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1. 发明申请

US20060130871A1 Megasonic cleaner having double cleaning probe and cleaning method 审中-公开
标题翻译：超声波清洗机具有双重清洁探头和清洁方法
公开(公告)号：US20060130871A1
公开(公告)日：2006-06-22
申请号：US11268285
申请日：2005-11-04
申请人： Kyung-Seuk Hwang , Sun-Yong Lee , Dong-Chul Heo
发明人： Kyung-Seuk Hwang , Sun-Yong Lee , Dong-Chul Heo
IPC分类号： B08B3/12 , C23G1/00 , B08B7/00 , B08B3/00
CPC分类号： H01L21/67051 , B08B3/12
摘要： A megasonic cleaner includes a rotatable wafer supporting member for supporting a wafer; a cleaning solution supply member for supplying a cleaning solution to a wafer placed on the wafer supporting member; at least two vibration transfer members for agitating cleaning solutions supplied to different areas of the wafer placed on the wafer supporting member; and a vibration generating member for oscillating the at least two vibration transfer members. The cleaner has at least two quartz rods for transferring oscillation energy. Using the quartz rods, oscillation energy is transferred to respective areas of a wafer to clean the wafer. Thus, a difference between cleaning efficiencies of wafer edge and center is reduced or substantially eliminated to achieve a uniform cleaning efficiency on an entire surface of the wafer.
摘要翻译：兆声波清洗器包括用于支撑晶片的可旋转晶片支撑构件; 清洁溶液供给构件，用于将清洁溶液供给到放置在晶片支撑构件上的晶片; 至少两个振动传递构件，用于搅拌提供给放置在晶片支撑构件上的晶片的不同区域的清洁溶液; 以及用于振荡所述至少两个振动传递构件的振动产生构件。清洁器至少有两个用于传递振荡能量的石英棒。使用石英棒，将振荡能量转移到晶片的相应区域以清洁晶片。因此，晶片边缘和中心的清洁效率之间的差异被减小或基本消除，以在晶片的整个表面上实现均匀的清洁效率。

2. 发明申请

US20060096622A1 Dry cleaning apparatus used to manufacture semiconductor devices 审中-公开
标题翻译：用于制造半导体器件的干洗设备
公开(公告)号：US20060096622A1
公开(公告)日：2006-05-11
申请号：US11272414
申请日：2005-11-10
申请人： Sang-Eon Lee , Sun-Yong Lee , Sang-Rok Hah , Dong-Chul Heo
发明人： Sang-Eon Lee , Sun-Yong Lee , Sang-Rok Hah , Dong-Chul Heo
IPC分类号： B08B3/00
CPC分类号： B08B5/02 , B08B7/0042 , B08B15/02 , H01L21/67017 , H01L21/67028
摘要： A dry cleaning apparatus for cleaning a surface of a semiconductor substrate comprises a chamber comprising a first wall and a second wall, a supporting member including a wafer receiving surface, a cleaning member for removing particles from the surface of the substrate placed on the supporting member, and a carrier gas supplying member for supplying a carrier gas and for transporting the particles separated from the surface of the substrate to the outside of the chamber, wherein the first wall of the chamber including a first portion disposed to face the wafer receiving surface and a second portion formed adjacent to the first portion and disposed to receive a part of the carrier gas supplying member.
摘要翻译：一种用于清洁半导体衬底的表面的干洗设备，包括：一个包括一个第一壁和一个第二壁的腔室，一个包括一个晶片接收表面的支撑构件，一个用于从放置在支撑构件上的衬底表面去除颗粒的清洁构件以及用于供给载气并将从基板的表面分离的颗粒输送到室的外部的载气供给部件，其中，所述室的第一壁包括设置成面对晶片接收表面的第一部分和第二部分，其形成在与第一部分相邻并且设置成容纳载气供应部件的一部分。

