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    • 1. 发明授权
    • Polishing method and apparatus
    • 抛光方法和设备
    • US08454407B2
    • 2013-06-04
    • US12511344
    • 2009-07-29
    • Taro TakahashiMotohiro NiijimaAkihiko Ogawa
    • Taro TakahashiMotohiro NiijimaAkihiko Ogawa
    • B24B49/12
    • B24B37/013B24B49/105
    • A polishing method polishes and planarizes a substrate. The substrate is pressed against a polishing surface on a rotating polishing table. During polishing, the polishing table is rotated, and the surface, being polished, of the substrate is scanned by an eddy current sensor provided in the polishing table. An output of the eddy current sensor is monitored, and substrate damage is detected from a change in the output of the eddy current sensor. Further, an output of an end point detecting sensor obtained by scanning the surface of the substrate is monitored, and the polishing end point is detected from a change in the output of the end point detecting sensor. After detecting the polishing end point, an output of the end point detecting sensor or another sensor is monitored, and detecting a film left on a part of the substrate is performed.
    • 抛光方法抛光和平坦化基底。 将衬底压在旋转的抛光台上的抛光表面上。 在抛光期间,抛光台旋转,并且通过设置在抛光台中的涡流传感器扫描基板的抛光表面。 监测涡流传感器的输出,并根据涡流传感器输出的变化检测基板损坏。 此外,监视通过扫描基板的表面而获得的端点检测传感器的输出,并且根据端点检测传感器的输出的变化来检测抛光终点。 在检测到抛光终点之后,监测端点检测传感器或另一传感器的输出,并且检测留在基板的一部分上的膜。
    • 2. 发明申请
    • POLISHING METHOD AND APPARATUS
    • 抛光方法和装置
    • US20100035516A1
    • 2010-02-11
    • US12511344
    • 2009-07-29
    • Taro TAKAHASHIMotohiro NiijimaAkihiko Ogawa
    • Taro TAKAHASHIMotohiro NiijimaAkihiko Ogawa
    • B24B49/00
    • B24B37/013B24B49/105
    • The present invention relates to a polishing method and apparatus for polishing and planarizing an object to be polished (substrate) such as a semiconductor wafer. The substrate as an object to be polished is pressed against a polishing surface on a rotating polishing table in the polishing method. During polishing of the substrate, the polishing table is rotated, and the surface, being polished, of the substrate is scanned by an eddy current sensor provided in the polishing table. An output of the eddy current sensor obtained by scanning the surface, being polished, of the substrate is monitored, and damage of the substrate is detected from a change in the output of the eddy current sensor. Further, an output of an endpoint detecting sensor obtained by scanning the surface, being polished, of the substrate is monitored, and the polishing end point is detected from a change in the output of the end point detecting sensor. After detecting the polishing end point, an output of the endpoint detecting sensor or a different sensor is monitored, and monitoring of the remaining film for detecting a film left on a part of the substrate is performed.
    • 本发明涉及用于抛光和平面化待抛光物体(衬底)如半导体晶片的抛光方法和装置。 作为研磨对象的基板在研磨方法中被压靠在旋转研磨台上的研磨面上。 在抛光基板期间,旋转抛光台,并且通过设置在抛光台中的涡流传感器来扫描基板的抛光表面。 监测通过扫描基板表面而获得的涡流传感器的输出,并根据涡电流传感器的输出的变化来检测基板的损坏。 此外,监视通过扫描基板的表面而获得的端点检测传感器的输出,并根据端点检测传感器的输出的变化来检测抛光终点。 在检测到抛光终点之后,监视端点检测传感器或不同传感器的输出,并且执行用于检测留在基板的一部分上的膜的剩余膜的监视。
    • 3. 发明申请
    • Polishing monitoring method, polishing apparatus and monitoring apparatus
    • 抛光监测方法,抛光装置和监测装置
    • US20090096446A1
    • 2009-04-16
    • US12285674
    • 2008-10-10
    • Taro TakahashiYoichi KobayashiShinrou OhtaAkihiko Ogawa
    • Taro TakahashiYoichi KobayashiShinrou OhtaAkihiko Ogawa
    • G01B7/06
    • G01B7/105
    • The present invention provides a method for monitoring a change in thickness of a conductive film brought into sliding contact with a polishing surface of a polishing pad using an eddy current sensor. The output signal of the eddy current sensor comprises two signals corresponding to a resistance component and an inductive reactance component of an impedance of an electric circuit including a coil of the eddy current sensor. The method includes acquiring the output signal of the eddy current sensor when the eddy current sensor is facing the conductive film, defining the two signals as coordinates on a coordinate system, repeating the acquiring of the output signal and the defining of the coordinates, determining a center of curvature of an arc specified by at least three sets of coordinates on the coordinate system, determining an angle of inclination of a line connecting the center of curvature and a latest one of the at least three sets of coordinates, and monitoring a change in thickness of the conductive film by monitoring a change in the angle of inclination.
