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1. 发明申请

US20130250562A1 WIRING BOARD DEVICE, LUMINAIRE, AND MANUFACTURING METHOD OF THE WIRING BOARD DEVICE 审中-公开
标题翻译：接线板设备接线板，灯管及其制造方法
公开(公告)号：US20130250562A1
公开(公告)日：2013-09-26
申请号：US13530678
申请日：2012-06-22
申请人： Hirotaka Tanaka , Kiyoshi Nishimura , Miho Watanabe , Nobuhiko Betsuda , Takuya Honma
发明人： Hirotaka Tanaka , Kiyoshi Nishimura , Miho Watanabe , Nobuhiko Betsuda , Takuya Honma
IPC分类号： F21V29/00 , F21L4/02 , H05K3/00 , H05K7/20
CPC分类号： H05K1/0201 , H01L2224/45015 , H01L2224/48091 , H05K1/0306 , H05K1/18 , H05K3/0061 , H05K2201/10106 , H05K2201/10189 , H05K2203/049 , Y10T29/49147 , Y10T29/49149 , H01L2924/00014 , H01L2924/2076
摘要： According to one embodiment, a wiring board device is provided in which even if the temperature of a ceramic board becomes high, the influence on a connector can be reduced and the occurrence of defects due to heat can be prevented. The wiring board device includes a common member. The ceramic board and the connector are placed on the common member. A wiring pattern of the ceramic board and the connector are electrically connected by wiring.
摘要翻译：根据一个实施例，提供了一种布线板装置，其中即使陶瓷板的温度变高，也可以降低对连接器的影响，并且可以防止由于热而引起的缺陷的发生。布线板装置包括公共构件。陶瓷板和连接器放置在公共构件上。陶瓷板和连接器的布线图案通过布线电连接。

2. 发明申请

US20130076230A1 MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE AND THE LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置和发光装置的制造方法
公开(公告)号：US20130076230A1
公开(公告)日：2013-03-28
申请号：US13598233
申请日：2012-08-29
申请人： Miho Watanabe , Nobuhiko Betsuda , Hirotaka Tanaka
发明人： Miho Watanabe , Nobuhiko Betsuda , Hirotaka Tanaka
IPC分类号： H01J9/22 , H05B33/12
CPC分类号： H01L33/501 , H01L24/45 , H01L33/641 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2224/8592 , H01L2924/12041 , H01L2924/12042 , H01L2933/0041 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： According to one embodiment, a manufacturing method for a light-emitting device includes: mounting a light-emitting element on a substrate; and dispersing, in liquid transparent resin, phosphor particles in micron order excited by light radiated from the light-emitting element to emit light and electrostatically applying or electrostatically spraying dispersed liquid of the phosphor particles to thereby form a layer including the phosphor particles on the upper surface of the light-emitting element.
摘要翻译：根据一个实施例，一种发光器件的制造方法包括：将发光元件安装在基板上; 并且在液体透明树脂中分散由发光元件辐射的光激发的微米级荧光体颗粒发光并静电施加或静电喷涂荧光体颗粒的分散液体，从而在上部形成包含荧光体颗粒的层发光元件的表面。

