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1. 发明申请

US20080037857A1 Method of classifying directional defects on an object and apparatus for performing the same 审中-公开
标题翻译：将物体上的方向性缺陷分类的方法和用于执行其的装置
公开(公告)号：US20080037857A1
公开(公告)日：2008-02-14
申请号：US11739900
申请日：2007-04-25
申请人： Young-Kyu Lim , Byung-Am Lee , Je-Kwon Park , Jae-Kyun Ko , Kyu Lee , Kyoung-Hee Park
发明人： Young-Kyu Lim , Byung-Am Lee , Je-Kwon Park , Jae-Kyun Ko , Kyu Lee , Kyoung-Hee Park
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , G06T2207/30148
摘要： In a method of classifying directional defects on an object straight lines are drawn from any defect among all defects on the object toward adjacent defects. At least three defects that are positioned within an allowable angle from the straight lines are classified as directional defects. Thus, only the directional defects among all the defects on the semiconductor substrate may be accurately classified after performing a chemical mechanical polishing (CMP) process, so that the CMP process may be effectively managed.
摘要翻译：在对对象上的方向性缺陷进行分类的方法中，直线上的所有缺陷中的所有缺陷中的任何缺陷被绘制成相邻缺陷。位于距离直线允许的角度内的至少三个缺陷被归类为方向缺陷。因此，在进行化学机械抛光（CMP）工艺之后，可以将半导体衬底上的所有缺陷中的所有缺陷之间的定向缺陷精确地分类，从而可以有效地管理CMP工艺。

2. 发明申请

US20060013092A1 Method and apparatus for aligning a substrate, method and apparatus for inspecting a defect on a substrate using the aligning method and apparatus 审中-公开
标题翻译：用于对准衬底的方法和装置，用于使用对准方法和装置检查衬底上的缺陷的方法和装置
公开(公告)号：US20060013092A1
公开(公告)日：2006-01-19
申请号：US11177870
申请日：2005-07-08
申请人： Sung-Man Lee , Byung-Am Lee , Byung-Seol Ahn , Jae-Sun Cho , Chang-Hoon Lee , Young-Kyu Lim
发明人： Sung-Man Lee , Byung-Am Lee , Byung-Seol Ahn , Jae-Sun Cho , Chang-Hoon Lee , Young-Kyu Lim
IPC分类号： G11B7/00
CPC分类号： G01N21/95607
摘要： A method of aligning a substrate can comprise primarily aligning the substrate having a pattern, obtaining pattern information corresponding to a configuration of the pattern, comparing the pattern information with predetermined reference pattern information to corroborate the acceptability of the pattern information, selectively exchanging the predetermined reference pattern information with the pattern information based on the acceptability of the pattern information, and secondarily aligning the substrate to correlate the position of the pattern with the pattern information.
摘要翻译：对准衬底的方法可以包括主要对准具有图案的衬底，获得对应于图案的配置的图案信息，将图案信息与预定的参考图案信息进行比较，以证实图案信息的可接受性，选择性地交换预定的参考基于图案信息的可接受性的图案信息的图案信息，并且二次对准基板以将图案的位置与图案信息相关联。

3. 发明申请

US20060012782A1 Method and apparatus for classifying repetitive defects on a substrate 失效
标题翻译：在基板上分类重复缺陷的方法和装置
公开(公告)号：US20060012782A1
公开(公告)日：2006-01-19
申请号：US11181162
申请日：2005-07-13
申请人： Young-Kyu Lim , Byung-Am Lee , Byung-Seol Ahn , Jae-Sun Cho , Chang-Hoon Lee , Jung-Lan Lee , Sung-Man Lee
发明人： Young-Kyu Lim , Byung-Am Lee , Byung-Seol Ahn , Jae-Sun Cho , Chang-Hoon Lee , Jung-Lan Lee , Sung-Man Lee
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/95607
摘要： A method and apparatus of classifying repetitive defects on a substrate is provided. Defects of dies on the substrate are sequentially compared with a predetermined reference die. Sets of coordinates are marked on the reference die which are corresponding to the position of the defects on the dies on the substrate. Then, repetitive defects are classified which are repeatedly marked in a specified region on the reference die.
摘要翻译：提供了在基板上分类重复缺陷的方法和装置。将衬底上的裸片的缺陷与预定的参考裸片顺序地进行比较。在基准管芯上标记坐标集合，其对应于衬底上的管芯上的缺陷的位置。然后，在参考芯片上的指定区域中重复地标记重复缺陷。

