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1. 发明授权

US07141496B2 Method of treating microelectronic substrates 失效
标题翻译：处理微电子基板的方法
公开(公告)号：US07141496B2
公开(公告)日：2006-11-28
申请号：US10762905
申请日：2004-01-22
申请人： James P. DeYoung , James B. McClain , Stephen M. Gross , Doug Taylor , Mark I. Wagner , David Brainard
发明人： James P. DeYoung , James B. McClain , Stephen M. Gross , Doug Taylor , Mark I. Wagner , David Brainard
IPC分类号： H01L21/44
CPC分类号： H01L21/32051 , H01L21/283 , H01L21/288 , H01L21/76814 , H01L21/76843 , H01L21/76871
摘要： A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.
摘要翻译：一种处理半导体衬底的电介质表面部分的方法，包括以下步骤：（a）提供具有电介质表面部分的半导体衬底; 然后（b）用涂层试剂处理所述电介质表面部分，所述涂覆试剂包含与配位基团偶联的反应基团，所述配位基团与其结合金属，使得金属沉积在电介质表面部分上产生用金属处理的表面部分。

2. 发明授权

US06905555B2 Methods for transferring supercritical fluids in microelectronic and other industrial processes 失效
标题翻译：在微电子和其他工业过程中转移超临界流体的方法
公开(公告)号：US06905555B2
公开(公告)日：2005-06-14
申请号：US10448474
申请日：2003-05-30
申请人： James P. DeYoung , James B. McClain , Stephen M. Gross , Mark I. Wagner
发明人： James P. DeYoung , James B. McClain , Stephen M. Gross , Mark I. Wagner
IPC分类号： B05D1/18 , B08B7/00 , B81B3/00 , B81C1/00 , H01L21/00 , H01L21/306 , B08B3/00
CPC分类号： B08B7/0021 , B05D1/18 , B05D2401/90 , H01L21/02063 , H01L21/02101 , H01L21/67017 , H01L21/67028 , Y10T137/0324
摘要： A method of displacing a supercritical fluid from a pressure vessel (e.g., in a microelectronic manufacturing process), with the steps of: providing an enclosed pressure vessel containing a first supercritical fluid (said supercritical fluid preferably comprising carbon dioxide); adding a second fluid (typically also a supercritical fluid) to said vessel, with said second fluid being added at a pressure greater than the pressure of the first supercritical fluid, and with said second fluid having a density less than that of the first supercritical fluid; forming an interface between the first supercritical fluid and the second fluid; and displacing at least a portion of the first supercritical fluid from the vessel with the pressure of the second, preferably fluid while maintaining the interface therebetween.
摘要翻译：一种从压力容器（例如，在微电子制造过程中）置换超临界流体的方法，其步骤包括：提供包含第一超临界流体（所述超临界流体优选包含二氧化碳）的封闭压力容器; 向所述容器中加入第二流体（通常也是超临界流体），其中所述第二流体以大于第一超临界流体的压力的压力加入，并且所述第二流体的密度小于第一超临界流体的密度 ; 在所述第一超临界流体和所述第二流体之间形成界面; 并且使第二超临界流体的至少一部分与第二流体（优选流体）的压力从容器移位，同时保持其间的界面。

