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1. 发明申请

US20060054495A1 Substrate processing system 审中-公开
标题翻译：基板加工系统
公开(公告)号：US20060054495A1
公开(公告)日：2006-03-16
申请号：US11222270
申请日：2005-09-08
申请人： Hartmut Rohrmann , Oliver Rattunde
发明人： Hartmut Rohrmann , Oliver Rattunde
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： H01L21/67173 , G11B5/8404 , H01L21/67709 , H01L21/67712 , H01L21/6776
摘要： In a substrate processing system for the treatment of substrates in vacuum two linear assemblies of process modules are stacked one above the other and connected by at least one lift module allowing for the transport from the first set to the second set. Along the traveling path through the first and second set of process modules there is arranged a linear synchronous motor. A substrate carrier with rails interacting with rollers mounted in the processing system is being held by the attractive forces of said linear synchronous motor in vertical position.
摘要翻译：在用于处理真空中的基板的基板处理系统中，处理模块的两个线性组件彼此层叠堆叠并由至少一个提升模块连接，允许从第一组传送到第二组。沿着通过第一和第二组过程模块的行进路径布置有线性同步电动机。具有与安装在处理系统中的辊相互作用的导轨的衬底载体正被所述线性同步电动机的吸引力保持在垂直位置。

2. 发明授权

US08263489B2 Process for the deposition of an anti-reflection film on a substrate 有权
标题翻译：用于在基板上沉积抗反射膜的工艺
公开(公告)号：US08263489B2
公开(公告)日：2012-09-11
申请号：US13011109
申请日：2011-01-21
申请人： Oliver Rattunde , Stephan Voser
发明人： Oliver Rattunde , Stephan Voser
IPC分类号： H01L21/4763 , H01L31/0232
CPC分类号： C23C14/0652 , C23C14/0042 , C23C14/0094 , C23C14/3492 , H01L31/02168 , H01L31/028 , H01L31/03682 , H01L31/03762 , H01L31/1868 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method for the deposition of an anti-reflection film on a substrate is disclosed. A substrate including a plurality of solar cell structures is provided and placed in a vacuum chamber with a target including silicon. A flow of a nitrogen-containing reactive gas into the vacuum chamber is set to a first value while a voltage between the target and ground is switched off and then increased to a second value. A voltage is applied between the target and ground, whereby a film of silicon and nitrogen is deposited on the substrate in a flow of the nitrogen-containing reactive gas which is higher than the first value.
摘要翻译：公开了一种在衬底上沉积抗反射膜的方法。提供包括多个太阳能电池结构的基板并且放置在具有包括硅的靶的真空室中。将含氮反应性气体流入真空室的流量设定为第一值，同时关闭目标和地面之间的电压，然后增加到第二值。在靶和地之间施加电压，由此在高于第一值的含氮反应气体的流动下，在衬底上沉积硅和氮的膜。

3. 发明申请

US20120009730A1 METHOD OF INLINE MANUFACTURING A SOLAR CELL PANEL 有权
标题翻译：线性制造太阳能电池板的方法
公开(公告)号：US20120009730A1
公开(公告)日：2012-01-12
申请号：US13256979
申请日：2010-03-15
申请人： Stephan Voser , Oliver Rattunde , Martin Dubs , Gerald Feistritzer , Volker Wuestenhagen , Gerhard Dovids
发明人： Stephan Voser , Oliver Rattunde , Martin Dubs , Gerald Feistritzer , Volker Wuestenhagen , Gerhard Dovids
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L21/67173 , H01L21/67196 , H01L21/67201 , H01L21/67207
摘要： Throughput of manufacturing thin-film solar panels by inline technique is made substantially independent from the time extent of different surface treatment steps by accordingly subdividing treatment steps in sub-steps performed in inline subsequent treatment stations. Treatment duration in each of the subsequent treatment stations is equal (τ).
摘要翻译：通过在线技术制造薄膜太阳能电池板的生产能力通过相应地在后续处理站中执行的子步骤中分开处理步骤而与不同的表面处理步骤的时间范围基本上独立。每个后续治疗站的治疗持续时间相等（τ）。

