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1. 发明申请

US20070035727A1 Closed region defect detection system 有权
标题翻译：闭区缺陷检测系统
公开(公告)号：US20070035727A1
公开(公告)日：2007-02-15
申请号：US11584714
申请日：2006-10-19
申请人： George Chen , Lih-Huah Yiin , Yu Cao
发明人： George Chen , Lih-Huah Yiin , Yu Cao
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/956
摘要： A method and apparatus for inspecting specimens or patterned transmissive substrates, such as photomasks, for unwanted particles and features, particularly those associated with contacts, including irregularly shaped contacts. A specimen is illuminated by a laser through an optical system comprised of a laser scanning system, individual transmitted and/or reflected light collection optics and detectors collect and generate signals representative of the light transmitted by the substrate. The defect identification of the substrate is performed using those transmitted light signals. Defect identification is performed using an inspection algorithm by comparing image feature representations of a test specimen with a reference specimen, and using a boundary computer and flux comparison device to establish tight boundaries around contacts and compute flux differences between the test and reference specimen contacts. Defect sizes are reported as ratio of flux difference, and entire contacts are highlighted for review.
摘要翻译：用于检查样品或图案化的透射基底（例如光掩模）的方法和装置，用于不期望的颗粒和特征，特别是与触点相关联的那些，包括不规则形状的触点。通过由激光扫描系统，单独发射和/或反射光收集光学器件组成的光学系统，激光照射样品，并且检测器收集并产生表示由衬底透射的光的信号。使用这些透射光信号进行衬底的缺陷识别。通过比较测试样本的图像特征表示和参考样本，并使用边界计算机和通量比较装置在接触周围建立紧密的边界并计算测试和参考样本接触之间的通量差，使用检查算法执行缺陷识别。缺陷尺寸报告为通量差的比率，并且整个触点被突出显示以供审查。

2. 发明授权

US09252615B2 Automatic mobile device detector 有权
标题翻译：自动移动设备检测器
公开(公告)号：US09252615B2
公开(公告)日：2016-02-02
申请号：US13290953
申请日：2011-11-07
申请人： George Chen , Samuel Sentosa
发明人： George Chen , Samuel Sentosa
IPC分类号： H02J7/00
CPC分类号： H02J7/0044 , H02J7/0052 , H02J7/0055 , H02J2007/0062 , H02J2007/0096
摘要： Devices, methods and systems disclosed herein relate to a universal charger which provides a power supply for the charging of OMTP devices and non-OMTP devices based on whether an OMTP mobile communication device or a non-OMTP mobile communication device is connected. A power charging apparatus is provided for charging a mobile communication device. The power charging apparatus includes a connector for connecting to a charging port of the mobile communication device, and a controller coupled to the connector, the controller configured to determine whether the mobile communication device connected to the connector is a non-OMTP mobile communication device or an OMTP mobile communication device, the controller further configured to charge a non-OMTP mobile communication device when a non-OMTP mobile communication device is connected to the connector, and further configured to charge an OMTP mobile communication device when an OMTP mobile communication device is connected to the connector.
摘要翻译：本文公开的装置，方法和系统涉及通用充电器，其基于OMTP移动通信设备或非OMTP移动通信设备是否连接来为OMTP设备和非OMTP设备的计费提供电源。提供一种用于对移动通信设备进行充电的充电装置。所述充电装置包括用于连接到所述移动通信设备的充电端口的连接器和耦合到所述连接器的控制器，所述控制器被配置为确定连接到所述连接器的移动通信设备是否是非OMTP移动通信设备， OMTP移动通信设备，所述控制器还被配置为当非OMTP移动通信设备连接到所述连接器时对非OMTP移动通信设备收费，并且还被配置为当OMTP移动通信设备为连接到连接器。

3. 外观设计

USD704578S1 Capacitive touch sensor with a light emitting diode 有权
标题翻译：具有发光二极管的电容触摸传感器
公开(公告)号：USD704578S1
公开(公告)日：2014-05-13
申请号：US29432998
申请日：2012-09-24
申请人： George Chen , Samuel Sentosa , Soo Youn Park
设计人： George Chen , Samuel Sentosa , Soo Youn Park