4. 发明申请

US20050127293A1 Auto focusing apparatus and method 有权
标题翻译：自动对焦装置及方法
公开(公告)号：US20050127293A1
公开(公告)日：2005-06-16
申请号：US10959174
申请日：2004-10-07
申请人： Young-Wan Kim , Sang-Kil Lee , Byung-Am Lee , Jin-Woo Lee , Hyo-Sang Cho
发明人： Young-Wan Kim , Sang-Kil Lee , Byung-Am Lee , Jin-Woo Lee , Hyo-Sang Cho
IPC分类号： H01L21/66 , G01N23/00 , G03B27/34 , G03F7/207 , H01J37/21 , H01J37/28 , H01L21/027
CPC分类号： H01J37/21 , H01J2237/216
摘要： An auto focusing method and apparatus for quantifying a focusing average value, comparing the focusing average value with an acceptance level of a preset focusing evaluation value, and iteratively focusing, while widening the depth of focus, when the focusing average value is lower than the acceptance level.
摘要翻译：一种自动对焦方法和装置，用于量化聚焦平均值，将聚焦平均值与预设聚焦评估值的接受水平进行比较，并且在聚焦平均值低于接受度的同时，在加深焦深的同时进行迭代聚焦水平。

5. 发明申请

US20050009214A1 Method for aligning a wafer and apparatus for performing the same 失效
标题翻译：用于对准晶片的方法和用于执行该晶片的装置
公开(公告)号：US20050009214A1
公开(公告)日：2005-01-13
申请号：US10883711
申请日：2004-07-06
申请人： Kyu-Hong Lim , Byung-Am Lee , Joo-Woo Kim , Chang-Hoon Lee
发明人： Kyu-Hong Lim , Byung-Am Lee , Joo-Woo Kim , Chang-Hoon Lee
IPC分类号： H01L21/027 , G03F7/20 , G03F9/00 , H01L21/00 , H01L21/76
CPC分类号： G03F9/7092 , G03F7/70616
摘要： In a method of aligning a wafer, which is capable of precisely and rapidly aligning the wafer, and a wafer alignment apparatus using the method of aligning the wafer, a first wafer is aligned to form a first template pattern corresponding to an image of the first wafer. Image data of a second wafer is inputted. A kind of the second wafer is different from that of the first wafer. A second template pattern is formed by transforming the first template pattern in response to the image data of the second wafer. The second wafer is then aligned in response to the second template pattern. Accordingly, the template pattern is formed using the image data to align the wafer although wafers having different images are inspected, thereby rapidly forming the template pattern.
摘要翻译：在使用能够精确且快速地对准晶片的晶片和使用对准晶片的方法的晶片对准装置的对准方法中，对准第一晶片以形成对应于第一晶片的图像的第一模板图案晶圆。输入第二晶片的图像数据。一种第二晶片与第一晶片不同。通过响应于第二晶片的图像数据变换第一模板图案来形成第二模板图案。然后响应于第二模板图案对准第二晶片。因此，使用图像数据形成模板图案，以对晶片进行对准，尽管检查具有不同图像的晶片，从而快速形成模板图案。

6. 发明授权

US06449037B2 Method of and device for detecting micro-scratches 有权
标题翻译：检测微划痕的方法和装置
公开(公告)号：US06449037B2
公开(公告)日：2002-09-10
申请号：US09864398
申请日：2001-05-25
申请人： Chung-sam Jun , Sang-mun Chon , Sang-bong Choi , Hyung-suk Cho , Pil-sik Hyun , Kyu-hong Lim , Byung-am Lee
发明人： Chung-sam Jun , Sang-mun Chon , Sang-bong Choi , Hyung-suk Cho , Pil-sik Hyun , Kyu-hong Lim , Byung-am Lee
IPC分类号： G01N2100
CPC分类号： G01N21/21
摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.
摘要翻译：方法和装置检测在晶片表面存在缺陷，即微划痕。光在晶片的表面上的介质上被投射到光不被可能位于介质下方的另一层反射的角度。由晶片表面反射的光被转换为电信号，但是由于表面散射的任何光被尽可能地排除，从而有助于信号的形成。电信号对应于从晶片表面反射的光的强度。当光在晶片上扫描时，将电信号的值进行比较，以确定介质中是否存在缺陷。因为投射到晶片表面上的光将被诸如微划痕的缺陷所散射，所以可以成功监测晶片是否存在这种微划痕。特别地，可以检测到在介质中形成的微划痕的缺陷，而不管诸如图案层的介质之下的结构如何。

7. 发明授权

US5953579A In-line test of contact opening of semiconductor device 失效
标题翻译：半导体器件接触开口的在线测试
公开(公告)号：US5953579A
公开(公告)日：1999-09-14
申请号：US902107
申请日：1997-07-29
申请人： Sang-kil Lee , Byung-am Lee , Kyoung-mo Yang
发明人： Sang-kil Lee , Byung-am Lee , Kyoung-mo Yang
IPC分类号： G01N1/32 , G01Q30/02 , G01Q30/06 , G01R31/307 , H01L21/66 , G01R31/26 , G01N23/00 , G21K7/00
CPC分类号： H01L22/20 , G01R31/307 , H01L22/12
摘要： A method for testing a contact opening of a semiconductor device includes the steps of: inspecting a wafer using an in-line scanning electron microscope, comparing a contrast difference of contact opening regions displayed on the scanning electron microscope, and determining whether the processes for forming the contact openings have been performed correctly based on results of the comparison step. The test method may be performed after any of a contact photolithography process, contact etching process, or conductive layer etching process.
摘要翻译：一种用于测试半导体器件的接触开口的方法包括以下步骤：使用在线扫描电子显微镜检查晶片，比较扫描电子显微镜上显示的接触开口区域的对比度差异，以及确定是否形成基于比较步骤的结果已经正确地执行了接触开口。测试方法可以在接触光刻工艺，接触蚀刻工艺或导电层蚀刻工艺中进行之后进行。

