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    • 3. 发明授权
    • Gas distribution apparatus for semiconductor processing
    • 用于半导体加工的气体分配装置
    • US06508913B2
    • 2003-01-21
    • US09983680
    • 2001-10-25
    • Brian K. McMillinRobert Knop
    • Brian K. McMillinRobert Knop
    • C23F100
    • H01L21/67253C23F4/00G05D11/132H01L21/67017H01L21/67069Y10S438/935
    • A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines.
    • 用于处理半导体衬底的气体分配系统包括多个气体供应,其中来自多个气体源的气体混合在一起的混合歧管,将混合气体输送到室中的不同区域的多个气体供应管线,以及 控制阀。 气体供应管线包括将混合气体输送到室中的第一区域的第一气体供应管线和将混合气体输送到室中的第二区域的第二气体供应管线。 控制阀控制第一和/或第二气体供给管线中的混合气体的流量,使得在第一和第二气体供应管线中实现混合气体的所需流量比。
    • 4. 发明授权
    • Gas distribution apparatus for semiconductor processing
    • 用于半导体加工的气体分配装置
    • US06333272B1
    • 2001-12-25
    • US09680319
    • 2000-10-06
    • Brian K. McMillinRobert Knop
    • Brian K. McMillinRobert Knop
    • H01L21302
    • H01L21/67253C23F4/00G05D11/132H01L21/67017H01L21/67069Y10S438/935
    • A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines. In a method of using the apparatus, a semiconductor substrate is supplied to the reaction chamber and the substrate is processed by supplying the mixed gas to the first and second zones, the control valve being adjusted such that a rate of flow of the mixed gas in the first and/or second gas supply line provides a desired ratio of flow rates of the mixed gas in the first and second zones.
    • 用于处理半导体衬底的气体分配系统包括多个气体供应,其中来自多个气体源的气体混合在一起的混合歧管,将混合气体输送到室中的不同区域的多个气体供应管线,以及 控制阀。 气体供应管线包括将混合气体输送到室中的第一区域的第一气体供应管线和将混合气体输送到室中的第二区域的第二气体供应管线。 控制阀控制第一和/或第二气体供给管线中的混合气体的流量,使得在第一和第二气体供应管线中实现混合气体的所需流量比。 在使用该装置的方法中,将半导体基板供给到反应室,并且通过将混合气体供给到第一和第二区域来处理基板,调节控制阀使得混合气体的流量 第一和/或第二气体供应管线提供混合气体在第一和第二区域中的期望流量比。