4. 发明授权

US09214589B2 Method of inline manufacturing a solar cell panel 有权
标题翻译：在线制造太阳能电池板的方法
公开(公告)号：US09214589B2
公开(公告)日：2015-12-15
申请号：US13256979
申请日：2010-03-15
申请人： Stephan Voser , Oliver Rattunde , Martin Dubs , Gerald Feistritzer , Volker Wuestenhagen , Gerhard Dovids
发明人： Stephan Voser , Oliver Rattunde , Martin Dubs , Gerald Feistritzer , Volker Wuestenhagen , Gerhard Dovids
IPC分类号： H01L31/18 , H01L21/67
CPC分类号： H01L31/18 , H01L21/67173 , H01L21/67196 , H01L21/67201 , H01L21/67207
摘要： Throughput of manufacturing thin-film solar panels by inline technique is made substantially independent from the time extent of different surface treatment steps by accordingly subdividing treatment steps in sub-steps performed in inline subsequent treatment stations. Treatment duration in each of the subsequent treatment stations is equal(τ).
摘要翻译：通过在线技术制造薄膜太阳能电池板的生产能力通过相应地在后续处理站中执行的子步骤中分开处理步骤而与不同表面处理步骤的时间范围基本上独立。每个后续治疗站的治疗持续时间相等（τ）。

5. 发明申请

US20070144899A1 Target arrangement for mounting / dismounting and method of manufacturing 有权
标题翻译：安装/拆卸的目标布置及制造方法
公开(公告)号：US20070144899A1
公开(公告)日：2007-06-28
申请号：US11639034
申请日：2006-12-14
申请人： Marcel Neusch , Peter Schlegel , Hartmut Rohrmann , Oliver Rattunde
发明人： Marcel Neusch , Peter Schlegel , Hartmut Rohrmann , Oliver Rattunde
IPC分类号： C23C14/00
CPC分类号： C23C14/3407 , H01J37/34 , H01J37/3423 , H01J37/3435
摘要： So as to provide a target arrangement with improved mounting and dismounting ability, the target arrangement comprises a plate along a plane (E) which has a border (7) defined by a first wedge surface (5u) angled to the addressed general plane (E) and a second wedge surface (5l) which is substantially planar as well and angled with respect to the generic plane (E). The two wedge surfaces mutually convert in a direction along the addressed plane (E) and from a more central area of the plate outwardly.
摘要翻译：为了提供具有改进的安装和拆卸能力的目标装置，目标装置包括沿着具有由第一楔形表面（5 u）定义的边界（7）的平面（E）的板，与所寻址的总平面（E）成角度，并且第二楔形表面（5L1）也是基本上平面的并且相对于通用平面（E）成一定角度。两个楔形表面在沿着寻址的平面（E）的方向上并且从板的更中心的区域向外相互转换。

6. 发明授权

US08540850B2 Target arrangement for mounting / dismounting and method of manufacturing 有权
标题翻译：安装/拆卸的目标布置及制造方法
公开(公告)号：US08540850B2
公开(公告)日：2013-09-24
申请号：US11639034
申请日：2006-12-14
申请人： Marcel Neusch , Peter Schlegel , Hartmut Rohrmann , Oliver Rattunde
发明人： Marcel Neusch , Peter Schlegel , Hartmut Rohrmann , Oliver Rattunde
IPC分类号： C23C14/00
CPC分类号： C23C14/3407 , H01J37/34 , H01J37/3423 , H01J37/3435
摘要： So as to provide a target arrangement with improved mounting and dismounting ability, the target arrangement comprises a plate along a plane (E) which has a border (7) defined by a first wedge surface (5u) angled to the addressed general plane (E) and a second wedge surface (5l) which is substantially planar as well and angled with respect to the generic plane (E). The two wedge surfaces mutually convert in a direction along the addressed plane (E) and from a more central area of the plate outwardly.
摘要翻译：为了提供具有改进的安装和拆卸能力的目标装置，目标装置包括沿着平面（E）的板，其具有由与所寻址的总平面成角度的第一楔形表面（5u）限定的边界（7））和第二楔形表面（51），其基本上是平面的，并且相对于通用平面（E）成角度。两个楔形表面在沿着寻址的平面（E）的方向上并且从板的更中心的区域向外相互转换。

