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1. 发明授权

US07741152B2 Three-dimensional package and method of making the same 有权
标题翻译：三维包装及其制作方法
公开(公告)号：US07741152B2
公开(公告)日：2010-06-22
申请号：US11645040
申请日：2006-12-26
申请人： Min-Lung Huang , Wei-Chung Wang , Po-Jen Cheng , Kuo-Chung Yee , Ching-Huei Su , Jian-Wen Lo , Chian-Chi Lin
发明人： Min-Lung Huang , Wei-Chung Wang , Po-Jen Cheng , Kuo-Chung Yee , Ching-Huei Su , Jian-Wen Lo , Chian-Chi Lin
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L25/0657 , H01L25/50 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： A method of making a three-dimensional package, including: (a) providing a wafer; (b) forming at least one blind hole; (c) forming an isolation layer; (d) forming a conductive layer; (e) forming a dry film; (f) filling the blind hole with a solder; (g) removing the dry film; (h) patterning the conductive layer; (i) removing a part of the lower surface of the wafer and the isolation layer, so as to expose the conductive layer; (j) stacking a plurality of the wafers, and performing a reflow process; and (k) cutting the stacked wafers, so as to form a plurality of three-dimensional packages. As such, the lower end of the conductive layer is inserted into the solder of the lower wafer, so as to enhance the joint between the conductive layer and the solder, and effectively reduce the overall height of the three-dimensional packages after joining.
摘要翻译：一种制造三维封装的方法，包括：（a）提供晶片; （b）形成至少一个盲孔; （c）形成隔离层; （d）形成导电层; （e）形成干膜; （f）用焊料填充盲孔; （g）去除干膜; （h）图案化导电层; （i）去除晶片的下表面的一部分和隔离层，以暴露导电层; （j）堆叠多个晶片，并进行回流处理; 和（k）切割堆叠的晶片，以便形成多个三维封装。因此，导电层的下端插入下晶片的焊料中，以增强导电层和焊料之间的接合，并且有效地降低了连接后三维封装的整体高度。

2. 发明申请

US20070174650A1 Efficiency optimization method for hardware devices with adjustable clock frequencies 有权
标题翻译：具有可调时钟频率的硬件设备的效率优化方法
公开(公告)号：US20070174650A1
公开(公告)日：2007-07-26
申请号：US11335534
申请日：2006-01-20
申请人： Ming-Ting Won , Fu-Shun Wu , Po-Jen Cheng
发明人： Ming-Ting Won , Fu-Shun Wu , Po-Jen Cheng
IPC分类号： G06F1/04
CPC分类号： G06F1/206 , G06F1/3203 , G06F1/324 , Y02D10/126
摘要： An efficiency optimization method for hardware devices with adjustable clock frequencies is provided. The work current of the hardware device is measured and used to obtain the corresponding work level from a conversion table. The obtained work level is compared with the currently executing work level to make adjustments for various parameters for the hardware device and for the operation of the corresponding heat-dissipating device. Therefore, the hardware device can achieve a better performance.
摘要翻译：提供了具有可调时钟频率的硬件设备的效率优化方法。测量硬件设备的工作电流，并从转换表中获得相应的工作电平。将获得的工作级别与当前执行的工作级别进行比较，以对硬件设备的各种参数和相应的散热装置的操作进行调整。因此，硬件设备可以实现更好的性能。

