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1. 发明申请

US20140083349A1 REMOVABLE THERMAL CONTROL FOR RIBBON CRYSTAL PULLING FURNACES 审中-公开
标题翻译： RIBBON水晶拉丝炉的可拆卸热控制
公开(公告)号：US20140083349A1
公开(公告)日：2014-03-27
申请号：US13624673
申请日：2012-09-21
申请人： Richard L. WALLACE , David HARVEY , Weidong HUANG , Scott REITSMA , Christine RICHARDSON
发明人： Richard L. WALLACE , David HARVEY , Weidong HUANG , Scott REITSMA , Christine RICHARDSON
IPC分类号： C30B15/14 , C30B15/00
CPC分类号： C30B15/14 , C30B15/005 , C30B15/007 , C30B29/06 , Y10T117/1032
摘要： A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing a crucible.
摘要翻译：带状拉晶炉具有基部绝缘和可拆卸地连接到基础绝缘体的衬里绝缘。衬垫绝缘体的至少一部分形成用于容纳坩埚的内部。

2. 发明申请

US20120067273A1 METHODS FOR EFFICIENTLY MAKING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL FOR SOLAR CELLS AND THE LIKE 有权
标题翻译：用于有效地制造用于太阳能电池的材料的半导体体的方法
公开(公告)号：US20120067273A1
公开(公告)日：2012-03-22
申请号：US13299031
申请日：2011-11-17
申请人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
发明人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
IPC分类号： C30B11/00 , C30B19/10
CPC分类号： B29C33/44 , C30B11/007 , C30B15/30 , C30B19/068 , C30B28/04 , C30B29/06
摘要： A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.
摘要翻译：在模板上施加压差，在其上形成半导体（例如硅）晶片（例如，用于太阳能电池）。压差的放松允许晶片的释放。模具片可以比熔体更冷。几乎完全通过成形晶片的厚度提取热量。液体和固体界面基本上平行于模片。凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。模板必须允许气体流过它。可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。可以通过许多方法控制晶粒尺寸。

3. 发明授权

US08293009B2 Methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like 有权
标题翻译：用于从太阳能电池等的熔融材料有效地制造薄的半导体本体的方法
公开(公告)号：US08293009B2
公开(公告)日：2012-10-23
申请号：US13299031
申请日：2011-11-17
申请人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
发明人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
IPC分类号： C30B15/02
CPC分类号： B29C33/44 , C30B11/007 , C30B15/30 , C30B19/068 , C30B28/04 , C30B29/06
摘要： A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.
摘要翻译：在模板上施加压差，在其上形成半导体（例如硅）晶片（例如，用于太阳能电池）。压差的放松允许晶片的释放。模具片可以比熔体更冷。几乎完全通过成形晶片的厚度提取热量。液体和固体界面基本上平行于模片。凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。模板必须允许气体流过它。可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。可以通过许多方法控制晶粒尺寸。

4. 发明申请

US20110247549A1 METHODS AND APPARATI FOR MAKING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL 审中-公开
标题翻译：用于制备薄膜半导体体的方法和装置
公开(公告)号：US20110247549A1
公开(公告)日：2011-10-13
申请号：US12999206
申请日：2010-03-09
申请人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
发明人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
IPC分类号： C30B11/02 , C30B15/00
CPC分类号： B29C33/44 , C30B11/007 , C30B15/30 , C30B19/068 , C30B28/04 , C30B29/06
摘要： A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.
摘要翻译：在模板上施加压差，并在其上形成半导体（例如硅）晶片。压差的放松允许晶片的释放。模具片可以比熔体更冷。几乎完全通过成形晶片的厚度提取热量。液体和固体界面基本上平行于模片。凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。模板必须允许气体流过它。可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。可以通过许多方法控制晶粒尺寸。

5. 发明申请

US20110247546A1 Ribbon Crystal String for Increasing Wafer Yield 审中-公开
标题翻译：用于增加晶圆产量的丝带水晶线条
公开(公告)号：US20110247546A1
公开(公告)日：2011-10-13
申请号：US13079838
申请日：2011-04-05
申请人： Christine Richardson , Weidong Huang , Richard L. Wallace , Daniel Doble , Scott Reitsma
发明人： Christine Richardson , Weidong Huang , Richard L. Wallace , Daniel Doble , Scott Reitsma
IPC分类号： C30B15/30 , C03B15/02
CPC分类号： C30B15/34 , C04B35/62849 , C04B35/62852 , C04B35/62863 , C04B35/62868 , C04B35/62871 , C04B35/62873 , C04B35/62894 , C04B2235/5248 , C30B15/36 , C30B35/00 , Y10T117/1032 , Y10T428/24479 , Y10T428/24628 , Y10T428/2918 , Y10T428/2929 , Y10T428/2942 , Y10T428/2962 , Y10T428/30
摘要： A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a generally longitudinal axis that diverges with the width dimension of the ribbon crystal body.
摘要翻译：丝带水晶具有宽度尺寸的身体和嵌入身体内的弦。弦具有大致细长的横截面形状。弦的横截面具有与带状晶体的宽度尺寸发散的大致纵轴。

