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1. 发明申请

US20120243311A1 Non-Sequential Encoding Scheme for Multi-Level Cell (MLC) Memory Cells 有权
标题翻译：用于多级单元（MLC）存储单元的非顺序编码方案
公开(公告)号：US20120243311A1
公开(公告)日：2012-09-27
申请号：US13070021
申请日：2011-03-23
申请人： Yiran Chen , Dadi Setiadi , Patrick J. Ryan
发明人： Yiran Chen , Dadi Setiadi , Patrick J. Ryan
IPC分类号： G11C16/04 , G11C11/14
CPC分类号： G11C11/161 , G11C7/1006 , G11C11/5607 , G11C11/5628 , G11C16/0483 , G11C2211/5648
摘要： Apparatus and method for managing an array of multi-level cell (MLC) memory cells. In accordance with various embodiments, a non-sequential encoding scheme is selected that assigns a different multi-bit logical value to each of a plurality of available physical states of a selected MLC memory cell in relation to write effort associated with each of said plurality of physical states. Data are thereafter written to the selected MLC memory cell in relation to the selected non-sequential encoding scheme. In some embodiments, the MLC memory cell comprises a spin-torque transfer random access memory (STRAM) memory cell. In other embodiments, the MLC memory cell comprises an MLC flash memory cell.
摘要翻译：用于管理多层单元（MLC）存储单元阵列的装置和方法。根据各种实施例，选择非顺序编码方案，其相对于与所述多个存储器单元中的每一个相关联的写入功率，将所选择的MLC存储器单元的多个可用物理状态中的每一个分配给不同的多位逻辑值物理状态相关于所选择的非顺序编码方案，数据被写入所选择的MLC存储器单元。在一些实施例中，MLC存储器单元包括自旋转矩传递随机存取存储器（STRAM）存储器单元。在其他实施例中，MLC存储器单元包括MLC闪存单元。

2. 发明申请

US20110230827A1 MIXING DEVICE FOR A TWO-CHAMBER AMPOULE 有权
标题翻译：用于两个室的混合装置
公开(公告)号：US20110230827A1
公开(公告)日：2011-09-22
申请号：US12951637
申请日：2010-11-22
申请人： Kevin Mori , Céline Kaenel , Annette Drunk , Jürg Hirschel , Ulrich Moser , Markus Tschirren , Martin Wymann , Scott Harris , Patrick J. Ryan , Andrew D. Pidgeon , Jonathan D. Tuckwell , Richard Mann
发明人： Kevin Mori , Céline Kaenel , Annette Drunk , Jürg Hirschel , Ulrich Moser , Markus Tschirren , Martin Wymann , Scott Harris , Patrick J. Ryan , Andrew D. Pidgeon , Jonathan D. Tuckwell , Richard Mann
IPC分类号： A61M5/00
CPC分类号： A61M5/24 , A61M5/2448 , A61M5/2466 , A61M5/3202 , A61M5/329 , A61M5/3293 , A61M5/34 , A61M5/46 , A61M2005/2411 , A61M2205/581 , A61M2205/582 , A61M2205/584
摘要： A device for administering a product (e.g. a medicinal or therapeutic substance), the device including a receptacle for the product or constituents of the product and a casing, wherein the receptacle and casing are engaged, and an outer sleeve, wherein the casing can be moved relative to the receptacle into the outer sleeve.
摘要翻译：一种用于施用产品（例如药用或治疗物质）的装置，所述装置包括用于产品或产品的成分的容器和壳体，其中所述容器和壳体接合，以及外套筒，其中所述壳体可以相对于容器移动到外套筒中。

3. 发明申请

US20110075472A1 MAGNETORESISTIVE DEVICE HAVING SPECULAR SIDEWALL LAYERS 有权
标题翻译：具有典型面板层的磁性装置
公开(公告)号：US20110075472A1
公开(公告)日：2011-03-31
申请号：US12963380
申请日：2010-12-08
申请人： Song S. Xue , Paul E. Anderson , Michael C. Kautzky , Xuefei Tang , Patrick J. Ryan
发明人： Song S. Xue , Paul E. Anderson , Michael C. Kautzky , Xuefei Tang , Patrick J. Ryan
IPC分类号： G11C11/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall.
摘要翻译：多层磁阻器件包括位于至少一个侧壁上的镜面层和位于镜面层与侧壁之间的铜层。

