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1. 发明授权

US4125876A Field access bubble lattice file device 失效
标题翻译：现场访问泡泡格文件设备
公开(公告)号：US4125876A
公开(公告)日：1978-11-14
申请号：US764230
申请日：1977-01-31
申请人： Magid Y. Dimyan
发明人： Magid Y. Dimyan
IPC分类号： G11C19/08
CPC分类号： G11C19/0841 , G11C19/0875
摘要： A bubble lattice file comprising a plurality of propagate elements of magnetic film material positioned as an overlay over bubble supporting material with each element spaced from the bubble material such that a spacing gradient is formed between the element and the bubble material in the direction of the bubble propagation path. The elements comprising the main lattice memory file are arranged to support a hexagonal lattice of bubbles with one bubble propagation path in the form of rows and the other propagation path comprising accessing channels in the form of spaced apart columns. Utilizing the translation force on a bubble domain produced by the spacing gradient between the magnetic film and the bubble material, all bubbles in the lattice may be translated along the rows by a monopolar magnetic field applied in the row direction and when accessing is required, a monopolar field in the column direction is applied and all bubbles in equilibrium in the element of the rows which intersect the columns will move to the elements of the accessing channels and along its elements upon the continued application of the field ultimately exiting into a reading station. Concurrently, the read data may be reentered into the lattice at the entrance end of the columns.
摘要翻译：气泡晶格文件包括多个传播的磁性薄膜材料的传播元件，其定位为气泡支撑材料上的覆盖层，每个元件与气泡材料间隔开，使得在气泡方向上在元件和气泡材料之间形成间隔梯度传播路径。包括主晶格存储器文件的元件被布置成支撑具有行形式的一个气泡传播路径的气泡的六边形格子，并且另一个传播路径包括以间隔开的列的形式访问通道。利用由磁性膜和气泡材料之间的间隔梯度产生的气泡区域上的平移力，晶格中的所有气泡可以通过沿行方向施加的单极磁场沿着行平移，并且当需要访问时，施加列方向上的单极场，并且在连续施加场最后退出到读站中时，与列相交的行中的元素中的所有气泡平衡的所有气泡将移动到进入通道的元件并沿其元件移动。同时，读取的数据可以在列的入口端重新进入格子。

2. 发明授权

US4360899A Magnetic domain random access memory 失效
标题翻译：磁畴随机存取存储器
公开(公告)号：US4360899A
公开(公告)日：1982-11-23
申请号：US121854
申请日：1980-02-15
申请人： Magid Y. Dimyan , Carlos A. Castro
发明人： Magid Y. Dimyan , Carlos A. Castro
IPC分类号： G11C11/14 , G11C11/155
CPC分类号： G11C11/14
摘要： In a non-volatile random access memory, a selected one of a plurality of magnetic cells arranged in an array on a major surface of a substrate is inductively switched between opposite remanent, i.e. permanent, states upon the simultaneous application of electrical pulses to a pair of conductors intersecting adjacent the selected cell, each of the electrical pulses having an amplitude less than, but the sum thereof being at least equal to, the amplitude required to inductively switch the remanent state of the selected cell.
摘要翻译：在非易失性随机存取存储器中，在将电脉冲同时施加到一对时，在衬底的主表面上以阵列布置的多个磁细胞中的选定的一个磁性单元在相对的剩余（即永久）状态之间被感应地切换的导体与所选择的单元相邻，每个电脉冲的振幅小于但其总和至少等于感应地切换所选择的单元的剩余状态所需的幅度。

3. 发明授权

US4176404A Bubble memory structure with enhanced data density 失效
标题翻译：气泡记忆结构具有增强的数据密度
公开(公告)号：US4176404A
公开(公告)日：1979-11-27
申请号：US869349
申请日：1978-01-13
申请人： Magid Y. Dimyan , Wayne C. Hubbell , Christopher T. M. Chang , John C. Linn
发明人： Magid Y. Dimyan , Wayne C. Hubbell , Christopher T. M. Chang , John C. Linn
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0875
摘要： A magnetic bubble memory structure having an enhanced storage density is made possible by reducing the circuit period, that is the distance between bubbles, in the storage section of the device. This reduction of the circuit period is made possible by using a gap tolerant propagation element, e.g. asymmetrical chevrons. The bubble storage sections are structured such that the areas closest to the transfer gates have a larger circuit period than the remainder of the storage section. The bubble chip architecture utilizing this means of enhancing the storage density may be of the major-minor loop configuration or the block-replicate configuration. Bubble storage sections in the form of loop structures may have a folded loop or an h loop configuration as well as a closed loop configuration. The reduction in circuit period accomplishes enhancement of the storage density without reducing the bubble diameter and other minimum circuit features to achieve this goal.
摘要翻译：通过减少设备的存储部分中的电路周期，即气泡之间的距离，可以实现具有增强的存储密度的磁性气泡存储器结构。电路周期的这种减小可以通过使用间隙容许传播元件，例如，不对称的人字纹气泡存储部分被构造成使得最靠近传输门的区域具有比存储部分的其余部分更大的电路周期。利用这种提高存储密度的手段的气泡芯片架构可以是主要次要环路配置或块复制配置。循环结构形式的气泡存储部分可以具有折叠环或h环配置以及闭环配置。电路周期的减少实现了存储密度的提高，而不降低气泡直径和其他最小电路特征以实现这一目的。

4. 发明授权

US4153948A Adjustable magnetic bias field structure for magnetic bubble devices 失效
标题翻译：用于磁性气泡装置的可调偏磁场结构
公开(公告)号：US4153948A
公开(公告)日：1979-05-08
申请号：US881492
申请日：1978-02-27
申请人： Magid Y. Dimyan , John C. Unger
发明人： Magid Y. Dimyan , John C. Unger
IPC分类号： G11C11/14 , G11C19/08 , H01F3/14
CPC分类号： H01F3/14 , G11C19/085
摘要： An adjustable magnetic bias field structure for magnetic bubble devices. A pair of parallel facing magnetically permeable plates are adjustably separated by a number of threaded magnetically hard cylindrical rods or slugs slotted at one end. Threaded plastic rings fastened around holes provided in the pair of permeable plates engage the threads of the slotted rods to provide the adjustment feature. A magnetic bubble device is placed between the two permeable plates.
摘要翻译：一种用于磁性气泡装置的可调磁偏置场结构。一对平行的导磁板可以通过一定数量的带螺纹的磁性硬的圆柱形杆或在一端开槽的小块来调节。固定在一对可渗透板中的孔周围的螺纹塑料环与开槽杆的螺纹啮合以提供调节特征。在两个可渗透板之间放置一个磁性气泡装置。

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