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1. 发明申请

US20070257375A1 Increased interconnect density electronic package and method of fabrication 审中-公开
标题翻译：增加的互连密度电子封装和制造方法
公开(公告)号：US20070257375A1
公开(公告)日：2007-11-08
申请号：US11415705
申请日：2006-05-02
申请人： James Roland , Ray Parkhurst , Ashish Alawani , Marshall Maple , Thu Nguyen
发明人： James Roland , Ray Parkhurst , Ashish Alawani , Marshall Maple , Thu Nguyen
IPC分类号： H01L21/00
CPC分类号： H05K3/341 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/81 , H01L2224/0401 , H01L2224/0603 , H01L2224/1147 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/14 , H01L2224/1403 , H01L2224/14051 , H01L2224/81011 , H01L2224/81191 , H01L2224/81194 , H01L2224/81801 , H01L2224/8191 , H01L2924/00013 , H01L2924/01005 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15787 , H01L2924/19043 , H05K1/0209 , H05K2201/09781 , H05K2201/10659 , H05K2201/10969 , H05K2201/10984 , Y02P70/613 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： An electronic package. The electronic package includes an electronic component having a heat producing device, an attachment piece, and at least two attachment units. Each unit includes an attachment pillar having a mating surface, a solder layer formed on the mating surface, and an attachment pad located on the attachment piece. The pillar of each unit is attached to its unit attachment pad via its unit solder layer and is otherwise attached to the electronic component. One pillar at least partially covers the heat producing device. Prior to attachment of pillars to their associated unit pads, the unit solder layer of the pillar at least partially covering the heat producing device is patterned to cover less than its mating surface, and the pillar at least partially covering the heat producing device is thermally connected to the heat producing device and to its unit attachment pad via its unit solder layer.
摘要翻译：电子包装。电子包装包括具有发热装置，附件和至少两个附接单元的电子部件。每个单元包括具有配合表面的附接柱，形成在配合表面上的焊料层和位于附件上的附接垫。每个单元的支柱通过其单元焊料层附接到其单元附接垫，并且否则附接到电子部件。一支柱至少部分地覆盖发热装置。在将支柱附接到其相关联的单元焊盘之前，至少部分覆盖发热装置的柱的单元焊料层被图案化以覆盖小于其配合表面，并且至少部分覆盖发热装置的柱被热连接通过其单元焊料层到制热装置和其单元附接垫。

2. 发明授权

US09608749B2 Multi-band wireless communication device with multiplexer and method of multiplexing multi-band wireless signals 有权
公开(公告)号：US09608749B2
公开(公告)日：2017-03-28
申请号：US13071863
申请日：2011-03-25
申请人： William Carrol Mueller , Ray Parkhurst
发明人： William Carrol Mueller , Ray Parkhurst
IPC分类号： H04J1/08 , H04B1/00 , H04W88/06
CPC分类号： H04J1/08 , H04B1/0057 , H04W88/06
摘要： An apparatus includes: a first multiplexer configured to allow bi-directional communication over a first plurality of multiplexed communication bands that each include a corresponding transmit band and a corresponding receive band, wherein none of the transmit bands of the first multiplexer have transmit frequencies that overlap with any receive frequencies of any of the receive bands of the first multiplexer; a second multiplexer configured to allow bi-directional communication over a second plurality of multiplexed communication bands that each include a corresponding transmit band and a corresponding receive band, wherein none of the transmit bands of the second multiplexer have transmit frequencies that overlap with any receive frequencies of any of the receive bands of the second multiplexer; and an electromechanical band switch configured to selectively connect the first and second multiplexers to a common antenna.

