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    • 2. 发明授权
    • Process for forming semiconductor alloys having a desired bandgap
    • 用于形成具有期望带隙的半导体合金的工艺
    • US4376659A
    • 1983-03-15
    • US292755
    • 1981-08-13
    • Carlos A. Castro
    • Carlos A. Castro
    • C30B1/10C30B33/00H01L31/18H01L21/42H01L21/36H01L21/423
    • C30B33/00C30B1/10C30B29/40H01L31/1832H01L31/1844Y02E10/544Y10S148/084
    • An epitaxial layer of a narrow-gap semiconductor is deposited on a substrate comprising a wider-gap semiconductor. The opposite surface of the substrate is then illuminated with light pulses at a wavelength corresponding to the desired bandgap of the resulting material. Each pulse causes localized heating where it first encounters a material having a sufficiently narrow bandgap to be an absorber at the wavelength of illumination. This localized heating will then cause interdiffusion, producing a layer of semiconductor alloy having a bandgap intermediate between the bandgaps of the two starting materials. Repetition of this step will have the effect of moving the region of localized absorption away from the original location, and toward the film/air interface. Since the desired end product composition will be transparent to the illumination applied, the process is inherently self-limiting. By appropriately selecting the wavelength of illumination applied, variously proportioned semiconductor compositions may be obtained, so that the bandgap of the resulting material may be arbitrarily selected to have any desired value between the bandgaps of the two starting materials. No surface damage is caused by this technique.
    • 将窄间隙半导体的外延层沉积在包括较宽间隙半导体的衬底上。 然后用对应于所得材料的期望带隙的波长的光脉冲照射衬底的相对表面。 每个脉冲引起局部加热,其中首先遇到具有足够窄带隙的材料成为在照明波长处的吸收体。 这种局部加热将导致相互扩散,从而产生一层半导体合金,其中两个起始材料的带隙之间具有带隙中间。 重复这一步将具有将局部吸收区域从原始位置移动到电影/空中界面的效果。 由于所需的最终产品组合对所施加的照明是透明的,所以该过程本质上是自限制的。 通过适当选择施加的照明波长,可以获得不同比例的半导体组合物,从而可以任意选择所得材料的带隙以在两个起始材料的带隙之间具有任何期望的值。 这种技术不会造成表面损伤。
    • 3. 发明授权
    • Process for forming HgCoTe alloys selectively by IR illumination
    • 通过IR照明选择性地形成HgCoTe合金的工艺
    • US4374678A
    • 1983-02-22
    • US269292
    • 1981-06-01
    • Carlos A. Castro
    • Carlos A. Castro
    • H01L31/10C30B1/10C30B29/48C30B33/00H01L21/208H01L21/36H01L21/363H01L21/42H01L31/18H01L21/423
    • C30B33/00C30B1/10C30B29/48H01L31/1832H01L31/1844Y02E10/544Y10S117/904Y10S148/084
    • A HgCdTe film is produced on a CdTe substrate, by depositing HgTe on a CdTe substrate, and then illuminating the substrate from the underside with infrared light at a wavelength longer than the desired operating wavelength (band-gap-equivalent wavelength) of the device. Since CdTe is transparent in the infrared, the light will reach the HgTe/CdTe interface. Since HgTe is an absorber in the infrared, most of the infrared radiation will be absorbed near the interface, which will cause intense localized heating and thus accelerate the interdiffusion of HgTe and CdTe. This interdiffusion will have the effect of moving the interface away from the original location, and toward the film/air interface. Since the desired end-product HgCdTe composition will be transparent to the infrared radiation applied, the process is inherently self-limiting. By appropriately selecting the infrared wavelength applied, variously proportioned HgCdTe compositions may be obtained, so that the effective band gap of the device can be selected at will. Moreover, no surface damage is caused by this technique.
    • 通过在CdTe衬底上沉积HgTe,然后用比器件的期望工作波长(带隙等效波长)长的红外光从底面照射衬底,在CdTe衬底上产生HgCdTe膜。 由于CdTe在红外线中是透明的,所以光将到达HgTe / CdTe界面。 由于HgTe是红外线中的吸收剂,大部分红外辐射将被吸附在界面附近,这将导致强烈的局部加热,从而加速HgTe和CdTe的相互扩散。 这种相互扩散将具有将接口从原始位置移动到电影/空中接口的效果。 由于所需的最终产物HgCdTe组合物对于所应用的红外辐射将是透明的,因此该过程本质上是自限制的。 通过适当选择应用的红外波长,可以获得不同比例的HgCdTe组合物,从而可以随意选择器件的有效带隙。 此外,这种技术不会造成表面损伤。