a dopant region comprising material of the first conductivity type selectively formed along a sidewall of the isolation structure that is adapted to electrically couple the surface pinning layer to the underlying substrate. The corresponding method for forming the dopant region selectively formed along the sidewall of the isolation structure comprises an out-diffiusion process whereby dopant materials present in a doped material layer formed along selected portions in the trench are driven into the underlying substrate during an anneal. Alternately, or in conjunction, an angled ion implantation of dopant material in the isolation structure sidewall may be performed by first fabricating a photoresist layer and reducing its size by removing a comer, or a comer portion thereof, which may block the angled implant material.
摘要翻译：形成在第一导电类型的衬底上的新型像素传感器结构包括第二导电类型的光敏器件和第一导电类型的表面钉扎层。在光敏器件钉扎层附近形成沟槽隔离结构。沟槽隔离结构包括掺杂区域，该掺杂剂区域包括沿着隔离结构的侧壁选择性地形成的第一导电类型的材料，其适于将表面钉扎层电耦合到下面的衬底。用于形成沿着隔离结构的侧壁选择性地形成的掺杂剂区域的相应方法包括外扩散过程，由此在退火期间，存在于沿着沟槽中的选定部分形成的掺杂材料层中的掺杂剂材料被驱动到下面的衬底中。可替代地或结合地，隔离结构侧壁中的掺杂剂材料的成角度的离子注入可以通过首先制造光致抗蚀剂层并通过去除可能阻挡成角度的植入材料的角部或其拐角部分来减小其尺寸来执行。

5. 发明申请

US20060261427A1 Touching microlens structure for a pixel sensor and method of fabrication 有权
标题翻译：用于像素传感器的触摸微透镜结构和制造方法
公开(公告)号：US20060261427A1
公开(公告)日：2006-11-23
申请号：US11378020
申请日：2006-03-17
申请人： John Dillon , Timothy Hoague , Robert Leidy
发明人： John Dillon , Timothy Hoague , Robert Leidy
IPC分类号： H01L31/0232
CPC分类号： H01L27/14685 , H01L27/14627 , H01L31/02327
摘要： A structure and method for increasing the sensitivity of pixel sensors by eliminating a gap space formed between adjacent microlens structures in a pixel sensor array. Advantageously, exposure and flowing conditions are such that adjacent microlens structures touch (are webbed) at a horizontal cross-section, yet have a round lens shape in all directions. Particularly, exposure and flowing conditions are such that each touching microlens structure is formed to have a matched uniform radius of curvature at a horizontal cross-section and at a 45 degree cross-sections. To improve quality of mircrolens structure uniformity exhibited at all pixel locations including those near a pixel array edge or corner, a top anti-reflective coating layer is applied on top of a photoresist layer prior to the exposure and flowing steps.
摘要翻译：通过消除在像素传感器阵列中相邻的微透镜结构之间形成的间隙空间来增加像素传感器的灵敏度的结构和方法。有利地，曝光和流动条件使得相邻的微透镜结构以水平横截面接触（被蹼状），但在所有方向上具有圆形透镜形状。特别地，曝光和流动条件使得每个触摸的微透镜结构形成为在水平横截面和45度横截面处具有匹配的均匀的曲率半径。为了提高在包括像素阵列边缘或角落附近的像素位置的所有像素位置处显示的微电极结构均匀性的质量，在曝光和流动步骤之前，将顶部抗反射涂层施加在光致抗蚀剂层的顶部。

6. 发明申请

US20060261426A1 A TOUCHING MICROLENS STRUCTURE FOR A PIXEL SENSOR AND METHOD OF FABRICATION 有权
标题翻译：用于像素传感器的触摸式微型结构和制造方法
公开(公告)号：US20060261426A1
公开(公告)日：2006-11-23
申请号：US10908601
申请日：2005-05-18
申请人： Timothy Hoague , Robert Leidy
发明人： Timothy Hoague , Robert Leidy
IPC分类号： H01L31/0232 , G03F7/20
CPC分类号： H01L27/14685 , H01L27/14627 , H01L31/02327
摘要： A structure and method for increasing the sensitivity of pixel sensors by eliminating a gap space formed between adjacent microlens structures in a pixel sensor array. Advantageously, exposure and flowing conditions are such that adjacent microlens structures touch (are webbed) at a horizontal cross-section, yet have a round lens shape in all directions. Particularly, exposure and flowing conditions are such that each touching microlens structure is formed to have a matched uniform radius of curvature at a horizontal cross-section and at a 45 degree cross-sections.
摘要翻译：通过消除在像素传感器阵列中相邻的微透镜结构之间形成的间隙空间来增加像素传感器的灵敏度的结构和方法。有利地，曝光和流动条件使得相邻的微透镜结构以水平横截面接触（被蹼状），但在所有方向上具有圆形透镜形状。特别地，曝光和流动条件使得每个触摸的微透镜结构形成为在水平横截面和45度横截面处具有匹配的均匀的曲率半径。

