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    • 4. 发明申请
    • Closed region defect detection system
    • 闭区缺陷检测系统
    • US20070035727A1
    • 2007-02-15
    • US11584714
    • 2006-10-19
    • George ChenLih-Huah YiinYu Cao
    • George ChenLih-Huah YiinYu Cao
    • G01N21/88
    • G01N21/9501G01N21/956
    • A method and apparatus for inspecting specimens or patterned transmissive substrates, such as photomasks, for unwanted particles and features, particularly those associated with contacts, including irregularly shaped contacts. A specimen is illuminated by a laser through an optical system comprised of a laser scanning system, individual transmitted and/or reflected light collection optics and detectors collect and generate signals representative of the light transmitted by the substrate. The defect identification of the substrate is performed using those transmitted light signals. Defect identification is performed using an inspection algorithm by comparing image feature representations of a test specimen with a reference specimen, and using a boundary computer and flux comparison device to establish tight boundaries around contacts and compute flux differences between the test and reference specimen contacts. Defect sizes are reported as ratio of flux difference, and entire contacts are highlighted for review.
    • 用于检查样品或图案化的透射基底(例如光掩模)的方法和装置,用于不期望的颗粒和特征,特别是与触点相关联的那些,包括不规则形状的触点。 通过由激光扫描系统,单独发射和/或反射光收集光学器件组成的光学系统,激光照射样品,并且检测器收集并产生表示由衬底透射的光的信号。 使用这些透射光信号进行衬底的缺陷识别。 通过比较测试样本的图像特征表示和参考样本,并使用边界计算机和通量比较装置在接触周围建立紧密的边界并计算测试和参考样本接触之间的通量差,使用检查算法执行缺陷识别。 缺陷尺寸报告为通量差的比率,并且整个触点被突出显示以供审查。
    • 5. 发明授权
    • Visualization of photomask databases
    • 光掩模数据库的可视化
    • US07167185B1
    • 2007-01-23
    • US10396228
    • 2003-03-24
    • Lih-Huah YiinYen-Wen LuGeorge Q. Chen
    • Lih-Huah YiinYen-Wen LuGeorge Q. Chen
    • G09G5/02
    • G03F1/84G06T7/0004G06T2207/30148
    • Faster and more accurate techniques for displaying images are described. The techniques can be applied in various applications that include semiconductor fabrication processes. The invention uses preprocessed images to generate a user-selected image in order to increase the speed of image processing. The invention displays the pixels forming an image using grayscale shading in order to improve the accuracy of displaying the patterns used in photolithography processes. The techniques of the present invention can be used to display images that represent lithography patterns stored within memory devices or to display images captured by inspection or metrology devices.
    • 描述更快更准确的显示图像的技术。 这些技术可以应用于包括半导体制造工艺的各种应用中。 本发明使用预处理图像来生成用户选择的图像,以便提高图像处理的速度。 本发明使用灰度阴影显示形成图像的像素,以便提高显示在光刻工艺中使用的图案的精度。 本发明的技术可以用于显示表示存储在存储器件内的光刻图案的图像,或者显示由检查或计量装置捕获的图像。
    • 6. 发明授权
    • Closed region defect detection system
    • 闭区缺陷检测系统
    • US07499156B2
    • 2009-03-03
    • US11584714
    • 2006-10-19
    • George Q. ChenLih-Huah YiinYu Cao
    • George Q. ChenLih-Huah YiinYu Cao
    • G01N21/00
    • G01N21/9501G01N21/956
    • A method and apparatus for inspecting specimens or patterned transmissive substrates, such as photomasks, for unwanted particles and features, particularly those associated with contacts, including irregularly shaped contacts. A specimen is illuminated by a laser through an optical system comprised of a laser scanning system, individual transmitted and/or reflected light collection optics and detectors collect and generate signals representative of the light transmitted by the substrate. The defect identification of the substrate is performed using those transmitted light signals. Defect identification is performed using an inspection algorithm by comparing image feature representations of a test specimen with a reference specimen, and using a boundary computer and flux comparison device to establish tight boundaries around contacts and compute flux differences between the test and reference specimen contacts. Defect sizes are reported as ratio of flux difference, and entire contacts are highlighted for review.
