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1. 发明申请

US20080050677A1 Processing method, manufacturing method of semiconductor device, and processing apparatus 审中-公开
标题翻译：半导体装置的加工方法，制造方法以及加工装置
公开(公告)号：US20080050677A1
公开(公告)日：2008-02-28
申请号：US11905976
申请日：2007-10-05
申请人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
发明人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
IPC分类号： G03C5/00
CPC分类号： H01L23/544 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2103/172 , G03F7/2026 , G03F7/70341 , G03F9/7076 , G03F9/708 , G03F9/7084 , G21K5/10 , H01J2237/30438 , H01L2223/54453 , H01L2924/0002 , Y10S438/949 , H01L2924/00
摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.
摘要翻译：一种处理方法，用于在形成在基板上的膜中选择性地减少或去除待曝光的区域，该方法包括相对地扫描基板上的形状比整个第一区域要暴露的整个第一区域的第一曝光灯区域，以选择性地去除或减少要暴露的第一区域，并且用第二曝光光将待暴露的整个第一区域暴露在整个第一区域内的整个第二区域，以选择性地暴露待暴露的整个第二区域。

2. 发明授权

US07067033B2 Chemical liquid processing apparatus for processing a substrate 失效
标题翻译：用于处理基板的化学液处理装置
公开(公告)号：US07067033B2
公开(公告)日：2006-06-27
申请号：US10775251
申请日：2004-02-11
申请人： Shinichi Ito , Riichiro Takahashi , Tatsuhiko Ema , Katsuya Okamura
发明人： Shinichi Ito , Riichiro Takahashi , Tatsuhiko Ema , Katsuya Okamura
IPC分类号： C23F1/00
CPC分类号： H01L21/67034 , B05C11/06 , B05C11/08 , B05D1/005 , B05D3/0406 , H01L21/6708 , Y10S134/902 , Y10S438/906
摘要： In this disclosure, air flow is formed above chemical liquid film and a move of the chemical liquid is generated by making the air flow into a contact with the surface of chemical liquid. Further, a negative pressure is generated in a space between a processing object substrate and a plate by rotating the plate. Consequently, uniformity of processing of chemical liquid is improved, so that liquid removing step can be carried out effectively. As a result, yield rate of chemical liquid treatment can be improved.
摘要翻译：在本公开中，在化学液膜上方形成空气流，并且通过使空气流与化学液体的表面接触而产生化学液体的移动。此外，通过旋转板在处理对象基板和板之间的空间中产生负压。因此，提高了液体的处理均匀性，能够有效地进行液体除去工序。结果，可以提高化学液体处理的产率。

3. 发明授权

US06842281B2 Observation device, ultraviolet microscope and observation method 有权
标题翻译：观察装置，紫外线显微镜及观察方法
公开(公告)号：US06842281B2
公开(公告)日：2005-01-11
申请号：US10133626
申请日：2002-04-29
申请人： Atsushi Tsurumune , Jiro Mizuno , Shinichi Ito , Riichiro Takahashi , Tatsuhiko Ema
发明人： Atsushi Tsurumune , Jiro Mizuno , Shinichi Ito , Riichiro Takahashi , Tatsuhiko Ema
IPC分类号： G02B21/00 , G02B21/16 , G02B21/26 , G02B21/36 , G02B11/04
CPC分类号： G02B21/16
摘要： An ultraviolet microscope comprises an observation device which observes a specimen with ultraviolet light; a gas supply device which, during the observation with ultraviolet light, supplies an inert gas to surroundings of the specimen; and a timing control device which controls supply timing of the inert gas by the gas supply device, and the timing control device controls the gas supply device so as to cause preliminary supply of the inert gas before the observation of the specimen with ultraviolet light, and also so as to cause regular supply of the inert gas at least during the observation of the specimen with ultraviolet light.
摘要翻译：紫外线显微镜包括用紫外线观察样品的观察装置; 在紫外线观察期间，向样本周围供给惰性气体的气体供给装置; 以及定时控制装置，其通过气体供给装置控制惰性气体的供给定时，并且定时控制装置控制气体供给装置，以便在用紫外线观察样品之前使惰性气体预先供应，以及也可以至少在用紫外线观察试样时使惰性气体定期供给。

4. 发明授权

US06818387B2 Method of forming a pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US06818387B2
公开(公告)日：2004-11-16
申请号：US10075619
申请日：2002-02-15
申请人： Riichiro Takahashi , Kei Hayasaki , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F726
CPC分类号： G03F7/322 , G03F7/38
摘要： There is disclosed, as an aspect, a method of forming a pattern which comprising coating a photosensitive resist film on a surface of substrate, subjecting the photosensitive resist film to an exposure process, coating an oxidizing liquid having an oxidative effect on a surface of the photosensitive resist film that has been subjected to the exposure process to thereby perform a pretreatment wherein the surface of the resist film is caused to oxidize by the oxidizing liquid to form an oxide layer thereon, feeding a developing solution to the photosensitive resist film whose surface has been oxidized to thereby perform a development of the resist film, and feeding a rinsing solution to a surface of the substrate to wash the substrate.
摘要翻译：作为一个方面，公开了一种形成图案的方法，该方法包括在基材表面上涂布光敏抗蚀剂膜，对感光性抗蚀剂膜进行曝光处理，在其表面上涂布具有氧化作用的氧化液体已经进行了曝光处理的光敏抗蚀剂膜，由此进行预处理，其中使抗氧化膜的表面被氧化液体氧化以在其上形成氧化物层，将显影液供给到表面具有的光敏抗蚀剂膜被氧化，从而进行抗蚀剂膜的显影，并将漂洗溶液供给到基板的表面以洗涤基板。

