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1. 发明授权

US06258690B1 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06258690B1
公开(公告)日：2001-07-10
申请号：US08826224
申请日：1997-03-27
申请人： Masanobu Zenke
发明人： Masanobu Zenke
IPC分类号： H01L2120
CPC分类号： H01L28/40 , H01L21/3185 , H01L27/1085 , Y10S438/908
摘要： In a method of manufacturing a semiconductor device having a capacitor portion consisting of a lower electrode, a dielectric film, and an upper electrode on a semiconductor substrate, a silicon film is formed on a surface of the lower electrode and a surface of an insulating film adjacent to the lower electrode. Annealing is preformed in an atmosphere containing nitrogen or ammonia to nitride the silicon film. A silicon nitride film is formed by LP-CVD.
摘要翻译：在制造半导体器件的方法中，在半导体衬底上具有由下电极，电介质膜和上电极组成的电容器部分，在下电极的表面和绝缘膜的表面上形成硅膜邻近下电极。在含有氮或氨的气氛中进行退火以氮化硅膜。通过LP-CVD形成氮化硅膜。

2. 发明授权

US5851581A Semiconductor device fabrication method for preventing tungsten from removing 失效
标题翻译：防止钨去除的半导体器件制造方法
公开(公告)号：US5851581A
公开(公告)日：1998-12-22
申请号：US899722
申请日：1997-07-24
申请人： Masanobu Zenke
发明人： Masanobu Zenke
IPC分类号： H01L21/285 , C23C16/14 , C23C16/54 , H01L21/28 , H01L21/768 , H01L29/40 , B05D5/12
CPC分类号： C23C16/14 , C23C16/54 , H01L21/76843 , H01L21/76876 , H01L21/76877 , Y10S438/913
摘要： A contact is formed in an insulating film covering on a silicon substrate and thereafter an amorphous silicon film is deposited thereon at 400.degree. to 500.degree. C. by using disilane. A tungsten film is then formed and etched back to form a tungsten plug through etch-back.
摘要翻译：在覆盖在硅衬底上的绝缘膜上形成接触，然后通过使用乙硅烷在400℃至500℃下沉积非晶硅膜。然后形成钨膜并回蚀刻以通过蚀刻回形成钨塞。

3. 发明授权

US5811333A Method of roughening a polysilicon layer of a random crystal structure included in a semiconductor device 失效
标题翻译：包括在半导体器件中的随机晶体结构的多晶硅层粗糙化的方法
公开(公告)号：US5811333A
公开(公告)日：1998-09-22
申请号：US585717
申请日：1996-01-11
申请人： Masanobu Zenke
发明人： Masanobu Zenke
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/108
CPC分类号： H01L28/84 , Y10S438/964
摘要： On a semiconductor substrate (1), a polysilicon layer (3) of a random crystal structure is formed. The polysilicon layer (3) is treated by an etchant to provide a roughened surface (3a) of the polysilicon layer (3). The roughened surface (3a) is formed along grains of a random crystal structure and extends over all of top and side surfaces of the polysilicon layer (3). Thus, the polysilicon layer (3) serves as a lower electrode (4) having an increased surface area. A capacitor insulator layer (5) is deposited on the lower electrode (4). An upper electrode (6) is deposited on the capacitor insulator layer (5).
摘要翻译：在半导体衬底（1）上形成随机晶体结构的多晶硅层（3）。通过蚀刻剂处理多晶硅层（3）以提供多晶硅层（3）的粗糙化表面（3a）。粗糙表面（3a）沿着随机晶体结构的晶粒形成并且在多晶硅层（3）的所有顶表面和侧表面上延伸。因此，多晶硅层（3）用作具有增加的表面积的下电极（4）。电容器绝缘体层（5）沉积在下电极（4）上。上电极（6）沉积在电容器绝缘体层（5）上。

4. 发明授权

US5441594A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5441594A
公开(公告)日：1995-08-15
申请号：US22722
申请日：1993-02-24
申请人： Masanobu Zenke
发明人： Masanobu Zenke
IPC分类号： H01L21/3213 , H01L21/285 , H01L21/311 , H01L21/768 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： H01L21/02063 , H01L21/28525 , H01L21/31116 , Y10S438/908 , Y10S438/913
摘要： A contact hole reaching a diffusion layer 2 provided on the surface of a silicon substrate 1 is formed by etching an insulating film 3. At this time, a surface layer 2a formed on the surface of the diffusion layer 2 is removed within a film forming unit by utilizing chlorine trifluoride gas. Next, a polycrystalline silicon film 4 is formed within tile same film forming equipment. Thus, the surface of an electrically conductive layer (including a semiconductor layer) covered with the insulating film is selectively exposed by the etching process and, prior to the formation of the film (including oxidized layer), connected to the exposed surface of the electrically conductive layer, the surface layer formed on the surface of the electrically conductive layer, which includes a naturally oxidized film, damage, contaminated substances or the like, can be completely removed.
摘要翻译：通过蚀刻绝缘膜3形成到硅衬底1的表面上的到达扩散层2的接触孔。此时，形成在扩散层2的表面上的表面层2a在成膜单元通过利用三氟化氯气体。接下来，在瓦片相同的成膜设备内形成多晶硅膜4。因此，通过蚀刻工艺选择性地暴露由绝缘膜覆盖的导电层（包括半导体层）的表面，并且在形成膜（包括氧化层）之前，连接到电气的暴露表面导电层，可以完全除去形成在导电层的表面上的表面层，其包括天然氧化膜，损伤，污染物质等。

