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1. 发明授权

US5704987A Process for removing residue from a semiconductor wafer after chemical-mechanical polishing 失效
标题翻译：化学机械抛光后从半导体晶片去除残留物的工艺
公开(公告)号：US5704987A
公开(公告)日：1998-01-06
申请号：US588943
申请日：1996-01-19
申请人： Cuc Kim Huynh , Matthew Jeremy Rutten , Susan L. Cohen , Douglas Paul Nadeau , Robert Albin Jurjevic , James Albert Gilhooly
发明人： Cuc Kim Huynh , Matthew Jeremy Rutten , Susan L. Cohen , Douglas Paul Nadeau , Robert Albin Jurjevic , James Albert Gilhooly
IPC分类号： B08B1/04 , B24B37/04 , H01L21/3105 , B08B7/00
CPC分类号： B08B1/04 , B24B37/04 , H01L21/31053
摘要： A method for cleaning the surface of a semiconductor wafer by removing residual slurry particles adhered to the wafer surface after chemical-mechanical polishing is provided. The semiconductor wafer is subjected to a first polishing step using a basic aqueous solution of a nonionic polymeric surfactant comprising alkylphenoxypolyethoxyethanol, preferably nonylphenoxypolyethoxyethanol, at a concentration between about 30 to about 100 ppm and a quaternary ammonium hydroxide such as TMAH at a concentration between about 2.5% and about 6% by weight. A downforce of between about 0 and 2 psi (1.4.times.10.sup.5 dynes/cm.sup.2) is applied for at least 15 seconds. A second polishing step with an applied downforce of at least 4 psi is then employed while applying purified water. The method provides at least a ten fold reduction in the number of submicronic slurry particles remaining on the wafer surface and can be completed within a commercially acceptable amount of time. In addition, particles as small as 0.007 .mu.m can be removed. The method also provides a level of accuracy in the predictability of the number of residual particles remaining on the wafer surface.
摘要翻译：提供了通过在化学机械抛光后除去附着在晶片表面上的残留浆料颗粒来清洁半导体晶片的表面的方法。使用浓度为约30至约100ppm的浓度为约30至约100ppm的烷基苯氧基聚乙氧基乙醇，优选壬基苯氧基聚乙氧基乙醇的非离子聚合物表面活性剂碱性水溶液和浓度为约2.5的TMAH等季铵氢氧化物，对半导体晶片进行第一抛光步骤％和约6重量％。施加约0和2psi（1.4×10 5达因/ cm 2）之间的下压力至少15秒。然后在施加净化水的同时使用具有至少4psi的施加的下压力的第二抛光步骤。该方法提供了在晶片表面上残留的亚微米浆料颗粒数量的至少十倍的减少，并且可以在商业上可接受的时间内完成。此外，可以除去小至0.007μm的颗粒。该方法还提供了在晶片表面上残留的残留颗粒的数量的可预测性的精度水平。

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