8. 发明申请

US20080237461A1 Autofocus method in a scanning electron microscope 审中-公开
标题翻译：自动对焦法在扫描电子显微镜下
公开(公告)号：US20080237461A1
公开(公告)日：2008-10-02
申请号：US12079166
申请日：2008-03-25
申请人： Jong-Deok Kim , Byung-Am Lee , Kyung-Ho Kim , Byung-Seol Ahn , Young-Hun Park , Kong-Jung Sa
发明人： Jong-Deok Kim , Byung-Am Lee , Kyung-Ho Kim , Byung-Seol Ahn , Young-Hun Park , Kong-Jung Sa
IPC分类号： G21K7/00
CPC分类号： H01J37/21 , H01J37/222 , H01J37/28 , H01J2237/216
摘要： In an autofocus method, an electron beam is scanned onto a subject through a condensing member. A setting condition of the condensing member is changed within a first range. An image evaluation value is measured using a secondary electron current from the subject according to the setting condition within the first range. A second range adjacent to the first range and including the setting condition corresponding to the first maximum is set when a first maximum of the image evaluation value is not a peak value. The setting condition is changed within the second range. An image evaluation value is measured using a secondary electron current according to the setting condition within the second range. The condensing member is set with the setting condition corresponding to a second maximum of the image evaluation value when the second maximum value is the peak value.
摘要翻译：在自动聚焦方法中，电子束通过聚光部件被扫描到被摄体上。聚光部件的设定状态在第一范围内变化。根据第一范围内的设定条件，使用来自被检体的二次电子流测定图像评价值。当图像评估值的第一最大值不是峰值时，设置与第一范围相邻并且包括与第一最大值相对应的设置条件的第二范围。设定条件在第二范围内变化。根据第二范围内的设定条件，使用二次电子电流测定图像评价值。当第二最大值是峰值时，聚光构件被设置为与图像评估值的第二最大值相对应的设置条件。

9. 发明授权

US07205543B2 Auto focusing apparatus and method 有权
标题翻译：自动对焦装置及方法
公开(公告)号：US07205543B2
公开(公告)日：2007-04-17
申请号：US10959174
申请日：2004-10-07
申请人： Yong-Wan Kim , Sang-Kil Lee , Byung-Am Lee , Jin-Woo Lee , Hyo-Sang Cho
发明人： Yong-Wan Kim , Sang-Kil Lee , Byung-Am Lee , Jin-Woo Lee , Hyo-Sang Cho
IPC分类号： G01N23/00
CPC分类号： H01J37/21 , H01J2237/216
摘要： An auto focusing method and apparatus for determining a focusing evaluation value, comparing the focusing evaluation value with an acceptance level of a preset focusing evaluation value, and iteratively focusing, while widening the depth of focus, when the focusing evaluation value is lower than the acceptance level.
摘要翻译：一种自动聚焦方法和装置，用于确定聚焦评价值，将聚焦评价值与预设聚焦评价值的接受水平进行比较，并且在聚焦评价值低于接受度的同时，在扩大聚焦深度的同时进行反复聚焦水平。

10. 发明申请

US20070031982A1 Method of classifying defects and apparatus for performing the method 审中-公开
标题翻译：分类缺陷的方法和执行该方法的装置
公开(公告)号：US20070031982A1
公开(公告)日：2007-02-08
申请号：US11462305
申请日：2006-08-03
申请人： Young-Kyu Lim , Byung-Am Lee , Jae-Kyun Ko , Song-Sik Lim , Young-Woo Lee
发明人： Young-Kyu Lim , Byung-Am Lee , Jae-Kyun Ko , Song-Sik Lim , Young-Woo Lee
IPC分类号： H01L21/66 , G01N21/00
CPC分类号： G01N21/9501 , G01N21/94 , G01N2021/8854
摘要： In a method of classifying defects, actual information with respect to actual defects by each of processes on an object on which the processes are sequentially carried out is obtained. The actual information is accumulated in sequence of the processes to obtain composite information by each of the processes with respect to entire defects that are generated in preceding processes. Added information with respect to defects, which are generated only in each of the processes, among the actual defects is obtained by each of the processes based on the actual information and the composite information. The added information contains information with respect to the defects generated only in each of the processes so that the detected defects may be accurately classified as defects generated in any one among the processes based on the added information.
摘要翻译：在对缺陷进行分类的方法中，获得关于依次进行处理的对象上的各处理的实际缺陷的实际信息。按照前述处理中生成的全部缺陷，通过每个处理获得复合信息的处理顺序累积实际信息。通过基于实际信息和复合信息的每个处理获得关于在实际缺陷中仅在每个处理中生成的缺陷的信息。添加的信息包含关于仅在每个处理中产生的缺陷的信息，使得检测到的缺陷可以被准确地分类为基于添加的信息的处理中的任一个中产生的缺陷。

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