专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100003825A1 PLASMA ETCHING METHOD, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM 有权
标题翻译：等离子体蚀刻方法，控制程序和计算机存储介质
公开(公告)号：US20100003825A1
公开(公告)日：2010-01-07
申请号：US12497106
申请日：2009-07-02
申请人： Masahiro OGASAWARA , Sungtae Lee
发明人： Masahiro OGASAWARA , Sungtae Lee
IPC分类号： H01L21/467
CPC分类号： H01L21/31144 , H01J37/32091 , H01J37/32935 , H01L21/0337 , H01L21/31116 , H01L21/31122
摘要： A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are stacked in order from bottom, includes the first organic film etching step, the treatment step and the second organic film etching step when the organic film is etched to form a mask pattern of the to-be-etched film. In the first organic film etching step, a portion of the organic film is etched. In the treatment step, the Si-containing film and the organic film are exposed to plasma of a rare gas after the first organic film etching step. In the second organic film etching step, the remaining portion of the organic film is etched after the treatment step.
摘要翻译：一种等离子体蚀刻方法，用于等离子体蚀刻至少包括要蚀刻的膜的目标衬底，成为被蚀刻膜的掩模的有机膜和从底部依次层叠的含Si膜包括第一有机膜蚀刻步骤，处理步骤和第二有机膜蚀刻步骤，当有机膜被蚀刻以形成被蚀刻膜的掩模图案时。在第一有机膜蚀刻步骤中，有机膜的一部分被蚀刻。在处理步骤中，在第一有机膜蚀刻步骤之后，将含Si膜和有机膜暴露于稀有气体的等离子体。在第二有机膜蚀刻步骤中，在处理步骤之后蚀刻剩余部分有机膜。

2. 发明申请

US20130029493A1 PLASMA ETCHING METHOD, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM 有权
标题翻译：等离子体蚀刻方法，控制程序和计算机存储介质
公开(公告)号：US20130029493A1
公开(公告)日：2013-01-31
申请号：US13644619
申请日：2012-10-04
申请人： Masahiro OGASAWARA , Sungtae Lee
发明人： Masahiro OGASAWARA , Sungtae Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/31144 , H01J37/32091 , H01J37/32935 , H01L21/0337 , H01L21/31116 , H01L21/31122
摘要： A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are stacked in order from bottom, includes the first organic film etching step, the treatment step and the second organic film etching step when the organic film is etched to form a mask pattern of the to-be-etched film. In the first organic film etching step, a portion of the organic film is etched. In the treatment step, the Si-containing film and the organic film are exposed to plasma of a rare gas after the first organic film etching step. In the second organic film etching step, the remaining portion of the organic film is etched after the treatment step.
摘要翻译：一种等离子体蚀刻方法，用于等离子体蚀刻至少包括要蚀刻的膜的目标衬底，成为被蚀刻膜的掩模的有机膜和从底部依次层叠的含Si膜包括第一有机膜蚀刻步骤，处理步骤和第二有机膜蚀刻步骤，当有机膜被蚀刻以形成被蚀刻膜的掩模图案时。在第一有机膜蚀刻步骤中，有机膜的一部分被蚀刻。在处理步骤中，在第一有机膜蚀刻步骤之后，将含Si膜和有机膜暴露于稀有气体的等离子体。在第二有机膜蚀刻步骤中，在处理步骤之后蚀刻剩余部分有机膜。

