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1. 发明授权

US06232228B1 Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method 失效
标题翻译：制造半导体器件的方法，用于制造半导体器件的蚀刻组合物以及使用该方法制造的半导体器件
公开(公告)号：US06232228B1
公开(公告)日：2001-05-15
申请号：US09325389
申请日：1999-06-04
申请人： Gyu-hwan Kwag , Se-jong Ko , Kyung-seuk Hwang , Jun-ing Gil , Sang-o Park , Dae-hoon Kim , Sang-moon Chon , Ho-Kyoon Chung
发明人： Gyu-hwan Kwag , Se-jong Ko , Kyung-seuk Hwang , Jun-ing Gil , Sang-o Park , Dae-hoon Kim , Sang-moon Chon , Ho-Kyoon Chung
IPC分类号： H01L2144
CPC分类号： C09K13/04 , H01L21/3212 , H01L21/7684
摘要： A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer. The etching composition includes at least one oxidant selected from H2O2, O2, IO4−, BrO3, ClO3, S2O8−, KIO3, H5IO6, KOH and HNO3, at least enhancer selected from HF, NH4OH, H3PO4, H2SO4, NH4F and HCl, and a buffer solution, mixed together in certain amounts.
摘要翻译：提供一种制造半导体器件的方法，包括形成导电插塞并使层间绝缘层的阶梯高度最小化。还提供了用于这种制造方法的蚀刻组合物。制造半导体器件的方法包括以下步骤：在半导体衬底上形成绝缘层，在绝缘层中形成接触孔，在绝缘层上形成导电层以埋入接触孔，旋转半导体衬底，并蚀刻导电通过在旋转半导体衬底上提供蚀刻组合物，并且使用蚀刻组合物旋转蚀刻钨层，使得导电层仅保留在接触孔内部，并且不保留在绝缘层上。蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少选自HF，NH 4 OH，H 3 PO 4，H 2 SO 4，NH 4 F和HCl的增强剂，缓冲溶液，以一定量混合在一起。

2. 发明授权

US06197150B1 Apparatus for wafer treatment for the manufacture of semiconductor devices 失效
标题翻译：用于制造半导体器件的晶片处理装置
公开(公告)号：US06197150B1
公开(公告)日：2001-03-06
申请号：US09320139
申请日：1999-05-26
申请人： Gyu-hwan Kwag , Kyung-seuk Hwang
发明人： Gyu-hwan Kwag , Kyung-seuk Hwang
IPC分类号： H01L2100
CPC分类号： H01L21/67017 , H01L21/67023
摘要： An apparatus is provided for wafer treatment during the manufacture of semiconductor devices. The apparatus for wafer treatment includes a shaft, a chuck supported by the shaft for holding a wafer to be treated, a solution nozzle for supplying a treatment solution for wafer treatment onto the wafer, a gas supplier for supplying a gas to the back side of the wafer, and a heater for heating the gas supplied to the back side of the wafer. The use of this apparatus improves the uniformity of a treatment process such as an etching process or a cleaning process by minimizing the temperature changes of the treatment solution supplied onto the wafer mounted on the spin chuck of the apparatus during the wafer treatment process.
摘要翻译：在半导体器件的制造期间提供用于晶片处理的装置。用于晶片处理的装置包括轴，用于保持待处理的晶片的轴支撑的卡盘，用于将晶片处理的处理溶液供应到晶片上的溶液喷嘴，用于向晶片的背面供应气体的气体供应器晶片和用于加热供应到晶片背面的气体的加热器。该设备的使用通过最小化在晶片处理过程中将安装在装置的旋转卡盘上的晶片上的处理溶液的温度变化降至最低，从而提高了诸如蚀刻工艺或清洗工艺的处理过程的均匀性。