7. 发明申请

US20110177649A1 PROCESS FOR THE DEPOSITION OF AN ANTI-REFLECTION FILM ON A SUBSTRATE 有权
标题翻译：在基板上沉积抗反射膜的方法
公开(公告)号：US20110177649A1
公开(公告)日：2011-07-21
申请号：US13011109
申请日：2011-01-21
申请人： Oliver Rattunde , Stephan Voser
发明人： Oliver Rattunde , Stephan Voser
IPC分类号： H01L31/0216
CPC分类号： C23C14/0652 , C23C14/0042 , C23C14/0094 , C23C14/3492 , H01L31/02168 , H01L31/028 , H01L31/03682 , H01L31/03762 , H01L31/1868 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method for the deposition of an anti-reflection film on a substrate is disclosed. A substrate including a plurality of solar cell structures is provided and placed in a vacuum chamber with a target including silicon. A flow of a nitrogen-containing reactive gas into the vacuum chamber is set to a first value while a voltage between the target and ground is switched off and then increased to a second value. A voltage is applied between the target and ground, whereby a film of silicon and nitrogen is deposited on the substrate in a flow of the nitrogen-containing reactive gas which is higher than the first value.
摘要翻译：公开了一种在衬底上沉积抗反射膜的方法。提供包括多个太阳能电池结构的基板并且放置在具有包括硅的靶的真空室中。将含氮反应性气体流入真空室的流量设定为第一值，同时关闭目标和地面之间的电压，然后增加到第二值。在靶和地之间施加电压，由此在高于第一值的含氮反应气体的流动下，在衬底上沉积硅和氮的膜。

8. 发明申请

US20080163817A1 APPARATUS FOR GAS HANDLING IN VACUUM PROCESSES 审中-公开
标题翻译：在真空过程中进行气体处理的装置
公开(公告)号：US20080163817A1
公开(公告)日：2008-07-10
申请号：US11968717
申请日：2008-01-03
申请人： Oliver Rattunde
发明人： Oliver Rattunde
IPC分类号： C23C16/00
CPC分类号： C23C14/564
摘要： In an apparatus for controlling a gas-rise pattern in a vacuum treatment process a gas inlet (1) is operatively connected with a mass-flow-controller MFC (2); said MFC (2) being again operatively connected via a first valve (5) with a vacuum chamber (3) and in parallel via second valve (6) with a vent-line (4). Said connection with the vent-line (4) further comprises means for varying the pump cross section of said vent-line (4). In another embodiment the apparatus for controlling a gas-rise pattern in a vacuum treatment process comprises a gas inlet (13) operatively connected with a vacuum chamber (3) via a valve (11), wherein the connection between gas inlet (13) and valve (11) further comprises a diaphragm (12).
摘要翻译：在用于在真空处理过程中控制气体升高模式的装置中，气体入口（1）与质量流量控制器MFC（2）可操作地连接; 所述MFC（2）通过第一阀（5）再次通过真空室（3）可操作地连接并且通过第二阀（6）与排气管线（4）平行地连接。与排气管（4）的所述连接还包括用于改变所述排气管（4）的泵横截面的装置。在另一个实施例中，用于在真空处理过程中控制气体升高图案的装置包括经由阀（11）与真空室（3）可操作地连接的气体入口（13），其中气体入口（13）和阀（11）还包括隔膜（12）。

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