3. 发明申请

US20070224709A1 PLASMA PROCESSING METHOD AND APPARATUS, CONTROL PROGRAM AND STORAGE MEDIUM 审中-公开
标题翻译：等离子体处理方法和装置，控制程序和存储介质
公开(公告)号：US20070224709A1
公开(公告)日：2007-09-27
申请号：US11689840
申请日：2007-03-22
申请人： Masahiro OGASAWARA
发明人： Masahiro OGASAWARA
IPC分类号： H01L21/00 , G06F19/00 , C23F1/00 , H01L21/306 , H01L21/302
CPC分类号： H01J37/32642
摘要： A plasma processing method for performing a plasma process by employing a plasma processing apparatus including a processing chamber for performing the plasma process on a target object, a mounting table for mounting thereon the target object in the processing chamber, a peripheral member disposed around a periphery of the mounting table, and a voltage application unit. The voltage application unit applies a voltage to the peripheral member based on an amount of abrasion of the peripheral member, a result of a pre-performed processing or a variation of an electric field formed over the peripheral member.
摘要翻译：一种等离子体处理方法，其通过采用等离子体处理装置来进行等离子体处理，所述等离子体处理装置包括用于对目标物体进行等离子体处理的处理室，用于将目标物体安装在处理室中的安装台，的安装台，以及电压施加单元。电压施加单元基于周边构件的磨损量，预处理的结果或周边构件上形成的电场的变化的结果，向周边构件施加电压。

4. 发明申请

US20120037316A1 METHOD OF SUPPLYING ETCHING GAS AND ETCHING APPARATUS 有权
标题翻译：提供蚀刻气体和蚀刻装置的方法
公开(公告)号：US20120037316A1
公开(公告)日：2012-02-16
申请号：US13206875
申请日：2011-08-10
申请人： Masahiro OGASAWARA , Yoshiyuki KATO , Hideki MIZUNO , Yoshinobu HAYAKAWA
发明人： Masahiro OGASAWARA , Yoshiyuki KATO , Hideki MIZUNO , Yoshinobu HAYAKAWA
IPC分类号： C23F1/08 , B65B65/00
CPC分类号： H01L21/30655 , H01J37/32091 , H01J37/32449 , H01J2237/3341
摘要： A method of supplying an etching gas includes: supplying a first etching gas used in an etching process into a processing container; and supplying a second etching gas used in the etching process into the processing container, in which, when the first etching gas and the second etching gas are switched therebetween, only a small amount of a gas, which is needed as an etching gas before the switching and is not needed as an etching gas after the switching, is continuously supplied into the processing container.
摘要翻译：提供蚀刻气体的方法包括：将用于蚀刻工艺的第一蚀刻气体供应到处理容器中; 并且将在蚀刻工艺中使用的第二蚀刻气体供应到处理容器中，其中当第一蚀刻气体和第二蚀刻气体在其之间切换时，仅仅少量的气体作为蚀刻气体切换并且不需要切换之后的蚀刻气体，被连续地供给到处理容器中。

5. 发明申请

US20090229759A1 ANNULAR ASSEMBLY FOR PLASMA PROCESSING, PLASMA PROCESSING APPARATUS, AND OUTER ANNULAR MEMBER 审中-公开
标题翻译：等离子体处理装置，等离子体处理装置和外部会员
公开(公告)号：US20090229759A1
公开(公告)日：2009-09-17
申请号：US12399375
申请日：2009-03-06
申请人： Masahiro OGASAWARA , Akihito Toda , Hiroshi Tsuchiya , Shigeki Doba
发明人： Masahiro OGASAWARA , Akihito Toda , Hiroshi Tsuchiya , Shigeki Doba
IPC分类号： H01L21/306
CPC分类号： H01J37/20 , H01J37/32495 , H01J37/32623 , H01J37/32642
摘要： An annular assembly for plasma processing which can prevent poor attraction of a substrate. The annular assembly is comprised of a focus ring that is mounted on a mounting stage and disposed such as to surround an outer periphery of a substrate subjected to the plasma processing, and an outer annular member that is disposed such as to surround an outer periphery of the focus ring. The outer annular member has an exposed surface that is exposed into a processing space in which plasma is produced, and the exposed surface is covered with yttria.
摘要翻译：用于等离子体处理的环形组件，其可以防止衬底的不良吸引。环形组件由聚焦环构成，该聚焦环安装在安装台上并且被布置成围绕经受等离子体处理的基板的外周，以及外环形构件，其设置成围绕外部环绕焦点环。外环形构件具有暴露于其中产生等离子体的处理空间中的暴露表面，并且暴露的表面被氧化钇覆盖。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式