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1. 发明授权

US6031241A Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications 失效
标题翻译：毛细管放电极紫外灯源用于EUV微光刻等相关应用
公开(公告)号：US6031241A
公开(公告)日：2000-02-29
申请号：US1696
申请日：1997-12-31
申请人： William T. Silfvast , Mark A. Klosner , Gregory M. Shimkaveg
发明人： William T. Silfvast , Mark A. Klosner , Gregory M. Shimkaveg
IPC分类号： H01J35/20 , G01J3/10 , G03F7/20 , H01J61/12 , H01J61/28 , H01J61/30 , H05G2/00 , G21G4/00
CPC分类号： H05G2/003 , B82Y10/00 , G01J3/10 , G03F7/70016 , G03F7/70033 , G03F7/70916 , G03F7/70983 , H01J61/12 , H01J61/28 , H01J61/30 , H05G2/005
摘要： Capillary discharge extreme ultraviolet lamp sources for EUV microlithography and other applications. The invention covers operating conditions for a pulsed capillary discharge lamp for EUVL and other applications such as resist exposure tools, microscopy, interferometry, metrology, biology and pathology. Techniques and processes are described to mitigate against capillary bore erosion, pressure pulse generation, and debris formation in capillary discharge-powered lamps operating in the EUV. Additional materials are described for constructing capillary discharge devices fore EUVL and related applications. Further, lamp designs and configurations are described for lamps using gasses and metal vapors as the radiating species.
摘要翻译：毛细管放电极紫外灯源用于EUV微光刻等应用。本发明涵盖用于EUVL的脉冲毛细管放电灯和诸如抗蚀剂曝光工具，显微镜，干涉测量，计量学，生物学和病理学的其它应用的操作条件。描述了技术和过程，以减轻在EUV中操作的毛细管放电动力灯中的毛细管孔侵蚀，压力脉冲产生和碎片形成。描述了用于在EUVL和相关应用之前构建毛细管放电装置的附加材料。此外，对于使用气体和金属蒸气作为辐射种类的灯描述了灯的设计和配置。

2. 发明申请

US20100108820A1 Highly-integrated low-mass plastic film 审中-公开
标题翻译：高度集成的低质量塑料薄膜
公开(公告)号：US20100108820A1
公开(公告)日：2010-05-06
申请号：US11640608
申请日：2006-12-18
申请人： Mark A. Klosner , Kanti Jain
发明人： Mark A. Klosner , Kanti Jain
IPC分类号： B64G1/40 , B32B3/30 , B29C35/08
CPC分类号： B64G1/407 , Y10T428/24479
摘要： Low mass-per-unit-area plastic film, preferably polyimide, prepared by a process of controlled treating of a supply of plastic film, possibly with one surface reflectively coated, at a microlithography workstation with included photoablation optics. This treatment achieves significant controlled removal of material in a selected pattern by providing relative motion between untreated plastic film and the workstation's photoablation optics while controlling photoablation of a pattern in the film. The material has a significant quantity of the mass of its plastic removed by photoablation, leaving a tessellated pattern of ridges surrounding individual wells. The resulting low-mass, rip-resistant film retains the general attributes of a large-area plastic film. The treated film also retains its reflective surface, on which amorphous silicon may be deposited. The silicon may be thereafter crystallized, utilizing the same optics, and used for fabrication of microelectronics.
摘要翻译：通过可控地处理具有反射涂覆的一个表面的塑料膜供应的方法，在具有光照相光学的微光刻工作站处制备低质量 - 每单位面积塑料膜，优选聚酰亚胺。这种处理通过在控制胶片中的图案的光消除之间提供未处理的塑料膜和工作站的光消除光学元件之间的相对运动来实现对所选图案中的材料的显着控制的去除。该材料具有大量的通过光蚀刻去除的塑料的质量，留下围绕各个孔的细纹纹理的脊。所得到的低质量，耐撕裂膜保留了大面积塑料膜的一般属性。经处理的膜还保留其反射表面，其上可沉积非晶硅。此后，硅可以利用相同的光学元件结晶，并用于微电子学的制造。

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