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1. 发明申请

US20110122966A1 SYSTEM AND METHOD TO ACCESS AND ADDRESS HIGH-SPEED INTERFACE CONVERTER DEVICES 有权
标题翻译：用于访问和寻址高速接口转换器设备的系统和方法
公开(公告)号：US20110122966A1
公开(公告)日：2011-05-26
申请号：US12978968
申请日：2010-12-27
申请人： Patrick Chung-You Liu
发明人： Patrick Chung-You Liu
IPC分类号： H04L27/00
CPC分类号： H04L12/40006 , H04L41/0654 , H04L43/0817
摘要： High-speed transceiver devices, such as GBIC-type transceivers, are accessed and addressed. Identification information (including manufacturer name, model, compliance codes) is placed in data fields of the transceivers. An algorithm checks each port in each module of a host system to determine if a transceiver is present. If a particular transceiver is present, then algorithms store the port address of the transceiver in memory and enable the transceiver to be read from or written to. Reading from the transceiver includes reading the identification information, and writing to the transceiver includes writing the identification information. If a transceiver is initially determined not to be present or if the reading/writing/enabling processes fail, then a recovery process determines if the transceiver was present the last time it was checked. If it was present the last time, then the process continues to try to recover the transceiver data—otherwise, the port is marked as empty.
摘要翻译：高速收发器设备（如GBIC型收发器）被访问和寻址。识别信息（包括制造商名称，型号，合规性代码）放置在收发器的数据字段中。算法检查主机系统的每个模块中的每个端口以确定是否存在收发器。如果存在特定收发器，则算法将收发器的端口地址存储在存储器中，并使收发器能够被读取或写入。从收发器读取包括读取识别信息，并且向收发器的写入包括写入识别信息。如果最初确定收发器不存在，或者如果读/写/启用过程失败，则恢复过程确定上一次检查收发器是否存在。如果最后一次存在，则该过程将继续尝试恢复收发器数据，否则端口被标记为空。

2. 发明申请

US20120094502A1 METHODS FOR DEPOSITING BEVEL PROTECTIVE FILM 有权
标题翻译：沉积水保护膜的方法
公开(公告)号：US20120094502A1
公开(公告)日：2012-04-19
申请号：US12907149
申请日：2010-10-19
申请人： Neungho Shin , Patrick Chung , Yunsang Kim
发明人： Neungho Shin , Patrick Chung , Yunsang Kim
IPC分类号： H01L21/30
CPC分类号： H01L21/67069 , H01J37/32366 , H01J37/32376 , H01J37/32568 , H01L21/2007 , H01L21/30625 , H01L21/3083 , H01L21/67017
摘要： A method of film deposition using localized plasma to protect bevel edge of a wafer in a plasma chamber. The method includes adjusting an electrode gap between a movable electrode and a stationary electrode, the wafer being disposed on one of the movable electrode and the stationary electrode, to a gap distance configured to prevent plasma formation over a center portion of the wafer, the gap distance also dimensioned such that a plasma-sustainable condition around the bevel edge of the wafer is formed after the adjusting. The method also includes flowing deposition gas into the plasma chamber. The method includes maintaining, using a heater, a chuck temperature that is configured to facilitate film deposition on the bevel edge. The method further includes generating the localized plasma from the deposition gas for depositing a film on the bevel edge.
摘要翻译：使用局部等离子体的膜沉积方法来保护等离子体室中的晶片的斜边缘。该方法包括调整可动电极和固定电极之间的电极间隙，将晶片设置在可动电极和固定电极中的一个上，形成为防止等离子体在晶片的中心部分形成的间隙距离，间隙距离也被确定为使得在调整之后形成围绕晶片的斜边缘的等离子体可持续状态。该方法还包括将沉积气体流入等离子体室。该方法包括使用加热器维持配置成有助于膜倾斜边缘上的膜沉积的卡盘温度。该方法还包括从沉积气体产生局部等离子体，以便在斜面边缘上沉积膜。