3. 发明授权

US09004086B2 Methods and apparatus for displacing fluids from substrates using supercritical CO2 有权
标题翻译：使用超临界CO2从底物中移出流体的方法和装置
公开(公告)号：US09004086B2
公开(公告)日：2015-04-14
申请号：US12939896
申请日：2010-11-04
申请人： Ronda K. Nixon , Iqbal A. Shareef , Mark I. Wagner , Robert McAndrew , Tony Ray Kroeker
发明人： Ronda K. Nixon , Iqbal A. Shareef , Mark I. Wagner , Robert McAndrew , Tony Ray Kroeker
IPC分类号： B08B3/12 , B08B6/00 , B08B7/00 , H01L21/67 , H01L21/02
CPC分类号： B08B7/0021 , H01L21/02101 , H01L21/67051 , H01L21/6719
摘要： A processing chamber for post-wet-etch removing of drying fluid (DF) is disclosed. The chamber includes a chamber wall surrounding a processing volume and a plurality of nozzles disposed annularly about the processing volume and arranged into a set of nozzle rows that includes at least one nozzle row. The chamber also includes a plenum and a set of manifolds coupled to the plurality of nozzles to deliver the supercritical CO2 to the plurality of nozzles. Each nozzle has a nozzle outlet directed toward an interior portion of the processing volume and the nozzles are configured to flow the supercritical CO2 toward the substrates in a manner that minimizes recirculation loops and vortices.
摘要翻译：公开了一种用于湿法蚀刻去除干燥流体（DF）的处理室。该室包括围绕处理容积的室壁和围绕处理容积环状布置并且布置成包括至少一个喷嘴排的一组喷嘴行的多个喷嘴。该腔室还包括一个气室和一组联接到多个喷嘴的歧管，以将超临界CO 2输送到多个喷嘴。每个喷嘴具有指向处理体积的内部部分的喷嘴出口，并且喷嘴构造成以使循环回路和涡流最小化的方式朝向基板流动超临界CO 2。

4. 发明申请

US20100071726A1 METHOD AND SYSTEM OF DRYING A MICROELECTRONIC TOPOGRAPHY 有权
标题翻译：干涉微电子地理学的方法与系统
公开(公告)号：US20100071726A1
公开(公告)日：2010-03-25
申请号：US12562450
申请日：2009-09-18
申请人： Mark I. Wagner , James P. DeYoung
发明人： Mark I. Wagner , James P. DeYoung
IPC分类号： F26B7/00 , F26B9/00 , F26B21/10
CPC分类号： H01L21/67034 , H01L21/02057 , H01L21/67028 , Y10S134/902
摘要： Drying a microelectronic topography. At least some of the illustrative embodiments are methods that include placing a microelectronic topography inside a process chamber, providing a non-aqueous liquid to the process chamber until at least 90% of the volume of the process chamber contains the non-aqueous liquid, pressurizing the process chamber by way of a fluid different than the non-aqueous liquid, ceasing activity with respect to the process chamber until the non-aqueous liquid and fluid form a mixture that is substantially homogenous, venting the process chamber while simultaneously providing the fluid to the process chamber, and venting the process chamber in a manner which prevents formation of liquid in the process chamber.
摘要翻译：干燥微电子地形。示例性实施例中的至少一些是包括将微电子拓扑放置在处理室内的方法，向处理室提供非水性液体，直到处理室的体积的至少90％含有非水性液体，加压处理室通过不同于非水液体的流体，停止相对于处理室的活性，直到非水性液体和流体形成基本均匀的混合物，排出处理室，同时将流体提供给处理室，并以防止处理室中的液体形成的方式排出处理室。

5. 发明授权

US07592035B2 Method of coating microelectronic substrates 失效
标题翻译：涂布微电子基板的方法
公开(公告)号：US07592035B2
公开(公告)日：2009-09-22
申请号：US11261299
申请日：2005-10-28
申请人： James P. DeYoung , James B. McClain , Stephen M. Gross , Doug Taylor , Mark I. Wagner , David Brainard
发明人： James P. DeYoung , James B. McClain , Stephen M. Gross , Doug Taylor , Mark I. Wagner , David Brainard
IPC分类号： B05D5/12
CPC分类号： H01L21/283 , B05D1/18 , B05D2401/90 , H01L21/28556 , H01L21/288 , H01L21/67028 , H01L28/65
摘要： A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.
摘要翻译：涂覆基材的方法包括以下步骤：（a）在封闭容器中提供基材，所述基材具有表面部分; （b）用第一超临界流体至少部分地填充封闭的容器，使得所述第一超临界流体接触表面部分，第一超临界流体携带或包含涂层组分; 然后（c）向所述反应容器中加入单独的压缩气体气氛，使得在所述第一超临界流体和所述单独的压缩气体气氛之间形成边界，所述单独的压缩气体气氛的密度小于所述第一超临界流体; 然后（d）通过将所述单独的压缩气体气氛继续加入到所述容器中，使所述边界移动穿过所述表面部分并且将涂层组分的薄膜沉积在所述微电子衬底上，从而使所述第一超临界流体从所述容器移位。

