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    • 1. 发明授权
    • Recovery of gadolinium and gallium oxides
    • 回收钆和氧化镓
    • US4375453A
    • 1983-03-01
    • US334719
    • 1981-12-28
    • David NalewajekEugene B. ReclaRobert A. WilesRichard E. Eibeck
    • David NalewajekEugene B. ReclaRobert A. WilesRichard E. Eibeck
    • C01F17/00C01G15/00
    • C01F17/0081C01F17/0012C01F17/0043C01G15/00C01P2004/61C01P2006/80
    • Gd.sub.2 O.sub.3 and Ga.sub.2 O.sub.3 are currently used for the fabrication of Gd.sub.3 Ga.sub.5 O.sub.12 (GGG) wafers which are employed as substrates for bubble domain memory devices. In the processing, in the order of 25% of the starting material ends up as process "saw kerf" contaminated with variable amounts of iron, nickel, magnesium, aluminum, zirconium, iridium and silicon. A process is described whereby the "saw kerf" can be reprocessed in sufficient purity to be re-used in the process, thereby improving the economics of production of GGG wafers significantly. Gadolinium and gallium oxides are recovered and separated from transition metal impurities introduced during fabrication of GGG wafers. The process "saw kerf" produced from slicing the crystal boule is dissolved in HCl, treated with H.sub.2 SO.sub.4, and the resulting sulfates separated. Metathesis with (NH.sub.4).sub.2 C.sub.2 O.sub.4 results in conversion of the sulfates to the ammonium oxalates which were calcined at 850.degree. C. to form Ga.sub.2 O.sub.3 and Gd.sub.2 O.sub.3 of purity >99.99%. The process can be extended to include purification and re-use of by-products generated in other grinding and polishing operations which may result in the recycling of the order of 80% of the generated by-products.
    • Gd2O3和Ga2O3目前用于制造用作气泡域记忆装置底物的Gd 3 Ga 5 O 12(GGG)晶片。 在加工过程中,以可变量的铁,镍,镁,铝,锆,铱和硅污染的工艺“锯切”为起始原料的25%。 描述了一种方法,其中“锯切”可以以足够的纯度重新加工以在该过程中重新使用,从而显着提高了GGG晶片的生产经济性。 钆和镓氧化物被回收并与制造GGG晶片期间引入的过渡金属杂质分离。 将从晶体棒上切下的方法“锯切”溶解在HCl中,用H 2 SO 4处理,所得到的硫酸盐分离。 (NH 4)2 C 2 O 4的复分解导致硫酸盐转化成草酸铵,其在850℃下煅烧以形成纯度> 99.99%的Ga 2 O 3和Gd 2 O 3。 该方法可以扩展到包括在其它研磨和抛光操作中产生的副产物的纯化和再利用,这可能导致生成的副产物的80%的量级的再循环。