3. 发明授权

US07872979B1 System and method to access and address high-speed interface converter devices 有权
标题翻译：访问和访问高速接口转换器设备的系统和方法
公开(公告)号：US07872979B1
公开(公告)日：2011-01-18
申请号：US11954174
申请日：2007-12-11
申请人： Patrick Chung-You Liu
发明人： Patrick Chung-You Liu
IPC分类号： H04L1/00
CPC分类号： H04L12/40006 , H04L41/0654 , H04L43/0817
摘要： High-speed transceiver devices, such as GBIC-type transceivers, are accessed and addressed. Identification information (including manufacturer name, model, compliance codes) is placed in data fields of the transceivers. An algorithm checks each port in each module of a host system to determine if a transceiver is present. If a particular transceiver is present, then algorithms store the port address of the transceiver in memory and enable the transceiver to be read from or written to. Reading from the transceiver includes reading the identification information, and writing to the transceiver includes writing the identification information. If a transceiver is initially determined not to be present or if the reading/writing/enabling processes fail, then a recovery process determines if the transceiver was present the last time it was checked. If it was present the last time, then the process continues to try to recover the transceiver data—otherwise, the port is marked as empty.
摘要翻译：高速收发器设备（如GBIC型收发器）被访问和寻址。识别信息（包括制造商名称，型号，合规性代码）放置在收发器的数据字段中。算法检查主机系统的每个模块中的每个端口以确定是否存在收发器。如果存在特定收发器，则算法将收发器的端口地址存储在存储器中，并使收发器能够被读取或写入。从收发器读取包括读取识别信息，并且向收发器的写入包括写入识别信息。如果最初确定收发器不存在，或者如果读/写/启用过程失败，则恢复过程确定上一次检查收发器是否存在。如果最后一次存在，则该过程将继续尝试恢复收发器数据，否则端口被标记为空。

4. 发明申请

US20050013913A1 Process and formulation for producing a multipurpose, multi-functional apple base 失效
标题翻译：生产多功能，多功能苹果基料的工艺和配方
公开(公告)号：US20050013913A1
公开(公告)日：2005-01-20
申请号：US10618669
申请日：2003-07-15
申请人： Perry Lidster , William Powrie , Patrick Chung
发明人： Perry Lidster , William Powrie , Patrick Chung
IPC分类号： A23L19/00 , A23C9/13 , A23L2/02 , A23L2/66 , A23L23/00 , A23P1/00
CPC分类号： A23C9/1307 , A23L2/02 , A23L2/66 , A23L19/09 , A23L23/00
摘要： This invention pertains to the process and formulation for the production of a multipurpose base consisting of mechanically-fractured apple cells and intact single apple cells and optionally gum stabilizers. The multipurpose base possesses desirable functional properties of smoothness, creaminess, viscosity enhancement, clingability and particulate carrier as well as nutraceutical and nutritional values. The multipurpose base is to be used as an ingredient for the preparation of smoothies, fruit salsa, fruit toppings, fruit desserts, soups and salad dressings. The sequencial process operations involve the mechanical impaction and screening of thermally-treated apple pieces to form a cellular aggregated mince, the comminution of the mince to produce a mash of intact single cells, homogenization of the mash to form a slurry consisting of released protoplasmic microparticles, size-specific cell-wall fragments and solubilized pectin, and finally the intermixing of the slurry dispersion and apple mash to create a multipurpose base with or without added gum stabilizers.
摘要翻译：本发明涉及用于生产由机械断裂的苹果细胞和完整的单一苹果细胞以及任选的牙龈稳定剂组成的多用途基质的方法和制剂。多功能底座具有平滑度，乳脂度，粘度增强，粘附性和颗粒载体以及营养和营养价值的理想功能特性。多用途基地用作制备冰沙，水果莎莎，水果浇头，水果甜点，汤和沙拉酱的成分。顺序过程操作涉及热处理的苹果片的机械冲击和筛选以形成细胞聚集的碎片，粉碎以产生完整单细胞的醪液，使糊状物均质化以形成由释放的原生质微粒组成的浆液，大小特异性细胞壁碎片和溶解的果胶，最后混合浆液分散体和苹果泥，以产生具有或不具有添加的胶稳定剂的多用途基质。