5. 发明授权

US5187557A Semiconductor capacitor with a metal nitride film and metal oxide dielectric 失效
标题翻译：具有金属氮化物膜和金属氧化物电介质的半导体电容器
公开(公告)号：US5187557A
公开(公告)日：1993-02-16
申请号：US613070
申请日：1990-11-15
申请人： Masanobu Zenke
发明人： Masanobu Zenke
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： H01L28/60
摘要： A semiconductor device having a capacitor part which is composed of the first electrode including a first titanium nitride film, a dielectric layer and a second electrode including a second titanium nitride film, the titanium nitride film being sandwiched between the dielectric layer and the first and second electrodes, whereby it is possible to obtain a capacitor having a high capacitance value and which can inhibit the reaction between the dielectric layer and the electrode and which does not result in an increase in a leakage current of the dielectric layer and a deterioration of isolation voltage.
摘要翻译：一种具有电容器部分的半导体器件，其由包括第一氮化钛膜，电介质层的第一电极和包括第二氮化钛膜的第二电极组成，所述氮化钛膜夹在所述电介质层和所述第一和第二电极之间电极，由此可以获得具有高电容值并且可以抑制电介质层和电极之间的反应的电容器，并且不会导致电介质层的漏电流的增加和隔离电压的劣化。

6. 发明授权

US6146966A Process for forming a capacitor incorporated in a semiconductor device 失效
标题翻译：用于形成结合在半导体器件中的电容器的工艺
公开(公告)号：US6146966A
公开(公告)日：2000-11-14
申请号：US859210
申请日：1997-05-20
申请人： Toshiyuki Hirota , Hirohito Watanabe , Fumiki Aiso , Shuji Fujiwara , Masanobu Zenke
发明人： Toshiyuki Hirota , Hirohito Watanabe , Fumiki Aiso , Shuji Fujiwara , Masanobu Zenke
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/108
CPC分类号： H01L28/84 , H01L27/10852
摘要： In a process of forming hemi-spherical silicon grains on an amorphous silicon film in accordance with the "crystal nucleation" process, in order to form crystal nuclei on a top surface and a side surface of the amorphous silicon film, SiH.sub.4 is irradiated onto the top and side surfaces of the amorphous silicon film at a stabilized temperature which is lower than, by at least 5.degree. C., an annealing temperature for growing the hemi-spherical silicon grains from the crystal nuclei, with the result that it is possible to suppress or retard the growth of the crystals growing into the amorphous silicon film from a boundary between the amorphous silicon film and an interlayer insulator film. Thereafter, the amorphous silicon film having the crystal nuclei thus formed on the surface thereof is annealed at the annealing temperature so that the hemi-spherical silicon grains are formed on the whole surface of the top and side surfaces of the amorphous silicon film.
摘要翻译：在根据“晶体成核”法在非晶硅膜上形成半球形硅晶粒的过程中，为了在非晶硅膜的顶表面和侧表面上形成晶核，将SiH 4照射到该非晶硅膜的顶表面和侧表面在稳定的温度下低于至少5℃的用于从晶核生长半球形硅晶粒的退火温度，结果是可以从非晶硅膜和层间绝缘膜之间的边界抑制或延缓从非晶硅膜生长的晶体的生长。此后，在其表面上形成具有晶核的非晶硅膜在退火温度下退火，使得半球形硅晶粒形成在非晶硅膜的顶表面和侧表面的整个表面上。

7. 发明授权

US5956595A Method of fabricating a semiconductor integrated circuit having a capacitor with lower electrode comprising titanium nitride 失效
标题翻译：制造具有包括氮化钛的下部电极的电容器的半导体集成电路的方法
公开(公告)号：US5956595A
公开(公告)日：1999-09-21
申请号：US892999
申请日：1997-07-15
申请人： Masanobu Zenke
发明人： Masanobu Zenke
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10852
摘要： In order to fabricate a semiconductor device having a stacked capacitor cell, a silicon substrate is first prepared. A lower capacitor electrode having a porous surface is then formed on the silicon substrate. Following this, the lower capacitor electrode is selectively covered with a titanium nitride film. Further, a dielectric film of a material, exhibiting high permittivity or feroelectricity, is deposited on said titanium nitride film, and an upper capacitor electrode is deposited on the dielectric film.
摘要翻译：为了制造具有层叠电容器单元的半导体器件，首先准备硅衬底。然后在硅衬底上形成具有多孔表面的下电容器电极。接下来，下电极电极被氮化钛膜选择性地覆盖。此外，在所述氮化钛膜上沉积显示高介电常数或feroelectricity的材料的电介质膜，并且在电介质膜上沉积上电容器电极。