3. 发明授权

US08406669B2 Fixing device, fixing method, and image forming apparatus for fixing a toner image using a first laser unit and a second laser unit 有权
标题翻译：固定装置，固定方法和图像形成装置，用于使用第一激光单元和第二激光单元固定调色剂图像
公开(公告)号：US08406669B2
公开(公告)日：2013-03-26
申请号：US12726935
申请日：2010-03-18
申请人： Naoyuki Egusa , Makoto Furuki , Tetsuro Kodera , Miho Watanabe , Takashi Matsubara
发明人： Naoyuki Egusa , Makoto Furuki , Tetsuro Kodera , Miho Watanabe , Takashi Matsubara
IPC分类号： G03G15/20
CPC分类号： G03G15/201
摘要： According to an aspect of the invention, a fixing device includes a first laser unit and a second laser unit. The first laser unit outputs a first laser beam to irradiate a visible image formed of image forming material on a recording medium with the first laser beam. The second laser unit outputs a second laser beam to irradiate the visible image with the second laser beam after being irradiated with the first laser beam. The first laser beam and the second laser beam is configured to satisfy relations: W1 t2, W1 is an optical output per unit area of the first laser beam, W2 is an optical output per unit area of the second laser beam, t1 is an irradiation time per unit area of the first laser beam, and t2 is an irradiation time per unit area of the second laser beam.
摘要翻译：根据本发明的一个方面，定影装置包括第一激光单元和第二激光单元。第一激光单元输出第一激光束，用第一激光束将由图像形成材料形成的可视图像照射在记录介质上。第二激光单元输出第二激光束，以在用第一激光束照射之后用第二激光束照射可见图像。第一激光束和第二激光束被配置为满足W1 t2的关系，W1是第一激光束的每单位面积的光输出，W2是第二激光束的每单位面积的光输出 t1是第一激光束的每单位面积的照射时间，t2是第二激光束的每单位面积的照射时间。

4. 发明授权

US08306468B2 Laser fixing apparatus and image forming apparatus 有权
标题翻译：激光定影装置和图像形成装置
公开(公告)号：US08306468B2
公开(公告)日：2012-11-06
申请号：US12702709
申请日：2010-02-09
申请人： Takashi Matsubara , Makoto Furuki , Naoyuki Egusa , Tetsuro Kodera , Miho Watanabe , Shinji Hasegawa
发明人： Takashi Matsubara , Makoto Furuki , Naoyuki Egusa , Tetsuro Kodera , Miho Watanabe , Shinji Hasegawa
IPC分类号： G03G15/20
CPC分类号： G03G15/2007
摘要： A laser fixing apparatus includes: a laser light generator that generates laser light to be projected onto a recording medium. A first condenser reflects and condenses the light generated by reflection of the laser light at an irradiation position of the recording medium, such that the reflected and condensed light is re-projected at the irradiation position and/or near the irradiation position.
摘要翻译：激光定影设备包括：激光发生器，其产生要投影到记录介质上的激光。第一电容器在记录介质的照射位置处反射和会聚由激光的反射产生的光，使得反射和聚集的光在照射位置和/或照射位置附近被重新投射。

5. 发明申请

US20120241817A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20120241817A1
公开(公告)日：2012-09-27
申请号：US13424342
申请日：2012-03-19
申请人： WATARU SAITO , SYOTARO ONO , TOSHIYUKI NAKA , SHUNJI TANIUCHI , MIHO WATANABE , HIROAKI YAMASHITA
发明人： WATARU SAITO , SYOTARO ONO , TOSHIYUKI NAKA , SHUNJI TANIUCHI , MIHO WATANABE , HIROAKI YAMASHITA
IPC分类号： H01L29/78
CPC分类号： H01L29/66666 , B82Y10/00 , H01L29/0634 , H01L29/1054 , H01L29/161 , H01L29/165 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/66977 , H01L29/7828
摘要： According to an embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer, a control electrode, a third semiconductor layer, first and second main electrodes. The second semiconductor layer is provided on the first semiconductor layer, and has a higher impurity concentration than the first semiconductor layer. The control electrode is provided inside a first trench with an insulating film interposed, the first trench reaching the first semiconductor layer from a front surface of the second semiconductor layer. The third semiconductor layer is provided inside a second trench and including SixGe1-x or SixGeyC1-x-y, the second trench reaching the first semiconductor layer from the front surface of the second semiconductor layer and being adjacent to the first trench with the second semiconductor layer interposed. The first main electrode is connected to the first semiconductor layer, and the second main electrode is connected to the third semiconductor layer.
摘要翻译：根据实施例，半导体器件包括第一半导体层，第二半导体层，控制电极，第三半导体层，第一和第二主电极。第二半导体层设置在第一半导体层上，并且具有比第一半导体层更高的杂质浓度。控制电极设置在第一沟槽内部，绝缘膜被插入，第一沟槽从第二半导体层的前表面到达第一半导体层。第三半导体层设置在第二沟槽内并且包括SixGe1-x或SixGeyC1-xy，第二沟槽从第二半导体层的前表面到达第一半导体层并且与第一沟槽相邻，第二半导体层插入。第一主电极连接到第一半导体层，第二主电极连接到第三半导体层。