3. 发明申请

US20070172983A1 Three-dimensional package and method of making the same 审中-公开
标题翻译：三维包装及其制作方法
公开(公告)号：US20070172983A1
公开(公告)日：2007-07-26
申请号：US11645039
申请日：2006-12-26
申请人： Min-Lung Huang , Wei-Chung Wang , Po-Jen Cheng , Kuo-Chung Yee , Ching-Huei Su , Jian-Wen Lo , Chian-Chi Lin
发明人： Min-Lung Huang , Wei-Chung Wang , Po-Jen Cheng , Kuo-Chung Yee , Ching-Huei Su , Jian-Wen Lo , Chian-Chi Lin
IPC分类号： H01L21/00
CPC分类号： H01L21/76898 , H01L25/0657 , H01L25/50 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a three-dimensional package and a method of making the same. The three-dimensional package comprises a first wafer, at least one first hole, a first isolation layer, a first conductive layer, a first solder, a second wafer, at least one second hole, a second isolation layer, a second conductive layer, and a second solder. The first wafer has at least one first pad and a first protection layer exposing the first pad. The first hole penetrates the first wafer. The first isolation layer is disposed on the side wall of the first hole. The lower end of the first conductive layer extends below the surface of the first wafer. The first solder is disposed in the first hole, and is electrically connected to the first pad via the first conductive layer. The second wafer has at least one second pad and a second protection layer exposing the second pad. The second hole penetrates the second wafer. The second isolation layer is disposed on the side wall of the second hole. The lower end of the second conductive layer extends to below the surface of the second wafer and contacts the upper end of the first solder. The second solder is disposed in the second hole and is electrically connected to the second pad via the second conductive layer.
摘要翻译：本发明涉及三维包装及其制造方法。三维封装包括第一晶片，至少一个第一孔，第一隔离层，第一导电层，第一焊料，第二晶片，至少一个第二孔，第二隔离层，第二导电层，和第二焊料。第一晶片具有至少一个第一焊盘和暴露第一焊盘的第一保护层。第一个孔穿透第一个晶片。第一隔离层设置在第一孔的侧壁上。第一导电层的下端延伸到第一晶片的表面下方。第一焊料设置在第一孔中，并且经由第一导电层电连接到第一焊盘。第二晶片具有至少一个第二焊盘和暴露第二焊盘的第二保护层。第二孔穿透第二晶片。第二隔离层设置在第二孔的侧壁上。第二导电层的下端延伸到第二晶片的表面下方并接触第一焊料的上端。第二焊料设置在第二孔中，并通过第二导电层与第二焊盘电连接。

4. 发明申请

US20190165375A1 Electrolytic Doping of Non-Electrolyte Layers in Printed Batteries 审中-公开
公开(公告)号：US20190165375A1
公开(公告)日：2019-05-30
申请号：US16263711
申请日：2019-01-31
申请人： John Devin MacKenzie , Christine Chihfan Ho , Karthik Yogeeswaran , Po-Jen Cheng
发明人： John Devin MacKenzie , Christine Chihfan Ho , Karthik Yogeeswaran , Po-Jen Cheng
IPC分类号： H01M4/62 , H01M4/42 , H01M10/0585 , H01M4/04 , H01M4/1395 , H01M4/1391 , H01M10/0565 , H01M4/50 , H01M4/134 , H01M4/131 , H01M10/054
CPC分类号： H01M4/62 , H01M4/0402 , H01M4/06 , H01M4/13 , H01M4/131 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/42 , H01M4/502 , H01M6/40 , H01M10/052 , H01M10/054 , H01M10/0565 , H01M10/0567 , H01M10/0568 , H01M10/0585 , H01M12/06 , H01M2004/027 , H01M2004/028
摘要： An electrical or electrochemical cell, including a cathode layer, an electrolyte layer, and an anode layer is disclosed. The cathode layer includes a first material providing a cathodic electric transport, charge storage or redox function. The electrolyte layer includes a polymer, a first electrolyte salt, and/or an ionic liquid. The anode layer includes a second material providing an anodic electric transport, charge storage or redox function. At least one of the cathode and anode layers includes the ionic liquid, a second electrolyte salt, and/or a transport-enhancing additive.