4. 发明授权

US06878895B1 Reticle sorter 有权
标题翻译：标线分选机
公开(公告)号：US06878895B1
公开(公告)日：2005-04-12
申请号：US09383508
申请日：1999-08-26
申请人： Patrick J. Ryan , Michael R. Conboy , Stephen P. Hovestol
发明人： Patrick J. Ryan , Michael R. Conboy , Stephen P. Hovestol
IPC分类号： B07C5/344
CPC分类号： B07C5/344 , Y10S209/939
摘要： A reticle sorter and a semiconductor fabrication facility employing one or more reticle sorters is provided. The reticle sorter(s) generally lies between a reticle storage system and a group of one or more photolithography exposure tools (e.g., steppers) and is configured for sorting reticles in one or more cassettes. The use of the reticle sorter provides sorting functionality apart from the reticle storage system and typically closer to the group of photolithography steppers with which it is associated. This can, for example, significantly increase the throughput of semiconductor wafers through the associated photolithography exposure tools as well as in the semiconductor fabrication plant as a whole.
摘要翻译：提供了采用一个或多个掩模版分拣机的掩模版分拣机和半导体制造设备。掩模版分选机通常位于掩模版存储系统和一组一个或多个光刻曝光工具（例如步进器）之间，并且被配置用于将一个或多个盒中的掩模版分类。标线分类器的使用提供了除了掩模版存储系统之外的分类功能，并且通常更接近与其相关联的光刻步进组。例如，这可以通过相关的光刻曝光工具以及整个半导体制造工厂显着提高半导体晶片的生产量。

5. 发明授权

US06449522B1 Managing a semiconductor fabrication facility using wafer lot and cassette attributes 有权
标题翻译：使用晶圆批次和磁带属性管理半导体制造设备
公开(公告)号：US06449522B1
公开(公告)日：2002-09-10
申请号：US09193349
申请日：1998-11-17
申请人： Michael R. Conboy , Patrick J. Ryan , Elfido Coss, Jr.
发明人： Michael R. Conboy , Patrick J. Ryan , Elfido Coss, Jr.
IPC分类号： G06F1900
CPC分类号： H01L21/67294 , H01L21/67276 , Y10S414/135 , Y10S414/137 , Y10S414/14
摘要： Systems and methods for managing automated material handling systems, such as semiconductor fabrication facilities, using material item (e.g., wafer lot) attributes and cassette attributes are provided. A semiconductor fabrication facility typically includes multiple wafer lots and multiple cassettes for storing the wafer lots. A system and method, in one embodiment of the invention, includes setting one or more lot attributes for each wafer lot, setting one or more cassette attributes for each cassette, and selecting a particular cassette for holding a particular wafer lot based on the one or more wafer lot attributes of the particular wafer lot and the one or more cassette attributes of the particular cassette. The wafer lot and cassette attributes may, for example, include an attribute identifying a position in a fabrication sequence and one or more attributes indicative of one or more contaminants. By selecting cassettes in this manner, wafer lots and cassettes may, for example, be classified or logically zoned.
摘要翻译：提供了用于管理自动化材料处理系统的系统和方法，例如半导体制造设施，使用材料项目（例如，晶片块）属性和盒子属性。半导体制造设备通常包括多个晶片批次和用于存储晶片批次的多个盒。在本发明的一个实施例中的系统和方法包括设置每个晶片批次的一个或多个批次属性，为每个盒设置一个或多个盒属性，并且基于该一个或多个盒子选择用于保持特定晶片批次的特定盒特定晶片批次的更多晶片批次属性和特定盒的一个或多个盒属性。晶片块和盒属性可以例如包括识别制造序列中的位置的属性和指示一种或多种污染物的一个或多个属性。通过以这种方式选择盒式磁带，可以对晶片批次和磁带盒进行分类或逻辑划分。