6. 发明申请

US20120217555A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120217555A1
公开(公告)日：2012-08-30
申请号：US13357381
申请日：2012-01-24
申请人： Wataru SAITO , Syotaro Ono , Toshiyuki Naka , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru SAITO , Syotaro Ono , Toshiyuki Naka , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/772
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0634 , H01L29/0865 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/42356 , H01L29/42368 , H01L29/42372 , H01L29/4238 , H01L29/7395
摘要： A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.
摘要翻译：实施例的第一半导体器件包括第一导电类型的第一半导体层，第一控制电极，引出电极，第二控制电极和第三控制电极。第一控制电极通过第一绝缘膜面对第一导电类型的第二半导体层，第二导电类型的第三半导体层和第一导电类型的第四半导体层。第二控制电极和第三控制电极通过第二绝缘膜电连接到引出电极，并且与提取电极下方的第二半导体层相对。第二控制电极和整个第三控制电极的至少一部分设置在引出电极的下方。第二控制电极的电阻高于第三控制电极的电阻。

7. 发明授权

US08232593B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US08232593B2
公开(公告)日：2012-07-31
申请号：US12714002
申请日：2010-02-26
申请人： Wataru Saito , Syotaro Ono , Hiroshi Ohta , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
发明人： Wataru Saito , Syotaro Ono , Hiroshi Ohta , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
IPC分类号： H01L29/78 , H01L29/06
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0649 , H01L29/0653 , H01L29/0661 , H01L29/0692 , H01L29/0696 , H01L29/407 , H01L29/7395 , H01L29/861 , H01L29/8611
摘要： A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first or second conductivity type, a second semiconductor layer of the first conductivity type formed on the first semiconductor layer, a third semiconductor layer of the second conductivity type selectively formed on a surface of the second semiconductor layer, at least one trench formed in a periphery of the third semiconductor layer on the surface of the second semiconductor layer, a depth of a bottom surface of the at least one trench being deeper than a bottom surface of the third semiconductor layer, and shallower than a top surface of the first semiconductor layer, and some or all of the at least one trench being in contact with a side surface of the third semiconductor layer, at least one insulator buried in the at least one trench, a first main electrode electrically connected to the first semiconductor layer, and a second main electrode electrically connected to the third semiconductor layer.
摘要翻译：根据本发明实施例的功率半导体器件包括第一或第二导电类型的第一半导体层，形成在第一半导体层上的第一导电类型的第二半导体层，第二导电类型的第三半导体层选择性地形成在第二半导体层的表面上，形成在第二半导体层的表面上的第三半导体层的周边中的至少一个沟槽，至少一个沟槽的底表面的深度比底部表面，并且比第一半导体层的顶表面浅，并且至少一个沟槽的一些或全部与第三半导体层的侧表面接触，至少一个绝缘体埋在第三半导体层至少一个沟槽，与第一半导体层电连接的第一主电极和电连接的第二主电极引导到第三半导体层。

