会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • AN EXTRA DOSE TRIM MASK, METHOD OF MANUFACTURE, AND LITHOGRAPHIC PROCESS USING THE SAME
    • 一种额外的剂量仿真面膜,制造方法和使用其的平版印刷方法
    • US20060204859A1
    • 2006-09-14
    • US10906846
    • 2005-03-09
    • Robert LeidyCharles ParrishJed RankinDavid ShanksCharles Whiting
    • Robert LeidyCharles ParrishJed RankinDavid ShanksCharles Whiting
    • G03C5/00G03F1/00
    • G03F7/70466G03F1/70
    • A mask structure and photolithographic method using the same for obtaining shorter and thinner line or feature lengths for optimizing power consumption and performance in semiconductor devices. According to a first aspect, a method for enabling trimming of semiconductor linewidth dimensions implements an extra dose trim mask. The lithographic method using the extra dose trim mask to make small adjustments to patterned linewidth exposures for enhanced CD control may be used to trim or adjust whole or a plurality of regions of a lithographic exposure. There is additionally provided a structure and method of creating a lithographic dual exposure mask having one or more regions comprising one or more partial energy absorptive layers such that, when subject to a blanket dose, enable smaller image size adjustments in those regions. The method using a dual exposure trim mask having multiple attenuator regions facilitates product/process tuning as multiple trim doses may be delivered to different regions of an exposure field resulting in different image size adjustments.
    • 一种掩模结构和光刻方法,用于获得更短和更薄的线或特征长度,以优化半导体器件的功耗和性能。 根据第一方面,一种能够修剪半导体线宽尺寸的方法实现了额外的剂量修剪掩模。 可以使用使用额外剂量调整掩模对图案化线宽曝光进行小调整以增强CD控制的光刻方法来修整或调整光刻曝光的整个或多个区域。 还提供了一种创建具有包括一个或多个部分能量吸收层的一个或多个区域的光刻双曝光掩模的结构和方法,使得当经受覆盖剂量时,能够实现在那些区域中更小的图像尺寸调整。 使用具有多个衰减器区域的双曝光修剪掩模的方法有助于产品/过程调谐,因为多个修整剂量可以被传递到曝光场的不同区域,导致不同的图像尺寸调整。