3. 发明授权

US08380146B2 Multi-band, multi-mode RF transmit amplifier system with separate signal paths for linear and saturated operation 有权
标题翻译：多频，多模式RF发射放大器系统，具有用于线性和饱和操作的独立信号路径
公开(公告)号：US08380146B2
公开(公告)日：2013-02-19
申请号：US12650718
申请日：2009-12-31
申请人： Ray Parkhurst , Edward Chen , William Carrol Mueller
发明人： Ray Parkhurst , Edward Chen , William Carrol Mueller
IPC分类号： H01Q11/12 , H04B1/04 , H04M1/00
CPC分类号： H03F3/68 , H03F1/02 , H03F1/0277 , H03F1/56 , H03F3/19 , H03F3/24 , H03F3/72 , H03F2200/111 , H03F2200/387 , H03F2200/405 , H03F2200/408 , H03F2200/411 , H03F2200/414 , H03F2200/417 , H03F2200/421 , H03F2200/429 , H03F2200/451 , H03F2200/507 , H03F2203/7209 , H03F2203/7215 , H03F2203/7227 , H03F2203/7233 , H03F2203/7236 , H04B1/005 , H04B2001/045
摘要： A device includes: an input for receiving an RF input signal having a signal format selected among a plurality of signal formats, including at least one signal format to be linearly amplified, and at least another signal format be amplified in saturation; at least a first and a second output; a first amplification path from the input to the first output that includes a first amplifier that operates in a linear amplification mode with respect to the RF input signal; a second amplification path from the input port to the second output that includes the first amplifier, and a second amplifier that operates in saturated amplification with respect to the RF input signal; and a path selection device that selectively passes the RF input signal through the first amplification path or the second amplification path in response to the selected signal format of the RF input signal.
摘要翻译：一种设备包括：用于接收RF信号的输入信号，其具有选择多个信号格式的信号格式，包括至少一个要被线性放大的信号格式，并且至少另一个信号格式在饱和中被放大; 至少第一和第二输出; 从所述输入到所述第一输出的第一放大路径，其包括相对于所述RF输入信号以线性放大模式操作的第一放大器; 从输入端口到包括第一放大器的第二输出端的第二放大路径以及相对于RF输入信号在饱和放大中工作的第二放大器; 以及路径选择装置，其响应于所选择的RF输入信号的信号格式，选择性地将RF输入信号通过第一放大路径或第二放大路径。

4. 发明授权

US08278720B2 Field effect transistor switch for RF signals and method of making the same 有权
标题翻译：用于射频信号的场效应晶体管开关及其制作方法
公开(公告)号：US08278720B2
公开(公告)日：2012-10-02
申请号：US12748717
申请日：2010-03-29
申请人： Ray Parkhurst , Shyh-Liang Fu
发明人： Ray Parkhurst , Shyh-Liang Fu
IPC分类号： H01L27/11
CPC分类号： H01L27/0605 , H01L27/0629
摘要： A switching device has an input node, an output node, and a control node. The device includes: a substrate having a first side and a second side with a ground plane on the first side of the substrate and a mesa on the second side of the substrate. The mesa is made of a normally-conductive semiconductor material, and an isolation region substantially surrounds the mesa. A field effect transistor (FET) is on the mesa. The FET has an input terminal connected to the input node, an output terminal connected to the output node, and a gate. A capacitor is connected in series between the output terminal of the FET and the gate, and a resistor is connected in series between the control node and the gate. A gate electrode is directly connected to the gate. The gate electrode is disposed substantially entirely on the mesa.
摘要翻译：交换设备具有输入节点，输出节点和控制节点。该装置包括：基板，其具有在基板的第一侧上具有接地平面的第一侧和第二侧以及基板的第二侧上的台面。台面由常导电半导体材料制成，隔离区基本上围绕台面。场效应晶体管（FET）在台面上。 FET具有连接到输入节点的输入端子，连接到输出节点的输出端子和栅极。电容器串联在FET的输出端和栅极之间，电阻串联连接在控制节点和栅极之间。栅电极直接连接到栅极。栅电极基本上完全设置在台面上。

5. 发明申请

US20120049345A1 SUBSTRATE VIAS FOR HEAT REMOVAL FROM SEMICONDUCTOR DIE 有权
标题翻译：用于从半导体器件去除热的基板VIAS
公开(公告)号：US20120049345A1
公开(公告)日：2012-03-01
申请号：US12869844
申请日：2010-08-27
申请人： Tarak A. Railkar , Ashish Alawani , Ray Parkhurst
发明人： Tarak A. Railkar , Ashish Alawani , Ray Parkhurst
IPC分类号： H01L23/48
CPC分类号： H01L23/49822 , H01L23/3677 , H01L23/49827 , H01L2224/16225 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/09701 , H01L2924/1305 , H01L2924/13091 , H01L2924/00
摘要： A substrate comprising a plurality of layers, a first side and a second side; and a via extending through the substrate from the first side to the second side. The via comprises: a first substrate via extending through a first layer of the plurality of layers, the first substrate via having a first cross-sectional area; a first capture pad disposed under the first substrate via, wherein the first capture pad physically contacts the first substrate via; a second substrate via extending through a second layer of the plurality of layers, the second substrate via physically contacting the first capture pad, the second substrate via having a second cross-sectional area that is greater than the first cross-sectional area; and a second thermal and electrical contact pad disposed under the second dielectric layer, wherein the second contact pad physically contacts the second substrate via.
摘要翻译：一种衬底，包括多个层，第一侧和第二侧; 以及从第一侧延伸穿过基板的通孔到第二侧。所述通孔包括：第一衬底，其穿过所述多个层的第一层，所述第一衬底通孔具有第一横截面积; 设置在所述第一基板通孔下方的第一捕获垫，其中所述第一捕获垫物理接触所述第一基板通孔; 第二衬底，其经由第二衬底通过多个层的第二层延伸，所述第二衬底经由物理接触所述第一捕获垫，所述第二衬底通孔具有大于所述第一横截面积的第二横截面积; 以及设置在所述第二介电层下方的第二热和电接触焊盘，其中所述第二接触焊盘物理接触所述第二基板通孔。

