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1. 发明申请

US20130160708A1 Combinatorial High Power Coaxial Switching Matrix 有权
标题翻译：组合大功率同轴开关矩阵
公开(公告)号：US20130160708A1
公开(公告)日：2013-06-27
申请号：US13338102
申请日：2011-12-27
申请人： Brian K. Hatcher , Kent Riley Child
发明人： Brian K. Hatcher , Kent Riley Child
IPC分类号： C23C14/54 , C23C14/34
CPC分类号： H01J37/3464 , G05F5/00 , H01J37/32366 , H01J37/32651 , H01J37/32706 , H01J37/34 , H01J37/3444 , H01J37/3447 , H02J1/10
摘要： A system and method for combinatorial processing of substrates in a processing chamber. The system includes a plurality of generators for supplying power into the processing chamber. A plurality of sputter guns provides power to different regions of a substrate. A switchbox switches power from a generator to a sputter gun via a plurality of coaxial switches. A controller positioned within the switchbox automatically distributes power from a specific generator to a specific sputter gun under programmable logic control.
摘要翻译：一种用于在处理室中组合处理衬底的系统和方法。该系统包括用于向处理室供电的多个发生器。多个溅射枪向基板的不同区域供电。开关盒通过多个同轴开关将发电机的电源切换到溅射枪。位于开关盒内的控制器在可编程逻辑控制下自动将特定发生器的电力分配给特定的溅射枪。

2. 发明申请

US20090142930A1 Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process 失效
标题翻译：通过在等离子体蚀刻工艺中双重HF / VHF源的有效频率进行栅极分布控制
公开(公告)号：US20090142930A1
公开(公告)日：2009-06-04
申请号：US11998829
申请日：2007-11-30
申请人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
发明人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01J37/32091 , H01J37/321 , H01J37/32165 , H01L21/28035
摘要： A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels.
摘要翻译：一种在等离子体中处理晶片的方法，其中通过将同时耦合到晶片的VHF和HF功率的相应功率电平设置为相应的最佳电平，在预定的工艺条件下同时实现两个不同等离子体工艺参数的目标值。

3. 发明申请

US20080236490A1 PLASMA REACTOR WITH AN OVERHEAD INDUCTIVE ANTENNA AND AN OVERHEAD GAS DISTRIBUTION SHOWERHEAD 审中-公开
标题翻译：具有超导电感天线和超高压气体分布的等离子体反应器
公开(公告)号：US20080236490A1
公开(公告)日：2008-10-02
申请号：US11693089
申请日：2007-03-29
申请人： ALEXANDER PATERSON , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond , John P. Holland
发明人： ALEXANDER PATERSON , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond , John P. Holland
IPC分类号： C23C16/00
CPC分类号： H01J37/3244 , H01J37/32091 , H01J37/321
摘要： A plasma reactor for processing a workpiece includes a gas distribution showerhead having a lid, a manifold having a top surface facing the lid and a bottom surface opposing the top surface. Top surface channels in the manifold top surface form a first set of plural paths extending from a first gas input point to plural path ends of the top surface channels. Gas distribution orifices extend axially through the manifold at respective ones of the path ends. Bottom surface channels in the manifold bottom surface form plural paths extending from locations at each of the gas distribution orifices to plural gas distribution path ends. The showerhead further includes a showerhead piece facing the manifold bottom surface and having plural gas injection orifices extending through the showerhead piece.
摘要翻译：用于加工工件的等离子体反应器包括具有盖的气体分配喷头，具有面向盖的顶表面的歧管和与顶表面相对的底表面。歧管顶表面中的顶表面通道形成从第一气体输入点延伸到顶表面通道的多个路径端的多个路径的第一组。气体分配孔在相应的路径端轴向延伸穿过歧管。歧管底表面中的底表面通道形成从每个气体分配孔处的位置延伸到多个气体分配路径端部的多个路径。淋浴头还包括面向歧管底面的喷头片，并具有延伸穿过喷头片的多个气体喷射孔。