3. 发明申请

US20060130871A1 Megasonic cleaner having double cleaning probe and cleaning method 审中-公开
标题翻译：超声波清洗机具有双重清洁探头和清洁方法
公开(公告)号：US20060130871A1
公开(公告)日：2006-06-22
申请号：US11268285
申请日：2005-11-04
申请人： Kyung-Seuk Hwang , Sun-Yong Lee , Dong-Chul Heo
发明人： Kyung-Seuk Hwang , Sun-Yong Lee , Dong-Chul Heo
IPC分类号： B08B3/12 , C23G1/00 , B08B7/00 , B08B3/00
CPC分类号： H01L21/67051 , B08B3/12
摘要： A megasonic cleaner includes a rotatable wafer supporting member for supporting a wafer; a cleaning solution supply member for supplying a cleaning solution to a wafer placed on the wafer supporting member; at least two vibration transfer members for agitating cleaning solutions supplied to different areas of the wafer placed on the wafer supporting member; and a vibration generating member for oscillating the at least two vibration transfer members. The cleaner has at least two quartz rods for transferring oscillation energy. Using the quartz rods, oscillation energy is transferred to respective areas of a wafer to clean the wafer. Thus, a difference between cleaning efficiencies of wafer edge and center is reduced or substantially eliminated to achieve a uniform cleaning efficiency on an entire surface of the wafer.
摘要翻译：兆声波清洗器包括用于支撑晶片的可旋转晶片支撑构件; 清洁溶液供给构件，用于将清洁溶液供给到放置在晶片支撑构件上的晶片; 至少两个振动传递构件，用于搅拌提供给放置在晶片支撑构件上的晶片的不同区域的清洁溶液; 以及用于振荡所述至少两个振动传递构件的振动产生构件。清洁器至少有两个用于传递振荡能量的石英棒。使用石英棒，将振荡能量转移到晶片的相应区域以清洁晶片。因此，晶片边缘和中心的清洁效率之间的差异被减小或基本消除，以在晶片的整个表面上实现均匀的清洁效率。

4. 发明授权

US06200414B1 Circulation system for supplying chemical for manufacturing semiconductor devices and circulating method thereof 有权
标题翻译：用于制造半导体器件的化学品的循环系统及其循环方法
公开(公告)号：US06200414B1
公开(公告)日：2001-03-13
申请号：US09294362
申请日：1999-04-20
申请人： Kyung-seuk Hwang , Gyu-hwan Kwag , Young-hwan Yun
发明人： Kyung-seuk Hwang , Gyu-hwan Kwag , Young-hwan Yun
IPC分类号： C23F102
CPC分类号： B24B37/015 , B24B57/02 , H01L21/6708
摘要： A circulation system for supplying one or more chemicals, or mixtures thereof, includes a chemical tank containing the chemical. A chemical supply line is connected at one end to the chemical tank, through which the chemical from the chemical tank is supplied to one of a processing section, for performing a specific semiconductor device fabrication process, and a bypass section, for collecting the chemical while the processing section is idle. A supply nozzle, connected to another end of the chemical supply line, is movable between the processing section and the bypass section, such that the supply nozzle is selectively oriented above one of the processing section and the bypass section. A primary chemical re-circulation line connects the processing section and the chemical tank, and a chemical bypass line connects the bypass section and a portion of the primary chemical re-circulation line.
摘要翻译：用于供应一种或多种化学品或其混合物的循环系统包括含有该化学品的化学罐。化学品供应管线一端连接到化学罐，化学罐的化学物质通过该药液供应给处理部分之一，用于执行特定的半导体器件制造工艺，旁路部分用于收集化学品，同时处理部分空闲。连接到化学供应管线的另一端的供应喷嘴可在处理部分和旁路部分之间移动，使得供应喷嘴选择性地定向在处理部分和旁路部分之一上。主要化学品循环管线连接处理部分和化学罐，化学旁路管线连接旁路部分和主要化学品再循环管线的一部分。

5. 发明授权

US06742281B2 Apparatus for drying semiconductor wafer using vapor dry method 失效
标题翻译：使用蒸汽干燥法干燥半导体晶片的设备
公开(公告)号：US06742281B2
公开(公告)日：2004-06-01
申请号：US10382350
申请日：2003-03-04
申请人： Myung-Hwan Shin , Man-Young Lee , Kyung-Seuk Hwang
发明人： Myung-Hwan Shin , Man-Young Lee , Kyung-Seuk Hwang
IPC分类号： F26B308
CPC分类号： H01L21/67034
摘要： A semiconductor wafer drying apparatus is provided. In one embodiment, this apparatus includes a bath which can contain much deionized water so that semiconductor wafers soak in the deionized water; a chamber providing a space where vapor flows over the bath; a vapor supply line supplying vapor to the internal space of the chamber; an exhaust line discharging vapor contained in the chamber; a deionized water exhaust line discharging deionized water in the bath; a semiconductor wafer holder supporting the semiconductor wafer in the bath; and pitch guides placed at left and right sides of the semiconductor wafer, movable to a first position and a second position in a vertical direction, wherein the pitch guides are separated from the semiconductor wafer at the first position and contact the semiconductor wafer at the second position thus preventing the movement of the semiconductor wafer.
摘要翻译：提供半导体晶片干燥装置。在一个实施例中，该装置包括可以含有大量去离子水的浴，使得半导体晶片浸泡在去离子水中; 一个提供蒸气在浴缸上流动的空间的室; 蒸汽供应管线，供应蒸气到室的内部空间; 排出管，其排出容纳在所述室内的蒸气; 去离子水排出管线在浴中排放去离子水; 半导体晶片保持器，其将所述半导体晶片支撑在所述槽中; 以及设置在半导体晶片的左侧和右侧的俯仰引导件，其可在第一位置处移动到第一位置和第二位置，其中所述俯仰引导件在第一位置处与半导体晶片分离并且在第二位置处接触半导体晶片从而防止半导体晶片的移动。

