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1. 发明授权

US4676868A Method for planarizing semiconductor substrates 失效
标题翻译：半导体衬底平面化方法
公开(公告)号：US4676868A
公开(公告)日：1987-06-30
申请号：US855207
申请日：1986-04-23
申请人： Paul E. Riley , Alan B. Ray , Paul Bayer
发明人： Paul E. Riley , Alan B. Ray , Paul Bayer
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3105 , H01L21/311 , H01L21/3205 , H01L21/768 , B44C1/22 , B29C37/00 , C03C15/00 , C03C25/06
CPC分类号： H01L21/76819 , H01L21/31055 , H01L21/31116
摘要： A method for planarizing an insulating layer overlying an irregular topographic substrate, e.g., a conductive layer, is planarized by use of a sacrificial planarization layer. The planarization layer is removed using an oxygen-containing plasma generated in a parallel electrode reactor operating at a low excitation frequency and high pressure. Once the interface between the planarization layer and the conductive layer is reached, a second plasma with a reduced oxygen content is employed to avoid overetching the planarization layer. It has been observed that oxidizing species liberated during the etching of the insulating layer, typically silicon dioxide, contribute to the oxidation and hence removal of the planarization layer. The process may be monitored by observing the spectral emissions from species generated or consumed during planarization or by changes in the optical interference pattern, allowing termination of the etch at the proper time to avoid over-etching and under-etching of the insulating layer.
摘要翻译：通过使用牺牲平坦化平面化用于平坦化覆盖不规则形状衬底（例如导电层）的绝缘层的方法。使用在低激发频率和高压下工作的并联电极反应器中产生的含氧等离子体来除去平坦化层。一旦达到平坦化层和导电层之间的界面，则采用具有降低的氧含量的第二等离子体来避免过刻蚀平坦化层。已经观察到，在绝缘层（通常是二氧化硅）的蚀刻期间释放的氧化物质有助于氧化并因此去除平坦化层。可以通过观察在平坦化期间产生或消耗的物质的光谱发射或通过光学干涉图案的变化来监测该过程，从而允许在适当时间终止蚀刻，以避免绝缘层的过蚀刻和蚀刻不足。

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