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1. 发明授权

US08482983B2 Nonvolatile semiconductor memory device which transfers a plurality of voltages to memory cells and method of writing the same 失效
标题翻译：将多个电压传送到存储单元的非易失性半导体存储器件及其写入方法
公开(公告)号：US08482983B2
公开(公告)日：2013-07-09
申请号：US12855134
申请日：2010-08-12
申请人： Mitsuaki Honma
发明人： Mitsuaki Honma
IPC分类号： G11C11/34
CPC分类号： G11C16/10 , G11C16/3454 , G11C16/3459
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array, a bit line, and a voltage generator. The memory cell array includes each of a plurality of memory cells. Each of the memory cells includes a charge storage layer and a control gate and is capable of holding two or more levels of data. The bit line is capable of transferring data to the memory cells in a one-to-one correspondence. The voltage generator carries out a verify operation by applying a verify voltage to the memory cells after performing first writing by applying a first voltage and then a second voltage lower than the first voltage to the control gate.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括存储单元阵列，位线和电压发生器。存储单元阵列包括多个存储单元中的每一个。每个存储单元包括电荷存储层和控制栅极，并且能够保持两个或更多个数据级别。位线能够以一一对应的方式将数据传送到存储单元。电压发生器通过向控制栅极施加第一电压，然后施加低于第一电压的第二电压，在进行第一次写入之后，向存储单元施加验证电压来执行验证操作。

2. 发明授权

US08332726B2 Non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08332726B2
公开(公告)日：2012-12-11
申请号：US13310003
申请日：2011-12-02
申请人： Hironori Uchikawa , Tatsuyuki Ishikawa , Mitsuaki Honma
发明人： Hironori Uchikawa , Tatsuyuki Ishikawa , Mitsuaki Honma
IPC分类号： G11C29/00
CPC分类号： G06F11/1068 , G11C2029/0411
摘要： A non-volatile semiconductor memory device comprises a memory cell array including a plurality of memory cells arrayed capable of storing information in accordance with variations in threshold voltage. A likelihood calculator has a plurality of likelihood calculation algorithms for deriving a likelihood value about a stored data bit from a threshold value read out of the memory cell. An error correction unit executes error correction through iterative processing using the likelihood value obtained at the likelihood calculator. A likelihood calculator controller changes among the likelihood calculation algorithms in the likelihood calculator based on a certain value of the number of iterations in the iterative processing obtained from the error correction unit.
摘要翻译：非易失性半导体存储器件包括存储单元阵列，该存储单元阵列包括能够根据阈值电压的变化存储信息的多个存储单元。似然度计算器具有多个似然计算算法，用于从从存储单元读出的阈值中导出关于存储的数据位的似然值。错误校正单元通过使用在似然度计算器获得的似然值的迭代处理执行纠错。似然度计算器控制器根据从误差校正单元获得的迭代处理中的迭代次数的一定值，在似然度计算器中的似然计算算法中进行变化。

3. 发明申请

US20110205805A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM 失效
标题翻译：非易失性半导体存储器件和存储器系统
公开(公告)号：US20110205805A1
公开(公告)日：2011-08-25
申请号：US12672335
申请日：2008-09-02
申请人： Mitsuaki Honma , Noboru Shibata
发明人： Mitsuaki Honma , Noboru Shibata
IPC分类号： G11C16/06
CPC分类号： G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C2211/5646
摘要： A semiconductor memory device executes a writing operation based on a first bit assignment pattern at the time of writing. The first bit assignment pattern is created such that pieces of x-bit data assigned to adjacent threshold distributions have only a one-bit difference therebetween and an alignment of data on the same digit of 2x pieces of x-bit data corresponding to an alignment of 2x pieces of threshold distributions contains at least two transition points of “0” and “1”. The semiconductor memory device operates at the time of reading such that a read voltage corresponding to the transition points of “0” and “1” is applied to the word line on a page basis to determine x-bit data stored in the memory cell one-bit by one-bit based on the first assignment pattern. The page contains a set of data on the same digit bit in pieces of x-bit data stored in the memory cells connected to the word line.
摘要翻译：半导体存储器件在写入时基于第一位分配模式执行写入操作。第一位分配模式被创建，使得分配给相邻阈值分布的X位数据片段之间只有一位差异，并且对应于与x位数据对齐的2个x位数据的相同数位上的数据对齐 2个阈值分布包含至少两个转换点“0”和“1”。半导体存储器件在读取时操作，使得对应于“0”和“1”的转换点的读取电压在页面上施加到字线，以确定存储在存储器单元中的x位数据 - 基于第一个分配模式位1比特。该页面包含存储在连接到字线的存储单元中的x位数据的相同位数位上的一组数据。

