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1. 发明申请

US20050012968A1 Pixel with variable resolution during exposure 审中-公开
标题翻译：曝光期间可变分辨率的像素
公开(公告)号：US20050012968A1
公开(公告)日：2005-01-20
申请号：US10619240
申请日：2003-07-14
申请人： Nathaniel McCaffrey
发明人： Nathaniel McCaffrey
IPC分类号： H01L27/148 , G06F15/00 , H04N1/04 , H04N5/235 , H04N5/30 , H04N5/335
CPC分类号： H04N5/341
摘要： A variable resolution imager and method of forming output signals from a variable resolution imager are described. An imager having a number of pixels is provided. The variable resolution imager is accomplished by binning selected groups of pixels in various sections of the imager together, thereby forming regions of variable resolution. The larger the number of pixels binned together the lower the resolution of that section of the imager. The binning is controlled by programming signals to the imager so that the resolution can be changed within a frame or between frames. The resolution can be controlled by a computer processor or by an operator. Feedback of the output of the imager can be used to determine the resolution of various sections of the imager.
摘要翻译：描述了可变分辨率成像器和从可变分辨率成像器形成输出信号的方法。提供了具有多个像素的成像器。可变分辨率成像器通过将成像器的各个部分中的所选像素组合并在一起来实现，从而形成可变分辨率的区域。合并在一起的像素数越多，该部分的分辨率越低。分箱由编程信号控制到成像器，使得分辨率可以在帧内或帧之间改变。该分辨率可由计算机处理器或操作者控制。成像器输出的反馈可用于确定成像器各部分的分辨率。

2. 发明授权

US08553975B2 Method and apparatus for wide-band imaging based on narrow-band image data 有权
标题翻译：基于窄带图像数据的宽带成像方法和装置
公开(公告)号：US08553975B2
公开(公告)日：2013-10-08
申请号：US12873643
申请日：2010-09-01
申请人： Zhihua He , Nathaniel McCaffrey , Jason Sproul
发明人： Zhihua He , Nathaniel McCaffrey , Jason Sproul
IPC分类号： G06K9/60
CPC分类号： H04N9/045 , A61B1/042 , G01J3/28 , G01J3/2823 , G01J3/30 , G01J2003/2826 , H04N5/30 , H04N2209/045
摘要： In one embodiment, an imaging method may include receiving an intensity value of a first spectral channel associated with a pixel location. The intensity value of the first spectral channel may be based on electromagnetic radiation reflected from an object after being emitted from a narrow-band electromagnetic radiation source. The method may further include defining an intensity value of a second spectral channel based on the intensity value of the first spectral channel. The second spectral channel may be associated with a spectral region of electromagnetic radiation different from a spectral region of electromagnetic radiation associated with the first spectral channel. The method may also include associating the intensity value of the second spectral channel with the pixel location.
摘要翻译：在一个实施例中，成像方法可以包括接收与像素位置相关联的第一光谱通道的强度值。第一光谱通道的强度值可以基于从窄带电磁辐射源发射之后从物体反射的电磁辐射。该方法还可以包括基于第一频谱信道的强度值来定义第二频谱信道的强度值。第二光谱通道可以与不同于与第一光谱通道相关联的电磁辐射的光谱区域的电磁辐射的光谱区域相关联。该方法还可以包括将第二频谱信道的强度值与像素位置相关联。

