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1. 发明授权

US08157952B2 Plasma processing chamber, potential controlling apparatus, potential controlling method, program for implementing the method, and storage medium storing the program 有权
标题翻译：等离子体处理室，电位控制装置，电位控制方法，实现该方法的程序和存储程序的存储介质
公开(公告)号：US08157952B2
公开(公告)日：2012-04-17
申请号：US11442287
申请日：2006-05-30
申请人： Masanobu Honda , Toshihiro Hayami
发明人： Masanobu Honda , Toshihiro Hayami
IPC分类号： H01J7/24
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber that enables an amount of attached polymer to be controlled easily with a simple construction. A vessel 11 houses a semiconductor wafer W. A susceptor 12 is disposed in the vessel 11 and is connected to a lower electrode radio frequency power source 20. In a plasma processing chamber 10, RIE and ashing can be carried out on the semiconductor wafer W using plasma produced from processing gases introduced into the vessel 11. A side wall member 45 is disposed in the vessel 11 and exposed to the plasma. A potential of the side wall member 45 is set to either a floating potential or a ground potential in accordance with which of RIE and ashing is carried out.
摘要翻译：一种等离子体处理室，其能够以简单的结构容易地控制附着的聚合物的量。容器11容纳半导体晶片W.基座12设置在容器11中并连接到下电极射频电源20.在等离子体处理室10中，可以在半导体晶片W上执行RIE和灰化使用从加入到容器11中的加工气体产生的等离子体。侧壁构件45设置在容器11中并暴露于等离子体。根据执行RIE和灰化的方式将侧壁构件45的电位设置为浮动电位或接地电位。

2. 发明授权

US07895970B2 Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component 有权
标题翻译：等离子体处理室，等离子体处理室，等离子体处理装置和等离子体处理室组件的结构
公开(公告)号：US07895970B2
公开(公告)日：2011-03-01
申请号：US11529372
申请日：2006-09-29
申请人： Masanobu Honda , Toshihiro Hayami , Yutaka Matsui
发明人： Masanobu Honda , Toshihiro Hayami , Yutaka Matsui
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32431 , F02M27/042 , H01J37/32568
摘要： A structure for a plasma processing chamber which makes it possible to control the potential therein and simplify the construction of the plasma processing chamber. A gas-introducing showerhead 34 is disposed in the plasma processing chamber 10 including a container 11 having a process space S for receiving a semiconductor wafer W, and a susceptor 12 disposed in the container 11, for mounting the received semiconductor wafer W thereon. The susceptor 12 is connected to high-frequency power supplies 20 and 46. An electrode support 39 of the gas-introducing showerhead 34 is electrically grounded. An electrically floating top electrode plate 38 of the gas-introducing showerhead 34 is disposed between the electrode support 39 and the process space S. The top electrode plate 38 has a surface exposed to the process space S. An insulating film 48 is formed of a dielectric material and disposed between the electrode support 39 and the top electrode plate 38.
摘要翻译：一种用于等离子体处理室的结构，其可以控制其中的电位并简化等离子体处理室的结构。气体导入花洒34设置在等离子体处理室10中，包括具有用于接收半导体晶片W的处理空间S的容器11和设置在容器11中的用于将接收的半导体晶片W安装在其上的基座12。基座12连接到高频电源20和46.气体导入花洒34的电极支架39电接地。气体导入喷头34的电浮置顶部电极板38设置在电极支撑件39和处理空间S之间。顶部电极板38具有暴露于处理空间S的表面。绝缘膜48由电介质材料并且设置在电极支撑件39和顶部电极板38之间。

3. 发明申请

US20060273733A1 Plasma processing chamber, potential controlling apparatus, potential controlling method, program for implementing the method, and storage medium storing the program 有权
标题翻译：等离子体处理室，电位控制装置，电位控制方法，实现该方法的程序和存储程序的存储介质
公开(公告)号：US20060273733A1
公开(公告)日：2006-12-07
申请号：US11442287
申请日：2006-05-30
申请人： Masanobu Honda , Toshihiro Hayami
发明人： Masanobu Honda , Toshihiro Hayami
IPC分类号： H01J7/24
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber that enables an amount of attached polymer to be controlled easily with a simple construction. A vessel 11 houses a semiconductor wafer W. A susceptor 12 is disposed in the vessel 11 and is connected to a lower electrode radio frequency power source 20. In a plasma processing chamber 10, RIE and ashing can be carried out on the semiconductor wafer W using plasma produced from processing gases introduced into the vessel 11. A side wall member 45 is disposed in the vessel 11 and exposed to the plasma. A potential of the side wall member 45 is set to either a floating potential or a ground potential in accordance with which of RIE and ashing is carried out.
摘要翻译：一种等离子体处理室，其能够以简单的结构容易地控制附着的聚合物的量。容器11容纳半导体晶片W.基座12设置在容器11中并连接到下电极射频电源20。在等离子体处理室10中，可以使用从引入到容器11中的处理气体产生的等离子体在半导体晶片W上进行RIE和灰化。侧壁构件45设置在容器11中并暴露于等离子体。根据执行RIE和灰化的方式将侧壁构件45的电位设置为浮动电位或接地电位。