6. 发明授权

US06436809B1 Method of manufacturing semiconductor devices, etching compositions for manufacturing semiconductor devices, and semiconductor devices made using this method 失效
标题翻译：制造半导体器件的方法，用于制造半导体器件的蚀刻组合物以及使用该方法制造的半导体器件
公开(公告)号：US06436809B1
公开(公告)日：2002-08-20
申请号：US09645615
申请日：2000-08-25
申请人： Gyu-hwan Kwag , Se-jong Ko , Kyung-seuk Hwang , Jun-ing Gil , Sang-o Park , Dae-hoon Kim , Sang-moon Chon , Ho-Kyoon Chung
发明人： Gyu-hwan Kwag , Se-jong Ko , Kyung-seuk Hwang , Jun-ing Gil , Sang-o Park , Dae-hoon Kim , Sang-moon Chon , Ho-Kyoon Chung
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , C09K13/04 , H01L21/3212 , Y10S438/981
摘要： A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H2O2, O2, IO4−, BrO3, ClO3, S2O8−, KlO3, H5IO6, KOH, and HNO3, at least one enhancer selected from the group comprising HF, NH4OH, H3PO4, H2SO4, and HCl, and a buffer solution formed by mixing them at certain rates.
摘要翻译：提供一种制造半导体器件的方法，用于形成钨插塞或多晶硅插塞，并使中间绝缘层的阶梯高度最小化。还提供了用于该工艺的蚀刻组合物，与通过该工艺制造的半导体器件一样。制造半导体器件的方法包括以下步骤：在绝缘层上形成具有一定厚度的钨膜，并且在构成特定半导体结构的绝缘层中形成的埋入接触孔，并使用一定的蚀刻组合物旋转蚀刻钨膜钨膜仅存在于不存在于绝缘膜上的接触孔内。蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少一种选自HF，NH 4 OH，H 3 PO 4 ，H 2 SO 4和HCl，以及通过以一定速率混合形成的缓冲溶液。

7. 发明申请

US20070157957A1 Substrate transfer robot and apparatus having the substrate transfer robot for cleaning a substrate 审中-公开
标题翻译：具有用于清洗基板的基板传送机器人的基板传送机器人和设备
公开(公告)号：US20070157957A1
公开(公告)日：2007-07-12
申请号：US11649485
申请日：2007-01-04
申请人： Duk-Lyol Lee , Mo-Hyun Cho , Dong-chul Heo , Kyung-Seuk Hwang
发明人： Duk-Lyol Lee , Mo-Hyun Cho , Dong-chul Heo , Kyung-Seuk Hwang
IPC分类号： B08B3/00 , B65H1/00 , C23F1/00
CPC分类号： H01L21/67778 , H01L21/67051 , H01L21/67288 , H01L21/67748
摘要： In a substrate transfer robot and a substrate cleaning apparatus, the substrate transfer robot transfers substrates between a container supported by a load port and a processing module for cleaning the substrates. The substrate transfer robot includes a driving member that provides a driving force to transfer the substrates, a blade that transfers the substrates using the driving force, and a sensor that senses impurities existing on the blade. When the impurities are detected, a controller can control the operation of the driving member. Thus, the contamination of other substrates in the container can be effectively prevented.
摘要翻译：在基板传送机器人和基板清洁装置中，基板传送机器人在由负载端口支撑的容器和用于清洁基板的处理模块之间传送基板。衬底传送机器人包括提供驱动力以传送衬底的驱动构件，使用驱动力传送衬底的刀片和感测存在于刀片上的杂质的传感器。当检测到杂质时，控制器可以控制驱动构件的操作。因此，能够有效地防止容器内的其他基板的污染。