3. 发明申请

US20100181250A1 AMINE AQUEOUS SOLUTION FOR FORMING AN ACTIVE LAYER OF POLYAMIDE REVERSE OSMOSIS COMPOSITE MEMBRANE, POLYAMIDE REVERSE OSMOSIS COMPOSITE MEMBRANE PREPARED THEREBY, AND PREPARATION METHOD THEREOF 审中-公开
标题翻译：用于形成聚酰胺反转复合膜的活性层的胺水溶液，其制备的聚酰胺反式OSMOSIS复合膜及其制备方法
公开(公告)号：US20100181250A1
公开(公告)日：2010-07-22
申请号：US12440216
申请日：2007-08-24
申请人： Youn-Kook Kim , Sun-Yong Lee
发明人： Youn-Kook Kim , Sun-Yong Lee
IPC分类号： B01D71/56 , B05D1/18 , B01D67/00 , C08G69/00
CPC分类号： B01D71/56 , B01D61/025 , B01D67/0006 , B01D67/0083 , B01D67/0093 , B01D67/0095 , B01D69/125 , B01D2323/12 , B01D2323/30 , B01D2323/40 , C08G69/00
摘要： Disclosed are an amine aqueous solution for forming an active layer of a polyamide reverse osmosis composite membrane and a preparation method of the polyamide reverse osmosis composite membrane using the same. The amine aqueous solution comprises 0.1 to 20 wt % of a polyfunctional amine compound, 0.1 to 20 wt % of an alcohol amine compound, 0.1 to 20 wt % of a tertiary amine compound, and 40 to 99.7 wt % of water. Due to using an amine aqueous solution having an alcohol amine and a tertiary amine compound, the polyamide reverse osmosis composite membrane has high water permeability and enhanced salt rejection rate, and thus is useful for the membrane field.
摘要翻译：公开了用于形成聚酰胺反渗透复合膜的活性层的胺水溶液和使用其的聚酰胺反渗透复合膜的制备方法。胺水溶液含有0.1〜20重量％的多官能胺化合物，0.1〜20重量％的醇胺化合物，0.1〜20重量％的叔胺化合物和40〜99.7重量％的水。由于使用具有醇胺和叔胺化合物的胺水溶液，所以聚酰胺反渗透复合膜具有高透水性和提高的耐盐析率，因此可用于膜场。

4. 发明授权

US07598296B2 Preparation method of polyamide thin film composite reverse osmosis membrane and polyamide thin film composite reverse osmosis membrane prepared therefrom 有权
标题翻译：聚酰胺薄膜复合反渗透膜及其制备的聚酰胺薄膜复合反渗透膜的制备方法
公开(公告)号：US07598296B2
公开(公告)日：2009-10-06
申请号：US10586520
申请日：2005-12-26
申请人： Je-Kang Yoo , Sun-Yong Lee , Youn-Kook Kim
发明人： Je-Kang Yoo , Sun-Yong Lee , Youn-Kook Kim
IPC分类号： C08J5/20
CPC分类号： B01D69/125 , B01D61/025 , B01D67/0093 , B01D67/0095 , B01D71/56 , Y02A20/131
摘要： A preparation method of a polyamide thin film composite reverse osmosis membrane and a polyamide thin film composite reverse osmosis membrane prepared using the preparation method are provided. The preparation method of a polyamide thin film composite reverse osmosis membrane using interfacial polymerization of an amine aqueous solution and amine-reactive compound includes the steps of (a) forming an active layer through interfacial polymerization by contacting a surface of a porous support with an amine aqueous solution containing a polyfunctional aromatic amine monomer and an organic solution containing polyfunctional acyl halide monomer as an amine-reactive compound, and (b) performing post-treatment preceded by the forming of the active layer by contacting the active layer with an aqueous solution containing 0.1 to 100 wt % of polyfunctional tertiary alcohol amine. The polyamide thin film composite reverse osmosis membrane prepared by using the polyfunctional tertiary alcohol amine as a post-treatment compound has improved water permeability and salt rejection compared to a case of using various post-treatment agents or methods.
摘要翻译：提供了使用该制备方法制备的聚酰胺薄膜复合反渗透膜和聚酰胺薄膜复合反渗透膜的制备方法。使用胺水溶液和胺反应性化合物的界面聚合的聚酰胺薄膜复合反渗透膜的制备方法包括以下步骤：（a）通过界面聚合形成活性层，通过使多孔载体的表面与胺含有多官能芳族胺单体的水溶液和含有多官能酰卤单体作为胺反应性化合物的有机溶液，和（b）在活性层形成之前进行后处理，所述活性层通过使活性层与含有 0.1〜100重量％的多官能叔胺胺。通过使用多官能叔醇胺作为后处理化合物制备的聚酰胺薄膜复合反渗透膜与使用各种后处理剂或方法的情况相比，具有改善的透水性和耐盐析性。