3. 发明申请

US20060278905A1 CMOS pixel with dual gate PMOS 有权
标题翻译：具有双栅极PMOS的CMOS像素
公开(公告)号：US20060278905A1
公开(公告)日：2006-12-14
申请号：US11508354
申请日：2006-08-23
申请人： Taner Dosluoglu , Nathaniel McCaffrey
发明人： Taner Dosluoglu , Nathaniel McCaffrey
IPC分类号： H01L31/113
CPC分类号： H01L27/14609 , H01L27/14632 , H01L27/14643 , H01L31/112
摘要： A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P+ type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N− well will not affect the collection of the photo-generated charge as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the N− well potential so that they remain reverse biased with respect to the N− well. One of the P+ regions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated charge. The N− well forms a second gate for the dual gate PMOS transistor since the potential of the N− well 12 affects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible. The circuit can be expanded to form two PMOS transistors sharing a common drain in the N− well.
摘要翻译：具有双栅极PMOS的像素电路通过在N阱中形成两个P + +区形成。 N＆lt;＆gt;井是在P + +型衬底中。两个P + SUP区域形成PMOS晶体管的源极和漏极。形成在N阱内的PMOS晶体管不会影响光电荷的收集，只要PMOS晶体管的源极和漏极电位被设置在比N - 阱电位，使得它们相对于N 阱保持反向偏置。用于形成源极和漏极区域的一个P + SUP区域可用于在读取该像素以准备下一个累积光电荷循环之后复位像素。由于NΩ阱12的电位影响PMOS晶体管的沟道的导电性，因此N阱构成了双栅极PMOS晶体管的第二栅极。添加两个NMOS晶体管使读出信号能够存储在NMOS晶体管之一的栅极处，从而使快照成像器成为可能。该电路可以扩展以形成在N阱中共享一个共同漏极的两个PMOS晶体管。

4. 发明授权

US09017937B1 Nanopore sequencing using ratiometric impedance 有权
标题翻译：使用比例阻抗进行纳孔测序
公开(公告)号：US09017937B1
公开(公告)日：2015-04-28
申请号：US13083320
申请日：2011-04-08
申请人： Stephen Turner , Nathaniel McCaffrey , Jeffrey Wegener , Adrian Fehr
发明人： Stephen Turner , Nathaniel McCaffrey , Jeffrey Wegener , Adrian Fehr
IPC分类号： G01N33/487 , C12Q1/68
CPC分类号： G01N33/48721 , C12Q1/6869 , C12Q2563/116 , C12Q2565/631 , C12Q2537/165
摘要： The invention relates to devices and methods for nanopore sequencing. The invention includes arrays of nanopores having incorporated electronic circuits, for example, in CMOS. The invention includes devices having sample and reference pores connecting sample, measurement and reference chambers, wherein potential measurements in each chamber is used to provide an accurate determination of current through a sample nanopore, improving nanopore sequencing.
摘要翻译：本发明涉及纳米孔测序的装置和方法。本发明包括纳入电子电路的纳米孔阵列，例如在CMOS中。本发明包括具有连接样品，测量和参考室的样品和参考孔的装置，其中每个室中的电位测量用于提供通过样品纳米孔的电流的精确测定，改进纳米孔测序。

5. 发明申请

US20050156214A1 CMOS pixel with dual gate PMOS 有权
公开(公告)号：US20050156214A1
公开(公告)日：2005-07-21
申请号：US11068365
申请日：2005-02-28
申请人： Taner Dosluoglu , Nathaniel McCaffrey
发明人： Taner Dosluoglu , Nathaniel McCaffrey
IPC分类号： H01L21/8238 , H01L27/092 , H01L27/146 , H01L29/10 , H01L29/76 , H01L31/036 , H01L31/10 , H01L31/112 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14632 , H01L27/14643 , H01L31/112
摘要： A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N− well will not affect the collection of the photo-generated charge as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the N− well potential so that they remain reverse biased with respect to the N− well. One of the P+ regions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated charge. The N− well forms a second gate for the dual gate PMOS transistor since the potential of the N− well 12 affects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible. The circuit can be expanded to form two PMOS transistors sharing a common drain in the N− well.

