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    • 2. 发明授权
    • Semiconductor sensor
    • 半导体传感器
    • US5279162A
    • 1994-01-18
    • US848693
    • 1992-03-09
    • Katsuhiko TakebeMizuho DoiHiroyasu TakeharaSatoshi HiyamaMasanobu Urabe
    • Katsuhiko TakebeMizuho DoiHiroyasu TakeharaSatoshi HiyamaMasanobu Urabe
    • G01P15/08G01P15/12G01L9/00H01L29/84
    • G01P15/123G01P15/0802G01P15/124G01P2015/0828H01L2224/48091H01L2924/12032H01L2924/13091Y10S73/04
    • This invention relates to a semiconductor sensor for detecting external physical forces, such as acceleration, contact pressures, air pressures, mechanical vibrations, etc. The semiconductor sensor according to this invention is characterized by the use of compound semiconductors of high piezoelectricity, such as GaAs, etc. Conventionally sensors of the cantilever type, diaphragm type, etc. are made of silicon. These prior art sensors have low detection sensitivity, and their characteristics tend to deteriorate. The sensor according to this invention is made of GaAs, which has high piezoelectricity and can retain good characteristics of the semiconductor even at high temperatures and includes a field-effect transistor formed on the GaAs for sensing a stress. The FET is driven by a constant current or a constant voltage so as to detect a change of an electrical characteristic (e.g., threshold characteristic) due to a stress. The structure of the sensor according to this invention enables the sizes of the sensors not only to be diminished but also to reduce the fabrication costs. When a stress is applied to the FET, the transconductance changes, and the temperature changes, consequently the I-V characteristic changes. An a.c. signal biased by a direct current is supplied to the gate of the FET, and a drain current is detected in an a.c. component and a d.c. component so as to detect a temperature concurrently with a detection of a stress.
    • 本发明涉及用于检测诸如加速度,接触压力,空气压力,机械振动等外部物理力的半导体传感器。根据本发明的半导体传感器的特征在于使用高压电性的化合物半导体,例如GaAs 等等。常规地,悬臂式,隔膜式等的传感器由硅制成。 这些现有技术的传感器具有低检测灵敏度,并且它们的特性趋于恶化。 根据本发明的传感器由GaAs制成,其具有高压电性,并且即使在高温下也能保持半导体的良好特性,并且包括形成在GaAs上用于感测应力的场效应晶体管。 FET由恒定电流或恒定电压驱动,以便检测由于应力引起的电特性(例如,阈值特性)的变化。 根据本发明的传感器的结构使得传感器的尺寸不仅可以减小,而且可以降低制造成本。 当FET施加应力时,跨导变化,温度变化,I-V特性变化。 一个 通过直流电流偏置的信号被提供给FET的栅极,并且以直流方式检测漏极电流。 组件和直径 以便与应力的检测同时检测温度。
    • 3. 发明申请
    • Magnetostrictive Torque Sensor and Electric Power Steering Apparatus
    • 磁致伸缩转矩传感器和电动转向装置
    • US20080314163A1
    • 2008-12-25
    • US12143588
    • 2008-06-20
    • Hitoshi HARATAYuichi FUKUDAYukiya KASHIMURAMizuho DOI
    • Hitoshi HARATAYuichi FUKUDAYukiya KASHIMURAMizuho DOI
    • G01L3/00
    • G01L3/102G01L3/105
    • This magnetostrictive torque sensor 10 includes a rotating shaft 11 used to rotate according to an input torque and provided with magnetostrictive films 14A and 14B, an excitation coil 12 configured to apply an alternating magnetic field 31 to the magnetostrictive film, and detection coils 13A and 13B each of which detects a change in the magnetic characteristic of an associated one of the magnetostrictive films. The magnetostrictive torque sensor is configured so that a bias magnetic field is added to the alternating magnetic field from a bias power supply 17 so as to satisfy the following conditions: Hm −Hin>−Hn where Hm (>0) is an applied magnetic field corresponding to a maximum magnetic permeability obtained according to a magnetic hysteresis curve 34 of the magnetostrictive film, which shows magnetization caused by the alternating magnetic field, Hn (>0) is an applied magnetic field corresponding to an end of a range in which a discontinuous magnetization is performed, and Hin (>0) is an applied magnetic field that determines a sensitivity range to be set on a magnetostrictive sensitivity curve representing a magnetostrictive sensitivity exhibited by the magnetostrictive film.
