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    • 1. 发明授权
    • Thin-film lid MEMS devices and methods
    • 薄膜盖MEMS器件及方法
    • US08148790B2
    • 2012-04-03
    • US12499703
    • 2009-07-08
    • Arthur S. Morris, IIILi SunNorlito Baytan
    • Arthur S. Morris, IIILi SunNorlito Baytan
    • H01L29/84H01L21/00
    • B81C1/00333B81C2203/0145
    • Thin film encapsulation devices and methods for MEMS devices and packaging are provided. For a MEMS device encapsulated by a sacrificial layer, a lid layer can be deposited over the MEMS device without touching the MEMS device. The lid layer can be patterned and etched with a distribution of release etch holes, which provide access to the sacrificial layer encapsulating the MEMS device. The sacrificial material can be removed through the release etch holes, and the release etch holes can be filled with a seal layer. The seal layer can be removed from the substrate except where it seals the etch holes, leaving a series of plugs that can prevent other materials from entering the MEMS device cavity. In addition, a seal metal layer can be deposited and patterned so that it covers and encloses the plugged etch holes, and a barrier layer can cover the entire encapsulation structure.
    • 提供了用于MEMS器件和封装的薄膜封装装置和方法。 对于由牺牲层封装的MEMS器件,盖层可以沉积在MEMS器件上而不接触MEMS器件。 可以利用释放蚀刻孔的分布对盖层进行图案化和蚀刻,释放蚀刻孔提供对封装MEMS器件的牺牲层的访问。 可以通过释放蚀刻孔去除牺牲材料,并且可以用密封层填充释放蚀刻孔。 密封层可以从衬底除去,除非它密封蚀刻孔,留下一系列可防止其他材料进入MEMS器件腔的插头。 此外,密封金属层可以沉积和图案化,使得其覆盖并封闭堵塞的蚀刻孔,并且阻挡层可以覆盖整个封装结构。