5. 发明授权

US08501283B2 Methods for depositing bevel protective film 有权
标题翻译：沉积斜角保护膜的方法
公开(公告)号：US08501283B2
公开(公告)日：2013-08-06
申请号：US12907149
申请日：2010-10-19
申请人： Neungho Shin , Patrick Chung , Yunsang Kim
发明人： Neungho Shin , Patrick Chung , Yunsang Kim
IPC分类号： H05H1/24
CPC分类号： H01L21/67069 , H01J37/32366 , H01J37/32376 , H01J37/32568 , H01L21/2007 , H01L21/30625 , H01L21/3083 , H01L21/67017
摘要： A method of film deposition using localized plasma to protect bevel edge of a wafer in a plasma chamber. The method includes adjusting an electrode gap between a movable electrode and a stationary electrode, the wafer being disposed on one of the movable electrode and the stationary electrode, to a gap distance configured to prevent plasma formation over a center portion of the wafer, the gap distance also dimensioned such that a plasma-sustainable condition around the bevel edge of the wafer is formed after the adjusting. The method also includes flowing deposition gas into the plasma chamber. The method includes maintaining, using a heater, a chuck temperature that is configured to facilitate film deposition on the bevel edge. The method further includes generating the localized plasma from the deposition gas for depositing a film on the bevel edge.
摘要翻译：使用局部等离子体的膜沉积方法来保护等离子体室中的晶片的斜边缘。该方法包括调整可动电极和固定电极之间的电极间隙，将晶片设置在可动电极和固定电极中的一个上，形成为防止等离子体在晶片的中心部分形成的间隙距离，间隙距离也被确定为使得在调整之后形成围绕晶片的斜边缘的等离子体可持续状态。该方法还包括将沉积气体流入等离子体室。该方法包括使用加热器维持配置成有助于膜倾斜边缘上的膜沉积的卡盘温度。该方法还包括从沉积气体产生局部等离子体，以便在斜面边缘上沉积膜。

6. 发明申请

US20100141466A1 System and method for automatic detection of fiber and copper in data switch systems 审中-公开
标题翻译：数据交换系统中自动检测光纤和铜缆的系统和方法
公开(公告)号：US20100141466A1
公开(公告)日：2010-06-10
申请号：US10116899
申请日：2002-04-05
申请人： Mary Thanhhuong Thi Nguyen , Patrick Chung-You Liu
发明人： Mary Thanhhuong Thi Nguyen , Patrick Chung-You Liu
IPC分类号： G08B21/00
CPC分类号： H04L49/40 , H04L49/30 , H04L49/351
摘要： A system and method automatically maintains data indicating a type of transmission medium connected at a port in a data switch device. The method comprises reading first transmission medium type data representing whether a first transmission medium type is connected to the port. A check is performed to determine whether a stored first transmission medium value is updated based at least in part on the first transmission medium type data, the first transmission medium value representing whether the first transmission medium type is actively connected. The method also involves reading second transmission medium type data representing whether a second transmission medium type is connected to the port. A check is performed to determine whether a stored second transmission medium value is updated based at least in part on the second transmission medium type data, the second transmission medium value representing whether the second transmission medium type is actively connected.
摘要翻译：系统和方法自动维护指示在数据交换设备中的端口处连接的传输介质的类型的数据。该方法包括读取表示第一传输介质类型是否连接到端口的第一传输介质类型数据。执行检查以至少部分地基于第一传输介质类型数据来确定所存储的第一传输介质值是否被更新，第一传输介质值表示第一传输介质类型是否被主动连接。该方法还涉及读取表示第二传输介质类型是否连接到端口的第二传输介质类型数据。执行检查以确定是否至少部分地基于第二传输介质类型数据更新存储的第二传输介质值，第二传输介质值表示第二传输介质类型是否被主动连接。

