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1. 发明授权

US09530688B2 Directed self assembly of block copolymers to form vias aligned with interconnects 有权
公开(公告)号：US09530688B2
公开(公告)日：2016-12-27
申请号：US14822865
申请日：2015-08-10
申请人： Paul A. Nyhus , Swaminathan Sivakumar , Robert Bristol
发明人： Paul A. Nyhus , Swaminathan Sivakumar , Robert Bristol
IPC分类号： H01L21/4763 , H01L21/768 , H01L23/522 , H01L21/033 , H01L21/311
CPC分类号： H01L21/76877 , H01L21/0337 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A method of an aspect includes forming an interconnect line etch opening in a hardmask layer. The hardmask layer is over a dielectric layer that has an interconnect line disposed therein. The interconnect line etch opening is formed aligned over the interconnect line. A block copolymer is introduced into the interconnect line etch opening. The block copolymer is assembled to form a plurality of assembled structures that are spaced along a length of the interconnect line etch opening. An assembled structure is directly aligned over the interconnect line that is disposed within the dielectric layer.

2. 发明申请

US20070235666A1 Plasma-Based Debris Mitigation for Extreme Ultraviolet (EUV) Light Source 有权
标题翻译：极端紫外线（EUV）光源基于等离子体的碎片减轻
公开(公告)号：US20070235666A1
公开(公告)日：2007-10-11
申请号：US11762011
申请日：2007-06-12
申请人： David Ruzic , Robert Bristol , Bryan Rice
发明人： David Ruzic , Robert Bristol , Bryan Rice
IPC分类号： H01J35/00
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70166 , G03F7/70916 , H01J37/321 , H01J2237/022 , H05G2/001
摘要： A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.
摘要翻译：极紫外（EUV）光刻系统中的光源室可以包括用于离子化由光源产生的碎屑颗粒的二次等离子体和箔陷阱以捕获电离粒子，以避免腔室中的收集器光学元件的污染。

3. 发明申请

US20060216912A1 Methods to manufacture contaminant-gettering materials in the surface of EUV optics 有权
标题翻译：在EUV光学表面制造污染物吸收材料的方法
公开(公告)号：US20060216912A1
公开(公告)日：2006-09-28
申请号：US11092167
申请日：2005-03-28
申请人： Robert Bristol , Bruce Billett
发明人： Robert Bristol , Bruce Billett
IPC分类号： H05H1/00 , H01J35/00 , H01L21/322
CPC分类号： G21K1/06 , G21K2201/067
摘要： Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposited on an optical coating on the optical element. Trenches are formed in the optical coating. The gettering agent is formed into the trenches over the photoresist. Next, the photoresist is removed from the optical coating to expose the gettering agent in the trenches. For another embodiment, patches of a nanotube forest having a gettering agent are formed in designated areas of an optical element. The gettering agent of the patches may be a plurality of carbon nanotubes. The optical coating is formed on a substrate between patches of the gettering agent.
摘要翻译：本文描述了在EUV光学器件的表面中制造污染物吸收材料的方法。对光学元件进行图案化，并且在光学元件的表面上形成污染物吸收材料。在一个实施例中，光致抗蚀剂沉积在光学元件上的光学涂层上。在光学涂层中形成沟槽。吸光剂形成在光致抗蚀剂上的沟槽中。接下来，从光学涂层去除光致抗蚀剂以暴露沟槽中的吸杂剂。对于另一个实施例，在光学元件的指定区域中形成具有吸气剂的纳米管森林的贴片。补片的吸气剂可以是多个碳纳米管。该光学涂层形成在吸气剂的贴片之间的衬底上。

4. 发明申请

US20060093972A1 Active hardmask for lithographic patterning 失效
公开(公告)号：US20060093972A1
公开(公告)日：2006-05-04
申请号：US11293594
申请日：2005-12-02
申请人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan Rice
发明人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan Rice
IPC分类号： G03F7/00
CPC分类号： G03F7/091 , G03F7/11
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.

5. 发明授权

US07033739B2 Active hardmask for lithographic patterning 失效
公开(公告)号：US07033739B2
公开(公告)日：2006-04-25
申请号：US10423466
申请日：2003-04-24
申请人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan J. Rice
发明人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan J. Rice
IPC分类号： G03F7/20
CPC分类号： G03F7/091 , G03F7/11
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.

6. 发明授权

US09153477B2 Directed self assembly of block copolymers to form vias aligned with interconnects 有权
标题翻译：嵌段共聚物的定向自组装形成与互连对准的通孔
公开(公告)号：US09153477B2
公开(公告)日：2015-10-06
申请号：US13631197
申请日：2012-09-28
申请人： Paul A. Nyhus , Swaninathan Sivakumar , Robert Bristol
发明人： Paul A. Nyhus , Swaninathan Sivakumar , Robert Bristol
IPC分类号： H01L21/768 , H01L21/033 , H01L21/311 , H01L23/522
CPC分类号： H01L21/76877 , H01L21/0337 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A method of an aspect includes forming an interconnect line etch opening in a hardmask layer. The hardmask layer is over a dielectric layer that has an interconnect line disposed therein. The interconnect line etch opening is formed aligned over the interconnect line. A block copolymer is introduced into the interconnect line etch opening. The block copolymer is assembled to form a plurality of assembled structures that are spaced along a length of the interconnect line etch opening. An assembled structure is directly aligned over the interconnect line that is disposed within the dielectric layer.
摘要翻译：一方面的方法包括在硬掩模层中形成互连线蚀刻开口。硬掩模层位于其中布置有互连线的电介质层上。互连线蚀刻开口在互连线上形成对准。将嵌段共聚物引入到互连线蚀刻开口中。嵌段共聚物被组装以形成沿着互连线蚀刻开口的长度间隔开的多个组装结构。组装的结构在设置在电介质层内的互连线上直接对准。