6. 发明申请

US20120025370A1 SEMICONDUCTOR STRUCTURE COMPRISING PILLAR AND MOISTURE BARRIER 有权
标题翻译：包括支柱和水分障碍物的半导体结构
公开(公告)号：US20120025370A1
公开(公告)日：2012-02-02
申请号：US13075493
申请日：2011-03-30
申请人： James WHOLEY , Ray PARKHURST
发明人： James WHOLEY , Ray PARKHURST
IPC分类号： H01L23/498
CPC分类号： H01L23/367 , H01L23/3677 , H01L23/4824 , H01L29/7371 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A semiconductor structure includes multiple semiconductor devices on a substrate and a metal layer disposed over the semiconductor devices, the metal layer comprising at least a first trace and a second trace. A conductive pillar is disposed directly on and in electrical contact with the first trace of the metal layer, and a dielectric layer is selectively disposed between the metal layer and the conductive pillar, where the dielectric layer electrically isolates the second trace from the pillar. A moisture barrier surrounds the semiconductor devices around a periphery of the semiconductor structure, and extends from the substrate through the dielectric layer to the conductive pillar.
摘要翻译：半导体结构包括在衬底上的多个半导体器件和设置在半导体器件上的金属层，金属层至少包括第一迹线和第二迹线。导电柱直接设置在金属层的第一迹线上并与之接触，并且介电层选择性地设置在金属层和导电柱之间，其中介电层将第二迹线与柱分离。湿气屏障围绕半导体结构的周边围绕半导体器件，并且从衬底延伸穿过电介质层到导电柱。

7. 发明申请

US20110156812A1 MULTI-BAND, MULTI-MODE RF TRANSMIT AMPLIFIER SYSTEM WITH SEPARATE SIGNAL PATHS FOR LINEAR AND SATURATED OPERATION 有权
标题翻译：多线，多模RF射频放大器系统，具有独立的信号线，用于线性和饱和运行
公开(公告)号：US20110156812A1
公开(公告)日：2011-06-30
申请号：US12650718
申请日：2009-12-31
申请人： Ray PARKHURST , Edward CHEN , William Carrol MUELLER
发明人： Ray PARKHURST , Edward CHEN , William Carrol MUELLER
IPC分类号： H03F3/68
CPC分类号： H03F3/68 , H03F1/02 , H03F1/0277 , H03F1/56 , H03F3/19 , H03F3/24 , H03F3/72 , H03F2200/111 , H03F2200/387 , H03F2200/405 , H03F2200/408 , H03F2200/411 , H03F2200/414 , H03F2200/417 , H03F2200/421 , H03F2200/429 , H03F2200/451 , H03F2200/507 , H03F2203/7209 , H03F2203/7215 , H03F2203/7227 , H03F2203/7233 , H03F2203/7236 , H04B1/005 , H04B2001/045
摘要： A device includes: an input for receiving an RF input signal having a signal format selected among a plurality of signal formats, including at least one signal format to be linearly amplified, and at least another signal format be amplified in saturation; at least a first and a second output; a first amplification path from the input to the first output that includes a first amplifier that operates in a linear amplification mode with respect to the RF input signal; a second amplification path from the input port to the second output that includes the first amplifier, and a second amplifier that operates in saturated amplification with respect to the RF input signal; and a path selection device that selectively passes the RF input signal through the first amplification path or the second amplification path in response to the selected signal format of the RF input signal.
摘要翻译：一种设备包括：用于接收RF信号的输入信号，其具有选择多个信号格式的信号格式，包括至少一个要被线性放大的信号格式，并且至少另一个信号格式在饱和中被放大; 至少第一和第二输出; 从所述输入到所述第一输出的第一放大路径，其包括相对于所述RF输入信号以线性放大模式操作的第一放大器; 从输入端口到包括第一放大器的第二输出端的第二放大路径以及相对于RF输入信号在饱和放大中工作的第二放大器; 以及路径选择装置，其响应于所选择的RF输入信号的信号格式，选择性地将RF输入信号通过第一放大路径或第二放大路径。

