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1. 发明授权

US5704987A Process for removing residue from a semiconductor wafer after chemical-mechanical polishing 失效
标题翻译：化学机械抛光后从半导体晶片去除残留物的工艺
公开(公告)号：US5704987A
公开(公告)日：1998-01-06
申请号：US588943
申请日：1996-01-19
申请人： Cuc Kim Huynh , Matthew Jeremy Rutten , Susan L. Cohen , Douglas Paul Nadeau , Robert Albin Jurjevic , James Albert Gilhooly
发明人： Cuc Kim Huynh , Matthew Jeremy Rutten , Susan L. Cohen , Douglas Paul Nadeau , Robert Albin Jurjevic , James Albert Gilhooly
IPC分类号： B08B1/04 , B24B37/04 , H01L21/3105 , B08B7/00
CPC分类号： B08B1/04 , B24B37/04 , H01L21/31053
摘要： A method for cleaning the surface of a semiconductor wafer by removing residual slurry particles adhered to the wafer surface after chemical-mechanical polishing is provided. The semiconductor wafer is subjected to a first polishing step using a basic aqueous solution of a nonionic polymeric surfactant comprising alkylphenoxypolyethoxyethanol, preferably nonylphenoxypolyethoxyethanol, at a concentration between about 30 to about 100 ppm and a quaternary ammonium hydroxide such as TMAH at a concentration between about 2.5% and about 6% by weight. A downforce of between about 0 and 2 psi (1.4.times.10.sup.5 dynes/cm.sup.2) is applied for at least 15 seconds. A second polishing step with an applied downforce of at least 4 psi is then employed while applying purified water. The method provides at least a ten fold reduction in the number of submicronic slurry particles remaining on the wafer surface and can be completed within a commercially acceptable amount of time. In addition, particles as small as 0.007 .mu.m can be removed. The method also provides a level of accuracy in the predictability of the number of residual particles remaining on the wafer surface.
摘要翻译：提供了通过在化学机械抛光后除去附着在晶片表面上的残留浆料颗粒来清洁半导体晶片的表面的方法。使用浓度为约30至约100ppm的浓度为约30至约100ppm的烷基苯氧基聚乙氧基乙醇，优选壬基苯氧基聚乙氧基乙醇的非离子聚合物表面活性剂碱性水溶液和浓度为约2.5的TMAH等季铵氢氧化物，对半导体晶片进行第一抛光步骤％和约6重量％。施加约0和2psi（1.4×10 5达因/ cm 2）之间的下压力至少15秒。然后在施加净化水的同时使用具有至少4psi的施加的下压力的第二抛光步骤。该方法提供了在晶片表面上残留的亚微米浆料颗粒数量的至少十倍的减少，并且可以在商业上可接受的时间内完成。此外，可以除去小至0.007μm的颗粒。该方法还提供了在晶片表面上残留的残留颗粒的数量的可预测性的精度水平。

2. 发明授权

US5722879A Variable travel carrier device and method for planarizing semiconductor wafers 失效
公开(公告)号：US5722879A
公开(公告)日：1998-03-03
申请号：US671034
申请日：1996-06-27
申请人： John Edward Cronin , Matthew Jeremy Rutten
发明人： John Edward Cronin , Matthew Jeremy Rutten
IPC分类号： B24B37/10 , H01L21/304 , B24B7/00 , B24B9/00 , B24B17/00
CPC分类号： B24B37/105
摘要： A chemical mechanical planarization tool and method are presented employing a non-linear motion of the carrier arm relative to the polishing pad. The non-linear motion of the carrier arm relative to the polishing pad can be accomplished in a variety of ways, for example, employing a mechanical template having an irregular opening or programming the carrier displacement mechanism to move the carrier in an irregular, non-rotational X-Y path over the polishing pad.