7. 发明授权

US07567379B2 Technique to prevent tin contamination of mirrors and electrodes in an EUV lithography system 有权
标题翻译：防止EUV光刻系统中反射镜和电极的锡污染的技术
公开(公告)号：US07567379B2
公开(公告)日：2009-07-28
申请号：US10835867
申请日：2004-04-29
申请人： Robert Bristol , Bryan J. Rice , Ming Fang , John P. Barnak , Melissa Shell
发明人： Robert Bristol , Bryan J. Rice , Ming Fang , John P. Barnak , Melissa Shell
IPC分类号： F21V9/04
CPC分类号： G03F7/70958 , C23C14/083 , C23C14/165 , G03F7/70175 , G03F7/70916 , G21K1/06 , G21K2201/067
摘要： Passivation coatings and gettering agents may be used in an Extreme Ultraviolet (EUV) source which uses tin (Sn) vapor as a plasma “fuel” to prevent contamination and corresponding loss of reflectivity due to tin contamination. The passivation coating may be a material to which tin does not adhere, and may be placed on reflective surfaces in the source chamber. The gettering agent may be a material that reacts strongly with tin, and may be placed outside of the collector mirrors and/or on non-reflective surfaces. A passivation coating may also be provided on the insulator between the anode and cathode of the source electrodes to prevent shorting due to tin coating the insulator surface.
摘要翻译：钝化涂层和吸气剂可以用于使用锡（Sn）蒸气作为等离子体“燃料”的极紫外（EUV）源，以防止污染和相应的锡污染引起的反射率的损失。钝化涂层可以是锡不粘附的材料，并且可以放置在源室中的反射表面上。吸气剂可以是与锡强烈反应的材料，并且可以放置在集电镜和/或非反射表面之外。也可以在源电极的阳极和阴极之间的绝缘体上提供钝化涂层，以防止由于涂覆绝缘体表面的锡而导致短路。

8. 发明授权

US07413586B2 In-tool and out-of-tool protection of extreme ultraviolet (EUV) reticles 有权
标题翻译：极紫外（EUV）光罩的工具和工具外保护
公开(公告)号：US07413586B2
公开(公告)日：2008-08-19
申请号：US10789670
申请日：2004-02-27
申请人： Arun Ramamoorthy , Robert Bristol
发明人： Arun Ramamoorthy , Robert Bristol
IPC分类号： F26B7/00 , G03B27/58 , G03B27/42 , B65D85/48 , G03F9/00 , A47L13/15 , D02G3/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/62 , G03F1/66 , G03F7/70741 , G03F7/70916
摘要： A reticle carrier for an Extreme Ultraviolet (EUV) reticle may include nested grids of electret fibers to provide active protection from contamination without a power supply. The reticle carrier may include in-line sensors for in-situ monitoring of contamination. Grids of electret fibers may also be used in an EUV pellicle.
摘要翻译：用于极紫外（EUV）掩模版的掩模版载体可以包括驻极体纤维的嵌套栅格，以在没有电源的情况下提供主动防止污染。标线载体可以包括用于原位监测污染物的在线传感器。驻极体纤维网格也可用于EUV防护薄膜。

9. 发明授权

US07230258B2 Plasma-based debris mitigation for extreme ultraviolet (EUV) light source 有权
标题翻译：用于极紫外（EUV）光源的等离子体碎片减轻
公开(公告)号：US07230258B2
公开(公告)日：2007-06-12
申请号：US10628129
申请日：2003-07-24
申请人： David Ruzic , Robert Bristol , Bryan J. Rice
发明人： David Ruzic , Robert Bristol , Bryan J. Rice
IPC分类号： G01J3/10 , H05G2/00
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70166 , G03F7/70916 , H01J37/321 , H01J2237/022 , H05G2/001
摘要： A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.
摘要翻译：极紫外（EUV）光刻系统中的光源室可以包括用于离子化由光源产生的碎屑颗粒的二次等离子体和箔陷阱以捕获电离粒子，以避免腔室中的收集器光学元件的污染。

10. 发明申请

US20060000985A1 Optics for extreme ultraviolet lithography 失效
标题翻译：极光紫外光刻光学
公开(公告)号：US20060000985A1
公开(公告)日：2006-01-05
申请号：US10883048
申请日：2004-06-30
申请人： Manish Chandhok , Bryan Rice , Robert Bristol
发明人： Manish Chandhok , Bryan Rice , Robert Bristol
IPC分类号： G03F7/20
CPC分类号： G03F7/70175 , G03F7/70033 , G21K1/06
摘要： According to an embodiment of the invention, extreme ultraviolet (EUV) photolithography is performed using lobster eye transmission optics. A light source, such as a source plasma, is located at the center of a circle. Several mirror segments are arranged on an arc of the circle. The mirror segments may be arranged so that the light generated by the light source is collimated after being reflected. The light source may be a source plasma capable of generating EUV photons.
摘要翻译：根据本发明的实施例，使用龙虾眼传输光学器件执行极紫外（EUV）光刻。诸如源等离子体的光源位于圆的中心。圆弧上设有几个镜片段。镜片段可以被布置成使得由光源产生的光在被反射之后被准直。光源可以是能够产生EUV光子的源等离子体。

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