    • 用于检查样品或图案化的透射基底(例如光掩模)的方法和装置,用于不期望的颗粒和特征,特别是与触点相关联的那些,包括不规则形状的触点。 通过由激光扫描系统,单独发射和/或反射光收集光学器件组成的光学系统,激光照射样品,并且检测器收集并产生表示由衬底透射的光的信号。 使用这些透射光信号进行衬底的缺陷识别。 通过比较测试样本的图像特征表示和参考样本,并使用边界计算机和通量比较装置在接触周围建立紧密的边界并计算测试和参考样本接触之间的通量差,使用检查算法执行缺陷识别。 缺陷尺寸报告为通量差的比率,并且整个触点被突出显示以供审查。
    • 9. 发明授权
    • Method for detecting lithographically significant defects on reticles
    • 在光罩上检测光刻显着缺陷的方法
    • US07873204B2
    • 2011-01-18
    • US11622432
    • 2007-01-11
    • Mark J. WihlYalin XiongLih-Huah Yiin
    • Mark J. WihlYalin XiongLih-Huah Yiin
    • G06K9/00
    • G03F1/84
    • A method for identifying lithographically significant defects. A photomask is illuminated to produce images that experience different parameters of the reticle as imaged by an inspection tool. Example parameters include a transmission intensity image and a reflection intensity image. The images are processed together to recover a band limited mask pattern associated with the photomask. A model of an exposure lithography system for chip fabrication is adapted to accommodate the band limited mask pattern as an input which is input into the model to obtain an aerial image of the mask pattern that is processed with a photoresist model yielding a resist-modeled image. The resist-modeled image is used to determine if the photomask has lithographically significant defects.
    • 用于识别光刻显着缺陷的方法。 光掩模被照亮以产生经由检查工具成像的掩模版的不同参数的图像。 示例性参数包括传输强度图像和反射强度图像。 一起处理图像以恢复与光掩模相关联的带限制掩模图案。 用于芯片制造的曝光光刻系统的模型适于适应带限制掩模图案作为输入到输入到模型中以获得用光致抗蚀剂模型处理的掩模图案的空间图像,产生抗蚀剂建模图像 。 使用抗蚀剂建模的图像来确定光掩模是否具有光刻的显着缺陷。
    • 10. 发明申请
    • METHOD FOR DETECTING LITHOGRAPHICALLY SIGNIFICANT DEFECTS ON RETICLES
    • 用于检测反应物上的重要缺陷的方法
    • US20080170773A1
    • 2008-07-17
    • US11622432
    • 2007-01-11
    • Mark J. WihlYalin XiongLih-Huah Yiin
    • Mark J. WihlYalin XiongLih-Huah Yiin
    • G06K9/00
    • G03F1/84
    • A method for identifying lithographically significant defects. A photomask is illuminated to produce images that experience different parameters of the reticle as imaged by an inspection tool. Example parameters include a transmission intensity image and a reflection intensity image. The images are processed together to recover a band limited mask pattern associated with the photomask. A model of an exposure lithography system for chip fabrication is adapted to accommodate the band limited mask pattern as an input which is input into the model to obtain an aerial image of the mask pattern that is processed with a photoresist model yielding a resist-modeled image. The resist-modeled image is used to determine if the photomask has lithographically significant defects.
    • 用于识别光刻显着缺陷的方法。 光掩模被照亮以产生经由检查工具成像的掩模版的不同参数的图像。 示例性参数包括传输强度图像和反射强度图像。 一起处理图像以恢复与光掩模相关联的带限制掩模图案。 用于芯片制造的曝光光刻系统的模型适于适应带限制掩模图案作为输入到输入到模型中以获得用光致抗蚀剂模型处理的掩模图案的空间图像,产生抗蚀剂建模图像 。 使用抗蚀剂建模的图像来确定光掩模是否具有光刻显着的缺陷。