6. 发明授权

US07232484B2 Method and apparatus for doping semiconductors 失效
公开(公告)号：US07232484B2
公开(公告)日：2007-06-19
申请号：US10997160
申请日：2004-11-24
申请人： Mary C. Cretella , Richard L. Wallace, Jr.
发明人： Mary C. Cretella , Richard L. Wallace, Jr.
IPC分类号： C30B15/20
CPC分类号： H01L21/228 , H01L21/2225 , H01L31/0288 , H01L31/1804 , H01L31/182 , H01L31/184 , Y02E10/544 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： Semiconductor materials such as silicon particles are doped by mixing the semiconductor material with a solution having a dopan and a solvent. The solvent is removed from the wetted surface of the particles of the semiconductor material, thereby yielding particles that are substantially free from the solvent and are uniformly coated with the dopant.

7. 发明申请

US20110146782A1 METHODS TO PATTERN DIFFUSION LAYERS IN SOLAR CELLS AND SOLAR CELLS MADE BY SUCH METHODS 有权
标题翻译：通过这种方法制造太阳能电池和太阳能电池的扩散层图案的方法
公开(公告)号：US20110146782A1
公开(公告)日：2011-06-23
申请号：US12937829
申请日：2009-04-17
申请人： Andrew M. Gabor , Richard L. Wallace
发明人： Andrew M. Gabor , Richard L. Wallace
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/1804 , H01L21/228 , H01L21/6715 , H01L31/022425 , H01L31/0288 , Y02E10/547 , Y02P70/521
摘要： Methods exploiting a Self Aligned Cell (SAC) architecture for doping purposes, use the architecture to direct the deposition and application of either a dopant or a diffusion retarder. Doping is provided in regions that will become metallization for conducting fingers. Dopant may be treated directly into metallization grooves. Or, diffusion retarder may be provided in non-groove locations, and dopant may be provided over some or all of the entire wafer surface. Dopant and metal automatically go where desired, and in register with each other. The SAC architecture also includes concave surfaces for light absorbing regions of a cell, to reduce reflection of light energy, which regions may also be treated with dopant in the concavities, to result in semiconductor emitter lines. Alternatively, diffusion retarder may be treated into the concavities, leaving upper tips of ridges between the concavities exposed, thereby subject to deeper doping.
摘要翻译：利用自对准单元（SAC）架构进行掺杂的方法，使用该架构来指导掺杂剂或扩散延迟器的沉积和应用。在将成为导电手指的金属化的区域中提供掺杂。掺杂剂可以直接处理成金属化槽。或者，扩散延迟器可以设置在非凹槽位置，并且可以在整个晶片表面的一些或全部上提供掺杂剂。掺杂剂和金属自动进入需要的地方，并相互注册。 SAC结构还包括用于单元的光吸收区域的凹面，以减少光能的反射，哪些区域也可以在凹部中用掺杂剂处理，以产生半导体发射线。或者，扩散延迟器可以被处理成凹面，从而使暴露的凹部之间的脊的上部尖端留下更深的掺杂。

8. 发明申请

US20080134964A1 System and Method of Forming a Crystal 审中-公开
标题翻译：一种晶体的系统和方法
公开(公告)号：US20080134964A1
公开(公告)日：2008-06-12
申请号：US11741372
申请日：2007-04-27
申请人： David Harvey , Weidong Huang , Richard L. Wallace , Leo van Glabbeek , Emanuel M. Sachs
发明人： David Harvey , Weidong Huang , Richard L. Wallace , Leo van Glabbeek , Emanuel M. Sachs
IPC分类号： C30B15/34
CPC分类号： C30B15/005 , C30B15/002 , C30B15/007 , C30B15/10 , C30B15/24 , C30B29/06 , Y10T117/1044
摘要： A system for producing a crystal formed from a material with impurities has a crucible for containing the material. The crucible has, among other things, a crystal region for forming the crystal, an introduction region for receiving the material, and a removal region for removing a portion of the material. The crucible is configured to produce a generally one directional flow of the material (in liquid form) from the introduction region toward the removal region. This generally one directional flow causes the removal region to have a higher concentration of impurities than the introduction region.
摘要翻译：用于制造由具有杂质的材料形成的晶体的系统具有容纳该材料的坩埚。坩埚尤其具有用于形成晶体的晶体区域，用于接收材料的引入区域和用于去除材料的一部分的去除区域。坩埚被配置为产生从引入区域朝向移除区域的材料（液体形式）的大致一个方向的流动。这通常一个定向流使得去除区域具有比引入区域更高的杂质浓度。