5. 发明授权

US09276292B1 Electrolytic doping of non-electrolyte layers in printed batteries 有权
标题翻译：印刷电池中非电解质层的电解掺杂
公开(公告)号：US09276292B1
公开(公告)日：2016-03-01
申请号：US13844221
申请日：2013-03-15
申请人： John Devin MacKenzie , Christine Chihfan Ho , Karthik Yogeeswaran , Po-Jen Cheng
发明人： John Devin MacKenzie , Christine Chihfan Ho , Karthik Yogeeswaran , Po-Jen Cheng
IPC分类号： H01M10/04 , H01M10/40 , H01M2/14 , H01M2/16 , H01M10/0567 , H01M10/052 , H01M10/058
CPC分类号： H01M10/0567 , H01M4/06 , H01M4/13 , H01M4/62 , H01M6/40 , H01M10/052 , H01M10/0568 , H01M12/06
摘要： An electrical or electrochemical cell, including a cathode layer, an electrolyte layer, and an anode layer is disclosed. The cathode layer includes a first material providing a cathodic electric transport, charge storage or redox function. The electrolyte layer includes a polymer, a first electrolyte salt, and/or an ionic liquid, The anode layer includes a second material providing an anodic electric transport, charge storage or redox function. At least one of the cathode and anode layers includes the ionic liquid, a second electrolyte salt, and/or a transport-enhancing additive.
摘要翻译：公开了一种电气或电化学电池，包括阴极层，电解质层和阳极层。阴极层包括提供阴极电输送，电荷存储或氧化还原功能的第一材料。电解质层包括聚合物，第一电解质盐和/或离子液体。阳极层包括提供阳极电输送，电荷存储或氧化还原功能的第二材料。阴极和阳极层中的至少一个包括离子液体，第二电解质盐和/或输送增强添加剂。

6. 发明授权

US08288853B2 Three-dimensional package and method of making the same 有权
标题翻译：三维包装及其制作方法
公开(公告)号：US08288853B2
公开(公告)日：2012-10-16
申请号：US12615852
申请日：2009-11-10
申请人： Min-Lung Huang , Wei-Chung Wang , Po-Jen Cheng , Kuo-Chung Yee , Ching-Huei Su , Jian-Wen Lo , Chian-Chi Lin
发明人： Min-Lung Huang , Wei-Chung Wang , Po-Jen Cheng , Kuo-Chung Yee , Ching-Huei Su , Jian-Wen Lo , Chian-Chi Lin
IPC分类号： H01L23/02
CPC分类号： H01L25/0657 , H01L21/76898 , H01L25/50 , H01L2224/05001 , H01L2224/05022 , H01L2224/05024 , H01L2224/05548 , H01L2224/05647 , H01L2224/05666 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2224/05099
摘要： A package comprises a first unit including a semiconductor body, a hole, an isolation layer, a conductive layer and a solder. The semiconductor body has a first surface having a pad and a protection layer exposing the pad. The hole penetrates the semiconductor body. The isolation layer is disposed on the side wall of the hole. The conductive layer covers the pad, a part of the protection layer, and the isolation layer. The lower end of the conductive layer extends to below a second surface of the semiconductor body. The solder is disposed in the hole, and is electrically connected to the pad via the conductive layer. A second unit similar to the first unit and stacked thereon includes a lower end of a second conductive layer that extends to below a second surface of a second semiconductor body and contacts the upper end of the first solder.
摘要翻译：封装包括包括半导体本体，孔，隔离层，导电层和焊料的第一单元。半导体本体具有第一表面，其具有衬垫和暴露衬垫的保护层。孔穿透半导体本体。隔离层设置在孔的侧壁上。导电层覆盖焊盘，保护层的一部分和隔离层。导电层的下端延伸到半导体本体的第二表面的下方。焊料设置在孔中，并通过导电层与焊盘电连接。类似于第一单元并且堆叠在其上的第二单元包括延伸到第二半导体本体的第二表面下方并接触第一焊料的上端的第二导电层的下端。