8. 发明申请

US20060250731A1 System and method for electrostatic discharge protection in an electronic circuit 审中-公开
标题翻译：电子电路中静电放电保护的系统和方法
公开(公告)号：US20060250731A1
公开(公告)日：2006-11-09
申请号：US11121401
申请日：2005-05-03
申请人： Ray Parkhurst , Ron Ruebusch , Chi Jiaa , Janet Sickler
发明人： Ray Parkhurst , Ron Ruebusch , Chi Jiaa , Janet Sickler
IPC分类号： H02H9/00
CPC分类号： H01L23/62 , H01L2924/0002 , H05K1/0231 , H05K1/0259 , H05K1/0298 , H05K1/167 , H05K1/181 , H05K2201/09309 , H01L2924/00
摘要： A system and method for implementing an electronic circuit for protecting electronic components from ESD. A PCB or IC may include an electrostatic discharge protection layer having a first and second conductive layer separated by a semi-conductive dielectric layer. Further, the PCB/IC may include a protected node coupled to the first conductive layer and a current-shunt node electrically coupled to the second conductive layer, such that a signal at the protected node that is below a threshold magnitude propagates through the protected node in a normal operating path and a signal at the protected node that exceeds a threshold magnitude is diverted to the semi-conductive dielectric layer to the current-shunt node in a current-shunt path. In this manner, existing layers of a PCB/IC may be used for both ESD protection and other functions, such as ground planes or battery plane by isolating the specific sections of the layer for its intended use.
摘要翻译：一种用于实现用于保护电子部件免受ESD的电子电路的系统和方法。 PCB或IC可以包括具有由半导电介电层隔开的第一和第二导电层的静电放电保护层。此外，PCB / IC可以包括耦合到第一导电层的受保护节点和电耦合到第二导电层的电流分流节点，使得受保护节点处于阈值以下的信号通过受保护节点传播在正常操作路径中，超过阈值幅度的受保护节点处的信号被转移到电流分流路径中的电流分流节点的半导体电介质层。以这种方式，PCB / IC的现有层可以用于ESD保护和其它功能，例如通过将层的特定部分隔离用于其预期用途，诸如接地层或电池平面。

9. 发明申请

US20050237110A1 RF power amplifier with load insensitive indirect forward power detector 失效
标题翻译：具有负载不敏感间接正向功率检测器的RF功率放大器
公开(公告)号：US20050237110A1
公开(公告)日：2005-10-27
申请号：US10832791
申请日：2004-04-26
申请人： Ray Parkhurst , Bartholomeus Jansen , Lovell Camnitz , Camille Lesko
发明人： Ray Parkhurst , Bartholomeus Jansen , Lovell Camnitz , Camille Lesko
IPC分类号： H03G3/20 , H03G3/30
CPC分类号： H03G3/3042
摘要： A power amplifier circuit includes an adjustable gain power amplifier for amplifying an RF input signal. An isolated node in the adjustable gain power amplifier is isolated from the output load by a gain stage of the adjustable gain power amplifier. The power level of a signal at the isolated node corresponds to the power level of a signal at the output load. A detector is either capacitively coupled to the isolated node or connected by a direct current (DC) connection. The detector detects the power level of the signal at the isolated node. The detector generates a power level indicator that is sent to a gain control circuit. The gain control circuit adjusts the gain of the adjustable gain power amplifier to maintain a constant drive level at the isolated node.
摘要翻译：功率放大器电路包括用于放大RF输入信号的可调增益功率放大器。可调增益功率放大器中的隔离节点通过可调增益功率放大器的增益级与输出负载隔离。隔离节点处的信号的功率电平对应于输出负载处的信号的功率电平。检测器电容耦合到隔离节点或通过直流（DC）连接来连接。检测器检测隔离节点处的信号功率电平。检测器产生发送到增益控制电路的功率电平指示器。增益控制电路调整可调增益功率放大器的增益，以保持隔离节点处的恒定驱动电平。

10. 发明申请

US20050024137A1 Power detector for mismatched load 失效
公开(公告)号：US20050024137A1
公开(公告)日：2005-02-03
申请号：US10633191
申请日：2003-07-31
申请人： Lovell Camnitz , Bartholomeus Jansen , Ray Parkhurst
发明人： Lovell Camnitz , Bartholomeus Jansen , Ray Parkhurst
IPC分类号： H03G3/30 , H03G3/20
CPC分类号： G01R31/3163 , H03G3/3042
摘要： A method for measuring the forward power output of an amplifier with improved accuracy with a mismatched load based on probing the amplitude of the AC voltage and current in the final amplifier stage. Amplitudes are combined resulting in a composite reading that is affected less by load mismatch. Variations include measuring signal amplitude at two points 90 degrees apart in the transmission medium and measuring the power supply voltage and current of a saturated amplifier.

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