7. 发明申请

US20070138380A1 FUNNELED LIGHT PIPE FOR PIXEL SENSORS 有权
标题翻译：用于像素传感器的FUNNELED LIGHT PIPE
公开(公告)号：US20070138380A1
公开(公告)日：2007-06-21
申请号：US11275171
申请日：2005-12-16
申请人： James Adkisson , Jeffrey Gambino , Robert Leidy , Richard Rassel
发明人： James Adkisson , Jeffrey Gambino , Robert Leidy , Richard Rassel
IPC分类号： G01J1/04
CPC分类号： G01J1/04 , G01J1/0407 , G01J1/0422 , G01J1/0488
摘要： A photo sensing structure and methods for forming the same. The structure includes (a) a semiconductor substrate and (b) a photo collection region on the semiconductor substrate. The structure also includes a funneled light pipe on top of the photo collection region. The funneled light pipe includes (i) a bottom cylindrical portion on top of the photo collection region of the photo collection region, and (ii) a funneled portion which has a tapered shape and is on top and in direct physical contact with the bottom cylindrical portion. The structure further includes a color filter region on top of the funneled light pipe.
摘要翻译：感光结构及其形成方法。该结构包括（a）半导体衬底和（b）半导体衬底上的光收集区域。该结构还包括在照片收集区域顶部的漏斗光管。漏斗式光管包括（i）照片收集区域的照片收集区域顶部的底部圆柱形部分，和（ii）具有锥形形状并且在顶部并与底部圆柱体直接物理接触的漏斗部分一部分。该结构还包括在漏斗的光管的顶部上的滤色器区域。

8. 发明申请

US20060204859A1 AN EXTRA DOSE TRIM MASK, METHOD OF MANUFACTURE, AND LITHOGRAPHIC PROCESS USING THE SAME 审中-公开
标题翻译：一种额外的剂量仿真面膜，制造方法和使用其的平版印刷方法
公开(公告)号：US20060204859A1
公开(公告)日：2006-09-14
申请号：US10906846
申请日：2005-03-09
申请人： Robert Leidy , Charles Parrish , Jed Rankin , David Shanks , Charles Whiting
发明人： Robert Leidy , Charles Parrish , Jed Rankin , David Shanks , Charles Whiting
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F7/70466 , G03F1/70
摘要： A mask structure and photolithographic method using the same for obtaining shorter and thinner line or feature lengths for optimizing power consumption and performance in semiconductor devices. According to a first aspect, a method for enabling trimming of semiconductor linewidth dimensions implements an extra dose trim mask. The lithographic method using the extra dose trim mask to make small adjustments to patterned linewidth exposures for enhanced CD control may be used to trim or adjust whole or a plurality of regions of a lithographic exposure. There is additionally provided a structure and method of creating a lithographic dual exposure mask having one or more regions comprising one or more partial energy absorptive layers such that, when subject to a blanket dose, enable smaller image size adjustments in those regions. The method using a dual exposure trim mask having multiple attenuator regions facilitates product/process tuning as multiple trim doses may be delivered to different regions of an exposure field resulting in different image size adjustments.
摘要翻译：一种掩模结构和光刻方法，用于获得更短和更薄的线或特征长度，以优化半导体器件的功耗和性能。根据第一方面，一种能够修剪半导体线宽尺寸的方法实现了额外的剂量修剪掩模。可以使用使用额外剂量调整掩模对图案化线宽曝光进行小调整以增强CD控制的光刻方法来修整或调整光刻曝光的整个或多个区域。还提供了一种创建具有包括一个或多个部分能量吸收层的一个或多个区域的光刻双曝光掩模的结构和方法，使得当经受覆盖剂量时，能够实现在那些区域中更小的图像尺寸调整。使用具有多个衰减器区域的双曝光修剪掩模的方法有助于产品/过程调谐，因为多个修整剂量可以被传递到曝光场的不同区域，导致不同的图像尺寸调整。