4. 发明授权

US07264688B1 Plasma reactor apparatus with independent capacitive and toroidal plasma sources 失效
标题翻译：具有独立电容和环形等离子体源的等离子体反应器装置
公开(公告)号：US07264688B1
公开(公告)日：2007-09-04
申请号：US11411163
申请日：2006-04-24
申请人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
发明人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32935 , H01J37/321
摘要： A plasma reactor includes a toroidal plasma source having an RF power applicator, and RF generator being coupled to the RF power applicator. The reactor further includes a capacitively coupled plasma source power applicator or electrode at the ceiling or the workpiece support, a VHF power generator being coupled to the capacitively coupled source power applicator, a plasma bias power applicator or electrode in the workpiece support and an RF bias power generator coupled to the plasma bias power applicator. A controller adjusts the relative amounts of power simultaneously coupled to plasma in the chamber and conduit by the toroidal plasma source and by the capacitively coupled plasma source power applicator.
摘要翻译：等离子体反应器包括具有RF功率施加器的环形等离子体源，RF发生器耦合到RF功率施加器。反应器还包括在天花板或工件支撑件处的电容耦合的等离子体源功率施加器或电极，耦合到电容耦合的源功率施加器的VHF发电机，工件支架中的等离子体偏置功率施加器或电极，以及RF偏置发电机耦合到等离子体偏置功率施加器。控制器调节通过环形等离子体源和电容耦合的等离子体源功率施加器同时耦合到腔室和管道中的等离子体的功率的相对量。

5. 发明授权

US08066895B2 Method to control uniformity using tri-zone showerhead 失效
标题翻译：使用三区花洒控制均匀性的方法
公开(公告)号：US08066895B2
公开(公告)日：2011-11-29
申请号：US12039350
申请日：2008-02-28
申请人： Rodolfo P. Belen , Edward P. Hammond, IV , Brian K. Hatcher , Dan Katz , Alexander M. Paterson , Valentin N. Todorow
发明人： Rodolfo P. Belen , Edward P. Hammond, IV , Brian K. Hatcher , Dan Katz , Alexander M. Paterson , Valentin N. Todorow
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： C23C16/45565 , C23C16/45574 , H01J37/3244 , H01J37/32449
摘要： Embodiments of the present invention provide apparatus and method for processing a substrate with increased uniformity. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus comprises a chamber body defining a processing volume, a substrate support disposed in the processing volume, a showerhead disposed in the processing volume opposite to the substrate support, and a plasma generation assembly configured to ignite a plasma from the processing gases in the processing gas in the processing volume. The showerhead is configured to provide one or more processing gases to the processing volume. The showerhead has two or more distribution zones each independently controllable.
摘要翻译：本发明的实施例提供了用于以均匀性增加来处理衬底的装置和方法。本发明的一个实施例提供一种用于处理衬底的装置。该装置包括限定处理体积的室主体，设置在处理容积中的基板支撑件，设置在与基板支撑件相对的处理体积中的喷头，以及等离子体产生组件，其被配置为在处理中点燃来自处理气体的等离子体气体处理量。喷头构造成为处理量提供一种或多种处理气体。喷头具有两个或更多个分配区，每个分配区可独立控制。

6. 发明授权

US08017526B2 Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process 失效
标题翻译：通过在等离子体蚀刻工艺中双重HF / VHF源的有效频率进行栅极分布控制
公开(公告)号：US08017526B2
公开(公告)日：2011-09-13
申请号：US11998829
申请日：2007-11-30
申请人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
发明人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
IPC分类号： H01L21/302
CPC分类号： H01L21/32137 , H01J37/32091 , H01J37/321 , H01J37/32165 , H01L21/28035
摘要： A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels.
摘要翻译：一种在等离子体中处理晶片的方法，其中通过将同时耦合到晶片的VHF和HF功率的相应功率电平设置为相应的最佳电平，在预定工艺条件下同时实现两个不同等离子体工艺参数的目标值。

7. 发明授权

US07780864B2 Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution 失效
标题翻译：使用组合电容和电感耦合等离子体源来控制等离子体离子径向分布的过程
公开(公告)号：US07780864B2
公开(公告)日：2010-08-24
申请号：US11410780
申请日：2006-04-24
申请人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
发明人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/321 , H01J37/32174
摘要： A method of processing a workpiece in the chamber of a plasma reactor in which the plasma ion density radial distribution in the process region is controlled by adjusting the ratio between the amounts of the (VHF) capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method can also include applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers.
摘要翻译：一种在等离子体反应器的室中处理工件的方法，其中通过调节（VHF）电容耦合功率和电感耦合功率之间的比例来控制处理区域中的等离子体离子密度径向分布，同时继续保持总等离子体源功率的水平。该方法还可以包括对工件应用独立可调的LF偏置功率和HF偏置功率，并通过调整LF和HF偏置功率之间的比例来调节工件表面处离子能量的平均值和总体分布。