9. 发明授权

US08628992B2 Methods to pattern diffusion layers in solar cells and solar cells made by such methods 有权
标题翻译：通过这种方法制造太阳能电池和太阳能电池的扩散层图案的方法
公开(公告)号：US08628992B2
公开(公告)日：2014-01-14
申请号：US12937829
申请日：2009-04-17
申请人： Andrew M. Gabor , Richard L. Wallace
发明人： Andrew M. Gabor , Richard L. Wallace
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L21/228 , H01L21/6715 , H01L31/022425 , H01L31/0288 , Y02E10/547 , Y02P70/521
摘要： Methods exploiting a Self Aligned Cell (SAC) architecture for doping purposes, use the architecture to direct the deposition and application of either a dopant or a diffusion retarder. Doping is provided in regions that will become metallization for conducting fingers. Dopant may be treated directly into metallization grooves. Or, diffusion retarder may be provided in non-groove locations, and dopant may be provided over some or all of the entire wafer surface. Dopant and metal automatically go where desired, and in register with each other. The SAC architecture also includes concave surfaces for light absorbing regions of a cell, to reduce reflection of light energy, which regions may also be treated with dopant in the concavities, to result in semi-conductor emitter lines. Alternatively, diffusion retarder may be treated into the concavities, leaving upper tips of ridges between the concavities exposed, thereby subject to deeper doping.
摘要翻译：利用自对准单元（SAC）架构进行掺杂的方法，使用该架构来指导掺杂剂或扩散延迟器的沉积和应用。在将成为导电手指的金属化的区域中提供掺杂。掺杂剂可以直接处理成金属化槽。或者，扩散延迟器可以设置在非凹槽位置，并且可以在整个晶片表面的一些或全部上提供掺杂剂。掺杂剂和金属自动进入需要的地方，并相互注册。 SAC架构还包括用于单元的光吸收区域的凹面，以减少光能的反射，哪些区域也可以在凹部中用掺杂剂处理，以产生半导体发射线。或者，扩散延迟器可以被处理成凹面，从而使暴露的凹部之间的脊的上部尖端留下更深的掺杂。

10. 发明申请

US20120038031A1 DISPENSING LIQUID CONTAINING MATERIAL TO PATTERNED SURFACES USING A DISPENSING TUBE 审中-公开
标题翻译：使用分配管将含液体的材料分配到图案表面
公开(公告)号：US20120038031A1
公开(公告)日：2012-02-16
申请号：US13142472
申请日：2010-01-06
申请人： Emanuel M. Sachs , Richard L. Wallace , James F. Bredt , Benjamin F. Polito , Ali Ersen
发明人： Emanuel M. Sachs , Richard L. Wallace , James F. Bredt , Benjamin F. Polito , Ali Ersen
IPC分类号： H01L23/544 , B65D35/38
CPC分类号： H01L31/022425 , H01L21/6715 , Y02E10/50
摘要： Materials that contain liquid are deposited into grooves upon a surface of a work piece, such as a silicon wafer to form a solar cell. Liquid can be dispensed into work piece paths, such as grooves under pressure through a dispensing tube. The tube mechanically tracks in the groove. The tube may be small and rest at the groove bottom, with the sidewalls providing restraint. Or it may be larger and ride on the top edges of the groove. A tracking feature, such as a protrusion, Non-circular cross-sections, molded-on protrusions and lobes also enhance tracking. The tube may be forced against the groove by spring or magnetic loading. Alignment guides, such as lead-in features may guide the tube into the groove. Restoring features along the path may restore a wayward tube. Many tubes may be used. Many work pieces can be treated in a line or on a drum.
摘要翻译：含有液体的材料沉积在诸如硅晶片的工件的表面上的凹槽中，以形成太阳能电池。液体可以分配到工件路径中，例如通过分配管的压力下的槽。管子在凹槽中机械地跟踪。管可以小并且在槽底部搁置，其中侧壁提供约束。或者它可能更大并且骑在凹槽的顶部边缘上。跟踪特征，例如突起，非圆形横截面，模制突起和凸角也增强跟踪。管可以通过弹簧或磁负载而被迫力抵靠凹槽。诸如引入特征的对准引导件可以将管引导到凹槽中。沿着路径还原功能可能会恢复一个顺从的管。可以使用许多管。许多工件可以在一条线或一个鼓上进行处理。

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