7. 发明授权

US07863181B2 Method for manufacturing a device having a high aspect ratio via 有权
标题翻译：制造具有高纵横比的装置的方法
公开(公告)号：US07863181B2
公开(公告)日：2011-01-04
申请号：US12170138
申请日：2008-07-09
申请人： Hsueh An Yang , Po Jen Cheng
发明人： Hsueh An Yang , Po Jen Cheng
IPC分类号： H01L21/4763
CPC分类号： H01L21/0272 , H01L21/31144 , H01L21/32115 , H01L24/11 , H01L2224/05001 , H01L2224/05023 , H01L2224/05026 , H01L2224/051 , H01L2224/056 , H01L2924/14 , H01L2924/19041 , H01L2924/00014
摘要： Method for manufacturing a device having a conductive via includes the following steps. A dielectric material layer including a through hole is formed on a substrate. A seed metallic layer is formed on the dielectric material layer and in the through hole. A metallic layer is formed on the seed metallic layer, and is filled in the through hole. The metallic layer located over the seed metallic layer and outside the through hole is etched by a spin etching process, whereby the metallic layer located in the through hole is formed to a lower portion. An upper portion is formed on the lower portion, and a metallic trace is formed on the seed metallic layer, wherein the upper and lower portions is formed to a conductive via, and the conductive via and the metallic trace expose a part of the seed metallic layer. The exposed seed metallic layer is etched.
摘要翻译：具有导电通孔的装置的制造方法包括以下步骤。在基板上形成包括通孔的电介质材料层。在电介质材料层和通孔中形成种子金属层。在种子金属层上形成金属层，并填充在通孔中。通过旋转蚀刻工艺蚀刻位于种子金属层上方的金属层和通孔外部，由此将位于通孔中的金属层形成为下部。在下部形成上部，在种子金属层上形成金属线，其中上部和下部形成为导电通孔，并且导电通孔和金属迹线暴露出种子金属的一部分层。暴露的种子金属层被蚀刻。

8. 发明授权

US07642132B2 Three-dimensional package and method of making the same 有权
标题翻译：三维包装及其制作方法
公开(公告)号：US07642132B2
公开(公告)日：2010-01-05
申请号：US11584546
申请日：2006-10-23
申请人： Min-Lung Huang , Wei-Chung Wang , Po-Jen Cheng , Kuo-Chung Yee , Ching-Huei Su , Jian-Wen Lo , Chian-Chi Lin
发明人： Min-Lung Huang , Wei-Chung Wang , Po-Jen Cheng , Kuo-Chung Yee , Ching-Huei Su , Jian-Wen Lo , Chian-Chi Lin
IPC分类号： H01L21/44
CPC分类号： H01L25/0657 , H01L21/76898 , H01L25/50 , H01L2224/05001 , H01L2224/05022 , H01L2224/05024 , H01L2224/05548 , H01L2224/05647 , H01L2224/05666 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2224/05099
摘要： The present invention relates to a three-dimensional package and a method of making the same. The method comprises: (a) providing a semiconductor body; (b) forming at least one blind hole in the semiconductor body; (c) forming an isolation layer on the side wall of the blind hole; (d) forming a conductive layer on the isolation layer; (e) patterning the conductive layer; (f) removing a part of the lower surface of the semiconductor body and a part of the isolation layer, so as to expose a part of the conductive layer; (g) forming a solder on the lower end of the conductive layer; (h) stacking a plurality of the semiconductor bodies, and performing a reflow process; and (i) cutting the stacked semiconductor bodies, so as to form a plurality of three-dimensional packages. As such, the lower end of the conductive layer and the solder thereon are “inserted” into the space formed by the conductive layer of the lower semiconductor body, so as to enhance the joining between the conductive layer and the solder, and effectively reduce the overall height of the three-dimensional packages after joining.
摘要翻译：本发明涉及三维包装及其制造方法。该方法包括：（a）提供半导体本体; （b）在半导体本体中形成至少一个盲孔; （c）在盲孔的侧壁上形成隔离层; （d）在隔离层上形成导电层; （e）图案化导电层; （f）去除所述半导体主体的下表面的一部分和所述隔离层的一部分，以暴露所述导电层的一部分; （g）在导电层的下端形成焊料; （h）堆叠多个半导体体，进行回流处理; 和（i）切割堆叠的半导体本体，以便形成多个三维封装。因此，导电层的下端和其上的焊料被“插入”到由下半导体本体的导电层形成的空间中，以便增强导电层和焊料之间的接合，并且有效地减少加入后三维包装的整体高度。