4. 发明申请

US20130004382A1 APPARATUS FOR GENERATING OZONE WATER 审中-公开
标题翻译：用于生成臭氧水的装置
公开(公告)号：US20130004382A1
公开(公告)日：2013-01-03
申请号：US13522840
申请日：2011-01-18
申请人： George Chen
发明人： George Chen
IPC分类号： B01J19/12
CPC分类号： C02F1/78 , B01F3/04503 , B01F5/0415 , B01F5/043 , B01F5/0654 , B01F2003/04886
摘要： An ozone water manufacturing device is provided. The ozone water manufacturing device includes a mixer and an ozone generator. The mixer includes a water inlet, a water outlet pipe, a tapered pipe, an importing part and a mixing chamber, wherein the tapered pipe is disposed close to the water inlet, the mixing chamber is disposed close to the water outlet pipe, and the importing part is disposed between the mixing chamber and the tapered pipe. The ozone generator is coupled to the importing part. The mixer disclosed by the present invention can be used to avoid a loss of water pressure, enhance solubility of the ozone, and fully mix water with the ozone.
摘要翻译：提供臭氧水制造装置。臭氧水制造装置包括混合器和臭氧发生器。混合机包括进水口，出水管，锥形管，进口部分和混合室，其中锥形管靠近进水口设置，混合室靠近出水管设置，进口部分设置在混合室和锥形管之间。臭氧发生器耦合到进口部分。本发明公开的混合器可用于避免水压的损失，增强臭氧的溶解性，并充分混合水与臭氧。

5. 发明授权

US07834426B2 High-k dual dielectric stack 有权
标题翻译： High-k双电介质叠层
公开(公告)号：US07834426B2
公开(公告)日：2010-11-16
申请号：US11772030
申请日：2007-06-29
申请人： Jun-Fei Zheng , George Chen , Wilman Tsai
发明人： Jun-Fei Zheng , George Chen , Wilman Tsai
IPC分类号： H01L23/58
CPC分类号： H01L21/28264 , H01L29/20 , H01L29/513 , H01L29/517 , H01L29/518
摘要： The present invention discloses a method including: providing a Group III-V component semiconductor material; forming a first layer over a surface of the Group III-V component semiconductor material, the first layer to unpin a Fermi level at the surface; forming a second layer over the first layer, the second layer for scaling an equivalent oxide thickness (EOT); and annealing the first layer before or after forming the second layer to remove bulk trap defects in the first layer.
摘要翻译：本发明公开了一种方法，包括：提供III-V族元素半导体材料; 在所述III-V族组分半导体材料的表面上形成第一层，所述第一层在所述表面处于未熔化的费米能级; 在所述第一层上形成第二层，所述第二层用于缩放等效氧化物厚度（EOT）; 以及在形成所述第二层之前或之后对所述第一层进行退火以去除所述第一层中的体陷阱缺陷。

6. 发明申请

US20100099238A1 Laser-assisted chemical singulation of a wafer 有权
标题翻译：激光辅助化学切片晶片
公开(公告)号：US20100099238A1
公开(公告)日：2010-04-22
申请号：US12288627
申请日：2008-10-22
申请人： George Vakanas , George Chen , Yuval Greenzweig , Eric Li , Sergei Voronov
发明人： George Vakanas , George Chen , Yuval Greenzweig , Eric Li , Sergei Voronov
IPC分类号： H01L21/78 , B23K26/38
CPC分类号： B23K26/16 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： The present invention discloses an apparatus including: a laser beam directed at a wafer held by a chuck mounted on a stage inside a process chamber; a focusing mechanism for the laser beam; a steering mechanism for the laser beam; an optical scanning mechanism for the laser beam; a mechanical scanning system for the stage; an etch chemical induced by the laser beam to etch the wafer and form volatile byproducts; a gas feed line to dispense the etch chemical towards the wafer; and a gas exhaust line to remove any excess of the etch chemical and the volatile byproducts.
摘要翻译：本发明公开了一种装置，包括：激光束，其被引导到由安装在处理室内的台上的卡盘保持的晶片; 用于激光束的聚焦机构; 用于激光束的转向机构; 用于激光束的光学扫描机构; 用于舞台的机械扫描系统; 由激光束引起的刻蚀化学蚀刻以蚀刻晶片并形成挥发性副产物; 用于将蚀刻化学品分配给晶片的气体供给管线; 和排气管线，以除去任何过量的蚀刻化学品和挥发性副产物。

7. 发明申请

US20090004881A1 HYBRID HIGH-K GATE DIELECTRIC FILM 有权
标题翻译：混合高K栅介质膜
公开(公告)号：US20090004881A1
公开(公告)日：2009-01-01
申请号：US11772164
申请日：2007-06-30
申请人： George Chen
发明人： George Chen
IPC分类号： H01L21/469 , H01L29/78
CPC分类号： H01L21/022 , H01L21/02142 , H01L21/02175 , H01L21/02197 , H01L21/0228 , H01L21/28079 , H01L21/28088 , H01L21/28194 , H01L21/3141 , H01L21/31604 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/318 , H01L29/495 , H01L29/4966 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/66772
摘要： The present invention discloses a method of forming a gate dielectric film including: providing a channel region in a transistor, the channel region including multiple segments having different sizes, some of which belong to a first surface portion while others belong to a second surface portion wherein the first surface portion and the second surface portion are adjacent; forming a hybrid high-k gate dielectric film over the channel region including: forming a first dielectric material over the first surface portion, the first dielectric material having a sub-monolayer thickness; forming a second dielectric material over the second surface portion, the second dielectric material having a sub-monolayer thickness, and forming a third dielectric film over the first dielectric film and the second dielectric film wherein the third dielectric film is high-k.
摘要翻译：本发明公开了一种形成栅极电介质膜的方法，包括：在晶体管中提供沟道区域，沟道区域包括具有不同尺寸的多个区段，其中一些区域属于第一表面部分，而另一些属于第二表面部分，第一表面部分和第二表面部分相邻; 在所述沟道区域上形成混合的高k栅极电介质膜，包括：在所述第一表面部分上形成第一介电材料，所述第一介电材料具有亚单层厚度; 在所述第二表面部分上形成第二电介质材料，所述第二电介质材料具有亚单层厚度，并且在所述第一电介质膜和所述第二电介质膜上形成第三电介质膜，其中所述第三介电膜为高k。