6. 发明授权

US06351357B1 Laminated hard magnet in MR sensor 失效
标题翻译： MR传感器中的层叠硬磁体
公开(公告)号：US06351357B1
公开(公告)日：2002-02-26
申请号：US09665782
申请日：2000-09-20
申请人： Song Sheng Xue , James F. Dolejsi , Patrick J. Ryan
发明人： Song Sheng Xue , James F. Dolejsi , Patrick J. Ryan
IPC分类号： G11B539
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932
摘要： A magneto-resistive sensor has a magneto-resistive element with an active area with an electrical resistance sensitive to changes in magnetic flux. Two hard magnets on opposing sides of the magneto-resistive element magnetically bias the magneto-resistive element. Each hard magnet includes a seed layer of a soft magnetic, electrically conductive material between two magnet layers of a hard magnetic, electrically conductive material laminated longitudinally together such that the seed layer and the magnet layers exhibit unified magnetic properties. The seed layer is preferably an amorphous material such as nitrided sendust. The laminated structure allows for a thicker magnet structure with low electrical resistance but without degradation of magnetic properties due to the increased thickness.
摘要翻译：磁阻传感器具有磁阻元件，其具有对磁通量变化敏感的电阻的有源区域。磁阻元件的相对侧上的两个硬磁体磁偏置磁阻元件。每个硬磁体包括在纵向一体层叠的硬磁导电材料的两个磁体层之间的软磁导电材料的种子层，使得晶种层和磁体层表现出统一的磁性。种子层优选为无定形材料，例如氮化硅铝石。层压结构允许具有低电阻的较厚的磁体结构，但由于增加的厚度而不降低磁性能。

7. 发明授权

US06235342B1 Method of fabricating a magnetoresistive read sensor 有权
标题翻译：制造磁阻读取传感器的方法
公开(公告)号：US06235342B1
公开(公告)日：2001-05-22
申请号：US09651238
申请日：2000-08-30
申请人： Song Sheng Xue , Patrick J. Ryan , James F. Dolejsi
发明人： Song Sheng Xue , Patrick J. Ryan , James F. Dolejsi
IPC分类号： B05D512
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3932
摘要： An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions. A second mask (134) is positioned over the active region (122) of the sensor and a second hard-biasing material (110) is deposited onto the soft adjacent layer (120) in the first passive region (124) and the second passive region (126). The second mask (134) is removed and contacts (112, 114) are positioned onto the second hard-biasing material (110).
摘要翻译：公开了改进的磁阻读取传感器（100）和制造消除膜去除的磁阻读取传感器（100）的方法。通过将第一掩模（128）定位在由于后续层分裂成三个区域的间隙层（104）上而形成磁阻传感器（100）。第一掩模（128）位于间隙层（104）的中心区域上，并且第一硬偏压材料（106）沉积在间隙层（104）的外部区域上。去除第一掩模（128）并且将磁阻元件（116）沉积到第一硬偏压材料（106）的外部区域和间隙层（104）的中心区域上，由此形成有源区域（122），磁阻传感器（100）的第一无源区（124）和第二无源区（126）。在所有三个区域中，隔离层（118）沉积到磁阻元件（116）上，并且在所有三个区域中将软相邻层（120）沉积到间隔层（118）上。第二掩模（134）被定位在传感器的有源区域（122）上方，并且第二硬偏压材料（110）沉积在第一无源区域（124）中的软相邻层（120）上，并且第二被动区域（126）。移除第二掩模（134）并将触头（112,114）定位在第二硬偏置材料（110）上。

8. 发明授权

US06229678B1 Magnetoresistive read sensor 失效
标题翻译：磁阻读取传感器
公开(公告)号：US06229678B1
公开(公告)日：2001-05-08
申请号：US09011631
申请日：1999-01-07
申请人： Song Sheng Xue , Patrick J. Ryan , James F. Dolejsi
发明人： Song Sheng Xue , Patrick J. Ryan , James F. Dolejsi
IPC分类号： G11B5139
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3932
摘要： An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions. A second mask (134) is positioned over the active region (122) of the sensor and a second hard-biasing material (110) is deposited onto the soft adjacent layer (120) in the first passive region (124) and the second passive region (126). The second mask (134) is removed and contacts (112, 114) are positioned onto the second hard- biasing material (110).
摘要翻译：公开了改进的磁阻读取传感器（100）和制造消除膜去除的磁阻读取传感器（100）的方法。通过将第一掩模（128）定位在由于后续层分裂成三个区域的间隙层（104）上而形成磁阻传感器（100）。第一掩模（128）位于间隙层（104）的中心区域上，并且第一硬偏压材料（106）沉积在间隙层（104）的外部区域上。去除第一掩模（128）并且将磁阻元件（116）沉积到第一硬偏压材料（106）的外部区域和间隙层（104）的中心区域上，由此形成有源区域（122），磁阻传感器（100）的第一无源区（124）和第二无源区（126）。在所有三个区域中，隔离层（118）沉积到磁阻元件（116）上，并且在所有三个区域中将软相邻层（120）沉积到间隔层（118）上。第二掩模（134）被定位在传感器的有源区域（122）上方，并且第二硬偏压材料（110）沉积在第一无源区域（124）中的软相邻层（120）上，并且第二被动区域（126）。移除第二掩模（134）并将触头（112,114）定位在第二硬质偏置材料（110）上。