5. 发明授权

US08506807B2 Spiral wound type filter cartridge 有权
标题翻译：螺旋卷绕式滤芯
公开(公告)号：US08506807B2
公开(公告)日：2013-08-13
申请号：US12991840
申请日：2008-12-18
申请人： Sun-Yong Lee , Doo-Won Han , Youn-Kook Kim , Hyoung-Jun Ahn , Eu-Jean Moon , Suk-Young Lee
发明人： Sun-Yong Lee , Doo-Won Han , Youn-Kook Kim , Hyoung-Jun Ahn , Eu-Jean Moon , Suk-Young Lee
IPC分类号： B01D63/10 , B01D27/00 , B01D24/00
CPC分类号： C02F1/004 , B01D63/10 , B01D63/103 , B01D2311/2626 , B01D2313/14 , B01D2313/40 , B01D2325/48
摘要： Disclosed herein is a spiral wound type filter cartridge and more specifically, a spiral wound type filter cartridge in which activated carbon fiber is provided. The inside of spiral wound type filter cartridge is capable of serving as a carbon filter in a water purifier, thus eliminating the necessity of the use of any carbon filter for pre- or post-treatment in the process of purifying raw water, reducing an overall size of the water purifier and considerably reducing costs associated therewith.
摘要翻译：本文公开了一种螺旋缠绕式过滤器滤芯，更具体地说，提供了活性碳纤维的螺旋卷绕式过滤器滤芯。螺旋缠绕式过滤器滤芯的内部能够在净水器中作为碳过滤器，因此在净化原水的过程中不需要使用任何碳过滤器进行前处理或后处理，从而减少总体净水器的尺寸并大大降低与之相关的成本。

6. 发明授权

US07766173B2 Polyamide reverse osmosis composite membrane and preparation method thereof 有权
标题翻译：聚酰胺反渗透复合膜及其制备方法
公开(公告)号：US07766173B2
公开(公告)日：2010-08-03
申请号：US11996030
申请日：2005-08-24
申请人： Moo-Kyung Moon , Je-Kang Yoo , Sun-Yong Lee , Youn-Kook Kim , Hyoung-Jun Ahn , Doo-Won Han
发明人： Moo-Kyung Moon , Je-Kang Yoo , Sun-Yong Lee , Youn-Kook Kim , Hyoung-Jun Ahn , Doo-Won Han
IPC分类号： B01D39/00 , B01D39/14 , B01D61/00 , B01D11/00
CPC分类号： C08G69/26 , B01D61/025 , B01D67/0006 , B01D67/0083 , B01D67/0093 , B01D69/125 , B01D71/56 , B01D2323/12 , B01D2323/40 , C08G69/04 , C08G69/32
摘要： An amine aqueous solution for forming an active layer of a polyamide reverse osmosis composite membrane is prepared, which consists of 0.1 through 20 weight % of polyfunctional aromatic amine monomer, 0.1 through 20 weight % of multi-functional tertiary alcohol amine, 0.1 through 20 weight % of strong acid, and 40 through 99.7 weight % of water.
摘要翻译：制备用于形成聚酰胺反渗透复合膜活性层的胺水溶液，其由0.1至20重量％的多官能芳族胺单体，0.1至20重量％的多官能叔胺胺，0.1至20重量％强酸的百分比，以及40至99.7重量％的水。

7. 发明授权

US07398801B2 Apparatus and method for processing wafers 有权
标题翻译：用于处理晶片的装置和方法
公开(公告)号：US07398801B2
公开(公告)日：2008-07-15
申请号：US11292674
申请日：2005-12-02
申请人： Kun-Hyung Lee , Soo-Woong Lee , Hyun-Ho Cho , Hee-Sun Chae , Jae-Hyung Jung , Sun-Yong Lee
发明人： Kun-Hyung Lee , Soo-Woong Lee , Hyun-Ho Cho , Hee-Sun Chae , Jae-Hyung Jung , Sun-Yong Lee
IPC分类号： B65B1/20
CPC分类号： H01L21/67017 , H01L21/67772 , Y10S414/14
摘要： An apparatus and method for manufacturing semiconductor devices are disclosed. In accordance with the invention, a wafer transfer device for transferring wafers from wafer storage containers to wafer processing equipment includes a flow chamber designed to reduce the amount of contaminants that can enter the wafer container. The wafer transfer apparatus provide two gas inlets for allowing two gases to flow through the flow chamber of the transfer apparatus. This results in a reduced amount of contaminants able to enter the wafer container, which in turn results in manufacture of devices with more reliable performance characteristics as well as high manufacturing yield.
摘要翻译：公开了一种用于制造半导体器件的设备和方法。根据本发明，用于将晶片从晶片储存容器转移到晶片加工设备的晶片转移装置包括设计成减少可进入晶片容器的污染物量的流动室。晶片传送装置提供两个气体入口，用于允许两种气体流过传送装置的流动室。这导致能够进入晶片容器的污染物量减少，这进而导致具有更可靠的性能特征以及高制造产量的装置的制造。