    • 本发明提供一种用于使用涡流传感器监测与抛光垫的抛光表面滑动接触的导电膜的厚度变化的方法。 涡电流传感器的输出信号包括对应于包括涡流传感器的线圈的电路的阻抗的电阻分量和电抗分量的两个信号。 该方法包括当涡流传感器面向导电膜时获取涡流传感器的输出信号,将两个信号定义为坐标系上的坐标,重复获取输出信号和定义坐标,确定 由坐标系上的至少三组坐标指定的圆弧的曲率中心,确定连接曲率中心的直线和最小三个坐标系中的最近一个的线的倾斜角度, 通过监测倾斜角度的变化来确定导电膜的厚度。
    • 6. 发明授权
    • Polishing monitoring method, polishing apparatus and monitoring apparatus
    • 抛光监测方法,抛光装置和监测装置
    • US09068814B2
    • 2015-06-30
    • US12285674
    • 2008-10-10
    • Taro TakahashiYoichi KobayashiShinrou OhtaAkihiko Ogawa
    • Taro TakahashiYoichi KobayashiShinrou OhtaAkihiko Ogawa
    • G01B7/06
    • G01B7/105
    • A method monitors a change in thickness of a conductive film brought into sliding contact with a polishing surface of a polishing pad using an eddy current sensor. The output signal of the eddy current sensor includes two signals corresponding to a resistance component and an inductive reactance component of an impedance of an electric circuit including a coil of the eddy current sensor. The method includes acquiring the output signal of the eddy current sensor when the eddy current sensor is facing the conductive film, defining the two signals as coordinates on a coordinate system, repeating the acquiring of the output signal and the defining of the coordinates, determining a center of curvature of an arc specified by at least three sets of coordinates on the coordinate system, determining an angle of inclination of a line connecting the center of curvature and a latest one of the at least three sets of coordinates, and monitoring a change in thickness of the conductive film by monitoring a change in the angle of inclination.
    • 一种方法使用涡流传感器监测与抛光垫的抛光表面滑动接触的导电膜的厚度变化。 涡电流传感器的输出信号包括对应于包括涡流传感器的线圈的电路的阻抗的电阻分量和电抗分量的两个信号。 该方法包括当涡流传感器面向导电膜时获取涡流传感器的输出信号,将两个信号定义为坐标系上的坐标,重复获取输出信号和定义坐标,确定 由坐标系上的至少三组坐标指定的圆弧的曲率中心,确定连接曲率中心的直线和最小三个坐标系中的最近一个的线的倾斜角度, 通过监测倾斜角度的变化来确定导电膜的厚度。
    • 7. 发明授权
    • Vacuum lamination device and a vacuum lamination method
    • 真空层压装置和真空层压方法
    • US6041840A
    • 2000-03-28
    • US74375
    • 1998-05-08
    • Akihiko Ogawa
    • Akihiko Ogawa
    • B29C43/36B29C43/18B29C43/20B29C43/34B29C43/56B29L9/00B29L31/34H05K3/02B32B31/00
    • B32B37/1018B29C2043/3647H05K3/022
    • Film bodies are provided on opposing surfaces of an upper platen and a lower platen, and a frame is provided on the lower platen. The frame forms a forming room when the upper platen and the lower platen are brought close to each other. One film body is fixed on a heater having a given flexibility and rigidity. The upper platen includes a flow path through which a coolant is circulated. A recessed portion is formed on the lower surface of the upper platen under the film body. The material to be formed is pressurized by the film bodies due to a pressure reduction caused by depressurizing the forming room without reducing its capacity, in a state in which the film body is separated from the recessed portion and heated by the heater. Then, the material is cooled while in tight contact with the recessed portion.
    • 膜体设置在上压板和下压板的相对表面上,框架设置在下压板上。 当上压板和下压板彼此靠近时,框架形成成形室。 一个胶片体固定在具有给定柔韧性和刚度的加热器上。 上压板包括冷却剂循环通过的流路。 在薄膜主体下方的上板的下表面上形成有凹部。 在膜体与凹部分离并被加热器加热的状态下,由于由成形室减压引起的压力降低,膜形成体的材料被膜体加压而不降低其容量。 然后,与凹部紧密接触地冷却材料。