4. 发明申请

US20070068798A1 Structure for plasma processing chamber, plasma processing chamber, plasma processing apparatus, and plasma processing chamber component 有权
标题翻译：等离子体处理室，等离子体处理室，等离子体处理装置和等离子体处理室组件的结构
公开(公告)号：US20070068798A1
公开(公告)日：2007-03-29
申请号：US11529372
申请日：2006-09-29
申请人： Masanobu Honda , Toshihiro Hayami , Yutaka Matsui
发明人： Masanobu Honda , Toshihiro Hayami , Yutaka Matsui
IPC分类号： C25D17/00 , F02M37/22
CPC分类号： H01J37/32431 , F02M27/042 , H01J37/32568
摘要： A structure for a plasma processing chamber which makes it possible to control the potential therein and simplify the construction of the plasma processing chamber. A gas-introducing showerhead 34 is disposed in the plasma processing chamber 10 including a container 11 having a process space S for receiving a semiconductor wafer W, and a susceptor 12 disposed in the container 11, for mounting the received semiconductor wafer W thereon. The susceptor 12 is connected to high-frequency power supplies 20 and 46. An electrode support 39 of the gas-introducing showerhead 34 is electrically grounded. An electrically floating top electrode plate 38 of the gas-introducing showerhead 34 is disposed between the electrode support 39 and the process space S. The top electrode plate 38 has a surface exposed to the process space S. An insulating film 48 is formed of a dielectric material and disposed between the electrode support 39 and the top electrode plate 38.
摘要翻译：一种用于等离子体处理室的结构，其可以控制其中的电位并简化等离子体处理室的结构。气体导入花洒34设置在等离子体处理室10中，包括具有用于接收半导体晶片W的处理空间S的容器11和设置在容器11中的用于将接收的半导体晶片W安装在其上的基座12。基座12连接到高频电源20和46.气体导入花洒34的电极支架39电接地。气体导入喷头34的电浮置顶部电极板38设置在电极支撑件39和处理空间S之间。顶部电极板38具有暴露于处理空间S的表面。绝缘膜48由电介质材料并且设置在电极支撑件39和顶部电极板38之间。

5. 发明授权

US08852388B2 Plasma processor 有权
标题翻译：等离子处理器
公开(公告)号：US08852388B2
公开(公告)日：2014-10-07
申请号：US12593526
申请日：2008-02-26
申请人： Toshihiro Hayami
发明人： Toshihiro Hayami
IPC分类号： H01J37/32 , H01L21/3065 , C23C16/44
CPC分类号： H01J37/32935 , C23C16/4411 , H01J37/32082 , H01J37/32522 , H01J37/32623 , H01L21/3065 , H01L21/30655
摘要： The present invention relates to a plasma processor capable of regulating the temperature of the inner surface of the processing chamber efficiently and with excellent response, with a low-cost configuration. A plasma processor 1 includes a processing chamber 11, a processing gas supply device 20, an exhaust device 40, coils 23, a high-frequency power supply unit 24, a heater 26, a cooling device 30, and a control device 50. The cooling device 30 is configured with a cooling member 32 facing the processing chamber 11 at a distance therefrom, a cooling fluid supply section 31 for supplying cooling fluid into a cooling passage 32a of the cooling member 32 and circulates it, and annular seal members 35 and 36 provided between the cooling member 32 and the processing chamber 11. The exhaust device 40 reduces the pressure in a space S surrounded by the seal members 35 and 36, the cooling member 32, and the processing chamber 11. The control device 50 controls the exhaust device 40 to reduce the pressure in the space S when high-frequency power is not applied to the coils 23, and to set the pressure in the space S at atmospheric pressure when high-frequency power is applied to the coils 23.
摘要翻译：本发明涉及一种等离子体处理器，其能够以低成本的结构有效地且以良好的响应来调节处理室的内表面的温度。等离子体处理器1包括处理室11，处理气体供应装置20，排气装置40，线圈23，高频电源单元24，加热器26，冷却装置30和控制装置50。冷却装置30配置有与处理室11相距一定距离的冷却部件32，冷却流体供给部31，用于将冷却流体供给到冷却部件32的冷却通路32a并使其循环，并且环状密封部件35和 36设置在冷却构件32和处理室11之间。排气装置40减小由密封构件35和36，冷却构件32和处理室11包围的空间S中的压力。控制装置50控制排气装置40，当高频电力未施加到线圈23时，减小空间S中的压力，并且当向线圈23施加高频电力时将空间S中的压力设定为大气压。