6. 发明申请

US20050156212A1 CMOS pixel with dual gate PMOS 有权
标题翻译：具有双栅极PMOS的CMOS像素
公开(公告)号：US20050156212A1
公开(公告)日：2005-07-21
申请号：US11068283
申请日：2005-02-28
申请人： Taner Dosluoglu , Nathaniel McCaffrey
发明人： Taner Dosluoglu , Nathaniel McCaffrey
IPC分类号： H01L21/8238 , H01L27/092 , H01L27/146 , H01L29/10 , H01L29/76 , H01L31/036 , H01L31/10 , H01L31/112 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14632 , H01L27/14643 , H01L31/112
摘要： A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS transistors formed within the N− well will not affect the collection of the photo-generated charge as long as the source and drain potentials of the PMOS transistors are set at a lower potential than the N− well potential so that they remain reverse biased with respect to the N− well. One of the P+ regions used to form the source and drain regions can be used to reset the pixel after it has been read in preparation for the next cycle of accumulating photo-generated charge. The N− well forms a second gate for the dual gate PMOS transistor since the potential of the N− well 12 affects the conductivity of the channel of the PMOS transistor. The addition of two NMOS transistors enables the readout signal to be stored at the gate of one of the NMOS transistors thereby making a snapshot imager possible. The circuit can be expanded to form two PMOS transistors sharing a common drain in the N− well.
摘要翻译：具有双栅极PMOS的像素电路通过在N阱中形成两个P + +区形成。 N＆lt;＆gt; - 孔是在P + - SUP型衬底中。两个P + SUP区域形成PMOS晶体管的源极和漏极。形成在N阱内的PMOS晶体管不会影响光电荷的收集，只要PMOS晶体管的源极和漏极电位被设置在比N - 阱电位，使得它们相对于N 阱保持反向偏置。用于形成源极和漏极区域的一个P + SUP区域可用于在读取该像素以准备下一个累积光电荷循环之后复位像素。由于NΩ阱12的电位影响PMOS晶体管的沟道的导电性，因此N阱构成了双栅极PMOS晶体管的第二栅极。添加两个NMOS晶体管使读出信号能够存储在NMOS晶体管之一的栅极处，从而使快照成像器成为可能。该电路可以扩展以形成在N阱中共享一个共同漏极的两个PMOS晶体管。

7. 发明申请

US20110069315A1 METHOD AND APPARATUS FOR WIDE-BAND IMAGING BASED ON NARROW-BAND IMAGE DATA 有权
标题翻译：基于窄带图像数据的宽带成像的方法和装置
公开(公告)号：US20110069315A1
公开(公告)日：2011-03-24
申请号：US12873643
申请日：2010-09-01
申请人： Zhihua HE , Nathaniel McCaffrey , Jason Sproul
发明人： Zhihua HE , Nathaniel McCaffrey , Jason Sproul
IPC分类号： G01J3/46
CPC分类号： H04N9/045 , A61B1/042 , G01J3/28 , G01J3/2823 , G01J3/30 , G01J2003/2826 , H04N5/30 , H04N2209/045
摘要： In one embodiment, an imaging method may include receiving an intensity value of a first spectral channel associated with a pixel location. The intensity value of the first spectral channel may be based on electromagnetic radiation reflected from an object after being emitted from a narrow-band electromagnetic radiation source. The method may further include defining an intensity value of a second spectral channel based on the intensity value of the first spectral channel. The second spectral channel may be associated with a spectral region of electromagnetic radiation different from a spectral region of electromagnetic radiation associated with the first spectral channel. The method may also include associating the intensity value of the second spectral channel with the pixel location.
摘要翻译：在一个实施例中，成像方法可以包括接收与像素位置相关联的第一光谱通道的强度值。第一光谱通道的强度值可以基于从窄带电磁辐射源发射之后从物体反射的电磁辐射。该方法还可以包括基于第一频谱信道的强度值来定义第二频谱信道的强度值。第二光谱通道可以与不同于与第一光谱通道相关联的电磁辐射的光谱区域的电磁辐射的光谱区域相关联。该方法还可以包括将第二频谱信道的强度值与像素位置相关联。

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