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1. 发明申请

US20070242548A1 Programmable Semiconductor Device 有权
标题翻译：可编程半导体器件
公开(公告)号：US20070242548A1
公开(公告)日：2007-10-18
申请号：US10552971
申请日：2003-04-30
申请人： William Tonti , Wayne Berry , John Fifield , William Guthrie , Richard Kontra
发明人： William Tonti , Wayne Berry , John Fifield , William Guthrie , Richard Kontra
IPC分类号： G11C17/16 , H01L29/10
CPC分类号： G11C17/16 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A programmable device includes a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having first and second ends, and an upper surface S; the first end (12a) is substantially wider than the second end (12b), and a metallic material is disposed on the upper surface; the metallic material being physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and the metallic material.
摘要翻译：可编程器件包括衬底（10）; 绝缘体（13）; 绝缘体上的细长半导体材料（12），具有第一和第二端的细长半导体材料和上表面S; 第一端部（12a）基本上比第二端部（12b）更宽，并且金属材料设置在上表面上; 所述金属材料可响应于流过半导体材料和金属材料的电流I而沿着上表面物理迁移。

2. 发明申请

US20070051875A1 OPTOELECTRONIC MEMORY DEVICES 失效
标题翻译：光电存储器件
公开(公告)号：US20070051875A1
公开(公告)日：2007-03-08
申请号：US11161941
申请日：2005-08-23
申请人： Fen Chen , Richard Kontra , Tom Lee , Theodore Levin , Christopher Muzzy , Timothy Sullivan
发明人： Fen Chen , Richard Kontra , Tom Lee , Theodore Levin , Christopher Muzzy , Timothy Sullivan
IPC分类号： H01J40/14 , H01L31/00
CPC分类号： G11C13/0009 , G11C13/0004 , G11C13/004 , G11C13/04 , G11C13/047 , G11C2013/0054 , H01L45/1213 , H01L45/145
摘要： A structure and a method for operating the same. The method comprises providing a resistive/reflective region on a substrate, wherein the resistive/reflective region comprises a material having a characteristic of changing the material's reflectance due to the material absorbing heat; sending an electric current through the resistive/reflective region so as to cause a reflectance change in the resistive/reflective region from a first reflectance value to a second reflectance value different from the first reflectance value; and optically reading the reflectance change in the resistive/reflective region.
摘要翻译：一种结构及其操作方法。该方法包括在衬底上提供电阻/反射区域，其中电阻/反射区域包括具有由于材料吸收热而改变材料的反射率的特性的材料; 发送电流通过电阻/反射区域，以使电阻/反射区域的反射率变化从第一反射率值到不同于第一反射率值的第二反射率值; 并且光学地读取电阻/反射区域中的反射率变化。

3. 发明申请

US20060163685A1 THERMO-MECHANICAL CLEAVABLE STRUCTURE 有权
标题翻译：热机械可靠结构
公开(公告)号：US20060163685A1
公开(公告)日：2006-07-27
申请号：US10905905
申请日：2005-01-26
申请人： Fen Chen , Cathryn Christiansen , Richard Kontra , Tom Lee , Alvin Strong , Timothy Sullivan , Joseph Therrien
发明人： Fen Chen , Cathryn Christiansen , Richard Kontra , Tom Lee , Alvin Strong , Timothy Sullivan , Joseph Therrien
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A thermo-mechanical cleavable structure is provided and may be used as a programmable fuse for integrated circuits. As applied to a programmable fuse, the thermo-mechanical cleavable structure includes an electrically conductive cleavable layer adjacent to a thermo-mechanical stressor. As electricity is passed through the cleavable layer, the cleavable layer and the thermo-mechanical stressor are heated and gas evolves from the thermo-mechanical stressor. The gas locally insulates the thermo-mechanical stressor, causing local melting adjacent to the bubbles in the thermo-mechanical stressor and the cleavable structure forming cleaving sites. The melting also interrupts the current flow through the cleavable structure so the cleavable structure cools and contracts. The thermo-mechanical stressor also contracts due to a phase change caused by the evolution of gas therefrom. As the thermo-mechanical cleavable structure cools, the cleaving sites expand causing gaps to be permanently formed therein.
摘要翻译：提供了一种热机械可切割结构，可用作集成电路的可编程保险丝。如应用于可编程保险丝，热机械可切割结构包括与热机械应力源相邻的导电可切割层。当电通过可切割层时，可切割层和热机械应力器被加热并且气体从热机械应力源逸出。气体将热机械应力局部绝缘，导致邻近热机械应力的气泡局部熔化，形成裂开位置的可切割结构。熔化还中断当前通过可切割结构的流动，因此可切割结构冷却和收缩。热机械应力还由于由其产生的气体引起的相变而收缩。当热机械可裂解结构冷却时，裂解位置膨胀，导致间隙永久形成。

4. 发明申请

US20070298526A1 PROGRAMMABLE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：可编程半导体器件
公开(公告)号：US20070298526A1
公开(公告)日：2007-12-27
申请号：US11768208
申请日：2007-06-26
申请人： Wayne Berry , John Fifield , William Guthrie , Richard Kontra , William Tonti
发明人： Wayne Berry , John Fifield , William Guthrie , Richard Kontra , William Tonti
IPC分类号： G01R31/26
CPC分类号： G11C17/16 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A design structure for designing and manufacturing a programmable device. The design structure includes a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having first and second ends, and an upper surface S; the first end (12a) is substantially wider than the second end (12b), and a metallic material is disposed on the upper surface; the metallic material being physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and the metallic material.
摘要翻译：用于设计和制造可编程器件的设计结构。设计结构包括基板（10）; 绝缘体（13）; 绝缘体上的细长半导体材料（12），具有第一和第二端的细长半导体材料和上表面S; 第一端部（12a）基本上比第二端部（12b）更宽，并且金属材料设置在上表面上; 所述金属材料可响应于流过半导体材料和金属材料的电流I而沿着上表面物理迁移。

5. 发明申请

US20070284694A1 METHOD OF CONTROLLING GRAIN SIZE IN A POLYSILICON LAYER AND IN SEMICONDUCTOR DEVICES HAVING POLYSILICON STRUCTURE 有权
标题翻译：控制多晶硅层中晶粒尺寸的方法及具有多晶硅结构的半导体器件
公开(公告)号：US20070284694A1
公开(公告)日：2007-12-13
申请号：US11770993
申请日：2007-06-29
申请人： Peter Geiss , Joseph Greco , Richard Kontra , Emily Lanning
发明人： Peter Geiss , Joseph Greco , Richard Kontra , Emily Lanning
IPC分类号： H01L21/8222 , H01L21/331
CPC分类号： H01L29/6656 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/26506 , H01L21/26513 , H01L21/2652 , H01L29/0804 , H01L29/1083 , H01L29/4916 , H01L29/4925 , H01L29/66242 , H01L29/7375 , H01L29/7378 , Y10S257/914
摘要： A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method includes forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysilicon layer such that an average resultant grain size of the implanted polysilicon layer after performing a pre-determined anneal is higher or lower than an average resultant grain size than would be obtained after performing the same pre-determined anneal on the polysilicon layer without a polysilicon grain size modulating species ion implant.
摘要翻译：调制多晶硅层的晶粒尺寸的方法和用该方法制造的器件。该方法包括在衬底上形成多晶硅层; 并且进行多晶硅粒度调制物质的离子注入到所述多晶硅层中，使得在进行预定退火之后所述注入的多晶硅层的平均所得晶粒尺寸高于或低于平均得到的晶粒尺寸，在多晶硅层上执行相同的预定退火，而不需要多晶粒度调节物质离子注入。

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