6. 发明授权

US08771461B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08771461B2
公开(公告)日：2014-07-08
申请号：US12922520
申请日：2008-12-03
申请人： Toshihiro Hayami , Yasuyuki Hayashi
发明人： Toshihiro Hayami , Yasuyuki Hayashi
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32458 , H01J37/32623 , H01L21/6719 , H01L21/68742
摘要： The present invention relates to a plasma processing apparatus in which it is possible to efficiently perform maintenance of a processing chamber. A plasma processing apparatus has a processing chamber including a lower chamber and an upper chamber, a platen on which a silicon substrate is placed, a processing gas supply device, coils, high-frequency power supply unit for coil, an elevating board with a through hole provided to be vertically movable, an elevating mechanism for supporting and moving the elevating board, and a fixing mechanism for fixing the upper chamber. The fixing member is configured from a fixing board, first fixing bolts for connecting and fixing a top plate to the elevating board using the fixing board, second fixing bolts for fixing a flange portion of a holding member to an annular plate, and third fixing bolts for fixing the annular plate to a sidewall of the lower chamber.
摘要翻译：等离子体处理装置技术领域本发明涉及能够有效地进行处理室的维护的等离子体处理装置。一种等离子体处理装置具有包括下室和上室的处理室，放置有硅基板的压板，处理气体供给装置，线圈，线圈用高频电源单元，具有通孔的升降板提供为可垂直移动的孔，用于支撑和移动升降板的升降机构，以及用于固定上室的固定机构。固定构件由固定板构成，第一固定螺栓用于使用固定板将顶板连接并固定到升降板，用于将保持构件的凸缘部固定到环形板的第二固定螺栓和第三固定螺栓用于将环形板固定到下室的侧壁。

7. 发明申请

US20110005684A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20110005684A1
公开(公告)日：2011-01-13
申请号：US12922520
申请日：2008-12-03
申请人： Toshihiro Hayami , Yasuyuki Hayashi
发明人： Toshihiro Hayami , Yasuyuki Hayashi
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32458 , H01J37/32623 , H01L21/6719 , H01L21/68742
摘要： The present invention relates to a plasma processing apparatus in which it is possible to efficiently perform maintenance of a processing chamber. A plasma processing apparatus 1 has a processing chamber 11 including a lower chamber 12 and an upper chamber 13, a platen 20 on which a silicon substrate K is placed, a processing gas supply device 27, coils 32, high-frequency power supply unit for coil 33, an elevating board 41 with a through hole 41a provided to be vertically movable, an elevating mechanism 42 for supporting and moving up and down the elevating board 41, and a fixing mechanism 46 for fixing the upper chamber 13. The fixing member 46 is configured from a fixing board 47, first fixing bolts 48, 49 for connecting and fixing an top plate 16 to the elevating board 41 using the fixing board 47, second fixing bolts 50 for fixing a flange portion 32b of a holding member 32 to an annular plate 14, and third fixing bolts 51 for fixing the annular plate 14 to a sidewall 12a of the lower chamber 12.
摘要翻译：等离子体处理装置技术领域本发明涉及能够有效地进行处理室的维护的等离子体处理装置。等离子体处理装置1具有包括下室12和上室13的处理室11，放置硅基板K的压板20，处理气体供给装置27，线圈32，高频电源单元线圈33，具有设置成可垂直移动的通孔41a的升降板41，用于支撑并升降升降板41的升降机构42，以及用于固定上部室13的固定机构46.固定构件46 由固定板47构成，第一固定螺栓48,49用于使用固定板47将顶板16连接并固定到升降板41;第二固定螺栓50，用于将保持构件32的凸缘部分32b固定到环形板14和用于将环形板14固定到下室12的侧壁12a的第三固定螺栓51。

