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    • 1. 发明申请
    • METHOD AND APPARATUS FOR PROGRAMMING AUTO SHUT-OFF
    • 用于编程自动关机的方法和装置
    • US20100054048A1
    • 2010-03-04
    • US12202048
    • 2008-08-29
    • Pearl P. ChengHarry S. LuanChinh VoChih-Chieh (Steve) Wang
    • Pearl P. ChengHarry S. LuanChinh VoChih-Chieh (Steve) Wang
    • G11C7/00
    • G11C16/3468G11C16/28G11C16/3481
    • A method and system for enabling auto shut-off of programming of a non-volatile memory cell is disclosed. The system includes a memory array having a plurality of memory cells, each cell storing one bit of data. During the programming process, programming signals are applied to the target memory cells. A predefined period of time after the programming signals are applied, the auto shut-off system begins sensing an output signal from the memory cell. After the system detects an output signal from the memory cell, the system waits for a second predefined period of time before turning off the programming voltages. The system may be configured to sense an output voltage from the memory cell. The system then compares the output voltage to a reference voltage in order to detect when the cell is programmed. Alternatively, the system may sense an output current from the memory cell. The system then compares the output current to a reference current to detect when the cell is programmed.
    • 公开了一种能够自动关闭非易失性存储器单元的编程的方法和系统。 该系统包括具有多个存储单元的存储器阵列,每个单元存储一位数据。 在编程过程中,编程信号被施加到目标存储器单元。 在施加编程信号之后的预定义时间段中,自动关闭系统开始感测来自存储器单元的输出信号。 在系统检测到来自存储器单元的输出信号之后,系统在关闭编程电压之前等待第二预定时间段。 系统可以被配置为感测来自存储器单元的输出电压。 然后,系统将输出电压与参考电压进行比较,以便检测电池何时被编程。 或者,系统可以感测来自存储器单元的输出电流。 然后,系统将输出电流与参考电流进行比较,以检测电池何时被编程。
    • 2. 发明授权
    • Memories with burst mode access
    • 具有突发模式访问的记忆
    • US5559990A
    • 1996-09-24
    • US328337
    • 1994-10-24
    • Pearl P. ChengMichael S. BrinerJames C. Yu
    • Pearl P. ChengMichael S. BrinerJames C. Yu
    • G06F12/04G11C7/10G06F12/00
    • G06F12/04G11C7/1018Y02B60/1225
    • To provide a boundaryless burst mode access, a memory array is divided into two or more subarrays. Each subarray has its own row and column decoders. The columns of each subarray are divided into groups. A sense amplifier circuit is provided for each group of columns. The column decoder of each subarray selects simultaneously one column from each group so that the memory locations in one row in the selected columns have consecutive addresses. The memory locations in the selected row and columns are read by the sense amplifier circuits. While the contents of the sense amplifier circuits of one subarray are transferred one by one to the memory output, consecutive memory locations of another subarray are read to the sense amplifier circuits. In some embodiments, to save power, sense amplifier circuits are disabled when their outputs are not transferred to the memory output.
    • 为了提供无边界突发模式访问,存储器阵列被分成两个或更多个子阵列。 每个子阵列都有自己的行和列解码器。 每个子阵列的列分为几组。 为每组列提供读出放大器电路。 每个子阵列的列解码器同时选择来自每个组的一列,使得所选列中的一行中的存储器位置具有连续的地址。 所选行和列中的存储器位置由读出放大器电路读取。 虽然一个子阵列的读出放大器电路的内容一个接一个地传送到存储器输出,另一个子阵列的连续的存储器位置被读取到读出放大器电路。 在一些实施例中,为了节省功率,当它们的输出不被传送到存储器输出时,读出放大器电路被禁止。
    • 3. 发明授权
    • Method and apparatus for programming auto shut-off
    • 用于编程自动切断的方法和装置
    • US08116145B2
    • 2012-02-14
    • US12202048
    • 2008-08-29
    • Pearl P. ChengHarry S. LuanChinh VoChih-Chieh (Steve) Wang
    • Pearl P. ChengHarry S. LuanChinh VoChih-Chieh (Steve) Wang
    • G11C7/00
    • G11C16/3468G11C16/28G11C16/3481
    • A method and system for enabling auto shut-off of programming of a non-volatile memory cell is disclosed. The system includes a memory array having a plurality of memory cells, each cell storing one bit of data. During the programming process, programming signals are applied to the target memory cells. A predefined period of time after the programming signals are applied, the auto shut-off system begins sensing an output signal from the memory cell. After the system detects an output signal from the memory cell, the system waits for a second predefined period of time before turning off the programming voltages. The system may be configured to sense an output voltage from the memory cell. The system then compares the output voltage to a reference voltage in order to detect when the cell is programmed. Alternatively, the system may sense an output current from the memory cell. The system then compares the output current to a reference current to detect when the cell is programmed.
    • 公开了一种能够自动关闭非易失性存储器单元的编程的方法和系统。 该系统包括具有多个存储单元的存储器阵列,每个单元存储一位数据。 在编程过程中,编程信号被施加到目标存储器单元。 在施加编程信号之后的预定义时间段中,自动关闭系统开始感测来自存储器单元的输出信号。 在系统检测到来自存储器单元的输出信号之后,系统在关闭编程电压之前等待第二预定时间段。 系统可以被配置为感测来自存储器单元的输出电压。 然后,系统将输出电压与参考电压进行比较,以便检测电池何时被编程。 或者,系统可以感测来自存储器单元的输出电流。 然后,系统将输出电流与参考电流进行比较,以检测电池何时被编程。