8. 发明申请

US20060104750A1 Apparatus and method for processing wafers 有权
标题翻译：用于处理晶片的装置和方法
公开(公告)号：US20060104750A1
公开(公告)日：2006-05-18
申请号：US11292674
申请日：2005-12-02
申请人： Kun-Hyung Lee , Soo-Woong Lee , Hyun-Ho Cho , Hee-Sun Chae , Jae-Hyung Jung , Sun-Yong Lee
发明人： Kun-Hyung Lee , Soo-Woong Lee , Hyun-Ho Cho , Hee-Sun Chae , Jae-Hyung Jung , Sun-Yong Lee
IPC分类号： H01L21/677
CPC分类号： H01L21/67017 , H01L21/67772 , Y10S414/14
摘要： An apparatus and method for manufacturing semiconductor devices are disclosed. In accordance with the invention, a wafer transfer device for transferring wafers from wafer storage containers to wafer processing equipment includes a flow chamber designed to reduce the amount of contaminants that can enter the wafer container. The wafer transfer apparatus provide two gas inlets for allowing two gases to flow through the flow chamber of the transfer apparatus. This results in a reduced amount of contaminants able to enter the wafer container, which in turn results in manufacture of devices with more reliable performance characteristics as well as high manufacturing yield.
摘要翻译：公开了一种用于制造半导体器件的设备和方法。根据本发明，用于将晶片从晶片储存容器转移到晶片加工设备的晶片转移装置包括设计成减少可进入晶片容器的污染物量的流动室。晶片传送装置提供两个气体入口，用于允许两种气体流过传送装置的流动室。这导致能够进入晶片容器的污染物量减少，这进而导致具有更可靠的性能特征以及高制造产量的装置的制造。

9. 发明申请

US20050176225A1 Method of manufacturing electronic device capable of controlling threshold voltage and ion implanter controller and system that perform the method 有权
标题翻译：制造能够控制阈值电压的电子装置的方法和执行该方法的离子注入机控制器和系统
公开(公告)号：US20050176225A1
公开(公告)日：2005-08-11
申请号：US11053651
申请日：2005-02-07
申请人： Young-Ho Lee , Sun-Yong Lee , Doo-Heun Baek , Tae-Hoon Park
发明人： Young-Ho Lee , Sun-Yong Lee , Doo-Heun Baek , Tae-Hoon Park
IPC分类号： H01J37/317 , A61N5/00 , B05C11/00 , G01R31/26 , G21G5/00 , G21K5/10 , H01J37/08 , H01L21/02 , H01L21/265 , H01L21/336 , H01L21/425 , H01L21/66 , H01L29/78
CPC分类号： H01L22/20 , H01J2237/30455 , H01J2237/31701 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing an electronic device, which can obtain sufficient manufacturing margins and reduce a defect rate by compensating for a threshold voltage variation caused by the variation of a critical dimension (CD) of a gate electrode. An ion implanter controller and an ion implantation system perform the method. In the method, an ion implantation recipe for forming a junction contact plug of a transistor formed on the wafer is adjusted based on the measured CD. Then, ions are implanted into the wafer by using the adjusted ion implantation recipe. All defects that may occur in the transistor during previous manufacturing steps can be repaired after the transistor is formed, thus enhancing manufacturing margins
摘要翻译：一种制造电子器件的方法，其可以通过补偿由栅电极的临界尺寸（CD）的变化引起的阈值电压变化来获得足够的制造裕度并降低缺陷率。离子注入机控制器和离子注入系统执行该方法。在该方法中，基于所测量的CD调节用于形成晶片上形成的晶体管的接点插塞的离子注入配方。然后，通过使用调整的离子注入配方将离子注入晶片。在以前的制造步骤中可能发生在晶体管中的所有缺陷可以在晶体管形成之后被修复，从而提高制造裕度

10. 发明申请

US20050074313A1 Facility and method for manufacturing semiconductor device and stocker used in the facility 审中-公开
标题翻译：用于设备中使用的半导体器件和储存器的设备和方法
公开(公告)号：US20050074313A1
公开(公告)日：2005-04-07
申请号：US10956802
申请日：2004-10-01
申请人： Song-Won Kang , Sun-Yong Lee , Sung-Il Kim , Myung-Hwan Shin , Chi-Woon Jang
发明人： Song-Won Kang , Sun-Yong Lee , Sung-Il Kim , Myung-Hwan Shin , Chi-Woon Jang
IPC分类号： H01L21/68 , H01L21/673 , H01L21/677 , B65G67/00
CPC分类号： H01L21/67772 , H01L21/6735 , H01L21/67769
摘要： A facility for manufacturing a semiconductor device is provided. The facility includes a process room for performing a predetermined process on a wafer, and a stocker for keeping a FOUP receiving the wafers on which the process has been completely performed. The FOUP is filled with nitrogen gas and stored in the stocker. A sealing member is fixed on a pedestal in the stocker so as to close the hole penetrating the FOUP placed on the pedestal.
摘要翻译：提供一种用于制造半导体器件的设备。该设施包括用于在晶片上执行预定处理的处理室，以及用于保持FOUP接收已经完成了处理的晶片的储存器。 FOUP装满氮气并储存在储料器中。密封构件固定在储盘器的基座上，以便封闭穿过底座上的FOUP的孔。

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