3. 发明授权

US5676587A Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride 失效
标题翻译：钛，氮化钛，钽和氮化钽的选择性抛光工艺
公开(公告)号：US5676587A
公开(公告)日：1997-10-14
申请号：US568162
申请日：1995-12-06
申请人： William Francis Landers , Matthew Jeremy Rutten , Thomas Robert Fisher, Jr. , Dean Allen Schaffer
发明人： William Francis Landers , Matthew Jeremy Rutten , Thomas Robert Fisher, Jr. , Dean Allen Schaffer
IPC分类号： H01L21/321 , H01L21/768 , B24B1/00
CPC分类号： H01L21/7684 , H01L21/3212
摘要： An improved Chemical Mechanical Planarization (CMP) method is provided for selectively removing a layer of metallization material such as tungsten or copper and a liner film such as Ti/Tin or Ta/TaN from the surface of an oxide layer of a semiconductor wafer. The method includes removing the metallization and liner layers with a first removal process which utilizes CMP polishing and an alumina-based slurry. The first removal process is stopped after the metallization layer is completely removed and before the liner film is completely removed. The remainder of the liner film is removed using a second removal process which includes CMP polishing using a neutral pH silica-based slurry which is selective to the liner film.
摘要翻译：提供了一种改进的化学机械平面化（CMP）方法，用于从半导体晶片的氧化物层的表面选择性地去除诸如钨或铜的金属化材料层和诸如Ti / Tin或Ta / TaN的衬里膜。该方法包括使用CMP抛光和氧化铝基浆料的第一去除方法去除金属化层和衬层。在金属化层完全去除之后并且在衬里膜完全去除之前，首先去除工艺停止。使用第二去除方法除去衬里膜的其余部分，其包括使用对衬垫膜有选择性的中性pH二氧化硅基浆料进行CMP抛光。

4. 发明授权

US5876266A Polishing pad with controlled release of desired micro-encapsulated polishing agents 失效
标题翻译：抛光垫，可控制所需的微胶囊化抛光剂
公开(公告)号：US5876266A
公开(公告)日：1999-03-02
申请号：US892777
申请日：1997-07-15
申请人： Matthew Kilpatrick Miller , Clifford Owen Morgan , Matthew Jeremy Rutten , Erick G. Walton , Terrance Monte Wright
发明人： Matthew Kilpatrick Miller , Clifford Owen Morgan , Matthew Jeremy Rutten , Erick G. Walton , Terrance Monte Wright
IPC分类号： B24B37/24 , B24D3/34 , B24D13/12 , B24D13/14 , H01L21/304 , B24B1/00
CPC分类号： B24B37/24 , B24D3/34
摘要： A desired reagent is delivered to a workpiece undergoing a chemical mechanical polishing process with a chemical mechanical planarization apparatus. A slurry and polishing pad are provided for the polishing process. Reagent containing microcapsules are also provided, the microcapsules encapsulating a desired reagent. The workpiece is polished with a combination of the slurry, the polishing pad, and the microcapsules, wherein the encapsulated reagents are controllably released during the polishing step via manipulation of a polishing parameter. In one embodiment, the microcapsules are included in the slurry. In an alternate embodiment, the microcapsules are embedded within the polishing pad.
摘要翻译：将期望的试剂通过化学机械平面化装置输送到进行化学机械抛光工艺的工件。提供了用于抛光工艺的浆料和抛光垫。还提供了含有微胶囊的试剂，所述微胶囊包封所需试剂。用浆料，抛光垫和微胶囊的组合对工件进行抛光，其中通过抛光参数的操作在抛光步骤期间可密封地释放封装的试剂。在一个实施方案中，微胶囊包含在浆料中。在替代实施例中，微胶囊嵌入抛光垫内。

5. 发明授权

US5928062A Vertical polishing device and method 失效
标题翻译：立式抛光装置及方法
公开(公告)号：US5928062A
公开(公告)日：1999-07-27
申请号：US846979
申请日：1997-04-30
申请人： Matthew Kilpatrick Miller , Matthew Jeremy Rutten , Terrance Monte Wright
发明人： Matthew Kilpatrick Miller , Matthew Jeremy Rutten , Terrance Monte Wright
IPC分类号： B24B37/10 , H01L21/304 , B24B1/00
CPC分类号： B24B37/107
摘要： The present invention relates to a chemical mechanical polishing (CMP) machine and method in which at least one polishing device is provided with a vertically-oriented polishing surface and a slurry delivery mechanism. As a result, the footprint of the machine is greatly reduced and the prevention of contaminants embedding in the polishing device can be promoted.
摘要翻译：本发明涉及一种化学机械抛光（CMP）机器和方法，其中至少一个抛光装置设置有垂直取向的抛光表面和浆料输送机构。结果，机器的占地面积大大降低，并且可以促进防止污染物包埋在抛光装置中。

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