8. 发明申请

US20090001525A1 HIGH-K DUAL DIELECTRIC STACK 有权
标题翻译：高K双电源堆叠
公开(公告)号：US20090001525A1
公开(公告)日：2009-01-01
申请号：US11772030
申请日：2007-06-29
申请人： Jun-Fei Zheng , George Chen , Wilman Tsai
发明人： Jun-Fei Zheng , George Chen , Wilman Tsai
IPC分类号： H01L21/469 , H01L23/58
CPC分类号： H01L21/28264 , H01L29/20 , H01L29/513 , H01L29/517 , H01L29/518
摘要： The present invention discloses a method including: providing a Group III-V component semiconductor material; forming a first layer over a surface of the Group III-V component semiconductor material, the first layer to unpin a Fermi level at the surface; forming a second layer over the first layer, the second layer for scaling an equivalent oxide thickness (EOT); and annealing the first layer before or after forming the second layer to remove bulk trap defects in the first layer.
摘要翻译：本发明公开了一种方法，包括：提供III-V族元素半导体材料; 在所述III-V族组分半导体材料的表面上形成第一层，所述第一层在所述表面处于未熔化的费米能级; 在所述第一层上形成第二层，所述第二层用于缩放等效氧化物厚度（EOT）; 以及在形成所述第二层之前或之后对所述第一层进行退火以去除所述第一层中的体陷阱缺陷。

9. 发明申请

US20080201117A1 DYNAMIC SAMPLING WITH EFFICIENT MODEL FOR OVERLAY 失效
标题翻译：动态采样与高效模型
公开(公告)号：US20080201117A1
公开(公告)日：2008-08-21
申请号：US11676258
申请日：2007-02-16
申请人： Alan Wong , Jeff Drautz , Joseph D. Shindler , Max Lau , George Chen
发明人： Alan Wong , Jeff Drautz , Joseph D. Shindler , Max Lau , George Chen
IPC分类号： G06F17/50
CPC分类号： G06F17/5009 , G06F2217/10 , G06F2217/12 , H01L22/20 , Y02P90/265
摘要： The present invention describes a method including: determining field-clustering scheme; selecting initial sample plan; establishing initial model of overlay, the initial model of overlay comprising components; and establishing efficient model of overlay from the initial model of overlay including: constructing matrices; identifying redundant components and eliminating the redundant components; and identifying highly-correlated components and determining whether to eliminate the highly-correlated components.
摘要翻译：本发明描述了一种方法，包括：确定场聚类方案; 选择初始样本计划; 建立覆盖的初始模型，包含组件的覆盖的初始模型; 并从覆盖的初始模型建立覆盖层的有效模型，包括：构造矩阵; 识别冗余组件并消除冗余组件; 并识别高度相关的组件并确定是否消除高度相关的组件。

10. 发明申请

US20080018783A1 Video importance rating based on compressed domain video features 有权
标题翻译：基于压缩域视频功能的视频重要性评级
公开(公告)号：US20080018783A1
公开(公告)日：2008-01-24
申请号：US11476114
申请日：2006-06-28
申请人： George Chen , Mohamed Kharmes Ben Hadj Miled , Asad Islam
发明人： George Chen , Mohamed Kharmes Ben Hadj Miled , Asad Islam
IPC分类号： H04N11/04
CPC分类号： G06K9/00711 , G06K9/4642 , G06K2009/00738 , G06T7/223 , H04N19/48 , H04N19/85
摘要： Systems and methods are provided for identifying important video frames and segments in multimedia content such as a segmented compressed domain video. Video frames in a segment are analyzed to determine intensity, contrast, and motion values for the frames and their segments. The values among frames and segments are compared to identify one or more video segments likely to be important to a viewer. The systems and methods may additionally be augmented with audio data other characteristics associated with the video frames and segments analyzed.
摘要翻译：提供系统和方法用于识别多媒体内容中的重要视频帧和段，例如分段压缩域视频。分析段中的视频帧以确定帧及其段的强度，对比度和运动值。比较帧和片段之间的值以识别可能对观看者重要的一个或多个视频片段。系统和方法可另外增加音频数据与视频帧和分析的片段相关联的其他特征。

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