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    • 2. 发明授权
    • Method of and apparatus for eliminating interblock distortion due to
compressed image data
    • 用于消除压缩图像数据造成的块间失真的方法和装置
    • US4903138A
    • 1990-02-20
    • US333444
    • 1989-04-05
    • Masami Aragaki
    • Masami Aragaki
    • G03F3/08G06T5/00G06T9/00H04N1/41H04N1/415H04N7/133
    • H04N19/98H04N1/41
    • Interblock distortion often appears on a boundary of pixel blocks in a reproduced image produced from compressed image data. The interblock distortion is eliminated by correcting a density distribution in the reproduced image. First, an average density (A.sub.ij) of a selected pixel block (B.sub.ij) is computed. Second, a standard deviation (.sigma..sub.ij) of a density distribution in the selected deviation is computed. If the standard deviation is equal to zero, correction value distributions (.DELTA.f.sub.m, .DELTA.f.sub.n) along a main scanning direction and a subscanning direction are obtained. Finally, corrected density distribution (f.sub.mn) is obtained as a sum of the average density and the correction value distributions.
    • 在由压缩图像数据产生的再现图像中的像素块的边界上经常出现块间失真。 通过校正再现图像中的浓度分布来消除帧间失真。 首先,计算出所选择的像素块(Bij)的平均密度(Aij),其次计算所选择的偏差中的密度分布的标准偏差(sigma ij),如果标准偏差等于零,则校正值分布 DELTA fm,DELTA fn)沿主扫描方向和副扫描方向。 最后,获得校正密度分布(fmn)作为平均密度和校正值分布之和。
    • 8. 发明授权
    • Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
    • 用于具有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物
    • US08114775B2
    • 2012-02-14
    • US12352700
    • 2009-01-13
    • Junaid Ahmed SiddiquiDaniel Hernandez CastilloSteven Masami AragakiRobin Edward Richards
    • Junaid Ahmed SiddiquiDaniel Hernandez CastilloSteven Masami AragakiRobin Edward Richards
    • H01L21/302
    • C09K3/1463C09G1/02H01L21/02074H01L21/3212H01L21/32125
    • A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten. The present invention also pertains to surface-modified colloidal abrasive polishing compositions and associated methods of using these compositions, particularly for chemical mechanical planarization, wherein the slurry comprises low levels of chelating free radical quenchers, non-chelating free radical quenchers, or both.
    • 化学机械抛光组合物包含1)水,2)任选的研磨材料,3)氧化剂,优选每种型氧化剂,4)少量可溶性金属离子氧化剂/抛光促进剂,金属离子抛光促进剂 与颗粒结合,例如磨料颗粒或两者; 和5)选自a)少量螯合剂中的至少一种,b)少量的二羟基烯醇化合物,和c)少量的有机促进剂。 少于800ppm,优选在约100ppm和500ppm之间的抗坏血酸是优选的二羟基烯醇化合物。 抛光组合物和方法对于在集成电路中发现的基本上所有的金属和金属化合物都是有用的,但对钨尤其有用。 本发明还涉及表面改性的胶体研磨抛光组合物以及使用这些组合物,特别是用于化学机械平面化的相关方法,其中浆料包含低水平的螯合自由基猝灭剂,非螯合自由基猝灭剂或二者。
    • 9. 发明授权
    • Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
    • 用于具有金属离子氧化剂的化学机械抛光组合物中的二羟基烯醇化合物
    • US07476620B2
    • 2009-01-13
    • US11387934
    • 2006-03-24
    • Junaid Ahmed SiddiquiDaniel Hernandez CastilloSteven Masami AragakiRobin Edward Richards
    • Junaid Ahmed SiddiquiDaniel Hernandez CastilloSteven Masami AragakiRobin Edward Richards
    • H01L21/302
    • C09K3/1463C09G1/02H01L21/02074H01L21/3212H01L21/32125
    • A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten. The present invention also pertains to surface-modified colloidal abrasive polishing compositions and associated methods of using these compositions, particularly for chemical mechanical planarization, wherein the slurry comprises low levels of chelating free radical quenchers, non-chelating free radical quenchers, or both.
    • 化学机械抛光组合物包含1)水,2)任选的研磨材料,3)氧化剂,优选每种型氧化剂,4)少量可溶性金属离子氧化剂/抛光促进剂,金属离子抛光促进剂 与颗粒结合,例如磨料颗粒或两者; 和5)选自a)少量螯合剂中的至少一种,b)少量的二羟基烯醇化合物,和c)少量的有机促进剂。 少于800ppm,优选在约100ppm和500ppm之间的抗坏血酸是优选的二羟基烯醇化合物。 抛光组合物和方法对于在集成电路中发现的基本上所有的金属和金属化合物都是有用的,但对钨尤其有用。 本发明还涉及表面改性的胶体研磨抛光组合物以及使用这些组合物,特别是用于化学机械平面化的相关方法,其中浆料包含低水平的螯合自由基猝灭剂,非螯合自由基猝灭剂或二者。