7. 发明授权

US08262920B2 Minimization of mask undercut on deep silicon etch 有权
标题翻译：在深硅蚀刻上最小化掩模底切
公开(公告)号：US08262920B2
公开(公告)日：2012-09-11
申请号：US11820334
申请日：2007-06-18
申请人： Tamarak Pandhumsoporn , Patrick Chung , Jackie Seto , S. M. Reza Sadjadi
发明人： Tamarak Pandhumsoporn , Patrick Chung , Jackie Seto , S. M. Reza Sadjadi
IPC分类号： C03C15/00
CPC分类号： H01L21/3086 , H01L21/31138
摘要： A method for forming features in a silicon layer is provided. A mask is formed with a plurality of mask openings over the silicon layer. A polymer layer is deposited over the mask by flowing a hydrogen free deposition gas comprising C4F8, forming a plasma from the deposition gas, depositing a polymer from the plasma for at least 20 seconds, and stopping the depositing the polymer after the at least 20 seconds. The deposited polymer layer is opened by flowing an opening gas, forming a plasma from the opening gas which selectively removes the deposited polymer on bottoms of the plurality of mask openings with respect to deposited polymer on sides of the plurality of mask openings, and stopping the opening when at least some of the plurality of mask features are opened. The silicon layer is etched through the mask and deposited polymer layer.
摘要翻译：提供了一种在硅层中形成特征的方法。在硅层上形成有多个掩模开口的掩模。通过使包含C4F8的无氢沉积气体从沉积气体形成等离子体，从等离子体沉积聚合物至少20秒，并在至少20秒后停止沉积聚合物，沉积聚合物层。沉积的聚合物层通过流动开口气体而打开，从开口气体形成等离子体，其在多个掩模开口的侧面上相对于沉积的聚合物选择性地去除多个掩模开口的底部上沉积的聚合物，并且停止当多个掩模特征中的至少一些被打开时打开。通过掩模蚀刻硅层并沉积聚合物层。

8. 发明授权

US07317689B1 System and method to access and address high-speed interface converter devices 失效
标题翻译：访问和访问高速接口转换器设备的系统和方法
公开(公告)号：US07317689B1
公开(公告)日：2008-01-08
申请号：US10364623
申请日：2003-02-10
申请人： Patrick Chung-You Liu
发明人： Patrick Chung-You Liu
IPC分类号： H04L1/00
CPC分类号： H04L12/40006 , H04L41/0654 , H04L43/0817
摘要： High-speed transceiver devices, such as GBIC-type transceivers, are accessed and addressed. Identification information (including manufacturer name, model, compliance codes) is placed in data fields of the transceivers. An algorithm checks each port in each module of a host system to determine if a transceiver is present. If a particular transceiver is present, then algorithms store the port address of the transceiver in memory and enable the transceiver to be read from or written to. Reading from the transceiver includes reading the identification information, and writing to the transceiver includes writing the identification information. If a transceiver is initially determined not to be present or if the reading/writing/enabling processes fail, then a recovery process determines if the transceiver was present the last time it was checked. If it was present the last time, then the process continues to try to recover the transceiver data—otherwise, the port is marked as empty.
摘要翻译：高速收发器设备（如GBIC型收发器）被访问和寻址。识别信息（包括制造商名称，型号，合规性代码）放置在收发器的数据字段中。算法检查主机系统的每个模块中的每个端口以确定是否存在收发器。如果存在特定收发器，则算法将收发器的端口地址存储在存储器中，并使收发器能够被读取或写入。从收发器读取包括读取识别信息，并且向收发器的写入包括写入识别信息。如果最初确定收发器不存在，或者如果读/写/启用过程失败，则恢复过程确定上一次检查收发器是否存在。如果最后一次存在，则该过程将继续尝试恢复收发器数据，否则端口被标记为空。

