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1. 发明授权

US4047214A Electrostatically bonded dielectric-on-semiconductor device, and a method of making the same 失效
标题翻译：绝缘电介质半导体器件及其制造方法
公开(公告)号：US4047214A
公开(公告)日：1977-09-06
申请号：US610364
申请日：1975-09-04
申请人： Maurice H. Francombe , Shu-Yau Wu
发明人： Maurice H. Francombe , Shu-Yau Wu
IPC分类号： H01L29/78 , H01L21/314 , H01L21/70 , H01L27/12 , H01L27/20 , H01L29/786 , H01L29/84 , H03F3/16 , H01L23/48
CPC分类号： H03F3/16 , H01L21/314 , H01L21/70 , H01L29/84 , H01L2924/0002
摘要： An electrostatically bonded dielectric-on semiconductor device, such as a ferroelectric field-effect transistor or amplifying acoustic surface wave transducer, is made with a dielectric body having properties selected from the group consisting of ferroelectricity and piezoelectricity. The dielectric body has opposed first and second major surfaces, with at least said first major surface of planar configuration to which a semiconductor body is electrostatically bonded. The semiconductor body is of a bulk material and a given conductivity type, and has first and second opposed major surfaces, with at least the first major surface of planar configuration where the semiconductor body is electrostatically bonded. At least one and typically a plurality of electrodes are positioned on the dielectric body to provide for interaction between transport carriers in the semiconductor body and electric polarization changes in the dielectric body. Preferably, the dielectric-on-semiconductor is made by the method described.
摘要翻译：使用具有选自铁电性和压电性的性质的电介质体，制造了诸如铁电场效应晶体管或放大声表面波换能器的静电键合电介质半导体器件。电介质体具有相对的第一和第二主表面，至少所述第一主表面是平面构型，半导体本体与该静电结合。半导体主体是体材料和给定的导电类型，并且具有第一和第二相对的主表面，至少具有半导体本体静电键合的平面构造的第一主表面。至少一个并且通常多个电极被定位在电介质体上以提供半导体主体中的输送载体和介电体中的电极化变化之间的相互作用。优选地，通过所描述的方法制造半导体电介质。

2. 发明授权

US3979271A Deposition of solid semiconductor compositions and novel semiconductor materials 失效
标题翻译：固体半导体组合物和新型半导体材料的沉积
公开(公告)号：US3979271A
公开(公告)日：1976-09-07
申请号：US381653
申请日：1973-07-23
申请人： Alexander J. Noreika , Maurice H. Francombe
发明人： Alexander J. Noreika , Maurice H. Francombe
IPC分类号： C30B25/06 , C23C14/00 , C23C14/34 , C30B23/02 , C30B29/40 , H01L21/203 , H01L21/205 , H01L21/208 , H01L21/363 , H01L29/04 , H01L29/161 , H01L29/201 , H01L29/221 , H01L29/26 , B01J17/30
CPC分类号： C30B23/02 , C23C14/0036 , C30B29/40 , C30B29/48 , C30B29/52 , H01L21/02395 , H01L21/02521 , H01L21/02532 , H01L21/02535 , H01L21/02538 , H01L21/02546 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/161 , H01L29/201 , H01L29/221 , H01L29/26 , Y10S148/005 , Y10S148/017 , Y10S148/059 , Y10S148/063 , Y10S148/067 , Y10S148/072 , Y10S148/158 , Y10S148/169 , Y10S420/903
摘要： Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers and most desirably solid solution epitaxial layers of at least two semiconductor materials. The method may be used to make novel metastable compositions such as (GaAs).sub.1.sub.-x Si.sub.x, (GaAs).sub.1.sub.-x Ge.sub.x, (InSb).sub.1.sub.-x Si.sub.x, (InSb).sub.1.sub.-x Ge.sub.x, (InAs).sub.1.sub.-x Si.sub.x and (InAs).sub.1.sub.-x Ge.sub.x (where x is a number greater than about 0.01, and x + (1-x) = 1, and Ga.sub.x As.sub.y Si.sub.z, Ga.sub.x As.sub.y Ge.sub.z, In.sub.x Sb.sub.y Si.sub.z, In.sub.x Sb.sub.y Ge.sub.z, In.sub.x As.sub.y Si.sub.z, In.sub.x As.sub.y Ge.sub.z and In.sub.x Sb.sub.y As.sub.z (where x, y and z are numbers greater than about 0.01, and x + y + z = 1).
摘要翻译：通过溅射靶的同时溅射沉积固体层半导体组合物，并优选通过施加RF电势对反应气体进行放电。优选地，该方法用于制备至少两种半导体材料的固溶层和最希望的固溶体外延层。该方法可用于制备新型亚稳组合物，例如（GaAs）1-xSix，（GaAs）1-xGex，（InSb）1-xSix，（InSb）1-xGex，（InAs）1-xSix和（InAs） 1-xGex（其中x是大于约0.01的数字，x +（1-x）= 1，GaxAsySiz，GaxAsyGez，InxSbySiz，InxSbyGez，InxAsySiz，InxAsyGez和InxSbyAsz（其中x，y和z是大于约0.01，x + y + z = 1）。

