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    • 3. 发明授权
      US6069043A Method of making punch-through field effect transistor 失效
    • Method of making punch-through field effect transistor
    • 制造穿通场效应晶体管的方法
    • US6069043A
    • 2000-05-30
    • US962885
    • 1997-11-12
    • Brian H. Floyd , Fwu-Iuan Hshieh , Mike F. Chang
    • Brian H. Floyd , Fwu-Iuan Hshieh , Mike F. Chang
    • H01L21/336 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/423 , H01L29/772 , H01L29/78
    • H01L29/7722 , H01L29/402 , H01L29/407 , H01L29/42376 , H01L29/7802 , H01L29/7813 , H01L29/7827 , H01L29/0847
    • A trenched field effect transistor suitable especially for low voltage power applications provides low leakage blocking capability due to a gate controlled barrier region between the source region and drain region. Forward conduction occurs through an inversion region between the source region and drain region. Blocking is achieved by a gate controlled depletion barrier. Located between the source and drain regions is a fairly lightly doped body region. The gate electrode, located in a trench, extends through the source and body regions and in some cases into the upper portion of the drain region. The dopant type of the polysilicon gate electrode is the same type as that of the body region. The body region is a relatively thin and lightly doped epitaxial layer grown upon a highly doped low resistivity substrate of opposite conductivity type. In the blocking state the epitaxial body region is depleted due to applied drain-source voltage, hence a punch-through type condition occurs vertically. Lateral gate control increases the effective barrier to the majority carrier flow and reduces leakage current to acceptably low levels.
    • 适合于低电压功率应用的沟槽场效应晶体管由于源极区和漏极区之间的栅极控制势垒区而提供低泄漏阻挡能力。 通过源极区域和漏极区域之间的反转区域发生正向导通。 封闭通过栅极控制的耗尽屏障实现。 位于源极和漏极区之间是相当轻掺杂的体区。 位于沟槽中的栅电极延伸穿过源极和体区，并且在一些情况下延伸到漏极区的上部。 多晶硅栅电极的掺杂剂类型与体区相同。 体区是在相对导电类型的高掺杂低电阻率衬底上生长的相对薄且轻掺杂的外延层。 在阻塞状态下，外延体区域由于施加的漏极 - 源极电压而耗尽，因此穿通型状态垂直发生。 横向栅极控制增加了大多数载流子的有效屏障，并将泄漏电流降低到可接受的低水平。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 5. 发明授权
      US5917216A Trenched field effect transistor with PN depletion barrier 失效
    • Trenched field effect transistor with PN depletion barrier
    • 具有PN耗尽势垒的沟槽场效应晶体管
    • US5917216A
    • 1999-06-29
    • US742326
    • 1996-10-31
    • Brian H. Floyd , Dorman C. Pitzer , Fwu-Iuan Hshieh , Mike F. Chang
    • Brian H. Floyd , Dorman C. Pitzer , Fwu-Iuan Hshieh , Mike F. Chang
    • H01L29/06 , H01L29/10 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062
    • H01L29/7813 , H01L29/7827 , H01L29/7828 , H01L29/0619 , H01L29/1033 , H01L29/7832
    • A trenched MOSFET in its on-state conducts current through an accumulation region and through an inverted depletion barrier layer located along the trench sidewalls. Blocking is achieved by gate control depletion of the adjacent region and by the depletion barrier layer (having the appearance of "ears" in a cross sectional view and being of opposite doping type to the adjacent region) which extends laterally from the trench sidewalls into the drift region. This MOSFET has superior on-state specific resistance to that of prior art trenched MOSFETs and also has good performance in terms of on state resistance, while having superior blocking characteristics to those of prior art trenched MOSFETs. The improvement in the blocking characteristic is provided by the depletion barrier layer which is a semiconductor doped region. In the blocking state, the depletion barrier layer is fully or almost fully depleted to prevent parasitic bipolar conduction. The shape and extent of the depletion barrier layer may be varied and more than one depletion barrier layer may be present.
    • 其导通状态的沟槽MOSFET导通电流通过积聚区域并且穿过沿着沟槽侧壁设置的反向耗尽势垒层。 通过相邻区域的栅极控制耗尽和从沟槽侧壁横向延伸到其中的耗尽阻挡层（具有在截面图中的“耳朵”并且与相邻区域相反的掺杂类型）的外观来实现阻塞。 漂移区。 该MOSFET具有优于现有技术的沟槽MOSFET的导通电阻率，并且在导通状态电阻方面具有良好的性能，同时具有优于现有技术的沟槽MOSFET的阻塞特性。 阻挡特性的改善由作为半导体掺杂区域的耗尽阻挡层提供。 在阻挡状态下，耗尽阻挡层完全或几乎完全耗尽，以防止寄生双极导电。 可以改变耗尽阻挡层的形状和程度，并且可能存在多于一个的耗尽阻挡层。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 6. 发明授权
      US5592005A Punch-through field effect transistor 失效
    • Punch-through field effect transistor
    • 穿通场效应晶体管
    • US5592005A
    • 1997-01-07
    • US415009
    • 1995-03-31
    • Brian H. Floyd , Fwu-Iuan Hshieh , Mike F. Chang
    • Brian H. Floyd , Fwu-Iuan Hshieh , Mike F. Chang
    • H01L21/336 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/423 , H01L29/772 , H01L29/78
    • H01L29/7722 , H01L29/402 , H01L29/407 , H01L29/42376 , H01L29/7802 , H01L29/7813 , H01L29/7827 , H01L29/0847
    • A trenched field effect transistor suitable especially for low voltage power applications provides low leakage blocking capability due to a gate controlled barrier region between the source region and drain region. Forward conduction occurs through an inversion region between the source region and drain region. Blocking is achieved by a gate controlled depletion barrier. Located between the source and drain regions is a fairly lightly doped body region. The gate electrode, located in a trench, extends through the source and body regions and in some cases into the upper portion of the drain region. The dopant type of the polysilicon gate electrode is the same type as that of the body region. The body region is a relatively thin and lightly doped epitaxial layer grown upon a highly doped low resistivity substrate of opposite conductivity type. In the blocking state the epitaxial body region is depleted due to applied drain-source voltage, hence a punch-through type condition occurs vertically. Lateral gate control increases the effective barrier to the majority carrier flow and reduces leakage current to acceptably low levels.
    • 适合于低电压功率应用的沟槽场效应晶体管由于源极区和漏极区之间的栅极控制势垒区而提供低泄漏阻挡能力。 通过源极区域和漏极区域之间的反转区域发生正向导通。 封闭通过栅极控制的耗尽屏障实现。 位于源极和漏极区之间是相当轻掺杂的体区。 位于沟槽中的栅电极延伸穿过源极和体区，并且在一些情况下延伸到漏极区的上部。 多晶硅栅电极的掺杂剂类型与体区相同。 体区是在相对导电类型的高掺杂低电阻率衬底上生长的相对薄且轻掺杂的外延层。 在阻塞状态下，外延体区域由于施加的漏极 - 源极电压而耗尽，因此穿通型状态垂直发生。 横向栅极控制增加了大多数载流子的有效屏障，并将泄漏电流降低到可接受的低水平。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
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