8. 发明申请

US20060207507A1 Substrate supporting member and substrate processing apparatus 有权
标题翻译：基板支撑构件和基板处理装置
公开(公告)号：US20060207507A1
公开(公告)日：2006-09-21
申请号：US11370145
申请日：2006-03-08
申请人： Kaoru Oohashi , Toshihiro Hayami
发明人： Kaoru Oohashi , Toshihiro Hayami
IPC分类号： C23C16/00
CPC分类号： H01L21/67109 , H01J37/32724 , H01L21/6875 , H01L21/68785
摘要： A substrate supporting member, and a substrate processing apparatus including the substrate supporting member are provided. The substrate supporting member for mounting and supporting a substrate on a substrate supporting surface thereof, and controlling a temperature of the substrate by thermal transfer between the substrate and the substrate supporting surface, wherein the substrate supporting surface is smaller than the substrate, and includes a central region, an intermediate region, and a peripheral region. A thermal conductivity between the substrate and the peripheral region is greater than that between the substrate and the central region which is greater than that between the substrate and the intermediate region located between the central region and the peripheral region.
摘要翻译：提供了基板支撑构件，以及包括基板支撑构件的基板处理装置。一种用于在其基板支撑表面上安装和支撑基板的基板支撑构件，并且通过基板和基板支撑表面之间的热转移来控制基板的温度，其中基板支撑表面小于基板，并且包括中央区域，中间区域和周边区域。衬底和外围区域之间的导热性大于衬底和中心区域之间的热导率，其大于衬底与位于中心区域和外围区域之间的中间区域之间的热导率。

9. 发明申请

US20060201172A1 Temperature control system and substrate processing apparatus 有权
标题翻译：温度控制系统和基板处理装置
公开(公告)号：US20060201172A1
公开(公告)日：2006-09-14
申请号：US11370858
申请日：2006-03-09
申请人： Kengo Kaneko , Toshihiro Hayami
发明人： Kengo Kaneko , Toshihiro Hayami
IPC分类号： F25D17/00 , F25D17/02
CPC分类号： F25D17/02 , H01L21/67109
摘要： A temperature control system and a substrate processing apparatus are provided. The temperature control system for controlling temperatures of one or more members of a substrate processing apparatus includes a circulation system for circulating a first coolant to pass through the inside of each of the members, a heat exchanger for performing heat exchange between the first coolant of the circulation system and a second coolant, and a chiller for supplying the second coolant to the heat exchanger, wherein the circulation system includes a branch line for each of the members passing through the inside thereof, the branch line for each of the members is provided with a heating member for heating the first coolant supplied thereto, and the heat exchanger is installed in a room where the substrate processing apparatus is installed.
摘要翻译：提供了温度控制系统和基板处理装置。用于控制基板处理装置的一个或多个构件的温度的温度控制系统包括循环系统，用于使第一冷却剂循环通过每个构件的内部;热交换器，用于在第一冷却剂循环系统和第二冷却剂，以及用于将第二冷却剂供应到热交换器的冷却器，其中循环系统包括用于每个通过其内部的构件的分支管线，每个构件的分支管线设置有用于加热供应到其上的第一冷却剂的加热构件，并且热交换器安装在安装基板处理装置的房间中。

10. 发明申请

US20050011452A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20050011452A1
公开(公告)日：2005-01-20
申请号：US10854142
申请日：2004-05-27
申请人： Toshihiro Hayami , Etsuji Ito , Itsuko Sakai
发明人： Toshihiro Hayami , Etsuji Ito , Itsuko Sakai
IPC分类号： H01J37/32 , C23C16/00
CPC分类号： H01J37/32174 , H01J37/32082
摘要： A low-cost plasma processing apparatus which permits reduction of the cost, as well as reduction of the loss of transmitted power. The plasma processing apparatus 1 has an apparatus main body 2 and auxiliary equipment 3. The auxiliary equipment 3 is comprised of a power supply apparatus 5 that supplies power to a processing chamber 4, and a plurality of dry pumps 6 and 7, and so on. The power supply apparatus 5 is comprised of a matching unit 9, an RF amplifier 13 that is connected to the matching unit 9 via a coaxial cable 24, and a power controller 12 having a DC amplifier 14 therein. The RF amplifier 13 is formed in a separate body to the DC amplifier 14 and disposed in a position away from the DC amplifier 14 and close to the matching unit 9, and is connected to the DC amplifier 14 via an ordinary cable 25.
摘要翻译：一种低成本的等离子体处理装置，其允许降低成本，并且减少发射功率的损失。等离子体处理装置1具有设备主体2和辅助设备3.辅助设备3包括向处理室4供电的供电设备5和多个干泵6和7等。电源装置5由匹配单元9，经由同轴电缆24连接到匹配单元9的RF放大器13以及其中具有DC放大器14的功率控制器12组成。 RF放大器13形成在与DC放大器14分离的主体中，并且设置在远离DC放大器14并靠近匹配单元9的位置，并且通过普通电缆25连接到DC放大器14。

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