6. 发明授权

US09620410B1 Methods for preventing precipitation of etch byproducts during an etch process and/or subsequent rinse process 有权
公开(公告)号：US09620410B1
公开(公告)日：2017-04-11
申请号：US12356170
申请日：2009-01-20
申请人： Mark I. Wagner , James P. DeYoung
发明人： Mark I. Wagner , James P. DeYoung
IPC分类号： H01L21/768 , H01L21/02
CPC分类号： H01L21/76814 , H01L21/02068 , H01L21/02101 , H01L21/31111
摘要： Methods for processing a microelectronic topography include selectively etching a layer of the topography using an etch solution which includes a fluid in a supercritical or liquid state. In some embodiments, the etch process may include introducing a fresh composition of the etch solution into a process chamber while simultaneously venting the chamber to inhibit the precipitation of etch byproducts. A rinse solution including the fluid in a supercritical or liquid state may be introduced into the chamber subsequent to the etch process. In some cases, the rinse solution may include one or more polar cosolvents, such as acids, polar alcohols, and/or water mixed with the fluid to help inhibit etch byproduct precipitation. In addition or alternatively, at least one of the etch solution and rinse solution may include a chemistry which is configured to modify dissolved etch byproducts within an ambient of the topography to inhibit etch byproduct precipitation.

7. 发明申请

US20100072169A1 Methods and Systems for Preventing Feature Collapse During Microelectronic Topography Fabrication 有权
标题翻译：在微电子地形制作中防止特征崩溃的方法和系统
公开(公告)号：US20100072169A1
公开(公告)日：2010-03-25
申请号：US12237070
申请日：2008-09-24
申请人： James P. DeYoung , Mark I. Wagner , Tony R. Kroeker
发明人： James P. DeYoung , Mark I. Wagner , Tony R. Kroeker
IPC分类号： B44C1/22 , B08B3/14
CPC分类号： H01L21/31111 , H01L21/02068 , H01L21/31116
摘要： Methods for preventing feature collapse subsequent to etching a layer encasing the features include adding a non-aqueous liquid to a microelectronic topography having remnants of an aqueous liquid arranged upon its surface and subsequently exposing the topography to a pressurized chamber including a fluid at or greater than its saturated vapor pressure or critical pressure. The methods include flushing from the pressurized chamber liquid arranged upon the topography and, thereafter, venting the chamber in a manner sufficient to prevent liquid formation therein. The topography features may be submerged in a liquid while pressurizing the chamber. A process chamber used to prevent feature collapse includes a substrate holder for supporting a microelectronic topography, a vessel configured to contain the substrate holder, and a sealable region surrounding the substrate holder and the vessel. The chamber is configured to sequester wet chemistry supplied to the vessel from metallic surfaces of the sealable region.
摘要翻译：用于在蚀刻包围特征的层之后防止特征崩溃的方法包括将非水性液体添加到具有布置在其表面上的水性液体残留物的微电子拓扑，并随后将该形貌暴露于包括大于或等于其饱和蒸气压或临界压力。这些方法包括从设置在地形上的加压室液体冲洗，然后以足以防止其中形成液体的方式排出室。地形特征可以浸没在液体中，同时对腔室加压。用于防止特征崩溃的处理室包括用于支撑微电子拓扑的衬底保持器，构造成容纳衬底保持器的容器和围绕衬底保持器和容器的可密封区域。该室被配置为从可密封区域的金属表面隔离供应给容器的湿化学物质。