9. 发明申请

US20090300849A1 METHOD OF EXTRACTING OIL OF CLOTH VIA SUPERCRITICAL FLUID 审中-公开
标题翻译：通过超临界流体萃取油的方法
公开(公告)号：US20090300849A1
公开(公告)日：2009-12-10
申请号：US12430317
申请日：2009-04-27
申请人： Po-Jen Cheng , Li-Hao Cheng , Chih-Huang Cheng
发明人： Po-Jen Cheng , Li-Hao Cheng , Chih-Huang Cheng
IPC分类号： B01D11/02 , D06L1/02
CPC分类号： D06L1/00 , D06L1/02
摘要： The present invention relates to a method of extracting oil of cloth via supercritical fluid, comprises the steps of: a cloth to be extracted is provided in an extracting tank; a gas is filled into a storing tank; a water-cooling machine is provided and served to cool down the temperature of the gas; a pump is provided and served to compress the gas; a water-heating machine is provided and served to raise the temperature of the gas so the gas becomes a supercritical fluid; and the supercritical fluid is inserted into the extracting tank for extracting the oil. By the above mentioned method, the cleanness of the cleanroom wiping cloth can be immediately sensed and obtained, and the gas can be recycled for achieving energy-saving.
摘要翻译：本发明涉及一种通过超临界流体提取布料的方法，包括以下步骤：提取罐中提取的布料; 将气体填充到储存罐中; 提供了一台水冷机，用来冷却气体的温度; 提供一个泵并用来压缩气体; 提供了一种水加热机，用于提高气体的温度，使气体成为超临界流体; 并将超临界流体插入提取罐中以提取油。通过上述方法，可以立即检测和获得洁净室擦拭布的清洁度，并且可以再循环气体以实现节能。

10. 发明授权

US07528053B2 Three-dimensional package and method of making the same 有权
标题翻译：三维包装及其制作方法
公开(公告)号：US07528053B2
公开(公告)日：2009-05-05
申请号：US11645042
申请日：2006-12-26
申请人： Min-Lung Huang , Wei-Chung Wang , Po-Jen Cheng , Kuo-Chung Yee , Ching-Huei Su , Jian-Wen Lo , Chian-Chi Lin
发明人： Min-Lung Huang , Wei-Chung Wang , Po-Jen Cheng , Kuo-Chung Yee , Ching-Huei Su , Jian-Wen Lo , Chian-Chi Lin
IPC分类号： H01L21/46 , H01L21/4763
CPC分类号： H01L25/0657 , H01L21/76898 , H01L25/50 , H01L2224/48145 , H01L2225/06506 , H01L2225/06524 , H01L2225/06541 , H01L2924/01019 , H01L2924/01078 , H01L2924/00012
摘要： A three-dimensional package and a method of making the same including providing a wafer; forming at least one blind hole in the wafer; forming an isolation layer on the side wall of the blind hole; forming a conductive layer on the isolation layer; forming a dry film on the conductive layer; filling the blind hole with metal; removing the dry film, and patterning the conductive layer; removing a part of the metal in the blind hole to form a space; removing a part of the second surface of the wafer and a part of the isolation layer, to expose a part of the conductive layer; forming a solder on the lower end of the conductive layer, the melting point of the solder is lower than the metal; stacking a plurality of the wafers, and performing a reflow process; and cutting the stacked wafers, to form three-dimensional packages.
摘要翻译：三维封装及其制造方法，包括提供晶片; 在晶片中形成至少一个盲孔; 在盲孔的侧壁上形成隔离层; 在隔离层上形成导电层; 在导电层上形成干膜; 用金属填充盲孔; 去除干膜，图案化导电层; 去除盲孔中的金属的一部分以形成空间; 去除所述晶片的所述第二表面的一部分和所述隔离层的一部分，以暴露所述导电层的一部分; 在导电层的下端形成焊料，焊料的熔点低于金属; 堆叠多个晶片，并进行回流处理; 并切割堆叠的晶片，以形成三维封装。

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