9. 发明授权

US06122149A Magnetic microactuator and inductive sensor having shaped pole configuration 失效
标题翻译：具有成形极配置的磁微型致动器和电感式传感器
公开(公告)号：US06122149A
公开(公告)日：2000-09-19
申请号：US10100
申请日：1998-01-21
申请人： Lei Zhang , Patrick J. Ryan , Peter Crane
发明人： Lei Zhang , Patrick J. Ryan , Peter Crane
IPC分类号： G11B5/55 , G11B5/56 , G11B21/24
CPC分类号： G11B5/5552 , Y10T29/49012 , Y10T29/49025 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048
摘要： A microactuator for radially positioning a transducing head over a selected radial track of a rotatable disc in a disc drive system having a flexure to support a slider carrying the transducing head includes a stator operatively attached to the flexure. First and second pole pieces are substantially parallel to and spaced from each other, each having first and second ends. A via magnetically connects the first and second pole pieces. The first and second pole pieces are shaped so that a first gap between the first end of the first pole piece and the first end of the second pole piece is smaller than a second gap between the second end of the first pole piece and the second end of the second pole piece. A plurality of coils are wrapped around the stator. A rotor confronts the second end of the first pole piece and the second end of the second pole piece. The rotor is operatively attached to the slider and is movable with respect to the stator in response to an electrical current applied through the coils, so that movement of the rotor alters a radial position of the transducing head with respect to the flexure.
摘要翻译：用于在具有弯曲以支撑承载转换头的滑块的盘驱动系统中的可旋转盘的选定径向轨道上径向定位换能头的微致动器包括可操作地附接到挠曲件的定子。第一和第二极片基本上彼此平行并且彼此间隔开，每个具有第一和第二端。 A通孔磁连接第一和第二极片。第一和第二极片被成形为使得第一极靴的第一端和第二极靴的第一端之间的第一间隙小于第一极靴的第二端和第二极靴之间的第二间隙的第二极片。多个线圈缠绕在定子上。转子面对第一极靴的第二端和第二极靴的第二端。转子可操作地附接到滑块，并且响应于通过线圈施加的电流而相对于定子可移动，使得转子的运动相对于挠曲件改变换能头的径向位置。

10. 发明授权

US5776537A Method of characterizing exchange coupling for magnetoresistive sensor 失效
标题翻译：表征磁阻传感器交换耦合的方法
公开(公告)号：US5776537A
公开(公告)日：1998-07-07
申请号：US794421
申请日：1997-02-05
申请人： Patrick J. Ryan , Zhijun Yang , Greg S. Mowry
发明人： Patrick J. Ryan , Zhijun Yang , Greg S. Mowry
IPC分类号： G01R33/09 , H01F41/30 , B05D5/12
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/093 , H01F41/302
摘要： An MR sensor includes an MR layer and permanent magnets defining an active area on the MR layer. A bi-layer test structure is fabricated with a permanent magnet layer deposited on a substrate and an MR layer deposited on the permanent magnet layer. If desired, a SAL may be deposited prior to deposition of the permanent magnet layer. A DC magnetic field is applied to the bi-layer test structure, and the strength of the DC magnetic field is varied. During application of the DC magnetic field, the magnetic response of the bi-layer test structure is measured to determine a hysteresis loop of the bi-layer structure. The exchange coupling between the permanent magnet layer and the MR layer is characterized by a point of inflection identified on the measured hysteresis loop.
摘要翻译： MR传感器包括MR层和限定MR层上的有效区域的永磁体。制造双层测试结构，其中沉积在基底上的永磁体层和沉积在永磁体层上的MR层。如果需要，在沉积永磁体层之前可以沉积SAL。直流磁场被施加到双层测试结构，并且直流磁场的强度是变化的。在施加直流磁场期间，测量双层测试结构的磁响应以确定双层结构的磁滞回线。永磁体层和MR层之间的交换耦合的特征在于在测量的磁滞回线上识别的拐点。

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