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1. 发明授权

US4676868A Method for planarizing semiconductor substrates 失效
标题翻译：半导体衬底平面化方法
公开(公告)号：US4676868A
公开(公告)日：1987-06-30
申请号：US855207
申请日：1986-04-23
申请人： Paul E. Riley , Alan B. Ray , Paul Bayer
发明人： Paul E. Riley , Alan B. Ray , Paul Bayer
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3105 , H01L21/311 , H01L21/3205 , H01L21/768 , B44C1/22 , B29C37/00 , C03C15/00 , C03C25/06
CPC分类号： H01L21/76819 , H01L21/31055 , H01L21/31116
摘要： A method for planarizing an insulating layer overlying an irregular topographic substrate, e.g., a conductive layer, is planarized by use of a sacrificial planarization layer. The planarization layer is removed using an oxygen-containing plasma generated in a parallel electrode reactor operating at a low excitation frequency and high pressure. Once the interface between the planarization layer and the conductive layer is reached, a second plasma with a reduced oxygen content is employed to avoid overetching the planarization layer. It has been observed that oxidizing species liberated during the etching of the insulating layer, typically silicon dioxide, contribute to the oxidation and hence removal of the planarization layer. The process may be monitored by observing the spectral emissions from species generated or consumed during planarization or by changes in the optical interference pattern, allowing termination of the etch at the proper time to avoid over-etching and under-etching of the insulating layer.
摘要翻译：通过使用牺牲平坦化平面化用于平坦化覆盖不规则形状衬底（例如导电层）的绝缘层的方法。使用在低激发频率和高压下工作的并联电极反应器中产生的含氧等离子体来除去平坦化层。一旦达到平坦化层和导电层之间的界面，则采用具有降低的氧含量的第二等离子体来避免过刻蚀平坦化层。已经观察到，在绝缘层（通常是二氧化硅）的蚀刻期间释放的氧化物质有助于氧化并因此去除平坦化层。可以通过观察在平坦化期间产生或消耗的物质的光谱发射或通过光学干涉图案的变化来监测该过程，从而允许在适当时间终止蚀刻，以避免绝缘层的过蚀刻和蚀刻不足。

2. 发明授权

US4839311A Etch back detection 失效
标题翻译：蚀刻回检测
公开(公告)号：US4839311A
公开(公告)日：1989-06-13
申请号：US275655
申请日：1988-11-21
申请人： Paul E. Riley , Vivek D. Kulkarni , Egil D. Castel
发明人： Paul E. Riley , Vivek D. Kulkarni , Egil D. Castel
IPC分类号： C23F4/00 , H01L21/3105 , H01L21/3213 , H01L21/66 , H01L21/768
CPC分类号： B24B37/013 , C23F4/00 , H01L21/31055 , H01L21/32136 , H01L21/76801 , H01L21/76819 , H01L21/76834 , H01L22/26
摘要： An improved method for the etch-back planarization of interlevel dielectric layers provides for cessation of the etch-back upon exposure of an indicator layer. the indicator layer, usually a metal, metal nitride, or silicon nitride is formed either within the dielectric or over an underlying metallization layer prior to patterning by conventional photolithographic techniques. A sacrificial layer, typically an organic photoresist, is then formed over the dielectric layer. Because of the presence of both relatively narrow and relatively broad features in the metallization, the thickness of the sacrificial layer will vary over features having different widths. As etch back planarization proceeds, the indicator layer which is first encountered releases detectable species into the planarization reactor. Detection of these species indicates that removal of the overlying dielectric layers to a predetermined depth is achieved. By placing the detectable layer over only those regions which are expected to be exposed last, the method can be utilized to indicate the end point of etch back planarization of the interlevel dielectric.
摘要翻译：用于层间电介质层的回蚀刻平面化的改进方法提供了在指示层曝光时停止蚀刻。在通过常规光刻技术进行图案化之前，通常在电介质内或在下面的金属化层上形成指示剂层，通常为金属，金属氮化物或氮化硅。然后在电介质层上形成牺牲层，通常为有机光致抗蚀剂。由于在金属化中存在相对窄且相对宽的特征，牺牲层的厚度将随着具有不同宽度的特征而变化。随着回蚀刻平面化，首先遇到的指示层将可检测物质释放到平坦化反应器中。这些物质的检测表明，实现了将上覆电介质层去除到预定深度。通过将可检测层放置在预期最后暴露的那些区域上，该方法可以用于指示层间电介质的回蚀刻平面化的终点。

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