3. 发明授权

US4088546A Method of electroplating interconnections 失效
标题翻译：电镀互连方法
公开(公告)号：US4088546A
公开(公告)日：1978-05-09
申请号：US773380
申请日：1977-03-01
申请人： Shu-Yau Wu , Nathan Bluzer , Maurice H. Francombe , Arthur S. Jensen
发明人： Shu-Yau Wu , Nathan Bluzer , Maurice H. Francombe , Arthur S. Jensen
IPC分类号： C25D5/02 , H01L21/768 , H05K3/32 , B01J17/00
CPC分类号： H05K3/32 , C25D5/02 , H01L21/76879
摘要： A method of forming interconnections is described wherein small gaps between contacts are bridged by electroplating metal onto both contacts to form a conductive path therebetween. Many interconnections may be made simultaneously between adjacent contacts by bridging the gap with metal by electroplating.
摘要翻译：描述形成互连的方法，其中触点之间的小间隙通过电镀金属跨接在两个触点上以在它们之间形成导电路径。通过电镀与金属桥接间隙，可以在相邻触点之间同时进行许多互连。

4. 发明授权

US5146299A Ferroelectric thin film material, method of deposition, and devices using same 失效
标题翻译：铁电薄膜材料，沉积方法和使用其的器件
公开(公告)号：US5146299A
公开(公告)日：1992-09-08
申请号：US487056
申请日：1990-03-02
申请人： Donald R. Lampe , Samar Sinharoy , Shu Y. Wu , Harry Buhay , Maurice H. Francombe , S. Visvanathan Krishnaswamy
发明人： Donald R. Lampe , Samar Sinharoy , Shu Y. Wu , Harry Buhay , Maurice H. Francombe , S. Visvanathan Krishnaswamy
IPC分类号： H01L27/115
CPC分类号： H01L27/11502
摘要： A ferroelectric device that comprises a polarizing thin film of BaMF.sub.4 deposited on a substrate. Ba is barium, M is one of the metals of the group consisting of iron (FE), manganese (Mn), cobolt (Co), nickel (Ni), magnesium (Mg), and zinc (Zn). The substrate is silicon, sapphire, or gallium arsenide. A non-volatile NDRO and DRO memory cell and methods for depositing the thin film. A method of depositing bismuth titanate on a substrate are described.
摘要翻译：一种铁电体器件，其包含沉积在衬底上的BaMF 4的偏振薄膜。 Ba是钡，M是由铁（Fe），锰（Mn），钴（Co），镍（Ni），镁（Mg）和锌（Zn）组成的组中的金属之一。衬底是硅，蓝宝石或砷化镓。非挥发性NDRO和DRO存储单元以及用于沉积薄膜的方法。描述了在基底上沉积钛酸铋的方法。

5. 发明授权

US4213781A Deposition of solid semiconductor compositions and novel semiconductor materials 失效
标题翻译：固体半导体组合物和新型半导体材料的沉积
公开(公告)号：US4213781A
公开(公告)日：1980-07-22
申请号：US962344
申请日：1978-11-20
申请人： Alexander J. Noreika , Maurice H. Francombe
发明人： Alexander J. Noreika , Maurice H. Francombe
IPC分类号： C30B23/02 , H01L21/20 , H01L21/203 , H01L29/26 , B44D1/02 , H01L7/36
CPC分类号： H01L29/26 , C30B23/02 , C30B29/10 , C30B29/52 , H01L21/02381 , H01L21/02395 , H01L21/02538 , H01L21/02631 , Y10S148/059 , Y10S148/067 , Y10S148/072 , Y10S420/903 , Y10S438/93
摘要： Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers and most desirably solid solution epitaxial layers of at least two semiconductor materials. The method may be used to make novel metastable compositions such as (GaAs).sub.1-x Si.sub.x, (GaAs).sub.1-x, Ge.sub.x, (InSb).sub.1-x Si.sub.x, (InSb).sub.1-x Ge.sub.x, (InAs).sub.1-x Si.sub.x and (InAs).sub.1-x Ge.sub.x (where x is a number greater than about 0.01, and x+(1-x)=1, and Ga.sub.x As.sub.y Si.sub.z, Ga.sub.x As.sub.y Ge.sub.z, In.sub.x Sb.sub.y Si.sub.z, In.sub.x Sb.sub.y Ge.sub.z, In.sub.x As.sub.y Si.sub.z, In.sub.x As.sub.y Ge.sub.z and In.sub.x Sb.sub.y As.sub.z (where x, y and z are numbers greater than about 0.01, and x+y+z=1).
摘要翻译：通过溅射靶的同时溅射沉积固体层半导体组合物，并优选通过施加RF电势对反应气体进行放电。优选地，该方法用于制备至少两种半导体材料的固溶层和最希望的固溶体外延层。该方法可用于制备新型亚稳组合物，例如（GaAs）1-xSix，（GaAs）1-x，Gex，（InSb）1-x Six，（InSb）1-xGex，（InAs）1-xSix和（InAs）1-x Gex（其中x是大于约0.01的数字，x +（1-x）= 1，GaxAsySiz，GaxAsyGez，InxSbySiz，InxSbyGez，InxAsySiz，InxAsyGez和InxSbyAsz（其中x，y和z是数字大于约0.01，x + y + z = 1）。

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