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    • 3. 发明申请
    • MULTI-BAND WIRELESS COMMUNICATION DEVICE WITH MULTIPLEXER AND METHOD OF MULTIPLEXING MULTI-BAND WIRELESS SIGNALS
    • 具有多路复用器的多带无线通信设备和多层无线信号多路复用方法
    • US20120243446A1
    • 2012-09-27
    • US13071863
    • 2011-03-25
    • William Carrol MUELLERRay PARKHURST
    • William Carrol MUELLERRay PARKHURST
    • H04W4/00H04J3/00
    • H04J1/08H04B1/0057H04W88/06
    • An apparatus includes: a first multiplexer configured to allow bi-directional communication over a first plurality of multiplexed communication bands that each include a corresponding transmit band and a corresponding receive band, wherein none of the transmit bands of the first multiplexer have transmit frequencies that overlap with any receive frequencies of any of the receive bands of the first multiplexer; a second multiplexer configured to allow bi-directional communication over a second plurality of multiplexed communication bands that each include a corresponding transmit band and a corresponding receive band, wherein none of the transmit bands of the second multiplexer have transmit frequencies that overlap with any receive frequencies of any of the receive bands of the second multiplexer; and an electromechanical band switch configured to selectively connect the first and second multiplexers to a common antenna.
    • 一种装置包括:第一多路复用器,被配置为允许在包括对应的发射频带和对应的接收频带的第一多个复用的通信频带上进行双向通信,其中第一多路复用器的发射频带中没有一个发射频率重叠 具有第一多路复用器的任何接收频带的任何接收频率; 第二多路复用器,被配置为允许在每个包括对应的发射频带和对应的接收频带的第二多路复用通信频带上进行双向通信,其中第二多路复用器的发射频带都不具有与任何接收频率重叠的发射频率 的第二多路复用器的接收频带; 以及机电频带开关,被配置为选择性地将第一和第二多路复用器连接到公共天线。
    • 4. 发明申请
    • FIELD EFFECT TRANSISTOR SWITCH FOR RF SIGNALS AND METHOD OF MAKING THE SAME
    • 用于射频信号的场效应晶体管开关及其制造方法
    • US20110233628A1
    • 2011-09-29
    • US12748717
    • 2010-03-29
    • Ray PARKHURSTShyh-Liang FU
    • Ray PARKHURSTShyh-Liang FU
    • H01L27/06H01L21/782
    • H01L27/0605H01L27/0629
    • A switching device has an input node, an output node, and a control node. The device includes: a substrate having a first side and a second side with a ground plane on the first side of the substrate and a mesa on the second side of the substrate. The mesa is made of a normally-conductive semiconductor material, and an isolation region substantially surrounds the mesa. A field effect transistor (FET) is on the mesa. The FET has an input terminal connected to the input node, an output terminal connected to the output node, and a gate. A capacitor is connected in series between the output terminal of the FET and the gate, and a resistor is connected in series between the control node and the gate. A gate electrode is directly connected to the gate. The gate electrode is disposed substantially entirely on the mesa.
    • 交换设备具有输入节点,输出节点和控制节点。 该装置包括:基板,其具有在基板的第一侧上具有接地平面的第一侧和第二侧以及基板的第二侧上的台面。 台面由常导电半导体材料制成,隔离区基本上围绕台面。 场效应晶体管(FET)在台面上。 FET具有连接到输入节点的输入端子,连接到输出节点的输出端子和栅极。 电容器串联在FET的输出端和栅极之间,电阻串联连接在控制节点和栅极之间。 栅电极直接连接到栅极。 栅电极基本上完全设置在台面上。