8. 发明授权

US07777152B2 High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck 有权
标题翻译：高AC电流高RF功率AC-RF去耦滤波器用于等离子体反应器加热静电卡盘
公开(公告)号：US07777152B2
公开(公告)日：2010-08-17
申请号：US11671927
申请日：2007-02-06
申请人： Valentin N. Todorov , Michael D. Willwerth , Alexander Paterson , Brian K. Hatcher , James E. Sammons, III , John P. Holland
发明人： Valentin N. Todorov , Michael D. Willwerth , Alexander Paterson , Brian K. Hatcher , James E. Sammons, III , John P. Holland
IPC分类号： B23K9/02 , H01P5/08 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32706 , H03H1/0007
摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.
摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中环形线圈的外径与每个信封的内径大致相同。直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围的相应的电感绕组，每个导体具有一个输入结束和输出结束。每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子的电阻加热元件。

9. 发明申请

US20080193673A1 Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode 审中-公开
标题翻译：使用中室气体分配板，调谐等离子体流动控制栅格和电极处理工件的方法
公开(公告)号：US20080193673A1
公开(公告)日：2008-08-14
申请号：US11998458
申请日：2007-11-28
申请人： Alexander M. Paterson , John P. Holland , Theodoros Panagopoulos , Edward P. Hammond , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
发明人： Alexander M. Paterson , John P. Holland , Theodoros Panagopoulos , Edward P. Hammond , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
IPC分类号： H05H1/34
CPC分类号： H01J37/32422 , H01J37/32091 , H01J37/321 , H01J37/32357 , H01J37/32449
摘要： A method of processing a workpiece in a plasma reactor chamber is disclosed. The method includes providing an in-situ gas distribution plate between the workpiece and a ceiling of the chamber that divides the chamber into upper and lower chamber regions. The method further includes providing in the in-situ plate an array of feed-through openings with different opening sizes to present a non-uniform distribution of gas flow resistance for gas flow from the upper chamber region to the lower chamber region. A first process gas is introduced into the upper chamber region and a plasma is generated a plasma in the upper chamber region. A second process gas is introduced in the lower chamber region through gas injection orifices of the in-situ gas distribution plate.
摘要翻译：公开了一种在等离子体反应器室中处理工件的方法。该方法包括在工件和腔室的天花板之间提供原位气体分配板，该室将室分成上腔室和下室区域。该方法还包括在原位板中提供具有不同开口尺寸的馈通开口阵列，以呈现从上室区域到下腔室区域的气流的气流阻力的不均匀分布。将第一工艺气体引入上室区域，并且在上室区域中产生等离子体。第二工艺气体通过原位气体分配板的气体注入孔引入下腔室区域。

10. 发明授权

US07674394B2 Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution 有权
标题翻译：等离子体处理，用于通过气体分布板电感耦合电力，同时调节等离子体分布
公开(公告)号：US07674394B2
公开(公告)日：2010-03-09
申请号：US11679122
申请日：2007-02-26
申请人： Alexander Paterson , Valentin N. Todorov , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland
发明人： Alexander Paterson , Valentin N. Todorov , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland
IPC分类号： G01L21/30 , H01L21/00 , C23F1/00
CPC分类号： H01J37/32082 , C23C16/505 , H01J37/32091 , H01J37/321 , H01J37/3244
摘要： A method of processing a workpiece in the chamber of a plasma reactor includes capacitively coupling plasma source power using a ceiling gas distribution plate as the electrode while inductively coupling plasma source power through the ceiling gas distribution plate, and flowing process gas through the gas distribution plate from a gas input to plural gas injection orifices, distributing the gas flow within the gas distribution plate through a succession of arcuate paths joined at respective junctions, dividing gas flow at each junction from a first respective one of said gas flow paths into a respective pair of said gas flow paths in opposite gas flow directions, and restricting the arcuate length of each of the arcuate paths to less than half-circles.
摘要翻译：在等离子体反应器的室中处理工件的方法包括使用天花板气体分配板作为电极电容耦合等离子体源功率，同时通过天花板气体分配板感应耦合等离子体源功率，并且使处理气体通过气体分配板从气体输入到多个气体注入孔，通过在各个接合处连接的一系列弧形路径将气流分布在气体分布板内，将每个连接处的气流从第一相应的一个气流通道分成相应的对的所述气体流动路径在相反的气体流动方向上，并且将每个弧形路径的弓形长度限制为小于半圈。

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