9. 发明申请

US20130312913A1 ARRANGEMENT FOR DEPOSITING BEVEL PROTECTIVE FILM 审中-公开
标题翻译：沉积保护膜的安排
公开(公告)号：US20130312913A1
公开(公告)日：2013-11-28
申请号：US13959595
申请日：2013-08-05
申请人： Neungho Shin , Patrick Chung , Yunsang Kim
发明人： Neungho Shin , Patrick Chung , Yunsang Kim
IPC分类号： H01L21/67
CPC分类号： H01L21/67069 , H01J37/32366 , H01J37/32376 , H01J37/32568 , H01L21/2007 , H01L21/30625 , H01L21/3083 , H01L21/67017
摘要： An arrangement for depositing a film at a bevel edge of a substrate in a plasma chamber. The arrangement includes a gas delivery system for supplying gas into the chamber. The arrangement also includes a pair of electrodes including a movable electrode and a stationary electrode, wherein the substrate is disposed on one of the pair of electrodes. The arrangement further includes a gap controller module configured for adjusting an electrode gap between the pair of electrodes to a gap distance configured to prevent plasma formation over a center portion of the substrate. The gap distance is also dimensioned such that a plasma-sustainable condition around the bevel edge of the substrate is formed. The arrangement moreover includes a heater disposed below the substrate and powered by an RE source, wherein the heater is maintained at a chuck temperature conducive for facilitating film deposition on the bevel edge of the substrate.
摘要翻译：一种用于在等离子体室中的衬底的斜边缘处沉积膜的布置。该装置包括用于将气体供应到室中的气体输送系统。该布置还包括一对电极，其包括可动电极和固定电极，其中，所述基板设置在所述一对电极中的一个上。该装置还包括间隙控制器模块，其配置用于将一对电极之间的电极间隙调整到间隔距离，间隙距离被配置为防止等离子体在衬底的中心部分上形成。间隙距离的尺寸也被设计成使得形成在基板的斜边缘周围的等离子体可持续状态。该装置还包括设置在基板下方并由RE源供电的加热器，其中加热器保持在有利于在衬底的斜边缘上的膜沉积的卡盘温度。

10. 发明申请

US20120298301A1 MINIMIZATION OF MASK UNDERCUT ON DEEP ETCH 审中-公开
标题翻译：深层蚀刻掩蔽最小化
公开(公告)号：US20120298301A1
公开(公告)日：2012-11-29
申请号：US13572061
申请日：2012-08-10
申请人： Tamarak Pandhumsoporn , Patrick Chung , Jackie Seto , S. M. Reza Sadjadi
发明人： Tamarak Pandhumsoporn , Patrick Chung , Jackie Seto , S. M. Reza Sadjadi
IPC分类号： C23F1/08
CPC分类号： H01L21/3086 , H01L21/31138
摘要： A method for forming features in a silicon layer is provided. A mask is formed with a plurality of mask openings over the silicon layer. A polymer layer is deposited over the mask by flowing a hydrogen free deposition gas comprising C4F8, forming a plasma from the deposition gas, depositing a polymer from the plasma for at least 20 seconds, and stopping the depositing the polymer after the at least 20 seconds. The deposited polymer layer is opened by flowing an opening gas, forming a plasma from the opening gas which selectively removes the deposited polymer on bottoms of the plurality of mask openings with respect to deposited polymer on sides of the plurality of mask openings, and stopping the opening when at least some of the plurality of mask features are opened. The silicon layer is etched through the mask and deposited polymer layer.
摘要翻译：提供了一种在硅层中形成特征的方法。在硅层上形成有多个掩模开口的掩模。通过使包含C4F8的无氢沉积气体从沉积气体形成等离子体，从等离子体沉积聚合物至少20秒，并在至少20秒后停止沉积聚合物，沉积聚合物层。沉积的聚合物层通过流动开口气体而打开，从开口气体形成等离子体，其在多个掩模开口的侧面上相对于沉积的聚合物选择性地去除多个掩模开口的底部上沉积的聚合物，并且停止当多个掩模特征中的至少一些被打开时打开。通过掩模蚀刻硅层并沉积聚合物层。

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