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    • 4. 发明申请
    • Doped alloys for electrical interconnects, methods of production and uses thereof
    • 用于电互连的掺杂合金,生产方法及其用途
    • US20060113683A1
    • 2006-06-01
    • US11147958
    • 2005-06-08
    • Nancy DeanJames FlintJohn LalenaMartin Weiser
    • Nancy DeanJames FlintJohn LalenaMartin Weiser
    • H01L23/48C22C13/00C22C5/08
    • C22C11/06C22C11/00C22C12/00C22C13/00C22C19/03H01L24/29H01L2924/01013H01L2924/01015H01L2924/01029H01L2924/01047H01L2924/01049H01L2924/01322H01L2924/014H01L2924/1301H01L2924/1305H01L2924/14H01L2924/00
    • Lead free solder compositions are described herein that include at least one solder material; at least one dopant material, wherein the dopant is present in the material in an amount of less than about 1000 ppm, and wherein the solder composition is substantially lead free. Several doped solder compositions described herein comprise at least one solder material, at least one phosphorus-based dopant and at least one copper-based dopant. Methods of forming doped solder materials include: a) providing at least one solder material; b) providing at least one phosphorus-based dopant; c) providing at least one copper-based dopant, and d) blending the at least one solder material, the at least one phosphorus-based dopant and the at least one copper-based dopant to form a doped solder material. Layered materials are also described herein that comprise: a) a surface or substrate; b) an electrical interconnect; c) a solder composition comprising at least one solder material; at least one dopant material, wherein the dopant is present in the material in an amount of less than about 1000 ppm, and wherein the solder composition is substantially lead free. Layered materials are also described herein that comprise: a) a surface or substrate; b) an electrical interconnect; c) a solder composition comprising at least one phosphorus-based dopant and at least one copper-based dopant, such as those described herein, and d) a semiconductor die or package. Electronic and semiconductor components that comprise solder compositions and/or layered materials described herein are also contemplated.
    • 本文描述了无铅焊料组合物,其包括至少一种焊料材料; 至少一种掺杂剂材料,其中所述掺杂剂以小于约1000ppm的量存在于所述材料中,并且其中所述焊料组合物基本上无铅。 本文所述的多种掺杂焊料组合物包括至少一种焊料材料,至少一种磷基掺杂剂和至少一种铜基掺杂剂。 形成掺杂焊料的方法包括:a)提供至少一种焊料; b)提供至少一种磷基掺杂剂; c)提供至少一种铜基掺杂剂,以及d)将所述至少一种焊料材料,所述至少一种磷基掺杂剂和所述至少一种铜基掺杂剂共混以形成掺杂的焊料材料。 本文还描述了分层材料,其包括:a)表面或基底; b)电互连; c)包含至少一种焊料材料的焊料组合物; 至少一种掺杂剂材料,其中所述掺杂剂以小于约1000ppm的量存在于所述材料中,并且其中所述焊料组合物基本上无铅。 本文还描述了分层材料,其包括:a)表面或基底; b)电互连; c)包含至少一种磷基掺杂剂和至少一种铜基掺杂剂的焊料组合物,例如本文所述的那些,以及d)半导体管芯或封装。 包括本文所述的焊料组合物和/或层状材料的电子和半导体组件也被考虑。
    • 7. 发明申请
    • Thermally conductive materials, solder preform constructions, assemblies and semiconductor packages
    • 导热材料,焊料预制件结构,组件和半导体封装
    • US20070013054A1
    • 2007-01-18
    • US11180459
    • 2005-07-12
    • Brian RuchertMartin WeiserMark FeryNancy DeanJohn Lalena
    • Brian RuchertMartin WeiserMark FeryNancy DeanJohn Lalena
    • H01L23/34
    • H01L23/3675H01L23/3736H01L2224/1134H01L2224/13144H01L2224/16H01L2224/73253H01L2924/01019H01L2924/01057H01L2924/01078H01L2924/01079H01L2924/01322H01L2924/10253H01L2924/12044H01L2924/15311H01L2924/16152H01L2924/3011H01L2924/00
    • A thermally conductive material that includes an alloy which includes indium, zinc, magnesium or a combination thereof is described herein. Also, a semiconductor package comprising a thermal interface material which includes solder and particles dispersed throughout the solder, the particles being of thermal conductivity greater than or equal to about 80 W/m-K is described herein. In one described embodiment, a semiconductor package includes a thermal interface material which includes at least one lanthanide element. In yet another embodiment disclosed herein, a solder preform construction includes a solder and a structure within the solder, the solder being of a first composition and the structure being of a second composition which has a lower melting point than the first composition. In another embodiment disclosed herein, an assembly comprising: a heat spreader; and a solder preform construction bonded to the heat spreader, the solder preform construction including a solder of a first composition, and a region within the solder of a second composition which has a lower melting point than the first composition. Methods of forming layered thermal interface materials and thermal transfer materials include: a) providing a heat spreader component, wherein the heat spreader component comprises a top surface, a bottom surface and at least one heat spreader material; b) providing at least one solder material, wherein the solder material is directly deposited onto the bottom surface of the heat spreader component; and c) depositing the at least one solder material onto the bottom surface of the heat spreader component.
    • 本文描述了包括包含铟,锌,镁或其组合的合金的导热材料。 此外,本文描述了包括热界面材料的半导体封装,其包括分布在整个焊料中的焊料和颗粒,该导热系数大于或等于约80W / m-K的颗粒。 在一个所描述的实施例中,半导体封装包括包含至少一种镧系元素的热界面材料。 在本文公开的另一个实施例中,焊料预制件构造包括焊料和焊料内的结构,焊料是第一组成,并且该结构是具有比第一组合物更低的熔点的第二组成。 在本文公开的另一实施例中,一种组件包括:散热器; 以及焊料预制件结构,其结合到所述散热器,所述焊料预制件构造包括第一组合物的焊料,以及第二组合物的焊料内的区域,其具有比所述第一组成物更低的熔点。 形成层状热界面材料和热转印材料的方法包括:a)提供散热器部件,其中散热器部件包括顶表面,底表面和至少一个散热器材料; b)提供至少一种焊料材料,其中焊料材料直接沉积到散热器部件的底表面上; 以及c)将所述至少一种焊料材料沉积到所述散热器部件的底表面上。