8. 发明授权

US08159023B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08159023B2
公开(公告)日：2012-04-17
申请号：US12692527
申请日：2010-01-22
申请人： Syotaro Ono , Wataru Saito , Nana Hatano , Hiroshi Ohta , Miho Watanabe
发明人： Syotaro Ono , Wataru Saito , Nana Hatano , Hiroshi Ohta , Miho Watanabe
IPC分类号： H01L29/00
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/1095 , H01L29/66712 , H01L29/7397
摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed separately in the first semiconductor region. A difference between a charge quantity expressed by an integral value of a net activated doping concentration in the second semiconductor regions in the surface direction of the semiconductor substrate and a charge quantity expressed by an integral value of a net activated doping concentration in the first semiconductor region in the surface direction of the semiconductor substrate is always a positive quantity and becomes larger from the depth of the first junction plane to a depth of a second junction plane on an opposite side from the first junction plane.
摘要翻译：半导体器件包括第一导电类型的半导体衬底，半导体衬底上的第一导电类型的第一半导体区域和分开设置在第一半导体区域中的多个第二导电类型的第二半导体区域。由半导体衬底的表面方向上的第二半导体区域中的净活化掺杂浓度的积分值表示的电荷量与由第一半导体区域中的净活化掺杂浓度的积分值表示的电荷量之间的差异在半导体基板的表面方向总是为正量，并且从第一接合面的深度到与第一接合面相反的一侧的第二接合面的深度变得更大。

9. 发明申请

US20120068258A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120068258A1
公开(公告)日：2012-03-22
申请号：US13052908
申请日：2011-03-21
申请人： Syotaro ONO , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Syotaro ONO , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/7811 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/84 , H01L29/0619 , H01L29/402 , H01L29/42372 , H01L29/66712 , H01L2224/37013 , H01L2224/40245 , H01L2224/40479 , H01L2224/40499 , H01L2224/4103 , H01L2224/84203 , H01L2924/00014 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2224/37099
摘要： According to one embodiment, a semiconductor device includes a first main electrode, a control electrode, an extraction electrode, a second insulating film, a plurality of contact electrodes, and a control terminal. The first main electrode is electrically connected to a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type selectively provided on a surface of the first semiconductor region. The control electrode is provided on the first semiconductor region via a first insulating film. The extraction electrode is electrically connected to the control electrode. The second insulating film is provided on the first main electrode and the extraction electrode. The plurality of contact electrodes are provided in an inside of a plurality of first contact holes formed in the second insulating film and are electrically connected to the extraction electrode. The control terminal covers portions of the first main electrode provided on the first semiconductor region, on the second semiconductor region, and on the control electrode, respectively, and the extraction electrode, is electrically connected to the plurality of contact electrodes, and is electrically insulated from the first main electrode by the second insulating film.
摘要翻译：根据一个实施例，半导体器件包括第一主电极，控制电极，引出电极，第二绝缘膜，多个接触电极和控制端子。第一主电极电连接到第一导电类型的第一半导体区域和选择性地设置在第一半导体区域的表面上的第二导电类型的第二半导体区域。控制电极经由第一绝缘膜设置在第一半导体区域上。引出电极与控制电极电连接。第二绝缘膜设置在第一主电极和引出电极上。多个接触电极设置在形成在第二绝缘膜中的多个第一接触孔的内部，并与引出电极电连接。控制端子分别覆盖设置在第一半导体区域上，第二半导体区域上和控制电极上的第一主电极的部分，并且引出电极电连接到多个接触电极，并且是电绝缘的从第一主电极通过第二绝缘膜。

10. 发明授权

US08125023B2 Vertical type power semiconductor device having a super junction structure 有权
标题翻译：具有超结结构的垂直型功率半导体器件
公开(公告)号：US08125023B2
公开(公告)日：2012-02-28
申请号：US12620045
申请日：2009-11-17
申请人： Hiroshi Ohta , Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
发明人： Hiroshi Ohta , Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/7395 , H01L29/7811 , Y10S257/901
摘要： In a vertical power semiconductor device having the super junction structure both in a device section and a terminal section, an n-type impurity layer is formed on the outer peripheral surface in the super junction structure. This allows an electric field on the outer peripheral surface of the super junction structure region to be reduced. Accordingly, a reliable vertical power semiconductor device of a high withstand voltage can be provided.
摘要翻译：在器件部分和端子部分都具有超结结构的垂直功率半导体器件中，在超结结构的外周表面上形成n型杂质层。这允许减小超结结构区域的外周表面上的电场。因此，可以提供高耐受电压的可靠的垂直功率半导体器件。

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