4. 发明授权

US07852685B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07852685B2
公开(公告)日：2010-12-14
申请号：US12406552
申请日：2009-03-18
申请人： Kiyoaki Iwasa , Mitsuaki Honma
发明人： Kiyoaki Iwasa , Mitsuaki Honma
IPC分类号： G11C7/10
CPC分类号： G11C7/1006 , G11C7/1051 , G11C7/1063 , G11C2207/105 , H04L25/4915
摘要： A semiconductor memory device comprises a first exclusive-OR circuit which compares mth N-bit first data with (m+1)th N-bit second data, a majority circuit which generates flag data to invert the second data if a comparison result of the first exclusive-OR circuit indicates that the number of mismatch bits between the first data and the second data is not less than N/2, and generates flag data to noninvert the second data if the number of mismatch bits between the first data and the second data is less than N/2, a second exclusive-OR circuit which inverts or noninverts the second data based on the flag data, a shift register which stores the flag data generated by the majority circuit, and a pad to serially output both the inverted or noninverted second data and the flag data.
摘要翻译：半导体存储器件包括第一异或电路，其将第N个第N数据与第（m + 1）个N位第二数据进行比较，多数电路产生标志数据以反转第二数据，如果比较结果为第一异或电路指示第一数据和第二数据之间的失配比特数不小于N / 2，并且如果第一数据和第二异或电路之间的失配比特数不同，则生成用于非转换第二数据的标志数据数据小于N / 2，第二异或电路基于标志数据反转或不反相第二数据，存储由多数电路产生的标志数据的移位寄存器和用于串行输出两个反相或非反相的第二数据和标志数据。

5. 发明申请

US20100124109A1 SEMICONDUCTOR MEMORY DEVICE FOR STORING MULTI LEVEL DATA 审中-公开
标题翻译：用于存储多级数据的半导体存储器件
公开(公告)号：US20100124109A1
公开(公告)日：2010-05-20
申请号：US12562439
申请日：2009-09-18
申请人： Mitsuaki HONMA , Noboru Shibata
发明人： Mitsuaki HONMA , Noboru Shibata
IPC分类号： G11C16/04 , G11C7/10
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/3418 , G11C2211/5621 , G11C2211/5642 , G11C2211/5646
摘要： A memory cell array is configured so that a plurality of memory cells which are connected to a word line and a bit line store one value out of n values (n is a natural number of 2 or more) in one memory cell and are arranged in a matrix. A control circuit controls electronic potentials of the word line and the bit line in response to input data to write data in the memory cells. When writing data in the first memory cell of the memory cell array, the control circuit varies a writing level on the basis of writing data to write in a second memory cell adjacent to the first memory cell.
摘要翻译：存储单元阵列被配置为使得连接到字线和位线的多个存储单元存储在一个存储单元中的n个值（n是2或更多的自然数）中的一个值，并且被布置在一个矩阵。控制电路响应于输入数据来控制字线和位线的电位，以将数据写入存储单元。当在存储单元阵列的第一存储单元中写入数据时，控制电路基于写入数据而改变写入电平以写入与第一存储单元相邻的第二存储单元。