9. 发明申请

US20060128126A1 MASKED SIDEWALL IMPLANT FOR IMAGE SENSOR 有权
标题翻译：用于图像传感器的嵌入式平板植入体
公开(公告)号：US20060128126A1
公开(公告)日：2006-06-15
申请号：US10905043
申请日：2004-12-13
申请人： James Adkisson , Mark Jaffe , Arthur Johnson , Robert Leidy , Jeffrey Maling
发明人： James Adkisson , Mark Jaffe , Arthur Johnson , Robert Leidy , Jeffrey Maling
IPC分类号： H01L21/425
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14687 , H01L27/14689
摘要： A novel image sensor structure formed on a substrate of a first conductivity type includes a photosensitive device of a second conductivity type and a surface pinning layer of the first conductivity type. A trench isolation region is formed adjacent to the photosensitive device pinning layer. The structure includes a dopant region comprising material of the first conductivity type formed along a sidewall of the isolation region that is adapted to electrically couple the pinning layer to the substrate. The corresponding method facilitates an angled ion implantation of dopant material in the isolation region sidewall by first fabricating the photoresist layer and reducing its size by removing a corner, or a corner portion thereof, which may block the angled implant material. To facilitate the angled implant to the sidewall edge past resist block masks, two methods are proposed: 1) a spacer type etch of the imaged photoresist; or, 2) a corner sputter process of the imaged photoresist.
摘要翻译：形成在第一导电类型的衬底上的新型图像传感器结构包括第二导电类型的光敏器件和第一导电类型的表面钉扎层。在光敏器件钉扎层附近形成沟槽隔离区域。该结构包括掺杂区域，该掺杂剂区域包括沿着隔离区域的侧壁形成的第一导电类型的材料，其适于将钉扎层电耦合到衬底。相应的方法通过首先制造光致抗蚀剂层并且通过去除可能阻挡成角度的植入材料的角部或其角部来减小其尺寸来促进掺杂剂材料在隔离区域侧壁中的成角度的离子注入。为了促进通过抗蚀剂阻挡掩模的侧壁边缘的成角度注入，提出了两种方法：1）成像光致抗蚀剂的间隔物型蚀刻; 或2）成像光致抗蚀剂的角溅射工艺。

10. 发明申请

US20060113622A1 A DAMASCENE COPPER WIRING IMAGE SENSOR 有权
标题翻译： DAMASCENE铜接线图像传感器
公开(公告)号：US20060113622A1
公开(公告)日：2006-06-01
申请号：US10904807
申请日：2004-11-30
申请人： James Adkisson , Jeffrey Gambino , Mark Jaffe , Robert Leidy , Anthony Stamper
发明人： James Adkisson , Jeffrey Gambino , Mark Jaffe , Robert Leidy , Anthony Stamper
IPC分类号： H01L31/00
CPC分类号： H01L27/14685 , H01L21/76819 , H01L21/76834 , H01L21/76838 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14687
摘要： An image sensor array and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack with improved thickness uniformity to result in a pixel array exhibiting increased light sensitivity. In the sensor array, each Cu metallization level includes a Cu metal wire structure formed at locations between each array pixel and, a barrier material layer is formed on top each Cu metal wire structure that traverses the pixel optical path. By implementing a single mask or self-aligned mask methodology, a single etch is conducted to completely remove the interlevel dielectric and barrier layers that traverse the optical path. The etched opening is then refilled with dielectric material. Prior to depositing the refill dielectric, a layer of either reflective or absorptive material is formed along the sidewalls of the etched opening to improve sensitivity of the pixels by either reflecting light to the underlying photodiode or by eliminating light reflections.
摘要翻译：一种图像传感器阵列和制造方法，其中传感器包括铜（Cu）金属化水平，允许结合更薄的层间电介质叠层，改进的厚度均匀性，以产生呈现增加的光敏度的像素阵列。在传感器阵列中，每个Cu金属化层包括在每个阵列像素之间的位置处形成的Cu金属线结构，并且阻挡材料层形成在穿过像素光路的每个Cu金属线结构上。通过实现单掩模或自对准掩模方法，进行单次蚀刻以完全去除穿过光路的层间电介质层和阻挡层。然后将蚀刻的开口用电介质材料重新填充。在沉积再充填电介质之前，沿蚀刻开口的侧壁形成反射或吸收材料层，以通过将光反射到下面的光电二极管或通过消除光反射来提高像素的灵敏度。

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