5. 发明授权

US07727853B2 Processing method, manufacturing method of semiconductor device, and processing apparatus 失效
标题翻译：半导体装置的加工方法，制造方法以及加工装置
公开(公告)号：US07727853B2
公开(公告)日：2010-06-01
申请号：US12216228
申请日：2008-07-01
申请人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
发明人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
IPC分类号： H01L21/76
CPC分类号： H01L23/544 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2103/172 , G03F7/2026 , G03F7/70341 , G03F9/7076 , G03F9/708 , G03F9/7084 , G21K5/10 , H01J2237/30438 , H01L2223/54453 , H01L2924/0002 , Y10S438/949 , H01L2924/00
摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.
摘要翻译：一种处理方法，用于在形成在基板上的膜中选择性地减少或去除待曝光的区域，该方法包括相对地扫描基板上的形状比整个第一区域要暴露的整个第一区域的第一曝光灯区域，以选择性地去除或减少要暴露的第一区域，并且用第二曝光光将待暴露的整个第一区域暴露在整个第一区域内的整个第二区域，以选择性地暴露待暴露的整个第二区域。

6. 发明申请

US20070037099A1 Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method 失效
标题翻译：碱溶液及其制造方法，碱性溶液应用于图案形成方法，抗蚀膜除去方法，溶液施加方法，基板处理方法，溶液供给方法和半导体器件制造方法
公开(公告)号：US20070037099A1
公开(公告)日：2007-02-15
申请号：US11493629
申请日：2006-07-27
申请人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： G03C5/00
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.
摘要翻译：一种碱性溶液的制造方法，包括将具有氧化性质或还原性的气态分子溶解在碱性水溶液中。

7. 发明申请

US20100104988A1 SUBSTRATE TREATING METHOD, SUBSTRATE-PROCESSING APPARATUS, DEVELOPING METHOD, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND METHOD OF CLEANING A DEVELOPING SOLUTION NOZZLE 审中-公开
标题翻译：基板处理方法，基板处理装置，开发方法，制造半导体器件的方法和清洁发展中的解决方案喷嘴的方法
公开(公告)号：US20100104988A1
公开(公告)日：2010-04-29
申请号：US12651062
申请日：2009-12-31
申请人： Kei HAYASAKI , Shinichi ITO , Tatsuhiko EMA , Riichiro TAKAHASHI
发明人： Kei HAYASAKI , Shinichi ITO , Tatsuhiko EMA , Riichiro TAKAHASHI
IPC分类号： G03F7/40
CPC分类号： G03F7/3021 , H01L21/31133 , Y10S134/902
摘要： There is disclosed a developing method of developing a photo-sensitive resist film in which a desired pattern is exposed, including subjecting the exposed photosensitive resist film to a first developing treatment; supplying a cleaning solution having an oxidizing property or alkalinity with respect to the surface of the resist film to the photosensitive resist film subject to the first developing treatment to perform a first cleaning treatment; subjecting the photosensitive resist film subjected to the first cleaning treatment to a second developing treatment; and subjecting the photosensitive resist film subjected to the second developing treatment to a second cleaning treatment.
摘要翻译：公开了一种显影方法，该方法包括使曝光的光敏抗蚀剂膜进行第一显影处理，其中曝光所需图案的光敏抗蚀剂膜显影; 将相对于抗蚀剂膜的表面具有氧化性或碱性的清洗溶液提供给经受第一显影处理的感光性抗蚀剂膜，以进行第一清洗处理; 对经受第一清洗处理的感光性抗蚀剂膜进行第二显影处理; 对进行了第二显影处理的感光性抗蚀剂膜进行第二次清洗处理。

8. 发明申请

US20080035851A1 Processing method, manufacturing method of semiconductor device, and processing apparatus 审中-公开
公开(公告)号：US20080035851A1
公开(公告)日：2008-02-14
申请号：US11905977
申请日：2007-10-05
申请人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
发明人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
IPC分类号： G21K5/04
CPC分类号： H01L23/544 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2103/172 , G03F7/2026 , G03F7/70341 , G03F9/7076 , G03F9/708 , G03F9/7084 , G21K5/10 , H01J2237/30438 , H01L2223/54453 , H01L2924/0002 , Y10S438/949 , H01L2924/00
摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

9. 发明授权

US07097960B2 Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method 失效
公开(公告)号：US07097960B2
公开(公告)日：2006-08-29
申请号：US10824482
申请日：2004-04-15
申请人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
发明人： Riichiro Takahashi , Kei Hayasaki , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： G03F7/32 , G03F7/38 , G03F7/30 , G03F7/40
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

10. 发明申请

US20060151015A1 Chemical liquid processing apparatus for processing a substrate and the method thereof 审中-公开
公开(公告)号：US20060151015A1
公开(公告)日：2006-07-13
申请号：US11372010
申请日：2006-03-10
申请人： Shinichi Ito , Riichiro Takahashi , Tatsuhiko Ema , Katsuya Okamura
发明人： Shinichi Ito , Riichiro Takahashi , Tatsuhiko Ema , Katsuya Okamura
IPC分类号： B08B3/00
CPC分类号： H01L21/67034 , B05C11/06 , B05C11/08 , B05D1/005 , B05D3/0406 , H01L21/6708 , Y10S134/902 , Y10S438/906
摘要： In this disclosure, air flow is formed above chemical liquid film and a move of the chemical liquid is generated by making the air flow into a contact with the surface of chemical liquid. Further, a negative pressure is generated in a space between a processing object substrate and a plate by rotating the plate. Consequently, uniformity of processing of chemical liquid is improved, so that liquid removing step can be carried out effectively. As a result, yield rate of chemical liquid treatment can be improved.

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