8. 发明授权

US08961701B2 Method and system of drying a microelectronic topography 有权
标题翻译：干燥微电子地形的方法和系统
公开(公告)号：US08961701B2
公开(公告)日：2015-02-24
申请号：US12562450
申请日：2009-09-18
申请人： Mark I. Wagner , James P. DeYoung
发明人： Mark I. Wagner , James P. DeYoung
IPC分类号： B08B3/04 , H01L21/67 , H01L21/02
CPC分类号： H01L21/67034 , H01L21/02057 , H01L21/67028 , Y10S134/902
摘要： Drying a microelectronic topography. At least some of the illustrative embodiments are methods that include placing a microelectronic topography inside a process chamber, providing a non-aqueous liquid to the process chamber until at least 90% of the volume of the process chamber contains the non-aqueous liquid, pressurizing the process chamber by way of a fluid different than the non-aqueous liquid, ceasing activity with respect to the process chamber until the non-aqueous liquid and fluid form a mixture that is substantially homogenous, venting the process chamber while simultaneously providing the fluid to the process chamber, and venting the process chamber in a manner which prevents formation of liquid in the process chamber.
摘要翻译：干燥微电子地形。示例性实施例中的至少一些是包括将微电子拓扑放置在处理室内的方法，向处理室提供非水性液体，直到处理室的体积的至少90％含有非水性液体，加压处理室通过不同于非水液体的流体，停止相对于处理室的活性，直到非水性液体和流体形成基本均匀的混合物，排出处理室，同时将流体提供给处理室，并以防止处理室中的液体形成的方式排出处理室。

9. 发明授权

US08153533B2 Methods and systems for preventing feature collapse during microelectronic topography fabrication 有权
标题翻译：用于防止微电子地貌制造中的特征崩溃的方法和系统
公开(公告)号：US08153533B2
公开(公告)日：2012-04-10
申请号：US12237070
申请日：2008-09-24
申请人： James P. DeYoung , Mark I. Wagner
发明人： James P. DeYoung , Mark I. Wagner
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31111 , H01L21/02068 , H01L21/31116
摘要： Methods for preventing feature collapse subsequent to etching a layer encasing the features include adding a non-aqueous liquid to a microelectronic topography having remnants of an aqueous liquid arranged upon its surface and subsequently exposing the topography to a pressurized chamber including a fluid at or greater than its saturated vapor pressure or critical pressure. The methods include flushing from the pressurized chamber liquid arranged upon the topography and, thereafter, venting the chamber in a manner sufficient to prevent liquid formation therein. The topography features may be submerged in a liquid while pressurizing the chamber. A process chamber used to prevent feature collapse includes a substrate holder for supporting a microelectronic topography, a vessel configured to contain the substrate holder, and a sealable region surrounding the substrate holder and the vessel. The chamber is configured to sequester wet chemistry supplied to the vessel from metallic surfaces of the sealable region.
摘要翻译：用于在蚀刻包围特征的层之后防止特征崩溃的方法包括将非水性液体添加到具有布置在其表面上的含水液体残留物的微电子拓扑，并随后将该拓扑结构暴露于包括大于或等于其饱和蒸气压或临界压力。这些方法包括从设置在地形上的加压室液体冲洗，然后以足以防止其中形成液体的方式排出室。地形特征可以浸没在液体中，同时对腔室加压。用于防止特征崩溃的处理室包括用于支撑微电子拓扑的衬底保持器，构造成容纳衬底保持器的容器和围绕衬底保持器和容器的可密封区域。该室被配置为从可密封区域的金属表面隔离供应给容器的湿化学物质。

10. 发明授权

US06989172B2 Method of coating microelectronic substrates 失效
公开(公告)号：US06989172B2
公开(公告)日：2006-01-24
申请号：US10681515
申请日：2003-10-08
申请人： James P. DeYoung , James B. McClain , Stephen M. Gross , Doug Taylor , Mark I. Wagner , David Brainard
发明人： James P. DeYoung , James B. McClain , Stephen M. Gross , Doug Taylor , Mark I. Wagner , David Brainard
IPC分类号： B05D5/12 , B05D1/18
CPC分类号： H01L21/283 , B05D1/18 , B05D2401/90 , H01L21/28556 , H01L21/288 , H01L21/67028 , H01L28/65
摘要： A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

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