    • 该磁致伸缩转矩传感器10包括用于根据输入转矩旋转并设置有磁致伸缩膜14A和14B的旋转轴11,被配置为向磁致伸缩膜施加交变磁场31的励磁线圈12以及检测线圈13A和13B 其中的每一个检测相关联的一个磁致伸缩膜的磁特性的变化。 磁致伸缩扭矩传感器被构造成使得偏置磁场从偏置电源17加到交变磁场上,以满足以下条件:<?in-line-formula description =“In-line formula”end = “铅”?> Hm <?in-line-formula description =“In-line Formulas”end =“lead”?> - Hm> -Hin > -Hn <?in-line-formula description =“In-line Formulas”end =“tail”?>其中Hm(> 0)是对应于根据磁滞曲线34获得的最大磁导率的施加磁场 表示由交变磁场引起的磁化的磁致伸缩膜Hn(> 0)是对应于进行不连续磁化的范围的结束的施加磁场,Hin(> 0)是施加磁场 确定在磁致伸缩敏感度曲线上设定的灵敏度范围,该灵敏度曲线表示由磁致伸缩薄膜表现的磁致伸缩灵敏度。
    • 5. 发明申请
    • Magnetostrictive torque sensor and electrically powered steering apparatus using same
    • 磁致伸缩转矩传感器和使用其的电动转向装置
    • US20070074589A1
    • 2007-04-05
    • US11542142
    • 2006-10-04
    • Hitoshi HarataMizuho DoiHitoshi KarasawaTomohiro HoshiYukiya Kashimura
    • Hitoshi HarataMizuho DoiHitoshi KarasawaTomohiro HoshiYukiya Kashimura
    • G01L3/00
    • B62D6/10G01L3/102G01L3/103
    • A magnetostrictive torque sensor comprising a first magnetostrictive film, a second magnetostrictive film, and a third magnetostrictive film formed over the entire circumferential periphery of a surface of a rotating shaft. A first sensor coil, a second sensor coil, and a third sensor coil for sensing changes in impedance are provided for the first, second, and third magnetostrictive films, respectively. Signals according to the changes in impedance outputted from the first through third sensor coils are inputted to a torque calculating unit. The torque calculating unit calculates the torque applied to the rotating shaft on the basis of the output signal from the first sensor coil and the output signal from the second sensor coil. Furthermore, the output signals from the first through third sensor coils are compared, and failures in the first magnetostrictive film or the second magnetostrictive film are detected by a failure detector.
    • 一种磁致伸缩扭矩传感器,包括在旋转轴的表面的整个圆周周围形成的第一磁致伸缩膜,第二磁致伸缩膜和第三磁致伸缩膜。 分别为第一,第二和第三磁致伸缩膜提供第一传感器线圈,第二传感器线圈和用于感测阻抗变化的第三传感器线圈。 根据从第一至第三传感器线圈输出的阻抗的变化的信号被输入到转矩计算单元。 扭矩计算单元基于来自第一传感器线圈的输出信号和来自第二传感器线圈的输出信号来计算施加到旋转轴的扭矩。 此外,比较来自第一至第三传感器线圈的输出信号,并且通过故障检测器检测第一磁致伸缩膜或第二磁致伸缩膜中的故障。
    • 9. 发明授权
    • Magnetostrictive torque sensor and electrically powered steering apparatus using same
    • 磁致伸缩转矩传感器和使用其的电动转向装置
    • US07497132B2
    • 2009-03-03
    • US11542142
    • 2006-10-04
    • Hitoshi HarataMizuho DoiHitoshi KarasawaTomohiro HoshiYukiya Kashimura
    • Hitoshi HarataMizuho DoiHitoshi KarasawaTomohiro HoshiYukiya Kashimura
    • G01L3/00
    • B62D6/10G01L3/102G01L3/103
    • A magnetostrictive torque sensor comprising a first magnetostrictive film, a second magnetostrictive film, and a third magnetostrictive film formed over the entire circumferential periphery of a surface of a rotating shaft. A first sensor coil, a second sensor coil, and a third sensor coil for sensing changes in impedance are provided for the first, second, and third magnetostrictive films, respectively. Signals according to the changes in impedance outputted from the first through third sensor coils are inputted to a torque calculating unit. The torque calculating unit calculates the torque applied to the rotating shaft on the basis of the output signal from the first sensor coil and the output signal from the second sensor coil. Furthermore, the output signals from the first through third sensor coils are compared, and failures in the first magnetostrictive film or the second magnetostrictive film are detected by a failure detector.
    • 一种磁致伸缩扭矩传感器,包括在旋转轴的表面的整个圆周周围形成的第一磁致伸缩膜,第二磁致伸缩膜和第三磁致伸缩膜。 分别为第一,第二和第三磁致伸缩膜提供第一传感器线圈,第二传感器线圈和用于感测阻抗变化的第三传感器线圈。 根据从第一至第三传感器线圈输出的阻抗的变化的信号被输入到转矩计算单元。 扭矩计算单元基于来自第一传感器线圈的输出信号和来自第二传感器线圈的输出信号来计算施加到旋转轴的扭矩。 此外,比较来自第一至第三传感器线圈的输出信号,并且通过故障检测器检测第一磁致伸缩膜或第二磁致伸缩膜中的故障。