6. 发明申请

US20080117687A1 NONVOLATILE SEMICONDUCTOR MEMORY 失效
标题翻译：非易失性半导体存储器
公开(公告)号：US20080117687A1
公开(公告)日：2008-05-22
申请号：US11940736
申请日：2007-11-15
申请人： Mitsuaki Honma , Katsuaki Isobe
发明人： Mitsuaki Honma , Katsuaki Isobe
IPC分类号： G11C16/08 , G11C8/00
CPC分类号： G11C16/0483 , G11C16/20 , G11C29/02 , G11C29/021 , G11C29/028 , G11C29/48 , G11C2029/5004
摘要： A nonvolatile semiconductor memory for setting control voltages to be supplied to an internal circuit, to an external reference voltage inputted from outside, has a parameter control circuit. The parameter control circuit causes a parameter register to sequentially output the plurality of parameters to a voltage generating control circuit. The parameter control circuit counts, for a fixed period of time, the number of oscillations of each of the trimming flag signals sequentially outputted from the voltage generating control circuit in response to the parameters. The parameter control circuit stores counted values corresponding to the parameters. The parameter control circuit selects the parameter having a maximum counted value as a parameter corresponding to the control voltage closest to the external reference voltage.
摘要翻译：用于将向内部电路提供的控制电压设置为从外部输入的外部参考电压的非易失性半导体存储器具有参数控制电路。参数控制电路使参数寄存器顺序地将多个参数输出到电压产生控制电路。参数控制电路在固定的时间段内，根据参数从电压产生控制电路顺序输出的每个修整标志信号的振荡次数进行计数。参数控制电路存储对应于参数的计数值。参数控制电路选择具有最大计数值的参数作为与最接近外部参考电压的控制电压对应的参数。

7. 发明申请

US20060227602A1 Semiconductor memory device 失效
公开(公告)号：US20060227602A1
公开(公告)日：2006-10-12
申请号：US11352363
申请日：2006-02-13
申请人： Mitsuaki Honma , Noboru Shibata
发明人： Mitsuaki Honma , Noboru Shibata
IPC分类号： G11C16/04 , G11C11/34
CPC分类号： G11C11/5642 , G11C16/26 , G11C16/3454 , G11C2211/5621 , G11C2211/5641
摘要： A semiconductor memory device includes: a memory cell array having a plurality of memory cells arranged therein; and a sense amplifier circuit configured to read data of the memory cell array, wherein a comparison operation is performed between read out data from the memory cell array and externally supplied expectance data in the sense amplifier circuit.

8. 发明授权

US06401867B1 Lubricant supply system 有权
标题翻译：润滑油供应系统
公开(公告)号：US06401867B1
公开(公告)日：2002-06-11
申请号：US09288619
申请日：1999-04-09
申请人： Hidekazu Michioka , Mitsuaki Honma
发明人： Hidekazu Michioka , Mitsuaki Honma
IPC分类号： F16C1700
CPC分类号： F16C29/0609 , B23Q1/58 , B23Q11/124 , F16C29/0647 , F16C29/0695 , F16C33/6622 , F16C33/6648 , F16C2322/39
摘要： A lubricant supplying unit preferable for a linear motion apparatus such as a linear guide unit and a ball screw unit, always capable of coating all rolling body rolling grooves formed on a track shaft with an equal amount of lubricant regardless of a difference in the mounting posture of the track shaft with respect to a fixing unit, is provided. A lubricant supplying system for achieving such an object comprises a casing fixed to the slide member, a plurality of coating pieces which are protruded from plural positions of the casing so that they are in contact with the track shaft for coating the track shaft with lubricant and a lubricant accommodating chamber provided in the casing for supplying lubricant to the coating piece, wherein the plurality of the coating pieces are divided to groups consisting of one or two or more adjacent coating pieces and the lubricant accommodating chambers is formed for each of the groups.
摘要翻译：润滑剂供给单元优选用于线性引导单元和滚珠丝杠单元等直线运动装置，总是能够以等量的润滑剂涂覆形成在轨道轴上的所有滚动体滚动槽，而不管安装姿势的差异的轨道轴相对于定影单元。用于实现这种物体的润滑剂供应系统包括固定到滑动构件的壳体，多个涂层片，其从壳体的多个位置突出，使得它们与用于用润滑剂涂覆轨道轴的轨道轴接触，设置在所述壳体中用于向所述涂层供给润滑剂的润滑剂容纳室，其中所述多个涂层被分成由一个或两个或更多个相邻涂层组成的组，并且为每个组形成润滑剂容纳室。