8. 发明授权

US5901716A Wafer cleaning apparatus with rotating cleaning solution injection nozzles 失效
标题翻译：带旋转清洗液注射嘴的晶圆清洗设备
公开(公告)号：US5901716A
公开(公告)日：1999-05-11
申请号：US768709
申请日：1996-12-18
申请人： Kyung-Seuk Hwang , Jun-Kyu Lee
发明人： Kyung-Seuk Hwang , Jun-Kyu Lee
IPC分类号： B05B3/14 , B08B3/02 , H01L21/00 , H01L21/304
CPC分类号： H01L21/67057 , B05B3/14 , B08B3/02 , H01L21/67051 , Y10S134/902
摘要： A wafer cleaning apparatus includes at least one nozzle fixing tube disposed in a wall of a cleaning bath. A plurality of injection nozzles are arranged on the nozzle fixing tube for spraying a compressed cleaning solution toward the wafer. A rotating device rotates the at least one nozzle fixing tube and the plurality of injection nozzles within a predetermined angle.
摘要翻译：晶片清洁装置包括设置在清洗槽的壁中的至少一个喷嘴固定管。在喷嘴固定管上设置有多个喷嘴，用于将压缩的清洗溶液喷射到晶片上。旋转装置使至少一个喷嘴固定管和多个喷嘴在预定角度内旋转。

9. 发明申请

US20080041430A1 Cleaning solution spraying unit and wafer cleaning apparatus with the same 审中-公开
标题翻译：清洗液喷雾装置及晶圆清洗装置
公开(公告)号：US20080041430A1
公开(公告)日：2008-02-21
申请号：US11894543
申请日：2007-08-21
申请人： Mo-Hyun Cho , Duk-Lyol Lee , Kyung-Seuk Hwang , Dong-Chul Hur
发明人： Mo-Hyun Cho , Duk-Lyol Lee , Kyung-Seuk Hwang , Dong-Chul Hur
IPC分类号： B08B3/02
CPC分类号： B08B3/024 , H01L21/67051
摘要： There is provided a cleaning solution spraying unit. The cleaning solution spraying unit comprises a number of nozzles installed in a nozzle base, along a top surface of a wafer, and radially spraying a cleaning solution on the wafer, wherein the nozzle base is positioned above the wafer; and a power unit rotating the nozzles at a predetermined angle relative to a line extending perpendicularly from the top surface of the wafer. In addition, provided is a wafer cleaning apparatus including the cleaning solution spraying unit with the above-described constitution.
摘要翻译：提供了清洗溶液喷涂单元。清洗溶液喷涂单元包括沿着晶片顶表面安装在喷嘴基座中的多个喷嘴，并且在晶片上径向喷射清洁溶液，其中喷嘴基座位于晶片上方; 以及功率单元，其相对于从晶片的顶表面垂直延伸的线以预定角度旋转喷嘴。此外，提供了一种包括具有上述结构的清洁溶液喷射单元的晶片清洁设备。

10. 发明授权

US06232239B1 Method for cleaning contact holes in a semiconductor device 失效
标题翻译：用于清洁半导体器件中的接触孔的方法
公开(公告)号：US06232239B1
公开(公告)日：2001-05-15
申请号：US09141207
申请日：1998-08-26
申请人： Kwang-shin Lim , Eun-a Kim , Sang-o Park , Kyung-seuk Hwang
发明人： Kwang-shin Lim , Eun-a Kim , Sang-o Park , Kyung-seuk Hwang
IPC分类号： H01L21338
CPC分类号： H01L21/76804 , H01L21/02063 , H01L21/31111 , H01L21/76814 , Y10S438/906 , Y10S438/963
摘要： A method for removing impurities and deposits formed in a contact hole of a semiconductor device. The method comprises the step of bathing the semiconductor device in a solution having concentrations of between about 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2 to 4 weight percent of H2O2, 0.05 to 0.25 weight percent of HF, and the remaining percent of deionized water. Such bathing is preferably carried out with the solution maintained at a constant temperature of between about 20 to 25° C. for about 1 to 5 minutes.
摘要翻译：一种去除形成在半导体器件的接触孔中的杂质和沉积物的方法。该方法包括将半导体器件洗涤在浓度为约25至35重量％的异丙醇（IPA），2至4重量％的H 2 O 2，0.05至0.25重量百分比的HF和其余百分比的溶液中的溶液的步骤的去离子水。这种洗浴优选在溶液保持在约20至25℃的恒定温度下进行约1至5分钟。

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