8. 发明授权

US5700738A Method for producing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5700738A
公开(公告)日：1997-12-23
申请号：US625825
申请日：1996-04-01
申请人： Masanobu Zenke
发明人： Masanobu Zenke
IPC分类号： C23C16/04 , C23C16/44 , H01L21/205 , H01L21/285 , H01L21/31 , H01L21/3205
CPC分类号： H01L21/32051
摘要： In a method and an apparatus for producing a semiconductor device, means is provided for adding an oxidizing gas to an inactive gas to be fed to the sides of a wafer. Before a metal film is formed on the front of the wafer, the oxidizing gas oxidizes silicon exposed on the sides and rear of the wafer and unprotected from a raw material gas, thereby forming a silicon oxide film. Hence, even when the metal film is formed on the front of the wafer via an adhesion layer, it is scarcely formed on the sides and rear of the wafer and turns out a minimum of particles. This prevents the metal film from easily coming off without resorting to a great amount of inactive gas.
摘要翻译：在制造半导体器件的方法和装置中，提供了用于将氧化气体添加到待供给到晶片侧面的惰性气体的装置。在金属膜形成在晶片前面之前，氧化气体氧化暴露在晶片的侧面和后面的硅，并且不受原料气体的保护，从而形成氧化硅膜。因此，即使当通过粘合层在晶片的前面形成金属膜时，其几乎不形成在晶片的侧面和后面，并且产生最小的颗粒。这防止金属膜容易地脱落而不需要大量的非活性气体。

9. 发明授权

US5700710A Process of fabricating capacitor having waved rough surface of accumulating electrode 失效
标题翻译：制造电容器的工艺，其具有挥动的积聚电极的粗糙表面
公开(公告)号：US5700710A
公开(公告)日：1997-12-23
申请号：US553981
申请日：1995-11-06
申请人： Masanobu Zenke
发明人： Masanobu Zenke
IPC分类号： H01L21/28 , H01L21/02 , H01L21/265 , H01L21/306 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L21/70
CPC分类号： H01L28/84 , Y10S438/964
摘要： Crystal grains of a lower polysilicon layer is grown through an annealing or an ion-implantation before separation of the lower polysilicon layer into doped silicon pieces, an upper polysilicon layer with small crystal grains is deposited over the doped silicon pieces so as to wave at long intervals, and the upper polysilicon layer is roughened so as to wave at short intervals, thereby increasing the surface area of an accumulating electrode of a capacitor.
摘要翻译：在将下多晶硅层分离成掺杂硅片之前，通过退火或离子注入生长下多晶硅层的晶粒，在掺杂的硅片上沉积具有小晶粒的上多晶硅层，以便长时间波动间隔，并且上多晶硅层被粗糙化以便以短的间隔波动，从而增加电容器的积聚电极的表面积。

10. 发明授权

US5372962A Method of making a semiconductor integrated circuit device having a capacitor with a porous surface of an electrode 失效
标题翻译：制造具有电极多孔表面的电容器的半导体集成电路器件的方法
公开(公告)号：US5372962A
公开(公告)日：1994-12-13
申请号：US11855
申请日：1993-02-01
申请人： Toshiyuki Hirota , Ichirou Honma , Hirohito Watanabe , Masanobu Zenke
发明人： Toshiyuki Hirota , Ichirou Honma , Hirohito Watanabe , Masanobu Zenke
IPC分类号： H01L21/8242 , H01L27/108 , H01L21/70
CPC分类号： H01L27/10852 , H01L27/10808 , Y10S148/138 , Y10S438/964
摘要： A capacitor incorporated in a semiconductor integrated circuit device is expected to have a large amount of capacitance without increase of the occupation area, and has a lower electrode increased in surface area by using a roughening technique selected from the group consisting of an anodizing technique, an anodic oxidation, a wet etching and a dry etching so that a surface of the lower electrode becomes porous, thereby increasing the capacitance.
摘要翻译：期望并入半导体集成电路器件中的电容器具有大量的电容而不增加占用面积，并且通过使用选自以下的粗糙化技术，具有增加表面积的下电极，所述粗糙化技术包括阳极氧化技术，阳极氧化，湿蚀刻和干蚀刻，使得下电极的表面变多孔，从而增加电容。

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