9. 发明授权

US6116783A Ball chain 有权
标题翻译：球链
公开(公告)号：US6116783A
公开(公告)日：2000-09-12
申请号：US142139
申请日：1998-09-02
申请人： Takeki Shirai , Shigeru Ebina , Mitsuaki Honma , Tomozumi Murata
发明人： Takeki Shirai , Shigeru Ebina , Mitsuaki Honma , Tomozumi Murata
IPC分类号： F16C29/06 , F16C33/38 , F16C33/41
CPC分类号： F16C29/0657 , F16C33/3825 , F16C33/416 , F16C2220/04
摘要： The present invention relates to a ball chain used by being integrated to, for example, a ball endless track of a linear guide device for endless sliding in which a number of balls are arranged in one row and rollably held, particularly to a ball chain which is most pertinent to a linear guide device having a ball rolling groove in a shape of a Gothic arch. According to the ball chain, the number of balls are arranged in one row and the balls are held rollably, each of the balls is pinched by a pair of spherical seats and the spherical seats are connected to each other by flange portions to thereby constitute a ball holding unit and a plurality of the ball holding units are connected in a shape of a rosary by a flexible connecting portion. Further, the spherical seats and the flange portions are molded by a resin material whereas the connecting portion is formed by a material having a tensile strength larger than that of the resin material.
摘要翻译： PCT No.PCT / JP98 / 00120 Sec。 371日期：1998年9月2日 102（e）1998年9月2日PCT 1998年1月14日PCT PCT。第WO98 / 31945号公报日期：1998年7月23日本发明涉及一种球链，其通过集成到例如用于环形滑动的直线导引装置的球环形轨道中，其中多个球排列成一排并且可滚动地保持，特别是涉及一种与具有哥特式拱形的滚珠滚动槽的直线导向装置最相关的球链。根据球链，球的数量排成一列，滚珠保持滚动，每个球被一对球形座夹住，球形座通过凸缘部彼此连接从而构成球保持单元和多个球保持单元通过柔性连接部分连接为念珠的形状。此外，球形座和凸缘部分由树脂材料模制，而连接部分由具有大于树脂材料的抗拉强度的材料形成。

10. 发明授权

US6012848A Endless sliding guide apparatus 失效
标题翻译：无尽的滑动导向装置
公开(公告)号：US6012848A
公开(公告)日：2000-01-11
申请号：US66946
申请日：1998-04-28
申请人： Hidekazu Michioka , Hiroshi Takamatsu , Mitsuaki Honma
发明人： Hidekazu Michioka , Hiroshi Takamatsu , Mitsuaki Honma
IPC分类号： F16C29/06 , F16C33/66 , F16C19/00 , F16C29/04
CPC分类号： F16C29/0659 , F16C29/0602 , F16C29/0607 , F16C33/66
摘要： An endless sliding guide apparatus including a track rail, a sliding table having an endless track comprising a load rolling path, a no-load rolling path and a change direction path and rolling bodies wherein at least one of the no-load rolling path, the inner peripheral portion of the change direction path and a rolling body retaining section of the load rolling path is formed by synthetic resin rolling body guide members formed by insert molding using a bearing race as a core. The rolling body guide members are molded by a synthetic resin composition satisfying the relational expression of (a.times.b).div.c.gtoreq.700 Mpa with respect to the tensile strength a (MPa), tensile elongation b (%) and shrinkage c (%). The endless sliding guide apparatus of the present invention has the advantages that since the endless track of the sliding table is accurately formed, the rolling of the rolling bodies along the endless track is quite smooth, the noise level is minimized and not only the manufacture of the sliding table can be automated but also the problem of "corner cracks" in the synthetic resin rolling body guide members can be eliminated thereby extending the working life of the apparatus.
摘要翻译：一种环形滑动导引装置，包括轨道轨道，具有包括负载滚动路径，空载滚动路径和改变方向路径的环形轨道的滑动台，以及滚动体，其中空载滚动路径，改变方向路径的内周部分和负载滚动路径的滚动体保持部分由通过使用轴承座圈作为芯的插入成型形成的合成树脂滚动体引导构件形成。轧制体导向部件由拉伸强度a（MPa），拉伸伸长率b（％）和收缩率c（％）相对于（axb）DIVIDED c> = 700Mpa的关系式的合成树脂组合物成型。。本发明的环形滑动导向装置的优点在于，由于滑台的环形轨道被精确地形成，所以滚动体沿着循环轨道的滚动非常平滑，噪声水平被最小化，并且不仅制造滑动台可以自动化，而且可以消除合成树脂滚动体引导构件中的“角裂纹”的问题，从而延长了设备的使用寿命。

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